List of Research Papers Published in International Journals

List of Research Papers Published in International Journals

Material Science Laboratory

Thin-Film Materials Research Group

1.
T. Akasaka and T. Makimoto, "BGaN micro-islands as novel buffers for GaN hetero-epitaxy", Jpn. J. Appl. Phys. Part 2 - Lett. Express Lett. 44 (50-52), L1506-L1508 (2005).

2. T. Akasaka, H. Gotoh, H. Nakano, and T. Makimoto, "Blue-purplish InGaN quantum wells with shallow depth of exciton localization", Appl. Phys. Lett. 86 (19), 191902 (2005).

3. M. Kasu, K. Ueda, H. Ye, Y. Yamauchi, S. Sasaki, and T. Makimoto, "2W/mm output power density at 1 GHz for diamond FETs", Electron. Lett. 41 (22), 1249-1250 (2005).

4.
K. Kumakura and T. Makimoto, "High-voltage operation with high current gain of pnp AlGaN/GaN heterojunction bipolar transistors with thin n-type GaN base", Appl. Phys. Lett. 86 (2), 023506 (2005).

5. K. Kumakura, T. Makimoto, N. Kobayashi, T. Hashizume, T. Fukui, and H. Hasegawa, "Minority carrier diffusion length in GaN- Dislocation density and dopoing concentration dependence", Appl. Phys. Lett. 86 (5), 052105 (2005).

6. K. Kumakura, Y. Yamauchi, and T. Makimoto, "High power operation of Pnp AlGaN/GaN heterojunction bipolar transistors", Phys. Stat. Sol. (c), 2 (7), 2589-2592 (2005).

7. J. Kurian, H. Sato, T. Makimoto, and M. Naito, "Silver-assisted growth of NdBa₂Cu₃O₇-delta thin films: An approach for the growth of superior quality ceramic oxide films", Appl. Phys. Lett. 87 (2), 022501 (2005).

8. J. Kurian and M. Naito, "MBE growth of large area RE-123 superconductor thin films for microwave applications", IEEE Trans. Appl. Supercond. 15 (2), 2966-2969 (2005).

9. H. S. Lee, H. J. Kim, H. J. Kim, M. H. Jung, Y. Jo, S. I. Lee, A. Tsukada, and M. Naito, "Three-dimensional superconductivity of the structurally two-dimensional superconductor La_1.87Y_0.13CuO₄: study of an angle-dependent critical current density", Supercond. Sci. Technol. 18 (7), 944-947 (2005).

10. N. Maeda, T. Makimura, T. Maruyama, C. X. Wang, M. Hiroki, H. Yokoyama, T. Makimoto, T. Kobayashi, and T. Enoki, "DC and RF characteristics in Al₂O₃/Si₃N₄ insulated-gate AlGaN/GaN heterostructure field-effect transistors", Jpn. J. Appl. Phys. Part 2 - Lett. Express Lett. 44 (20-23), L646-L648 (2005).

11. N. Maeda, T. Makimura, C. X. Wang, M. Hiroki, T. Makimoto, T. Kobayashi, and T. Enoki, "Al₂O₃/Si₃N₄ Insulated Gate Channel-doped AlGaN/GaN Heterostructure Field-Effect Transistors with Regrown Ohmic Structure: Low Gate Leakage Current with High Transconductance", Jpn. J. Appl. Phys. Part 1 ― Regul. Pap. Short Notes Rev. Pap. 44 (4B), 2747-2750 (2005).

12. N. Maeda, C. X. Wang, T. Enoki, T. Makimoto, and T. Tawara, "High drain current density and reduced gate leakage current in channel-doped AlGaN/GaN heterostructure field-effect transistors with Al₂O₃/Si₃N₄ gate insulator", Appl. Phys. Lett., 87 (7), 073504 (2005).

13. T. Makimoto, Y. Yamauchi, T. Kido, K. Kumakura, Y. Taniyasu, M. Kasu, and N. Matsumoto, "Strained Thick p-InGaN Layers for GaN/InGaN Heterojunction Bipolar Transistors on Sapphire Substrates", Jpn. J. Appl. Phys. Part 1 ― Regul. Pap. Short Notes Rev. Pap. 44 (4B), 2722-2725 (2005).

14. T. Matsuoka, "Progress in nitride semiconductors from GaN to InN - MOVPE growth and characteristics", Superlattices Microstruct. 37 (1), 19-32 (2005).

