Distinguished Researchers

Akira FUJIWARA received his B.S., M.S., and Ph.D. degrees in applied physics from The University of Tokyo, Japan in 1989, 1991, and 1994, respectively. He joined NTT LSI Laboratories, Nippon Telegraph and Telephone Corporation in 1994 and moved to NTT Basic Research Laboratories in 1996. Since 1994, he has been engaged in research on silicon nanostructures and their application to single-electron devices. He was a guest researcher at the National Institute of Standards and Technology (NIST), Gaithersburg, MD, USA during 2003-2004. He was a director of the Japanese Society of Applied Physics in 2010 and 2011 and a visiting professor of Hokkaido University in 2013. He was appointed as Distinguished Researcher of NTT in 2007. He is currently a senior manager of Physical Science Laboratory and a group leader of Nanodevices Research Group. He received the SSDM Young Researcher Award in 1998, SSDM Paper Award in 1999, and Japanese Journal of Applied Physics (JJAP) Paper Awards in 2003 , 2006, and 2013. He was awarded the Young Scientist Award from the Minister of MEXT (Ministry of Education, Culture, Sports, Science, and Technology) in 2006. He is a member of the Japan Society of Applied Physics and the IEEE.

Yoshitaka TANIYASU received his B.E., M.E., and Dr. Eng. degrees in electrical engineering from Chiba University, Chiba, Japan in 1996, 1998, and 2001, respectively. He joined NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation in 2001. Since then, he has been engaged in research on wide-bandgap nitride semiconductors. He was a visiting researcher at Ecole polytechnique fédérale de Lausanne (EPFL) during 2011-2012. He was appointed as Distinguished Researcher of NTT in 2010. He is currently a member of Thin-Film materials Research Group. He received the Young Scientist Presentation Award at the Japan Society of Applied Physics (JSAP) in 2001, the Young Scientist Award at the 14th Semiconducting and Insulating Materials Conference in 2007, the Young Scientists’ Prize from the Minister of Education, Culture, Sports, Science and Technology, the Young Scientist Award at the 38th International Symposium on Compound Semiconductors in 2011, and the Best Paper Award at the International Workshop on Nitride Semiconductors in 2012. He is a member of the Japan Society of Applied Physics.

Norio KUMADA received his B.S., M.S., and Ph.D. degrees in physics from Tohoku University, Japan, in 1998, 2000, and 2003, respectively. He joined NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation in 2003. Since then, he has been engaged in the study of highly correlated electronic states in semiconductor heterostructures. He was a visiting researcher at CEA Saclay during 2013-2014. He was appointed as Distinguished Researcher of NTT in 2010. He is currently a member of Quantum Solid State Physics Research Group. He received the Young Scientist Award of the Physical Society of Japan in 2008, and the Young Scientists’ Prize from the Minister of Education, Culture, Sports, Science and Technology in 2012. He is a member of the Physical Society of Japan.

Katsuhiko NISHIGUCHI received his B.E., M.E., and Ph.D. in electrical engineering from Tokyo Institute of Technology, Japan in 1998, 2000, and 2002, respectively. He joined NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation in 2002. Since then, he has been engaged in the research on physics and technology of Si nanometer-scale devices for LSI applications with low power consumption and new functions. He was an invited researcher at the National Center for Scientific Research (CNRS), France during September 2008 and also a guest researcher at Delft University of Technology, Delft, the Netherlands during 2012-2013. He was appointed as Distinguished Researcher of NTT in 2011. He is currently a member of Nanodevices Research Group. He received IUPAP Young Author Best Paper Award at the International Conference on Physics of Semiconductors 2000, Graduate Student Award Silver at the Materials Research Society 2000 Fall Meeting, Young Scientist Award at the Japan Society of Applied Physics Spring Meeting in 2000, JSAP Outstanding Paper Award 2013, and The Commendation for Science and Technology by the Minister of Education, Culture, Sports, Science and Technology of Japan (the Young Scientists' Prize) in 2013. He is a member of the Japan Society of Applied Physics.

