Distinguished Technical Member
Yoshiro Hirayama was born in Kanagawa on July 18, 1955. He received the B.E., M.S. and Ph.D. degrees in electrical engineering from the University of Tokyo in 1978, 1980 and 1983, respectively. He joined NTT Basic Research Laboratories in 1983. He was a guest scientist in Max-Planck-Institut fur Festkorperforschung, Stuttgart, Germany during 1990-1991. Since 1983 he has engaged in the study of semiconductor fine structures fabricated by focused-ion-beam technique, transport characteristics of semiconductor mesoscopic systems and ballistic transport in high-mobility semiconductors. His current interests are transport properties of semiconductor layer and nano structures including carrier interaction phenomena. He is a research coordinator of NEDO international joint research project (NTDP-98) since 1998, and also a coordinator of CREST research team for interacting carrier electronics since 1999. He is an associate editor of Japanese Journal of Applied Physics, and a member of the Japan society of Applied Physics, the Physical Society of Japan and IEEE.