15. T. Mitate, S. Mizuno, H. Takahata, R. Kakegawa, T. Matsuoka, and N. Kuwano, "InN polarity determination by convergent-beam electron diffraction", Appl. Phys. Lett. 86 (13), 134103 (2005).

16. A. Nishikawa, K. Kumakura, T. Akasaka, and T. Makimoto, "Current-voltage characteristics of p-InGaN/n-GaN vertical conducting diodes on n⁺-SiC substrates", Appl. Phys. Lett. 87 (23), 233505 (2005).

17. M. Noda, A. Tsukada, H. Yamamoto, and M. Naito, "Origin of superconducting carriers in "non-doped" T'-(La,RE)(2)CuO₄ (RE = Sm, Eu, Gd, Tb, Lu, and Y) prepared by molecular beam epitaxy", Physica C 426, 220-224 (2005).

18. H. Oyanagi, N. L. Saini, A. Tsukada, and M. Naito, "Lattice anomalies in (La,Sr)(2)CuO₄ under epitaxial strain probed by polarized X-ray absorption spectroscopy", J. Supercond. 18 (5-6), 731-735 (2005).

19. H. Sato and J. Kurian, "Superconducting bandpass filters on thin films of NdBa₂Cu₃O₇", Physica C 426, 1616-1621 (2005).

20. A. Tsukada, H. Yamamoto, and M. Naito, "Ce doping in T-La₂CuO₄ films: Broken electron-hole symmetry for high-T-c superconductivity", Physica C 426, 454-458 (2005).

21. A. Tsukada, M. Noda, H. Yamamoto, and M. Naito, "Role of impurity oxygen in superconductivity of "non-doped" T '-(La, RE)(2)CuO₄", Physica C 426, 459-463 (2005).

22. A. Tsukada, Y. Krockenberger, M. Noda, H. Yamarnoto, D. Manske, L. Alff, and M. Naito, "New class of T '-structure cuprate superconductors", Solid State Commun. 133 (7), 427-431 (2005).

23. K. Ueda, S. Saito, K. Semba, T. Makimoto, and M. Naito, "All-MgB₂ Josephson tunnel junctions", Appl. Phys. Lett. 86 (17), 172502 (2005).

24. C. X. Wang, N. Maeda, M. Hiroki, T. Tawara, T. Makimoto, T. Kobayashi, and T. Enoki, "Comparison of AlGaN/GaN insulated gate heterostructure field-effect transistors with ultrathin Al₂O₃/Si₃N₄ bilayer and Si₃N₄ single layer", Jpn. J. Appl. Phys. Part 1 - Regul. Pap. Short Notes Rev. Pap. 44 (4B), 2735-2738 (2005).

25. H. T. Ye, H. X. Yan, and R. B. Jackman, "Dielectric properties of single crystal diamond", Semicond. Sci. Technol. 20 (3), 296-298 (2005).

Low-Dimensional Nanomaterials Research Group

1.
P. Finnie, Y. Homma, and J. Lefebvre, "Band-gap shift transition in the photoluminescence of single-walled carbon nanotubes", Phys. Rev. Lett. 94 (24), 247401 (2005).

2. S. Fujikawa, T. Kawamura, S. Bhunia, Y. Watanabe, K. Tokushima, Y. Tsusaka, Y. Kagoshima, and J. I. Matsui, "Real-time observation of fractional-order x-ray reflection profiles of InP(001) during step-flow growth", Jpn. J. Appl. Phys. Part 2 - Lett. Express Lett. 44 (1-7), L144-L146 (2005).

3. H. Hibino, Y. Watanabe, C. W. Hu, and I. S. T. Tsong, "Thermal decay of superheated 7 x 7 islands and supercooled "1 x 1" vacancy islands on Si(111) ", Phys. Rev. B 72 (24), 245424 (2005).

4.
H. Hibino and Y. Watanabe, "Arrangement of Au-Si alloy islands at atomic steps", Surf. Sci. 588 (1-3), L233-L238 (2005).

5. H. Hibino and Y. Watanabe, "Growth of twinned epitaxial layers on Si(111)root 3x root 3-B studied by low-energy electron microscopy", Jpn. J. Appl. Phys. Part 1 - Regul. Pap. Short Notes Rev. Pap. 44 (1A), 358-364 (2005).

