InGaN-based horizontal cavity surface emitting laser diode

An SEM birdfs-eye-view photograph of an InGaN-based horizontal cavity surface emitting laser diode (HCSELD). A Fabry-Perot cavity mirror and an outer micromirror are a vertical {11-20} microfacet and an inclined {11-22} microfacet of the regrown Mg-doped GaN layers, respectively. The {11-20} Fabry-Perot cavity mirror of the HCSELD is vertical to a SiC substrate. The angle between the inclined {11-22} outer micromirror and the SiC substrate surface is 58 degrees. Therefore, geometrically, laser beams are emitted at an angle of 64 degrees to the substrate surface. The InGaN-based HCSELDs lase at room temperature by current injection. (page 18)


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