List of Invited Talks at International Conferences III. Quantum Electron Physics

III. Quantum Electron Physics

(1) N. Kobayashi, "Growth of GaN-based materials and their device applications", 2001 The Sino-Japanese Modern Engineering and Technology Symposium, Hsinchu, Taiwan (May, 2001) .
(2) Y. Hirayama, "Spin related phenomena in semiconductor layer and dot structures", CIAR (The Canadian Institute for Advanced Research) Nanoelectronics Program Meeting, Victoria, Canada (June, 2001).
(3) S. Tarucha, K. Ono, D. G. Austing, S. Sasaki, T. Fujisawa, Y. Tokura, and L. P. Kouwwenhoven, "Tunable two-electron spin states in quantum dot structures and applicability for making spin qubits", The 59th Annual Device Research Conference (DRC), Notre Dame, USA (June, 2001).
(4) K. Kanisawa, M. J. Butcher, Y. Tokura, H. Yamaguchi, and Y. Hirayama, "Imaging of wave phenomena at InAs(111)A surfaces using scanning tunneling microscopy", First International Workshop on Quantum Nonplanar Nanostructures & Nanoelectronics '01 (QNN '01), Tsukuba, Japan (July, 2001).
(5) K. Shiraishi, N. Oyama, K. Okajima, N. Miyagishima, H. Yamaguchi, K. Takeda, T. Ito, and T. Ohno, "First principle and macroscopic studies on semiconductor epitaxial growth", 13th International Conference on Crystal Growth (ICCG13), Kyoto, Japan (July, 2001).
(6) D. G. Austing and S. Tarucha, "Addition energy spectra of practical artificial atom and artificial molecule vertical quantum dot structures", The Nano-Physics & Bio-Electronics Workshop, Dresden, Germany (August, 2001).
(7) T. Fujisawa, Y. Tokura, D. G. Austing, Y. Hirayama, and S. Tarucha, "Long-lived spin state and spin blockade in a vertical quantum dot", The 12th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-12), Santa Fe, USA (August-September, 2001).
(8) K. Kanisawa, M. J. Butcher, Y. Tokura, H. Yamaguchi, and Y. Hirayama, "Two-dimensional Friedel oscillations and electron confinement to nanostructures at a semiconductor surface", 2001 International Conference on Solid State Devices and Materials (SSDM2001), Tokyo, Japan (September, 2001).
(9) H. Yamaguchi, R. Dreyfus, S. Miyashita, and Y. Hirayama, "Application of InAs free-standing membranes for electromechanical systems", 2001 International Conference on Solid State Devices and Materials (SSDM2001), Tokyo, Japan (September, 2001).
(10) T. Matsuoka, "Substrates for epitaxial growth of InGaAlN system and growth on their substrates", Frontier Science Research Conference in Materials Science and Technology Series ; Science and Technology of NITRIDE MATERIALS-2001, La Jolla, USA (November, 2001).
(11) T. Nishida and N. Kobayashi, "Highly efficient AlGaN-based UV-LED and its application to visible light source", SPIE Optoelectronics 2002, San Jose, USA (January, 2002).
(12) T. Fujisawa, "Time-dependent phenomena of charge state and spin state in quantum dots", International Workshop on Quantum Dots for Quantum Computing and Classical Size Effect Circuits (IWQDQC), Kochi, Japan (January, 2002).
(13) Y. Hirayama, K. Hashimoto, K. Muraki, and T. Saku, "Possible control of nuclear spin polarization by two-dimensional electron gas", 2002 RCIQE International Seminar on Quantum Nanostructure and Their Device Applications, Sapporo, Japan (February, 2002).
(14) T. Matsuoka, "Miscibility gap in wurtzite In1-X-YGaXAlYN", Compound Semiconductor Optoelectronic Materials and Device Workshop, Hsinchu, Taiwan (March, 2002).
(15) N. Kobayashi, T. Nishida, T. Akasaka, S. Ando, and H. Saito, "AlGaN UV-LEDs with High Efficiency and InGaN LDs Using Grown Facet Mirrors", 4th International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED-2002), Cordoba, Spain (March, 2002) .
(16) T. Fujisawa, "Time-dependent phenomena of a quantum dot in the Coulomb blockade regime", The 10th JST International Symposium on Quantum Computing, Tokyo, Japan (March, 2002).
(17) T. Nishida and N. Kobayashi, "Fabrication of AlGaN-based ultraviolet light emitting diodes", International Symposium on Light of 21st Century, Tokyo, Japan (March, 2002).