6. Y. Homma, D. Takagi, S. Suzuki, K. Kanzaki, and Y. Kobayashi, "Electron-microscopic imaging of single-walled carbon nanotubes grown on silicon and silicon oxide substrates", J. Electron Microsc. 54, I3-I7 (2005).

7. Y. Homma, "Summary of ISO/TC 201 standard: X ISO 17560: 2002 - Surface chemical analysis - Secondary ion mass spectrometry - Method for depth profiling of boron in silicon", Surf. Interface Anal. 37 (1), 90-91 (2005).

8. G. H. Jeong, S. Suzuki, Y. Kobayashi, A. Yamazaki, H. Yoshimura, and Y. Homma, "Effect of nanoparticle density on narrow diameter distribution of carbon nanotubes and particle evolution during chemical vapor deposition growth", J. Appl. Phys. 98 (12), 124311 (2005).

9. G. H. Jeong, A. Yamazaki, S. Suzuki, H. Yoshimura, Y. Kobayashi, and Y. Homma, "Cobalt-filled apoferritin for suspended single-walled carbon nanotube growth with narrow diameter distribution", J. Am. Chem. Soc. 127 (23), 8238-8239 (2005).

10. A. Kaneko, Y. Homma, H. Hibino, and T. Ogino, "Ultrahigh vacuum scanning electron microscope system combined with wide-movable scanning tunneling microscope", Rev. Sci. Instrum. 76 (8), 083709 (2005).

11. T. Kawamura, S. Bhunia, Y. Watanabe, S. Fujikawa, J. Matsui, Y. Kagoshima, and Y. Tsusaka, "High-resolution x-ray diffraction analysis of epitaxially grown indium phosphide nanowires", J. Appl. Phys. 97 (8), 084318 (2005).

12. T. Matsumoto, Y. Homma, and Y. Kobayashi, "Bridging growth of single-walled carbon nanotubes on nanostructures by low-pressure hot-filament chemical vapor deposition", Jpn. J. Appl. Phys. Part 1 - Regul. Pap. Brief Commun. Rev. Pap. 44 (10), 7709-7712 (2005).

13. H. Omi and Y. Homma, "Self-ordering on vicinal Si (111) during molecular beam epitaxy", Phys. Rev. B 72 (19), 195322 (2005).

14. H. Omi, Y. Homma, V. Tonchev, and A. Pimpinelli, "New types of unstable step-flow growth on Si(111)-(7 x 7) during molecular beam epitaxy: Scaling and universality", Phys. Rev. Lett. 95 (21), 216101 (2005).

15. H. Omi, T. Kawamura, S. Fujikawa, Y. Tsusaka, Y. Kagoshima, and J. Matsui, "In-plane strain distribution in the surface region of thin silicon overlayers on insulator", Appl. Phys. Lett. 86 (26), 263112 (2005).

16. V. Peano, M. Thorwart, A. Kasper, and R. Egger, "Nanoscale atomic waveguides with suspended carbon nanotubes", Appl. Phys. B-Lasers Opt. 81 (8), 1075-1080 (2005).

17. S. Suzuki and Y. Kobayashi, "Conductivity decrease in carbon nanotubes caused by low-acceleration-voltage electron irradiation", Jpn. J. Appl. Phys. Part 2 - Lett. Express Lett. 44 (46-49), L1498-L1501 (2005).

18. S. Suzuki, Y. Watanabe, Y. Homma, S. Y. Fukuba, A. Locatelli, and S. Heun, "Photoemission electron microscopy of individual single-walled carbon nanotubes", J. Electron Spectrosc. Relat. Phenom. 144, 357-360 (2005).

19. S. Suzuki, H. Yamamoto, F. Maeda, Y. Watanabe, K. Yamada, and T. Kiyokura, "Beamline for angle-resolved photoemission spectroscopy at low-temperature constructed at NTT Atsugi R&D Center", J. Electron Spectrosc. Relat. Phenom. 144, 1109-1112 (2005).

20. S. Suzuki, D. Takagi, Y. Homma, and Y. Kobayashi, "Selective removal of carbon nanotubes utilizing low-acceleration-voltage electron irradiation damage", Jpn. J. Appl. Phys. Part 2 - Lett. Express Lett. 44 (1-7), L133-L135 (2005).

21. D. Takagi, Y. Homma, S. Suzuki, and Y. Kobayashi, "Vertical growth of individual single-walled carbon nanotubes on silicon and SiO2 substrates", Jpn. J. Appl. Phys. Part 1 - Regul. Pap. Short Notes Rev. Pap. 44 (4A), 1564-1568 (2005).

