List of Invited Talks at International Conferences (2009)
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II. Physical Science Laboratory
(1) K. Muraki, "Spin-dependent phase diagram in bilayer 2D electron systems", APS March Meeting 2010, Oregon, U.S.A. (Mar. 2009).
(2) M. Nagase, H. Hibino, H. Kageshima, and H. Yamaguchi, "Novel microscopies for graphene on SiC", 2009 RCIQE (Research Center for Integrated Quantum Electronics) International Seminar, Sapporo, Japan (Mar. 2009).
(3) H. Yamaguchi, "Micro/Nanomechanical systems based on compound semiconductor heterostructures", Frontiers in Nanoscale Science and Technology 2009 (FNST 2009), Boston, U.S.A (May 2009).
(4) K. Muraki, "New lights on the ground-state phase diagrams of bilayer electron systems", Emergent Phenomena in Quantum Hall Systems 3 (EPQHS-3), Capannori (Lucca), Italy (Jun. 2009).
(5) M. Nagase, H. Hibino, H. Kageshima, and H. Yamaguchi, "Metrology of microscopic properties of graphene on SiC", 2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices, Busan, Korea (Jun. 2009).
(6) H. Yamaguchi,"Heterostructure-based micro/nanomechanical systems", The 18th International Conference on Electronic Properties of Two-Dimensional Systems (EP2DS), Kobe, Japan (Jul. 2009).
(7) K. Semba, J. Johansson, K. Kakuyanagi, H. Nakano, S. Saito, H. Tanaka, and H. Takayanagi, "Quantum state control, entanglement, and readout of the Josephson persistent current qubit", Solid State Based Quantum Information Processing 2009 (QIP 2009), München, Germany, (Jul. 2009).
(8) H. Yamaguchi, "Compound semiconductor micro/nanomechanical systems", 8th Topical Workshop on Heterostructure Microelectronics (TWHM2009), Nagano, Japan (Aug. 2009).
(9) A. Fujiwara, K. Nishiguchi, and Y. Ono, "Single-electron devices based on silicon nanowire MOSFETs", 10th Trends in Nanotechnology International Conference (TNT 2009), Barcelona, Spain, (Sep. 2009).
(10) A. Fujiwara, K. Nishiguchi, and Y. Ono, "Silicon nanowire MOSFETs and their application to single-electron device", International Conference on Nanoscience and Technology, China 2009 (ChinaNANO 2009), Beijing, China (Sep. 2009).
(11) Y. Ono, M. Khalafalla, S. Horiguchi, K. Nishiguchi, and A. Fujiwara, "Identification of single boron acceptors in nanowire MOSFETs", 2009 International Conference on Solid State Devices and Materials (SSDM 2009), Sendai, Japan (Oct. 2009).
(12) I. Mahboob and H. Yamaguchi, "Electromechanical systems for memory and logic devices", 2009 International Conference on. Solid State Devices and Materials (SSDM 2009). Sendai, Japan, (Oct. 2009).
(13) H. Kageshima, H. Hibino, and M. Nagase, "Epitaxial graphene growth using LEEM and first-principles", 13th International Conference on Silicon Carbide and Related Materials (ICSCRM 2009), Nürnberg, Germany, (Oct. 2009).
(14) K. Semba, "Control of entanglement and quantum superposition of superconducting persistent current qubit few photon system", 22nd International Symposium on Superconductivity 2009 (ISS 2009), Tsukuba, Japan, (Nov. 2009).
(15) K. Semba, "Superconducting qubit as an entanglement generator", Quantum Technologies: Information and Communication (QTIC 2009), Tokyo, Japan (Dec. 2009).
(16) M. Nagase, H. Hibino, H. Kageshima, and H. Yamaguchi, "Microscopic characterization of few-layer graphene on SiC", International Symposium on Advanced Nanodevices and Nanotechnology (ISANN 2009), Hawaii, U.S.A. (Dec. 2009).
(17) M. Nagase, H. Hibino, H. Kageshima, and H. Yamaguchi, "Microscopic characterization of few-layer graphene on SiC using an integrated nanogap probe", 17th International Colloquium on Scanning Probe Microscopy (ICSPM 17), Izu, Japan (Dec. 2009).

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