Participants List

 

 

 

Tatsushi@Akazaki

NTT Basic Research Laboratories, Japan

Hiroyuki Akinaga

NRI-AIST, Japan

Boris L. Altshuler

Princeton, USA

Mohammad  Amin

D-Wave Systems Inc., Canada

Alexander F. Andreev

Kapitza Institute, Russia

Yasuhiro Asano

Hokkaido University, Japan

Yusuke@Asari

Waseda University, Japan

Dmitri V. Averin

Stony Brook University, SUNY, USA

Steven W.D. Bailey

Lancaster University, UK

Antonio Barone

University of Napoli FedericoU, Italy

Gerrit E.W. Bauer

Delft University of Technology, The Netherlands

Christopher Bauerle

CRTBT-CNRS, France

Carlo  Beenakker

Leiden University, The Netherlands

Wolfgang@Belzig

Basel University, Switzerland

Sebastian@Bergeret

Ruhr-University Bochum, Germany

Rogier@Boogaard

Delft University of Technology, The Netherlands

Arne@Brataas

Harvard University, USA

Christoph@Bruder

Basel University, Switzerland

ChiiDong Chen

Academia Sinica, Taiwan

Bong-Ryoul@Choi

Basel University, Switzerland

Tord@Claeson

Chalmers University of Technology, Physics, Sweden

John Clarke

University of California, USA

Valentin@Dediu

ISM,CNR, Italy

Hiroyuki@Deguchi

Kyushu Institute of Technology, Japan

Per Delsing

Chalmers University of Technology, Sweden

Hiromichi@Ebisawa

Tohoku University, Japan

Yoshihisa@Enomoto

Nagoya Institute of Technology, Japan

Mikio Eto

Keio University, Japan

Giuseppe Falci

Catania University, Italy

Kenichi@Fujii

Osaka University, Japan

Shigeru@Fukunaga

The Carlyle Group, Japan

Akira@Furusaki

Kyoto University, Japan

Zafer  Gedik

Bilkent University, Turkey

Avik@Ghosh

Purdue University , USA

Francesco@Giazotto

NEST-INFM and Scuola Normale Superiore, Italy

Leonid I. Glazman

University of Minnesota, USA

Alexander@Golubov

University of Twente, The Netherlands

Dirk@Grundler

University of Hamburg, Germany

Yoko Hada

Keio University, Japan

Jorn  Bindslev@Hansen

Technical University of Denmark, Denmark

Yuichi@Harada

NTT Basic Research Laboratories, Japan

C.J.P.M. Harmans

Delft University of Technology, The Netherlands

Katsushi@Hashimoto

NTT Basic Research Laboratories, Japan

Noriyuki@Hatakenaka

NTT Basic Research Laboratories, Japan

David@Haviland

Royal Institute of Technology, Sweden

Detlef @Heitmann

University of Hamburg, Germany

Jens@Herfort

Paul Drude Institute for Solid State Electronics, Germany

Seiji@Higashitani

Hiroshima University, Japan

Takashi Hirai

Nagoya University, Japan

Motonari  Honda

University of Tokyo, Japan

Can-Ming Hu

University of Hamburg, Germany

Katsuya Inagaki

National Institute of Advanced Industrial Science and Technology(AIST), Japan

Kazuyuki Inagaki

Tokyo University of Agriculture & Technology, Japan

Takayuki@Ishibashi

Tokyo University of Agriculture & Technology, Japan

Chikara@Ishii

Science University of Tokyo, Japan

Toshifumi@Itakura

NTT Basic Research Laboratories, Japan

Hiroyoshi@Itoh

Nagoya University, Japan

Ane Jensen

University of Copenhagen, Denmark

Kenji Kamide

Waseda University, Japan

Kazuhiro@Kanai

Waseda University, Japan

Rina Kanamoto

Tokyo Institute of Technology, Japan

Ikuzo@Kanazawa

Tokyo Gakugei University, Japan

Kicheon Kang

Electronics and Telecommunications Research Institute, Korea

Satoshi@Kashiwaya

NRI of AIST & CREST of JST, Japan

Masahiko@Kasuga

Waseda University, Japan

Minoru Kawamura

NTT Basic Research Laboratories, Japan

Paul@Kelly

University of Twente, The Netherlands

Takashi@Kimura

NTT Basic Research Laboratories, Japan

Takaaki Koga

PREST-JST& NTT Basic Research Laboratories, Japan, Japan

Makoto@Kohda

Tohoku University, Japan

Kimitoshi@Kono

Riken, Japan

Oliver@Kronenwerth

University of Hamburg, Germany

Igor O. Kulik

Bilkent University, Turkey

Watson Kuo

National Tsing Hua University, Taiwan

Koichi@Kusakabe

Niigata Universiy, Japan

Colin J. Lambert

Lancaster University, UK

Hyun-Woo@Lee

Korea Institute for Advanced Study, Korea

Poul@Lindelof

Niels Bohr Institute, University of Copenhagen, Denmark

Tomoki@Machida

