List of Invited Talks at International Conferences I. Device Physics

List of Invited Talks at International Conferences I. Device Physics

I. Device Physics

（１） Y. Takahashi, "Silicon single-electron devices and their circuit applications", The 1st Annual US-Korea-Japan Workshop on Nanostructure Science/Technology, Seoul, Korea (April, 2001).

（２） H. Kageshima, K. Shiraishi, and M. Uematsu, "Theory of Si oxide growth rate taking account of interfacial Si emission", Electrochemical Society International Semiconductor Technology Conference 2001, Shanghai, China (May, 2001).

（３） Y. Ono, K. Yamazaki, and Y. Takahashi, "Arithmetic operation by single-electron transistors", 2001 Silicon Nanoelectronics Workshop, Kyoto, Japan (June, 2001).

（４） M. Nagase, S. Horiguchi, A. Fujiwara, Y. Ono, K. Yamazaki, H. Namatsu, and Y. Takahashi, "Single-electron devices formed by pattern-dependent oxidation", 8th International Conference on Formation of Semiconductor Interface, Sapporo, Japan (June, 2001).

（５） H. Kageshima, M. Uematsu and K. Shiraishi, "Theory of Si thermal oxide growth rate taking into account interfacial Si emission effects", Bianual International Conference of Insulating Films on Semiconductors, 2001, Udine, Italy (June, 2001).

（６） Y. Ono, Y. Takahashi, and H. Namatsu, "Single-electron and quantum SOI devices", Bianual International Conference of Insulating Films on Semiconductors, 2001, Udine, Italy (June, 2001).

（７） Y. Homma and P. Finnie, "Step dynamics on growing silicon surfaces observed by ultrahigh vacuum scanning electron microscopy", The 13th International Conference on Crystal Growth in Conjunction with The 11th International Conference on Vapor Growth and Epitaxy, Kyoto, Japan (July, 2001).

（８） H. Kageshima, M. Uematsu, and K. Shiraishi, "Theory of Si oxide growth rate including interfacial Si emission effects", 2nd Korea-Japan Workshop on Frontier Nanostructure, Seoguipo, Korea (August, 2001).

（９） M. Nagase, S. Horiguchi, K. Shiraishi, A. Fujiwara, and Y. Takahashi, "Single-electron devices formed by thermal oxidation", International Symposium on Materials Processing for Nanostructured Device, Kyoto, Japan (September, 2001).

（10） H. Inokawa, A. Fujiwara, and Y. Takahashi, "A multiple-valued single-electron SRAM by PADOX process", 2001 6th International Conference on Solid-state and Integrated Circuit Technology, Beijing, China (October, 2001).

（11） A. Fujiwara, K. Yamazaki, and Y. Takahashi, "Si single-electron CCD", International Microprocesses and Nanotechnology Conference 2001, Matsue, Japan (October, 2001).

（12） T. Ogino, Y. Homma, Y. Kobayashi, H. Hibino, K. Prabhakaran, K. Sumitomo, H. Omi, D. Bottomley, F. Lin, Z. H. Zhang, and A. Kaneko, "Atomic structure control on Si surfaces and its application to nanofabrication", International Workshop on Atomic-Scale Surface Dynamics of Advanced Materials, Izunagaoka, Japan (November, 2001).

（13） Y. Homma, A. Takano, and Y. Higashi, "Formation mechanism of oxygen-ion-induced ripple topography", 13th International Conference on Secondary Ion Mass Spectrometry and Related Topics, Nara, Japan (November, 2001).

（14） Y. Takahashi, Y. Ono, A. Fujiwara, and H. Inokawa, "Silicon single-electron devices", 7th International Symposium on Advanced Physical Fields, Tsukuba, Japan (November, 2001).

（15） Y. Homma, P. Finnie, A. Kaneko, and T. Ogino, "Ultrahigh vacuum scanning electron microscopy - towards the engineering of atomic steps-", 3rd International Symposium on Atomic Level Characterization for New Materials and Devices, Nara, Japan (Novemver, 2001).

（16） T. Ogino, Y. Homma, Y. Kobayashi, H. Hibino, K. Prabhakaran, K. Sumitomo, H. Omi, S. Suzuki, T. Yamashita, D. Bottomley, F. Lin, and A. Kaneko, "Design and functionalization of Si surfaces for self-assembled nano-architechture", Yamada Conference LVII, Atomic-Scale Surface Designing for Functional Low-Dimensional Materials, Tsukuba, Japan (November, 2001).

（17） H. Namatsu, "Nanoline formation by using small aggregate resist and supercritical resist drying", 2001 Fall Meeting of Materials Research Society, Boston, USA (November, 2001).

