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| A-plane AlN LED | Emission spectrum of A-plane AlN LED |
Radiation properties of A-plane and C-plane LED |
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| A-plane AlN LED | Emission spectrum of A-plane AlN LED |
Radiation properties of A-plane and C-plane LED |
Emission Mechanism of AlN Deep-Ultraviolet Light-Emitting Diode We have developed an aluminum nitride (AlN) deep-ultraviolet light-emitting diode (LED) with a wavelength of 210 nm, which is the shortest wavelength ever observed from any semiconductor. Due to a unique valence band structure (negative crystal-field splitting energy), AlN has a strong polarization property and therefore its emission intensity largely changes depending on the crystal planes of its surface. Here, for improving the AlN LED’s emission efficiency, we propose an A-plane LED structure, which shows strong surface emission compared with the conventional C-plane one. (Page 16)
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