University of Tokyo, Japan

Takashi@Manago

Joint Research Center for Atom Technology, Japan

Thierry@Martin

Mediterranee University, France

Toru@Matsuura

Hokkaido University, Japan

Frank erik Meijer

Delft University of Technology, The Netherlands

Takaaki@Mukai

NTT Basic Research Laboratories, Japan

Hiroo Munekata

Kanagawa Academy of Science & Technology/Tokyo Institute of Technology

Masakazu@Muraguchi

Waseda University, Japan

Katsuhiko@Nagai

Hiroshima University, Japan

Yasushi@Nagato

Hiroshima University, Japan

Yoshiko@Nakamura

Science University of Tokyo, Japan

Hayato@Nakano

NTT Basic Research Laboratories, Japan

Branislav@Nikolic

Georgetown University, USA

Munehiro@Nishida

Waseda University, Japan

Junsaku@Nitta

NTT Basic Research Laboratories, Japan

Takao@Ochiai

Center for New Materials,JAIST, Japan

Akira@Oguri

Osaka City University, Japan

Hideo@Ohno

Tohoku University, Japan

Shingo Ohtsuka

Waseda University, Japan

Akira@Oiwa

Tokyo Institute of Technology, Japan

Hideki@Oki

National Institute of Advanced Industrial Science and Technology(AIST), Japan

Bernard Pannetier

CNRS, France

Magnus@Paulsson

Purdue University , USA

Victor T. Petrashov

University of London, UK

Vadim@Puller

Stevens Institute of Technology, USA

Emmanuel@Rashba

MIT, USA

Kazuo Sano

Waseda University, Japan

Satoshi@Sasaki

NTT Basic Research Laboratories, Japan

Yukinori Sato

Tohoku University, Japan

Thomas@Schaepers

Forschungszentrum Julich, Germany

Moshe Schechter

Hebrew University, Israel

Robert J. Schoelkopf

Yale University, USA

Yoshiaki@Sekine

NTT Basic Research Laboratories, Japan

Kouichi@Semba

NTT Basic Research Laboratories, Japan

Sergiy@Shevchenko

National Academy of Sciences of Ukraine, Ukraine

Hiroshi@Shimada

University of Tokyo, Japan

Yoshihiro@Shimazu

Yokohama National University, Japan

Yun-Sok Shin

Pohang University of Science and Technology, Korea

Shoso@Shingubara

Hiroshima University, Japan

Shota@Shirai

Nagoya University, Japan

Masafumi@Shirai

Osaka University, Japan

Alexander Shnirman

Karlsruhe University, Germany

Benjamin Skrzynski

Ruhr-University Bochum, Germany

Takeru@Suzuki

Tohoku University, Japan

Fabio@Taddei

ISI Foundation, Italy

Shunji@Takei

Waseda University, Japan

Atsushi@Tackeuchi

Waseda University, Japan

Hiroyuki@Tamura

NTT Basic Research Laboratories, Japan

Yukio@Tanaka

Nagoya University, Japan

Hirotaka@Tanaka

NTT Basic Research Laboratories, Japan

Satoshi@Tanda

Hokkaido University, Japan

Seigo Tarucha

University of Tokyo, Japan

Yoshikazu Terai

National Institute for Materials Science, Japan

Hiroaki@Terashima

Tokyo Institute of Technology, Japan

Yasuhiro@Tokura

NTT Basic Research Laboratories, Japan

Jaw Shen Tsai

NEC, Japan

Kotaro@Tsubaki

NTT Basic Research Laboratories, Japan

Shunji Tsuchiya

Waseda University, Japan

Taku@Tsuneta

Hokkaido University, Japan

Masahito@Ueda

Tokyo Institute of Technology, Japan

Shinya@Uji

National Institute for Materials Science, Japan

Masayoshi Umeno

Chubu University, Japan

Yasuhiro@Utsumi

Tohoku University, Japan

Bart van Wees

Groningen University, The Netherlands

Ad@Verbruggen

Delft University of Technology, The Netherlands

Dieter Weiss

Regensburg University, Germany

Wilfred@van der Wiel

Delft University of Technology, The Netherlands

Laurens@W. van Beveren

Delft University of Technology, The Netherlands

Taro@Yakabe

National Institute for Materials Science, Japan

Syoji@Yamada

Center for New Materials,JAIST, Japan

Hiroshi@Yamaguchi

NTT Basic Research Laboratories, Japan

Yujiro@Yanai

Waseda University, Japan

Kanji@Yoh

Hokkaido University, Japan

Nobuhiko@Yokoshi

Waseda University, Japan

Kohtaro Yonemitsu

Tokyo University of Agriculture & Technology, Japan

Nobukatsu@Yoshida

Toyota Physical and Chemical Research Institute, Japan

Masakazu@Yoshitake

Center for New Materials,JAIST, Japan

Alexandre Zagoskin

D-Wave Systems Inc., Canada

Malek Zareyan

Institute for Advanced Studies in Basic Sciences, Iran