（18） Y. Takahashi, A. Fujiwara, Y. Ono, H. Inokawa, and K. Yamazaki, "Silicon single-electron transistor and single-electron CCD", 2001 Fall Meeting of Materials Research Society, Boston, USA (November, 2001).

（19） S. Heun, L. Gregoratti, A. Barinov, B. Kaulich, M. Kiskinova, S. Suzuki, Y. Watanabe, T. Ogino, W. Zhu, C. Bower, and O. Zhou, "Electronic structure of aligned carbon nanotubes studied by photoemission microscopy", IX ELETTRA Users Meeting, Trieste, Italy (December, 2001).

（20） K. Prabhakaran, "Multifunctionalisation of silicon through nanoparticles: plug and play approach", International Symposium on Solid State and Material Chemistry, Indian Institute of Science (December, 2001).

（21） H. Omi, D. Bottomley, Y. Homma, T. Ogino, and S. Stoyanov, V. Tonchev, "Shape of atomic steps on Si(111) under localized stress", IV East West Surface Science Workshop, Pamporovo, Blugaria (February, 2002).

（22） T. Ogino, Y. Homma, Y. Kobayashi, H. Hibino, K. Prabhakaran, K. Sumitomo, H. Omi, A. Kaneko, and F. Ling, "Atomic-structure and strain engineering for control of self-organized Ge quantum nanostructures on Si surfaces", Dr. Rohrer's JSPS Award Workshop (International Workshop at IMR Tohoku University), Sendai, Japan (March, 2002).

（23） T. Ogino, "Control of single electron, control of single atom", International Nanotechnology Exhibition & Conference, Makuhari, Japan (March, 2002).

（24） T. Ogino, Y. Homma, Y. Kobayashi, H. Hibino, K. Prabhakaran, K. Sumitomo, H. Omi, S. Suzuki, T. Yamashita, F. Lin, and A. Kaneko, "Bottom-up approach for future Si integration technology", Flip Chip & Chip Scale Europa 2002, Bueblingen, Germany (March, 2002).

（25） T. Ogino, Y. Homma, Y. Kobayashi, H. Hibino, K. Prabhakaran, K. Sumitomo, H. Omi, S. Suzuki, T. Yamashita, F. Lin, and A. Kaneko, "Integration of semiconductor nanostructures and interconnections for future self-assembled nano-architechture", Nanoarchitectonics Using Suprainteractions, Los Angels, USA (March, 2002).

