(1) |
H. Yamaguchi, I. Mahboob, H. Okamoto, and K. Onomitsu, "Micro/nanoelectromechanical
systems for advanced semiconductor devices", 2010 International RCIQE/CREST
Joint Workshop, Sapporo, Japan (Mar. 2010). |
(2) |
Y. Ono, A. H. Khalafalla, K. Nishiguchi, and A. Fujiwara, "Single
dopant effects in silicon nano transistors", Single Dopant Control
(SDC2010), Leiden, Netherlands (Mar. 2010). |
(3) |
Y. Ono, M. A. H. Khalafalla, K. Nishiguchi, and A. Fujiwara, "Single
dopant effects in silicon nano transistors", The 2010 International
Symposium on Atom-scale Silicon Hybrid Nanotechnologies for 'More-than-Moore'
& 'Beyond CMOS' Era, Southampton, U.K. (Mar. 2010). |
(4) |
A. Fujiwara, K. Nishiguchi, and Y. Ono, "Single-electron transfer technology using Si nanowire MOSFETs", The 2010 International Symposium on Atom-scale Silicon Hybrid Nanotechnologies for 'More-than-Moore' & 'Beyond CMOS' Era, Southampton, U.K. (Mar. 2010). |
(5) |
K. Semba, "Manipulation of entanglement in the heterogeneous quantum
system", 5th International Workshop on "Advances in Foundations
of Quantum Mechanics and Quantum Information with Atoms and Photons"
ad memoriam of Carlo Novero & the 3rd Italian Quantum Information Science
Conference (V Quantum 2010 & 3rd IQIS2010), Torino, Italy (May 2010). |
(6) |
H. Yamaguchi, I. Mahboob, H. Okamoto, and K. Onomitsu, "Challenge
for electromechanical logic systems using compound semiconductor heterostructure",
2010 Asia-Pacific Workshop on Fundamentals and Applications of Advanced
Semiconductor Devices (AWAD2010), Tokyo, Japan (June 2010). (Plenary) |
(7) |
Y. Okazaki, S. Sasaki, and K. Muraki, "Spin/pseudospin Kondo effect in a capacitively coupled parallel double quantum dot", 30th International Conference on the Physics of Semiconductors (ICPS2010), Seoul, Korea (July 2010). |
(8) |
H. Yamaguchi, H. Okamoto, Y. Maruta, S. Ishihara, and Y. Hirayama, "Mechanical
to electrical energy transduction using a micromechanical 2DES cantilever",
16th International Conference on Molecular Beam Epitaxy (MBE2010), Berlin,
Germany (Aug. 2010). |
(9) |
K. Kanisawa, "Structure of a single hydrogenic defect in a semiconductor
quantum well", Gordon Research Conference: Defects in Semiconductors
(GRC), New London, U.S.A. (Aug. 2010). |
(10) |
H. Kageshima, H. Hibino, M. Nagase, Y. Sekine, and H. Yamaguchi, "Theoretical study on functions of graphene", The 2nd International Symposium on Graphene Devices: Technology, Physics, and Modeling (ISGD 2010), Sendai, Japan (Oct. 2010). |
(11) |
H. Kageshima, "Mechanism of nanochannel formation processes: thermal
oxidation of Si nanostructures and graphene formation on SiC", International
Conference on Solid-State and Integrated Circuit Technology (ICSICT2010),
Shanghai, China (Nov. 2010). |
(12) |
H. Kageshima, H. Hibino, M. Nagase, Y. Sekine, and H. Yamaguchi, "Theoretical
study on growth, structure, and physical properties of graphene on SiC",
Japan-Korea Symposium on Surface and Nanostructure 9th (JKSSN9), Sendai,
Japan (Nov. 2010). |
(13) |
T. Yamaguchi, H. Yamaguchi, and T. Iyoda, "Graphoepitaxy of diblock copolymers for lithographic application", 23rd International Microprocesses and Nanotechnology Conference (MNC2010), Fukuoka, Japan (Nov. 2010). |
(14) |
H. Yamaguchi, "Quantum effects of motion", Japanese-American
Frontiers of Science (JAFoS2010), Chiba, Japan (Dec. 2010). |
(15) |
K. Nishiguchi and A. Fujiwara, "Single-electron applications using
nano-wire MOSFETs", 2010 Workshop on Innovative Devices and Systems
(WINDS2010), Hawaii, U.S.A. (Dec. 2010). |