List of Invited Talks at International Conferences (Fiscal 2003) I. Device Physics

List of Invited Talks at International Conferences (Fiscal 2003)

I. Device Physics

(1) Y. Takahashi, Y. Ono, S. Fujiwara, and H. Inokawa, “Development of silicon single-electron devices”, The 4th International Symposium on Nanostructures and Mesoscopic Systems (NanoMES2003), Tempe, USA (Feb. 2003).

(2) Y. Homma, “In situ observations using ultrahigh vacuum scanning electron microscopy”, Microscopy and Microanalysis, San Antonio, USA (Aug. 2003).

(3) Y. Homma, “Self-assembled nanotube networks for nano-device applications”, 4th International Symposium on Atomic Level Characterizations for New Materials and Devices (ALC’03), Hawaii, USA (Oct 2003).

(4) S. Suzuki, Y. Watanabe, Y. Homma, T. Ogino, S. Heun, L. Gregoratti, A. Brinov, B. Kaulich, and M. Kiakinova, “Photoemission spectromicroscopy and spectroscopy of carbon nanotubes”, AVS international Symposium, Baltimore, USA (Nov 2003).

(5) Y. Takahashi, S. Fujiwara, and S. Horiguchi, “Silicon nano-wire and quantized conductance”, International workshop on smart interconnects, Atami, Japan (Nov. 2003).

(6) H. Hibino, Y. Homma, C.-W. Hu, M. Uwaha, T. Ogino, and I. S. T. Tsong, “Structural and morphological changes on surface with multiple phases studied by low-energy electron microscopy”, 7th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-7), Nara, Japan (Nov. 2003).

(7) Y. Takahashi, Y. Ono, S. Fujiwara, K. Nishiguchi, and H. Inokawa, “Silicon single-electron devices operating with MOSFETs”, Sixth International Conference on New Phenomena, Maui, USA. (Dec. 2003).

(8) Y. Watanabe, S. Suzuki, Y. Homma, and T. Ogino, “Spectromicroscopy of carbon nanotubes”, 2nd Int. Conf. on Materials for Advanced Technology, Singapore (Dec. 2003).

(9) Y. Takahashi, Y. Ono, S. Fujiwara, K. Nishiguchi, and H. Inokawa, “Silicon nano-devices and single-electron devices”, 2003 International Semiconductor Device Research Symposium (ISDRS2003), Washington D.C., USA (Dec. 2003).

(10) Y. Homma, “Suspended carbon nanotube architectures: growth control and optical properties”, 12th International Conference on Advanced Materials and Devices 2003, Jeju island, Korea (Dec. 2003).

(11) Y. Watanabe, B. Satyaban, T. Kawamura, S. Fujikawa, and N. Yamamoto, “Growth and Characterization of Vertically Aligned InP Nanowires on Semiconductor Substrates”, 12th Int. Workshop the Physics of Semicond. Dev., Chennai, India (Dec. 2003).

(12) Y. Watanabe, “InP nanowire growth on semiconducting materials by metal organic vapor phase epitaxy”, Int. Conference on Nano Science and Technology, Kalkata, India (Dec. 2003).

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(1)	Y. Takahashi, Y. Ono, S. Fujiwara, and H. Inokawa, “Development of silicon single-electron devices”, The 4th International Symposium on Nanostructures and Mesoscopic Systems (NanoMES2003), Tempe, USA (Feb. 2003).
(2)	Y. Homma, “In situ observations using ultrahigh vacuum scanning electron microscopy”, Microscopy and Microanalysis, San Antonio, USA (Aug. 2003).
(3)	Y. Homma, “Self-assembled nanotube networks for nano-device applications”, 4th International Symposium on Atomic Level Characterizations for New Materials and Devices (ALC’03), Hawaii, USA (Oct 2003).
(4)	S. Suzuki, Y. Watanabe, Y. Homma, T. Ogino, S. Heun, L. Gregoratti, A. Brinov, B. Kaulich, and M. Kiakinova, “Photoemission spectromicroscopy and spectroscopy of carbon nanotubes”, AVS international Symposium, Baltimore, USA (Nov 2003).
(5)	Y. Takahashi, S. Fujiwara, and S. Horiguchi, “Silicon nano-wire and quantized conductance”, International workshop on smart interconnects, Atami, Japan (Nov. 2003).
(6)	H. Hibino, Y. Homma, C.-W. Hu, M. Uwaha, T. Ogino, and I. S. T. Tsong, “Structural and morphological changes on surface with multiple phases studied by low-energy electron microscopy”, 7th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-7), Nara, Japan (Nov. 2003).
(7)	Y. Takahashi, Y. Ono, S. Fujiwara, K. Nishiguchi, and H. Inokawa, “Silicon single-electron devices operating with MOSFETs”, Sixth International Conference on New Phenomena, Maui, USA. (Dec. 2003).
(8)	Y. Watanabe, S. Suzuki, Y. Homma, and T. Ogino, “Spectromicroscopy of carbon nanotubes”, 2nd Int. Conf. on Materials for Advanced Technology, Singapore (Dec. 2003).
(9)	Y. Takahashi, Y. Ono, S. Fujiwara, K. Nishiguchi, and H. Inokawa, “Silicon nano-devices and single-electron devices”, 2003 International Semiconductor Device Research Symposium (ISDRS2003), Washington D.C., USA (Dec. 2003).
(10)	Y. Homma, “Suspended carbon nanotube architectures: growth control and optical properties”, 12th International Conference on Advanced Materials and Devices 2003, Jeju island, Korea (Dec. 2003).
(11)	Y. Watanabe, B. Satyaban, T. Kawamura, S. Fujikawa, and N. Yamamoto, “Growth and Characterization of Vertically Aligned InP Nanowires on Semiconductor Substrates”, 12th Int. Workshop the Physics of Semicond. Dev., Chennai, India (Dec. 2003).
(12)	Y. Watanabe, “InP nanowire growth on semiconducting materials by metal organic vapor phase epitaxy”, Int. Conference on Nano Science and Technology, Kalkata, India (Dec. 2003).