Distinguished Technical Members
Yoshiro Hirayama was born in Kanagawa on July 18, 1955. He received the B.E., M.S. and Ph.D. degrees in electrical engineering from the University of Tokyo in 1978, 1980 and 1983, respectively. He joined NTT Basic Research Laboratories in 1983. He was a guest scientist in Max-Planck-Institut fur Festkorperforschung, Stuttgart, Germany during 1990-1991. Since 1983 he has engaged in the study of semiconductor fine structures fabricated by focused-ion-beam technique, transport characteristics of semiconductor mesoscopic systems and ballistic transport in high-mobility semiconductors. His current interests are transport properties of semiconductor layer and nano structures including carrier interaction phenomena. He is a research coordinator of NEDO international joint research project (NTDP-98) since 1998, and also a coordinator of CREST research team for interacting carrier electronics since 1999. He is an associate editor of Japanese Journal of Applied Physics, and a member of the Japan Society of Applied Physics, the Physical Society of Japan and IEEE.
Toshiki Makimoto was born in Tokyo on January 16, 1960. He received the B.E., M.S. and Ph.D. degrees in electrical engineering from the University of Tokyo in 1983, 1985 and 1993, respectively. He joined NTT Basic Research Laboratories in 1985. He was a visiting researcher in University of California, Santa Barbara, USA during 1993-1994. Since 1985, he has engaged in epitaxial growth of III-V compound semiconductors using metalorganic vapor phase epitaxy (MOVPE) and flow-rate modulation epitaxy (FME), in-situ monitoring of epitaxial growth using surface photo-absorption (SPA), characterization of heavily doped semiconductors, heterojunction bipolar transistors (HBTs), and nano-structure selective area growth using scanning tunnel microscopy (STM). His current interests are epitaxial growth of nitride semiconductors and nitride semiconductor devices. He is a member of the Japan Society of Applied Physics and Materials Research Society.
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