Distinguished Technical Member
Yoshiro Hirayama was born in Kanagawa on
July 18, 1955. He received the B.E., M.S.
and Ph.D. degrees in electrical engineering
from the University of Tokyo in 1978, 1980
and 1983, respectively. He joined NTT Basic
Research Laboratories in 1983. He was a guest
scientist in Max-Planck-Institut fur Festkorperforschung,
Stuttgart, Germany during 1990-1991. Since
1983 he has engaged in the study of semiconductor
fine structures fabricated by focused-ion-beam
technique, transport characteristics of semiconductor
mesoscopic systems and ballistic transport
in high-mobility semiconductors. His current
interests are transport properties of semiconductor
layer and nano structures including carrier
interaction phenomena. He is a research coordinator
of NEDO international joint research project
(NTDP-98) since 1998, and also a coordinator
of CREST research team for interacting carrier
electronics since 1999. He is an associate
editor of Japanese Journal of Applied Physics,
and a member of the Japan society of Applied
Physics, the Physical Society of Japan and
IEEE.
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