22. A. Vijayaraghavan, K. Kanzaki, S. Suzuki, Y. Kobayashi, H. Inokawa, Y. Ono, S. Kar, and P. M. Ajayan, "Metal-semiconductor transition in single-walled carbon nanotubes induced by low-energy electron irradiation", Nano Lett. 5 (8), 1575-1579 (2005).

23. T. Yamazaki, S. Ohmi, S. Morita, H. Ohri, J. Murota, M. Sakuraba, H. Omi, and T. Sakai, "Separation by bonding Si islands (SBSI) for advanced CMOS LSI applications", IEICE Trans. Electron. E88C (4), 656-661 (2005).

24. T. Yamazaki, S. Ohmi, S. Morita, H. Ohri, J. Murota, M. Sakuraba, H. Omi, Y. Takahashi, and T. Sakai, "Separation by bonding Si islands (SBST) for LSI applications", Mater. Sci. Semicond. Process 8 (1-3), 59-63 (2005).

Molecular and Bio Science Research Group

1.
I. Bosanac, H. Yamazaki, T. Matsu-ura, T. Michikawa, K. Mikoshiba, and M. Ikura, "Crystal structure of the ligand binding suppressor domain of type 1 inositol 1,4,5-trisphosphate receptor", Mol. Cell 17 (2), 193-203 (2005).

2. A. Fontes, K. Ajito, A. A. R. Neves, W. L. Moreira, A. A. de Thomaz, L. C. Barbosa, A. M. de Paula, and C. L. Cesar, "Raman, hyper-Raman, hyper-Rayleigh, two-photon luminescence and morphology-dependent resonance modes in a single optical tweezers system", Phys. Rev. E 72 (1), 012903 (2005).

3. C. X. Han, N. Kasai, and K. Torimitsu, "Apoptosis induced by bicuculline involves the P/Q-type voltage-dependent calcium channel in rat hippocampal slice cultures", Epilepsia 46, 11-11 (2005).

4.
C. X. Han, N. Kasai, and K. Torimitsu, "CA2: the most vulnerable sector to bicuculline exposure in rat hippocampal slice cultures", Neuroreport 16 (4), 333-336 (2005).

5. W. P. Hu, H. Nakashima, K. Furukawa, Y. Kashimura, K. Ajito, Y. Q. Liu, D. B. Zhu, and K. Torimitsu, "A self-assembled nano optical switch and transistor based on a rigid conjugated polymer, thioacetyl-end-functionalized poly(para-phenylene ethynylene) ", J. Am. Chem. Soc. 127 (9), 2804-2805 (2005).

6. M. Iwai, Y. Tateishi, M. Hattori, A. Mizutani, T. Nakamura, A. Futatsugi, T. Inoue, T. Furuichi, T. Michikawa, and K. Mikoshiba, "Molecular cloning of mouse type 2 and type 3 inositol 1,4,5-trisphosphate receptors and identification of a novel type 2 receptor splice variant", J. Biol. Chem. 280 (11), 10305-10317 (2005).

7. N. Kasai, C. X. Han, and K. Torimitsu, "Hydrogen peroxide distribution and neuronal cell death in a rat hippocampal slice", Sens. Actuator B-Chem. 108 (1-2), 746-750 (2005).

8. H. Nakashima, K. Furukawa, K. Ajito, Y. Kashimura, and K. Torimitsu, "Selective chemisorption of end-functionalized conjugated polymer on macro- and nanoscale-surfaces", Langmuir 21 (2), 511-515 (2005).

9. Z. H. Zhang, K. Sumitomo, and F. Lin, "Observation of B segregation on Si (113) by scanning tunneling microscopy", Ultramicroscopy 105 (1-4), 16-21 (2005).