【Back】

（１）	Y. Takahashi, "Silicon single-electron devices and their circuit applications", The 1st Annual US-Korea-Japan Workshop on Nanostructure Science/Technology, Seoul, Korea (April, 2001).
（２）	H. Kageshima, K. Shiraishi, and M. Uematsu, "Theory of Si oxide growth rate taking account of interfacial Si emission", Electrochemical Society International Semiconductor Technology Conference 2001, Shanghai, China (May, 2001).
（３）	Y. Ono, K. Yamazaki, and Y. Takahashi, "Arithmetic operation by single-electron transistors", 2001 Silicon Nanoelectronics Workshop, Kyoto, Japan (June, 2001).
（４）	M. Nagase, S. Horiguchi, A. Fujiwara, Y. Ono, K. Yamazaki, H. Namatsu, and Y. Takahashi, "Single-electron devices formed by pattern-dependent oxidation", 8th International Conference on Formation of Semiconductor Interface, Sapporo, Japan (June, 2001).
（５）	H. Kageshima, M. Uematsu and K. Shiraishi, "Theory of Si thermal oxide growth rate taking into account interfacial Si emission effects", Bianual International Conference of Insulating Films on Semiconductors, 2001, Udine, Italy (June, 2001).
（６）	Y. Ono, Y. Takahashi, and H. Namatsu, "Single-electron and quantum SOI devices", Bianual International Conference of Insulating Films on Semiconductors, 2001, Udine, Italy (June, 2001).
（７）	Y. Homma and P. Finnie, "Step dynamics on growing silicon surfaces observed by ultrahigh vacuum scanning electron microscopy", The 13th International Conference on Crystal Growth in Conjunction with The 11th International Conference on Vapor Growth and Epitaxy, Kyoto, Japan (July, 2001).
（８）	H. Kageshima, M. Uematsu, and K. Shiraishi, "Theory of Si oxide growth rate including interfacial Si emission effects", 2nd Korea-Japan Workshop on Frontier Nanostructure, Seoguipo, Korea (August, 2001).
（９）	M. Nagase, S. Horiguchi, K. Shiraishi, A. Fujiwara, and Y. Takahashi, "Single-electron devices formed by thermal oxidation", International Symposium on Materials Processing for Nanostructured Device, Kyoto, Japan (September, 2001).
（10）	H. Inokawa, A. Fujiwara, and Y. Takahashi, "A multiple-valued single-electron SRAM by PADOX process", 2001 6th International Conference on Solid-state and Integrated Circuit Technology, Beijing, China (October, 2001).
（11）	A. Fujiwara, K. Yamazaki, and Y. Takahashi, "Si single-electron CCD", International Microprocesses and Nanotechnology Conference 2001, Matsue, Japan (October, 2001).
（12）	T. Ogino, Y. Homma, Y. Kobayashi, H. Hibino, K. Prabhakaran, K. Sumitomo, H. Omi, D. Bottomley, F. Lin, Z. H. Zhang, and A. Kaneko, "Atomic structure control on Si surfaces and its application to nanofabrication", International Workshop on Atomic-Scale Surface Dynamics of Advanced Materials, Izunagaoka, Japan (November, 2001).
（13）	Y. Homma, A. Takano, and Y. Higashi, "Formation mechanism of oxygen-ion-induced ripple topography", 13th International Conference on Secondary Ion Mass Spectrometry and Related Topics, Nara, Japan (November, 2001).
（14）	Y. Takahashi, Y. Ono, A. Fujiwara, and H. Inokawa, "Silicon single-electron devices", 7th International Symposium on Advanced Physical Fields, Tsukuba, Japan (November, 2001).
（15）	Y. Homma, P. Finnie, A. Kaneko, and T. Ogino, "Ultrahigh vacuum scanning electron microscopy - towards the engineering of atomic steps-", 3rd International Symposium on Atomic Level Characterization for New Materials and Devices, Nara, Japan (Novemver, 2001).
（16）	T. Ogino, Y. Homma, Y. Kobayashi, H. Hibino, K. Prabhakaran, K. Sumitomo, H. Omi, S. Suzuki, T. Yamashita, D. Bottomley, F. Lin, and A. Kaneko, "Design and functionalization of Si surfaces for self-assembled nano-architechture", Yamada Conference LVII, Atomic-Scale Surface Designing for Functional Low-Dimensional Materials, Tsukuba, Japan (November, 2001).
（17）	H. Namatsu, "Nanoline formation by using small aggregate resist and supercritical resist drying", 2001 Fall Meeting of Materials Research Society, Boston, USA (November, 2001).
（18）	Y. Takahashi, A. Fujiwara, Y. Ono, H. Inokawa, and K. Yamazaki, "Silicon single-electron transistor and single-electron CCD", 2001 Fall Meeting of Materials Research Society, Boston, USA (November, 2001).
（19）	S. Heun, L. Gregoratti, A. Barinov, B. Kaulich, M. Kiskinova, S. Suzuki, Y. Watanabe, T. Ogino, W. Zhu, C. Bower, and O. Zhou, "Electronic structure of aligned carbon nanotubes studied by photoemission microscopy", IX ELETTRA Users Meeting, Trieste, Italy (December, 2001).
（20）	K. Prabhakaran, "Multifunctionalisation of silicon through nanoparticles: plug and play approach", International Symposium on Solid State and Material Chemistry, Indian Institute of Science (December, 2001).
（21）	H. Omi, D. Bottomley, Y. Homma, T. Ogino, and S. Stoyanov, V. Tonchev, "Shape of atomic steps on Si(111) under localized stress", IV East West Surface Science Workshop, Pamporovo, Blugaria (February, 2002).
（22）	T. Ogino, Y. Homma, Y. Kobayashi, H. Hibino, K. Prabhakaran, K. Sumitomo, H. Omi, A. Kaneko, and F. Ling, "Atomic-structure and strain engineering for control of self-organized Ge quantum nanostructures on Si surfaces", Dr. Rohrer's JSPS Award Workshop (International Workshop at IMR Tohoku University), Sendai, Japan (March, 2002).
（23）	T. Ogino, "Control of single electron, control of single atom", International Nanotechnology Exhibition & Conference, Makuhari, Japan (March, 2002).
（24）	T. Ogino, Y. Homma, Y. Kobayashi, H. Hibino, K. Prabhakaran, K. Sumitomo, H. Omi, S. Suzuki, T. Yamashita, F. Lin, and A. Kaneko, "Bottom-up approach for future Si integration technology", Flip Chip & Chip Scale Europa 2002, Bueblingen, Germany (March, 2002).
（25）	T. Ogino, Y. Homma, Y. Kobayashi, H. Hibino, K. Prabhakaran, K. Sumitomo, H. Omi, S. Suzuki, T. Yamashita, F. Lin, and A. Kaneko, "Integration of semiconductor nanostructures and interconnections for future self-assembled nano-architechture", Nanoarchitectonics Using Suprainteractions, Los Angels, USA (March, 2002).