Schematic illustration of the vertical-type
transferred LED.
Photograph of the transferred AlGaN/GaN
structure on the foreign sapphire substrate.

Optical Image of the Blue-Light Electroluminescence from theTransferred Vertical-Type Light-Emitting Diode

We demonstrate that hexagonal boron nitride can form a release layer that enables the mechanical transfer of gallium nitride-based devices structures onto foreign substrates. For the vertical-type transferred lightemitting diode (LED), after the LED structure had been released, the electrodes were deposited on the back side of the LED. Then, we mounted it onto the indium sheet. An AlGaN/GaN heterostructure, an InGaN/GaN multiple-quantum-well (MQW) structure, and the MQW LED, in area from five millimeters square to two centimeters square, are then mechanically released from the sapphire substrates and successfully transferred onto other substrates. (Page 14)