Hiroshi Yamaguchi was born in Osaka on October 30, 1961. He received the B.E., M.S. in physics and Ph.D. degrees in engineering from the Osaka University in 1984, 1986 and 1993, respectively. He joined NTT Basic Research Laboratories in 1986. He was a visiting research fellow in Imperial College, University of London, U.K. during 1995-1996. Since 1986 he has engaged in the study of compound semiconductor surfaces prepared by molecular beam epitaxy mainly using electron diffraction and scanning tunneling microscopy. His current interests are mechanical and elastic properties of semiconductor low dimensional structures. He is a research coordinator of NEDO international joint research project (Nano-elasticity) during 2001-2004 and a member of the Japan Society of Applied Physics and the Physical Society of Japan. He was awarded the paper awards of the Japanese Society of Applied Physics in 1989 and 2004. From 2006, he is a guest professor in Tohoku University.
Distinguished Technical Member
Toshimasa Fujisawa was born in Tokyo on May 23, 1963. He received the B.E., M.S. and Ph.D. degrees in electrical engineering from Tokyo Institute of Technology in 1986, 1988 and 1991, respectively. He joined NTT Basic Research Laboratories in 1991. He was a guest scientist in Delft University of Technology, Delft, the Netherlands during 1997-1998. Since 2003, he is also a guest associate professor at Tokyo Institute of Technology. Since 1991 he has engaged in the study of semiconductor fine structures fabricated by focused-ion-beam technique and electron-beam lithography technique, transport characteristics of semiconductor quantum dot. His current interests are single-electron dynamics in quantum dots, and their application to quantum information technologies. He received Sir Martin Wood Prize in 2003 and JSPS (Japan Society for the Promotion of Science) Award in 2005. He is a member of the Japan Society of Applied Physics, and the Physical Society of Japan.
Distinguished Technical Member
Masaya Notomi was born in Kumamoto, Japan, on 16 February 1964. He received his B.E., M.E. and Dr. Eng. degrees in applied physics from University of Tokyo, Tokyo, Japan in 1986, 1988, and 1997, respectively. In 1988, he joined NTT Optoelectronics Laboratories. Since then, his research interest has been to control the optical properties of materials and devices by using artificial nanostructures, and engaged in research on semiconductor quantum wires/dots and photonic crystal structures. He has been in NTT Basic Research Laboratories since 1999, and is currently working on light-propagation control by use of various types of photonic crystals. From 1996-1997, he was with Linkoping University in Sweden as a visiting researcher. He is also a guest associate professor of Tokyo Institute of Technology (2003- ). He received 2006/2007 IEEE/LEOS Distinguished Lecturer Award. He is an associate editor of Japanese Journal of Applied Physics. He is a member of the Japan Society of Applied Physics, the American Physical Society, and IEEE/LEOS.
Distinguished Technical Member
Makoto Kasu was born in Tokyo on May 30, 1961. He received the B.E., M.S. and Ph.D. degrees in electrical engineering from Kyoto University in 1985, 1987 and 1990, respectively. He joined NTT Basic Research Laboratories in 1990, and is currently a group leader of Thin-Film Materials Research Group. He was a guest scientist in University of Ulm, Germany from 2002 to 2003. Since 1990 he has engaged in scanning tunneling microscope (STM)-based nanostructure fabrication and widegap semiconductors. His current interests are aluminum nitride (AlN) deep ultraviolet light-emitting diodes (LEDs) and diamond high-frequency high-power transistors. He received Electronic Materials Symposium (EMS) award. He is a member of the Japan Society of Applied Physics, the Institute of Japan, and the Japanese Society of Surface Science. He is also an invited professor of University of Paris (XIII) and the leader of SCOPE project "Diamond RF Power Devices for Microwave, Millimeter-Wave Range Power Amplifiers" of the Ministry of Internal Affairs and Communications, Japan.