10. Z. H. Zhang and K. Sumitomo, "Boronizing structures of Si(113) surfaces", Surf. Sci. 576 (1-3), 83-88 (2005).

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1.	T. Akasaka and T. Makimoto, "BGaN micro-islands as novel buffers for GaN hetero-epitaxy", Jpn. J. Appl. Phys. Part 2 - Lett. Express Lett. 44 (50-52), L1506-L1508 (2005).
2.	T. Akasaka, H. Gotoh, H. Nakano, and T. Makimoto, "Blue-purplish InGaN quantum wells with shallow depth of exciton localization", Appl. Phys. Lett. 86 (19), 191902 (2005).
3.	M. Kasu, K. Ueda, H. Ye, Y. Yamauchi, S. Sasaki, and T. Makimoto, "2W/mm output power density at 1 GHz for diamond FETs", Electron. Lett. 41 (22), 1249-1250 (2005).
4.	K. Kumakura and T. Makimoto, "High-voltage operation with high current gain of pnp AlGaN/GaN heterojunction bipolar transistors with thin n-type GaN base", Appl. Phys. Lett. 86 (2), 023506 (2005).
5.	K. Kumakura, T. Makimoto, N. Kobayashi, T. Hashizume, T. Fukui, and H. Hasegawa, "Minority carrier diffusion length in GaN- Dislocation density and dopoing concentration dependence", Appl. Phys. Lett. 86 (5), 052105 (2005).
6.	K. Kumakura, Y. Yamauchi, and T. Makimoto, "High power operation of Pnp AlGaN/GaN heterojunction bipolar transistors", Phys. Stat. Sol. (c), 2 (7), 2589-2592 (2005).
7.	J. Kurian, H. Sato, T. Makimoto, and M. Naito, "Silver-assisted growth of NdBa₂Cu₃O₇-delta thin films: An approach for the growth of superior quality ceramic oxide films", Appl. Phys. Lett. 87 (2), 022501 (2005).
8.	J. Kurian and M. Naito, "MBE growth of large area RE-123 superconductor thin films for microwave applications", IEEE Trans. Appl. Supercond. 15 (2), 2966-2969 (2005).
9.	H. S. Lee, H. J. Kim, H. J. Kim, M. H. Jung, Y. Jo, S. I. Lee, A. Tsukada, and M. Naito, "Three-dimensional superconductivity of the structurally two-dimensional superconductor La_1.87Y_0.13CuO₄: study of an angle-dependent critical current density", Supercond. Sci. Technol. 18 (7), 944-947 (2005).
10.	N. Maeda, T. Makimura, T. Maruyama, C. X. Wang, M. Hiroki, H. Yokoyama, T. Makimoto, T. Kobayashi, and T. Enoki, "DC and RF characteristics in Al₂O₃/Si₃N₄ insulated-gate AlGaN/GaN heterostructure field-effect transistors", Jpn. J. Appl. Phys. Part 2 - Lett. Express Lett. 44 (20-23), L646-L648 (2005).
11.	N. Maeda, T. Makimura, C. X. Wang, M. Hiroki, T. Makimoto, T. Kobayashi, and T. Enoki, "Al₂O₃/Si₃N₄ Insulated Gate Channel-doped AlGaN/GaN Heterostructure Field-Effect Transistors with Regrown Ohmic Structure: Low Gate Leakage Current with High Transconductance", Jpn. J. Appl. Phys. Part 1 ― Regul. Pap. Short Notes Rev. Pap. 44 (4B), 2747-2750 (2005).
