ۉcҍuꗗ@i2003Nxj

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iPj K. Kanisawa, Y. Tokura, H. Yamaguchi, and Y. Hirayama, gDirect probing of local-density-of-states in semiconductor nanostructuresh, Photonics West, San Jose, USA (Jan. 2003).
iQj K. Kanisawa, Y. Tokura, H. Yamaguchi, and Y. Hirayama, gScanning tunneling spectroscopy study of zero-dimensional structures at the InAs surfaceh, 30th Conf. on Phys. and Chem. of Semicond. Interfaces (PCSI-30), Salt Lake City, USA (Jan. 2003).
iRj H. Yamaguchi, S. Miyashita, and Y. Hirayama gFabrication and Characterization of InAs-based Electromechanical Systemsh, 2003 RCIQE International Seminar on Quantum Nanoelectronics for Meme-Media-Based Information Technologies, Sapporo, Japan (Feb. 2003).
iSj T. Fujisawa, gSingle electron dynamics in quantum dotsh, Sweden-Japan Nanotechnology Colloquium, Lund, Sweden (Mar. 2003).
iTj T. Makimoto, K. Kumakura, and N. Kobayashi, gnpn-Type Nitride Heterojunction Bipolar Transistorsh, 2003 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices (AWAD2003), Busan, Korea (Jun. 2003).
iUj M. Kasu and N. Kobayashi, gInfluence of epitaxy on the surface conduction of diamond filmh, 2003 European Materials Research Society Spring Meeting (E-MRS2003), Strasbourg, France (Jun. 2003).
iVj Y. Hirayama, gQuantum Hall Effects at Landau Level Crossingsh, Int. Symp. on Quantum Hall Effects: Past, Present, and Future, Stuttgart, Germany (Jul. 2003).
iWj T. Fujisawa, gSingle electron dynamics in quantum dotsh, The 11th International Conference on Modulated Semiconductor Structures (MSS11), Nara, Japan (Jul. 2003).
iXj T. Nishida, T. Ban, and N. Kobayashi, gNitride UV emittersh, 30th Int. Symp. Compound Semicond. (ISCS2003), San Diego, USA (Aug. 2003).
i10j Y. Hirayama, gElectronic States and Their Control in Semiconductor Quantum Dotsh, Trends in Nanotechnology (TNT2003), Salamanca, Spain (Sep. 2003).
i11j T. Matsuoka, H. Takahata, T. Mitate, S. Mizuno, and T. Makimoto, gPolarity of GaN grown on a several substrates by MOVPEh, 8th Wide-Bandgap V-Nitride Workshop, Richmond, USA (Sep. 2003).
i12j T. Matsuoka and H. Okamoto, gMOVPE Growth of InN and its Band-Gap Energyh, 8th Wide-Bandgap V-Nitride Workshop, Richmond, USA (Sep. 2003).
i13j T. Matsuoka, H. Okamoto, M. Nakao, H. Harima, H. Takahata, T. Mitate, S. Mizuno, Y. Uchiyama, and T. Makimoto: gMOVPE Growth of Wurtzite InN and its Optical Characteristicsh, 2003 Int. Conf. on Solid State Devices and Materials (SSDM2003), Tokyo, Japan (Sep. 2003).
i14j H. Yamaguchi, K. Kanisawa, S. Miyashita, and Y. Hirayama, gInAs/GaAs(111)A Heteroepitaxial Systemh, 5th International Workshop on Epitaxial Semiconductors on Patterned Substrates and Novel Index Surfaces (ESPS-NIS2003), Stuttgart, Germany (Oct. 2003).
i15j T. Fujisawa, gCoherent charge oscillations in a semiconductor double quantum doth, Int. Workshop on Correlation, Decoherence and Spin Effects in Simple and Complex Quantum Dot Systems, Bad Honnef, Germany (Oct. 2003).
i16j T. Nishida, gGaN-free Transparent Structure for Ultraviolet Light Emitting Diodesh, Phys. of Light-Matter Coupling in Nanostructures (PLMCN3), Sicily, Italy (Oct. 2003).
i17j Y. Hirayama and T. Fujisawa, gCarrier Dynamics and Coherent Oscillation in Quantum Dotsh, 6th Int. Conf. New Phenomena in Mesoscopic Structures and The 4th Int. Conf. Surface and Interfaces in Mesoscopic Devices (NPMS-6/SIMD-4), Hawaii (Nov. 2003).
i18j T. Matsuoka, H. Okamoto, M. Nakao, H. Takahata, T. Mitate, S. Mizuno, Y. Uchiyama, H. Harima, and T. Makimoto, gMOVPE Growth of Wurtzite InN and Experimental Consideration of its Optical Characteristicsh, ONR Indium Nitride Workshop (ONR), Fremantle, Australia (Nov. 2003).
i19j T. Fujisawa, gDynamics of single-electron charge and spin in semiconductor quantum dotsh, Int. Conf. Quantum Information (ICQI), Kyoto, Japan (Dec. 2003).
i20j T. Fujisawa, gDynamics of single electron charge and spin in semiconductor quantum dotsh Solid State Quantum Information Processing Conference, Amsterdam, The Netherland (Dec. 2003).


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