Distinguished Researchers
Akira Fujiwara was born in Tokyo, Japan on March 9, 1967. He received his B.S., M.S., and Ph.D. degrees in applied physics from The University of Tokyo, Japan in 1989, 1991, and 1994, respectively. In 1994, he joined NTT LSI Laboratories and moved to NTT Basic Research Laboratories in 1996. Since 1994, he has been engaged in research on silicon nanostructures and their application to single-electron devices. He is an executive manager of Physical Science Laboratory and a group leader of Nanodevices Research Group since April 2012. He was a guest researcher at the National Institute of Standards and Technology (NIST), Gaithersburg, MD, USA during 2003-2004. He received the SSDM Young Researcher Award in 1998, SSDM Paper Award in 1999, and Japanese Journal of Applied Physics (JJAP) Paper Awards in 2003 and 2006. He was awarded the Young Scientist Award from the Minister of MEXT (Ministry of Education, Culture, Sports, Science, and Technology) in 2006. He was a director of the Japanese Society of Applied Physics in 2010 and 2011. He is a member of the Japan Society of Applied Physics and the IEEE.
Koji Muraki was born in Tokyo, Japan in 1965. He received his B.S., M.S., and Ph.D. degrees in applied physics from The University of Tokyo, Japan, in 1989, 1991, and 1994, respectively. In 1994, he joined NTT Basic Research Laboratories, Kanagawa, Japan. Since then, he has been engaged in the growth of high-mobility heterostructures and the study of highly correlated electronic states realized in such structures. He was a guest researcher at Max-Planck Institute, Stuttgart, Germany during 2001-2002. He is a member of the Physical Society of Japan and Japan Society of Applied Physics.
Yoshitaka Taniyasu was born in Toyama, Japan on June 10, 1973. He received his B.E., M.E., and Dr. Eng. degrees in electrical engineering from Chiba University, Chiba, Japan in 1996, 1998, and 2001, respectively. He joined NTT Basic Research Laboratories in 2001. He has been engaged in research on epitaxial growth and device application of wide bandgap nitride semiconductors. He was a visiting researcher at Ecole polytechnique fédérale de Lausanne (EPFL) during 2011-2012. He received the Young Scientist Award at the 14th Semiconducting and Insulating Materials Conference (SIMC-XIV) in 2007, and the Young Scientists' Prize from the Minister of Education, Culture, Sports, Science and Technology in 2011, the Young Scientist Award at the 38th International Symposium on Compound Semiconductors (ISCS2011) in 2011, the Best paper Award at the International Workshop on Nitride Semiconductors (IWN2012) in 2012. He is a member of the Japan Society of Applied Physics (JSAP).
Norio Kumada was born in Gifu, Japan in 1975. He received his B.S., M.S., and Ph.D. degrees in physics from Tohoku University, Japan, in 1998, 2000, and 2003, respectively. In 2003, he joined NTT Basic Research Laboratories, Kanagawa, Japan. Since then, he has been engaged in the study of highly correlated electronic states realized in semiconductor heterostructures or in graphene. He received Young Scientist Award of the Physical Society of Japan in 2008 and Young Scientistsf Prize from the Minister of Education, Culture, Sports, Science and Technology in 2012. He is a member of the Physical Society of Japan.
Katsuhiko Nishiguchi was born in Hiroshima, Japan in 1975. He received the B.E., M.E., and Ph.D. in electrical engineering in 1998, 2000, and 2002, respectively, from Tokyo Institute of Technology, Tokyo, Japan. Since joining NTT Basic Research Laboratories in 2002, he has been engaged in the research on physics and technology of Si nanometer-scale devices for LSI applications with low power consumption and new functions. He was an invited researcher at the National Center for Scientific Research (CNRS), France during September 2008 and a visiting scientist at Delft University of Technology, the Netherlands during 2012-2013. He received IUPAP Young Author Best Paper Award at the International Conference on Physics of Semiconductors 2000, Graduate Student Award Silver at the Materials Research Society 2000 Fall Meeting, and Young Scientist Award at the Japan Society of Applied Physics Spring Meeting in 2000. He is a member of the Japan Society of Applied Physics.
Shiro Saito was born in Tokyo, Japan in 1972. He received his B.S., M.S., and Dr. Eng. degrees in applied physics from the University of Tokyo, Japan, in 1995, 1997, and 2000, respectively. In 2000, he joined NTT Basic Research Laboratories. Since then, he has been engaged in quantum information processing using superconducting circuits. He was a guest researcher at Delft University of Technology, Delft, the Netherlands during 2005-2006. He has been a guest associate professor in Tokyo University of Science since 2012. He received Young Scientist Award at the Japan Society of Applied Physics Spring Meeting in 2004. He is a member of the Physical Society of Japan and the Japan Society of Applied Physics.