12.	N. Maeda, C. X. Wang, T. Enoki, T. Makimoto, and T. Tawara, "High drain current density and reduced gate leakage current in channel-doped AlGaN/GaN heterostructure field-effect transistors with Al₂O₃/Si₃N₄ gate insulator", Appl. Phys. Lett., 87 (7), 073504 (2005).
13.	T. Makimoto, Y. Yamauchi, T. Kido, K. Kumakura, Y. Taniyasu, M. Kasu, and N. Matsumoto, "Strained Thick p-InGaN Layers for GaN/InGaN Heterojunction Bipolar Transistors on Sapphire Substrates", Jpn. J. Appl. Phys. Part 1 ― Regul. Pap. Short Notes Rev. Pap. 44 (4B), 2722-2725 (2005).
14.	T. Matsuoka, "Progress in nitride semiconductors from GaN to InN - MOVPE growth and characteristics", Superlattices Microstruct. 37 (1), 19-32 (2005).
15.	T. Mitate, S. Mizuno, H. Takahata, R. Kakegawa, T. Matsuoka, and N. Kuwano, "InN polarity determination by convergent-beam electron diffraction", Appl. Phys. Lett. 86 (13), 134103 (2005).
16.	A. Nishikawa, K. Kumakura, T. Akasaka, and T. Makimoto, "Current-voltage characteristics of p-InGaN/n-GaN vertical conducting diodes on n⁺-SiC substrates", Appl. Phys. Lett. 87 (23), 233505 (2005).
17.	M. Noda, A. Tsukada, H. Yamamoto, and M. Naito, "Origin of superconducting carriers in "non-doped" T'-(La,RE)(2)CuO₄ (RE = Sm, Eu, Gd, Tb, Lu, and Y) prepared by molecular beam epitaxy", Physica C 426, 220-224 (2005).
18.	H. Oyanagi, N. L. Saini, A. Tsukada, and M. Naito, "Lattice anomalies in (La,Sr)(2)CuO₄ under epitaxial strain probed by polarized X-ray absorption spectroscopy", J. Supercond. 18 (5-6), 731-735 (2005).
19.	H. Sato and J. Kurian, "Superconducting bandpass filters on thin films of NdBa₂Cu₃O₇", Physica C 426, 1616-1621 (2005).
20.	A. Tsukada, H. Yamamoto, and M. Naito, "Ce doping in T-La₂CuO₄ films: Broken electron-hole symmetry for high-T-c superconductivity", Physica C 426, 454-458 (2005).
21.	A. Tsukada, M. Noda, H. Yamamoto, and M. Naito, "Role of impurity oxygen in superconductivity of "non-doped" T '-(La, RE)(2)CuO₄", Physica C 426, 459-463 (2005).
22.	A. Tsukada, Y. Krockenberger, M. Noda, H. Yamarnoto, D. Manske, L. Alff, and M. Naito, "New class of T '-structure cuprate superconductors", Solid State Commun. 133 (7), 427-431 (2005).
23.	K. Ueda, S. Saito, K. Semba, T. Makimoto, and M. Naito, "All-MgB₂ Josephson tunnel junctions", Appl. Phys. Lett. 86 (17), 172502 (2005).
24.	C. X. Wang, N. Maeda, M. Hiroki, T. Tawara, T. Makimoto, T. Kobayashi, and T. Enoki, "Comparison of AlGaN/GaN insulated gate heterostructure field-effect transistors with ultrathin Al₂O₃/Si₃N₄ bilayer and Si₃N₄ single layer", Jpn. J. Appl. Phys. Part 1 - Regul. Pap. Short Notes Rev. Pap. 44 (4B), 2735-2738 (2005).
25.	H. T. Ye, H. X. Yan, and R. B. Jackman, "Dielectric properties of single crystal diamond", Semicond. Sci. Technol. 20 (3), 296-298 (2005).