Shiro SAITO received his B.S., M.S., and Dr. Eng. degrees in applied physics from The University of Tokyo, Japan, in 1995, 1997, and 2000, respectively. He joined NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation in 2000. Since then, he has been engaged in quantum information processing using superconducting circuits. He was a guest researcher at Delft University of Technology, Delft, the Netherlands during 2005-2006. He is a guest associate professor in Tokyo University of Science from 2012. He was appointed as Distinguished Researcher of NTT in 2012. He is currently a member of Hybrid Nano-Structure Physics Research Group. He received the Young Scientist Presentation Award at the Japan Society of Applied Physics (JSAP) Spring Meeting in 2004. He is a member of the Physical Society of Japan and the Japan Society of Applied Physics.

Hiroki TAKESUE received his B.E., M.E., and Ph.D. degrees in engineering science from Osaka University, Japan, in 1994, 1996, and 2002, respectively. He joined NTT Access Network Systems Laboratories, Nippon Telegraph and Telephone Corporation in 1996 and moved to NTT Basic Research Laboratories in 2003. Since then, he has been engaged in research on optical access networks using wavelength division multiplexing and experimental quantum optics and quantum communications. He was appointed as Distinguished Researcher of NTT in 2013. He is currently a member of Quantum Optical State Control Research Group. He received several awards including the ITU-T Kaleidoscope Conference 2nd Best Paper Award in 2008 and The Commendation for Science and Technology by the Minister of Education, Culture, Sports, Science and Technology of Japan (the Young Scientists' Prize) in 2010. He was a Visiting Scholar at Stanford University, Stanford, CA from 2003 to 2004, and a guest researcher at the National Institute of Standards and Technology (NIST), Boulder, CO in 2014. He is a member of IEEE and the Japan Society of Applied Physics.

Imran MAHBOOB received a combined B.Sc. and M.Sc. degree in Theoretical Physics from The University of Sheffield, U.K., in 2001 and Ph.D. degree in Physics studying the electronic properties of nitride semiconductors from The University of Warwick, U.K., in 2004, respectively. He joined NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation in 2005 as a Research Associate, from 2008 as a Research Specialist, and from 2012 as a Senior Research Scientist. His current interests are developing electromechanical resonators for digital signal processing applications and to study their non-linear dynamics. He was appointed as Distinguished Researcher of NTT in 2013. He is currently a member of Hybrid Nano-Structure Physics Research Group. He received the Clarke Prize in Physics from the University of Sheffield in 2001 and the Young Scientist Award at the 2003 Physics of Semiconductors and Interfaces conference. He is a member of the American Physical Society.

Haruki SANADA received his B.E., M.E., and Ph.D. degrees in electrical engineering from Tohoku University, Japan, in 2001, 2002, and 2005 respectively. He joined NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation in 2005. His research interests are optical and spin properties of low-dimensional semiconductor nanostructures, and their application to solid-state quantum information processing. He is a visiting researcher at Chalmers University of Technology, Sweden in 2015. He was appointed as Distinguished Researcher of NTT in 2014. He is currently a member of Quantum Optical Physics Research Group. He received the Young Scientist Presentation Award at the Japan Society of Applied Physics (JSAP) Autumn Meeting in 2004, the SSDM Paper Award in 2010, and the RIEC Award from Tohoku University in 2014. He is a member of the Japan Society of Applied Physics.

Yoshiharu KROCKENBERGER received his diploma in physics from The University of Technology of Munich, Germany, studying tunneling spectroscopy on superconductors. Working at the Max Planck Institute for Solid State Research in Stuttgart, Germany, on transition metal oxides with strong electron correlations he received his PhD degree from The University of Technology of Darmstadt, Germany in 2006. At the end of 2006 he joined the Correlated Electron Research Center at The Institute for Advanced Industrial Science and Technology in Tsukuba, Japan as a research scientist. In 2008, he moved to RIKEN in Wako, Japan where he was engaged as a research scientist at the Cross-Correlated Materials Research group. He joined NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation in 2010. His interests are development of novel superconducting materials and competing order parameters in strongly-correlated electronic systems. He was appointed as Distinguished Researcher of NTT in 2013. He is currently a member of Low-Dimensional Nanomaterials Research Group. He received the Young Scientist Award for an Excellent Article from Superconductivity Division of Japan Society of Applied Physics in 2012. He is a member of American Physical Society, Materials Research Society, and The Japanese Society of Applied Physics.