AlGaN Multi-Quantum-Well Ultraviolet Light
Emitting Diode
Toshio Nishida, Hisao Saito, and N. Kobayashi
Physical Science Laboratory
Ultraviolet (UV) light is chemically active
and has precise spatial resolution. Therefore,
a compact and efficient UV light source will
provide a variety of applications in the
fields of chemistry, biology, environmental
science, and optics. However, present UV
light sources are power consumptive and quite
large in size. Semiconductor UV light sources,
such as light emitting diodes (LEDs), represent
a solution to this problem. Nitrides containing
aluminium (Al) have a band gap in the wavelength
range between 200 nm and 360 nm. Although
the potential of nitrides as the UV light
source material has been theoretically discussed,
practical verification had not been possible
due to the difficulty of nitride crystal
growth. By employing a sophisticated metalorganic
vapor phase epitaxy (MOVPE) technique, we
have demonstrated the operation of nitride
UV-LED at a wavelength shorter than 350 nm,
for the first time.
Atomically flat epitaxial growth and an understanding
of polarization field in nitride hetero-structures
are indispensable to achieving UV-LED operation.
Figure 1 shows an atomic force microscope
(AFM) image of a GaN surface prepared by
our MOVPE. The surface consists of a regular
step array of GaN with unit-cell height,
showing atomically flat growth [1]. By utilizing
this flat growth mode, we have grown GaN
quantum wells that are only 4 and 8 molecular
layers thick, and confirmed that extraordinary
polarization field as strong as 700 kV/cm
[2]. This polarization field makes emission
wavelength longer and emission efficiency
lower [2, 3]. To suppress the polarization
field, we have designed and fabricated an
AlGaN-based multi-quantum-well LED. Figure
2 shows its emission spectra under current
injection, indicating successful band edge
emission at the wavelength of 346 nm [3].
[1] T. Nishida et al., Jpn. J. Appl. Phys.
37 (1998) L459.
[2] T. Nishida et al., Int. Conf. on Blue
Laser and Light Emitting Diode 1998.
[3] T. Nishida and N. Kobayashi, Phys. Stat.
Sol. A 176 (1999) 45.
Fig. 1. AFM image of GaN surface.
Fig. 2. Emission spectra from AlGaN-UV-LED.
Back