1.	P. Finnie, Y. Homma, and J. Lefebvre, "Band-gap shift transition in the photoluminescence of single-walled carbon nanotubes", Phys. Rev. Lett. 94 (24), 247401 (2005).
2.	S. Fujikawa, T. Kawamura, S. Bhunia, Y. Watanabe, K. Tokushima, Y. Tsusaka, Y. Kagoshima, and J. I. Matsui, "Real-time observation of fractional-order x-ray reflection profiles of InP(001) during step-flow growth", Jpn. J. Appl. Phys. Part 2 - Lett. Express Lett. 44 (1-7), L144-L146 (2005).
3.	H. Hibino, Y. Watanabe, C. W. Hu, and I. S. T. Tsong, "Thermal decay of superheated 7 x 7 islands and supercooled "1 x 1" vacancy islands on Si(111) ", Phys. Rev. B 72 (24), 245424 (2005).
4.	H. Hibino and Y. Watanabe, "Arrangement of Au-Si alloy islands at atomic steps", Surf. Sci. 588 (1-3), L233-L238 (2005).
5.	H. Hibino and Y. Watanabe, "Growth of twinned epitaxial layers on Si(111)root 3x root 3-B studied by low-energy electron microscopy", Jpn. J. Appl. Phys. Part 1 - Regul. Pap. Short Notes Rev. Pap. 44 (1A), 358-364 (2005).
6.	Y. Homma, D. Takagi, S. Suzuki, K. Kanzaki, and Y. Kobayashi, "Electron-microscopic imaging of single-walled carbon nanotubes grown on silicon and silicon oxide substrates", J. Electron Microsc. 54, I3-I7 (2005).
7.	Y. Homma, "Summary of ISO/TC 201 standard: X ISO 17560: 2002 - Surface chemical analysis - Secondary ion mass spectrometry - Method for depth profiling of boron in silicon", Surf. Interface Anal. 37 (1), 90-91 (2005).
8.	G. H. Jeong, S. Suzuki, Y. Kobayashi, A. Yamazaki, H. Yoshimura, and Y. Homma, "Effect of nanoparticle density on narrow diameter distribution of carbon nanotubes and particle evolution during chemical vapor deposition growth", J. Appl. Phys. 98 (12), 124311 (2005).
9.	G. H. Jeong, A. Yamazaki, S. Suzuki, H. Yoshimura, Y. Kobayashi, and Y. Homma, "Cobalt-filled apoferritin for suspended single-walled carbon nanotube growth with narrow diameter distribution", J. Am. Chem. Soc. 127 (23), 8238-8239 (2005).
10.	A. Kaneko, Y. Homma, H. Hibino, and T. Ogino, "Ultrahigh vacuum scanning electron microscope system combined with wide-movable scanning tunneling microscope", Rev. Sci. Instrum. 76 (8), 083709 (2005).
11.	T. Kawamura, S. Bhunia, Y. Watanabe, S. Fujikawa, J. Matsui, Y. Kagoshima, and Y. Tsusaka, "High-resolution x-ray diffraction analysis of epitaxially grown indium phosphide nanowires", J. Appl. Phys. 97 (8), 084318 (2005).
12.	T. Matsumoto, Y. Homma, and Y. Kobayashi, "Bridging growth of single-walled carbon nanotubes on nanostructures by low-pressure hot-filament chemical vapor deposition", Jpn. J. Appl. Phys. Part 1 - Regul. Pap. Brief Commun. Rev. Pap. 44 (10), 7709-7712 (2005).
13.	H. Omi and Y. Homma, "Self-ordering on vicinal Si (111) during molecular beam epitaxy", Phys. Rev. B 72 (19), 195322 (2005).
14.	H. Omi, Y. Homma, V. Tonchev, and A. Pimpinelli, "New types of unstable step-flow growth on Si(111)-(7 x 7) during molecular beam epitaxy: Scaling and universality", Phys. Rev. Lett. 95 (21), 216101 (2005).
15.	H. Omi, T. Kawamura, S. Fujikawa, Y. Tsusaka, Y. Kagoshima, and J. Matsui, "In-plane strain distribution in the surface region of thin silicon overlayers on insulator", Appl. Phys. Lett. 86 (26), 263112 (2005).
16.	V. Peano, M. Thorwart, A. Kasper, and R. Egger, "Nanoscale atomic waveguides with suspended carbon nanotubes", Appl. Phys. B-Lasers Opt. 81 (8), 1075-1080 (2005).
17.	S. Suzuki and Y. Kobayashi, "Conductivity decrease in carbon nanotubes caused by low-acceleration-voltage electron irradiation", Jpn. J. Appl. Phys. Part 2 - Lett. Express Lett. 44 (46-49), L1498-L1501 (2005).
18.	S. Suzuki, Y. Watanabe, Y. Homma, S. Y. Fukuba, A. Locatelli, and S. Heun, "Photoemission electron microscopy of individual single-walled carbon nanotubes", J. Electron Spectrosc. Relat. Phenom. 144, 357-360 (2005).
19.	S. Suzuki, H. Yamamoto, F. Maeda, Y. Watanabe, K. Yamada, and T. Kiyokura, "Beamline for angle-resolved photoemission spectroscopy at low-temperature constructed at NTT Atsugi R&D Center", J. Electron Spectrosc. Relat. Phenom. 144, 1109-1112 (2005).
20.	S. Suzuki, D. Takagi, Y. Homma, and Y. Kobayashi, "Selective removal of carbon nanotubes utilizing low-acceleration-voltage electron irradiation damage", Jpn. J. Appl. Phys. Part 2 - Lett. Express Lett. 44 (1-7), L133-L135 (2005).
21.	D. Takagi, Y. Homma, S. Suzuki, and Y. Kobayashi, "Vertical growth of individual single-walled carbon nanotubes on silicon and SiO2 substrates", Jpn. J. Appl. Phys. Part 1 - Regul. Pap. Short Notes Rev. Pap. 44 (4A), 1564-1568 (2005).
22.	A. Vijayaraghavan, K. Kanzaki, S. Suzuki, Y. Kobayashi, H. Inokawa, Y. Ono, S. Kar, and P. M. Ajayan, "Metal-semiconductor transition in single-walled carbon nanotubes induced by low-energy electron irradiation", Nano Lett. 5 (8), 1575-1579 (2005).
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