(1) |
K. Muraki, "Spin-dependent phase diagram in bilayer 2D electron systems",
APS March Meeting 2010, Oregon, U.S.A. (Mar. 2009). |
(2) |
M. Nagase, H. Hibino, H. Kageshima, and H. Yamaguchi, "Novel microscopies for graphene on SiC", 2009 RCIQE (Research Center for Integrated Quantum Electronics) International Seminar, Sapporo, Japan (Mar. 2009). |
(3) |
H. Yamaguchi, "Micro/Nanomechanical systems based on compound semiconductor
heterostructures", Frontiers in Nanoscale Science and Technology 2009
(FNST 2009), Boston, U.S.A (May 2009). |
(4) |
K. Muraki, "New lights on the ground-state phase diagrams of bilayer
electron systems", Emergent Phenomena in Quantum Hall Systems 3 (EPQHS-3),
Capannori (Lucca), Italy (Jun. 2009). |
(5) |
M. Nagase, H. Hibino, H. Kageshima, and H. Yamaguchi, "Metrology of microscopic properties of graphene on SiC", 2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices, Busan, Korea (Jun. 2009). |
(6) |
H. Yamaguchi,"Heterostructure-based micro/nanomechanical systems",
The 18th International Conference on Electronic Properties of Two-Dimensional
Systems (EP2DS), Kobe, Japan (Jul. 2009). |
(7) |
K. Semba, J. Johansson, K. Kakuyanagi, H. Nakano, S. Saito, H. Tanaka,
and H. Takayanagi, "Quantum state control, entanglement, and readout
of the Josephson persistent current qubit", Solid State Based Quantum
Information Processing 2009 (QIP 2009), München, Germany, (Jul. 2009). |
(8) |
H. Yamaguchi, "Compound semiconductor micro/nanomechanical systems", 8th Topical Workshop on Heterostructure Microelectronics (TWHM2009), Nagano, Japan (Aug. 2009). |
(9) |
A. Fujiwara, K. Nishiguchi, and Y. Ono, "Single-electron devices based
on silicon nanowire MOSFETs", 10th Trends in Nanotechnology International
Conference (TNT 2009), Barcelona, Spain, (Sep. 2009). |
(10) |
A. Fujiwara, K. Nishiguchi, and Y. Ono, "Silicon nanowire MOSFETs
and their application to single-electron device", International Conference
on Nanoscience and Technology, China 2009 (ChinaNANO 2009), Beijing, China
(Sep. 2009). |
(11) |
Y. Ono, M. Khalafalla, S. Horiguchi, K. Nishiguchi, and A. Fujiwara, "Identification of single boron acceptors in nanowire MOSFETs", 2009 International Conference on Solid State Devices and Materials (SSDM 2009), Sendai, Japan (Oct. 2009). |
(12) |
I. Mahboob and H. Yamaguchi, "Electromechanical systems for memory
and logic devices", 2009 International Conference on. Solid State
Devices and Materials (SSDM 2009). Sendai, Japan, (Oct. 2009). |
(13) |
H. Kageshima, H. Hibino, and M. Nagase, "Epitaxial graphene growth using LEEM and first-principles", 13th International Conference on Silicon Carbide and Related Materials (ICSCRM 2009), Nürnberg, Germany, (Oct. 2009). |
(14) |
K. Semba, "Control of entanglement and quantum superposition of superconducting persistent current qubit few photon system", 22nd International Symposium on Superconductivity 2009 (ISS 2009), Tsukuba, Japan, (Nov. 2009). |
(15) |
K. Semba, "Superconducting qubit as an entanglement generator",
Quantum Technologies: Information and Communication (QTIC 2009), Tokyo,
Japan (Dec. 2009). |
(16) |
M. Nagase, H. Hibino, H. Kageshima, and H. Yamaguchi, "Microscopic
characterization of few-layer graphene on SiC", International Symposium
on Advanced Nanodevices and Nanotechnology (ISANN 2009), Hawaii, U.S.A.
(Dec. 2009). |
(17) |
M. Nagase, H. Hibino, H. Kageshima, and H. Yamaguchi, "Microscopic
characterization of few-layer graphene on SiC using an integrated nanogap
probe", 17th International Colloquium on Scanning Probe Microscopy
(ICSPM 17), Izu, Japan (Dec. 2009). |