GaN-Based Vertical Cavity Surface Emitting Lasers

A serious problem with GaN-based vertical cavity surface emitting lasers (VCSEL) is that the crystal quality of the cavity layer is degraded by the large lattice mismatch between the GaN-based mirror layers. A high quality GaN-based VCSEL was fabricated and its lasing action at room temperature demonstrated by using a wafer bonding technique with a GaN-based cavity layer and oxide-based mirrors that were prepared separately.