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Progress in heterostructuring for high speed, power, and light
--- "State-of-the-art Devices using Group-III Nitride Semiconductors" ---
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| Dr. Toshiki Makimoto |
Group-III nitrides, such as GaN, AlN and InN, cover
a wide range of bandgap energies from 6 eV to less than 1 eV, and therefore,
these materials are expected to be used in broad areas.
For example, compared with conventional transistors
made of Si, GaAs, and InP, heterostructure field effect transistors (HFETs)
and heterojunction bipolar transistors (HBTs) made of GaN and AlGaN will
show higher power characteristics, which will be useful for wireless communication
at a higher frequency range and power electronics at a lower frequency
range.
Examples of devices used in power electronics are
AC-DC and DC-DC converter circuits for home electric appliances. Light
emitting diodes (LEDs) made of GaN and AlGaN will emit short-wavelength
light, which will be useful for lighting, sterilization and so on. On the
other hand, when GaN and InGaN are used for optical devices, they will
be candidates for full colour LED displays and quantum-well laser diodes
(LDs) for optical fiber communications with higher performance.
In this lecture, I will first talk about the characteristics
of these group-III nitride semiconductors and their heterostructures. Then,
I will discuss the potentials of electronic and optical devices using these
materials and their heterostructures, compared with devices using conventional
semiconductor materials such as Si, GaAs, and InP.
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