Participants List

Tatsushi　Akazaki	NTT Basic Research Laboratories, Japan
Hiroyuki Akinaga	NRI-AIST, Japan
Boris L. Altshuler	Princeton, USA
Mohammad Amin	D-Wave Systems Inc., Canada
Alexander F. Andreev	Kapitza Institute, Russia
Yasuhiro Asano	Hokkaido University, Japan
Yusuke　Asari	Waseda University, Japan
Dmitri V. Averin	Stony Brook University, SUNY, USA
Steven W.D. Bailey	Lancaster University, UK
Antonio Barone	University of Napoli Federico�U, Italy
Gerrit E.W. Bauer	Delft University of Technology, The Netherlands
Christopher Bauerle	CRTBT-CNRS, France
Carlo Beenakker	Leiden University, The Netherlands
Wolfgang　Belzig	Basel University, Switzerland
Sebastian　Bergeret	Ruhr-University Bochum, Germany
Rogier　Boogaard	Delft University of Technology, The Netherlands
Arne　Brataas	Harvard University, USA
Christoph　Bruder	Basel University, Switzerland
ChiiDong Chen	Academia Sinica, Taiwan
Bong-Ryoul　Choi	Basel University, Switzerland
Tord　Claeson	Chalmers University of Technology, Physics, Sweden
John Clarke	University of California, USA
Valentin　Dediu	ISM,CNR, Italy
Hiroyuki　Deguchi	Kyushu Institute of Technology, Japan
Per Delsing	Chalmers University of Technology, Sweden
Hiromichi　Ebisawa	Tohoku University, Japan
Yoshihisa　Enomoto	Nagoya Institute of Technology, Japan
Mikio Eto	Keio University, Japan
Giuseppe Falci	Catania University, Italy
Kenichi　Fujii	Osaka University, Japan
Shigeru　Fukunaga	The Carlyle Group, Japan
Akira　Furusaki	Kyoto University, Japan
Zafer Gedik	Bilkent University, Turkey
Avik　Ghosh	Purdue University , USA
Francesco　Giazotto	NEST-INFM and Scuola Normale Superiore, Italy
Leonid I. Glazman	University of Minnesota, USA
Alexander　Golubov	University of Twente, The Netherlands
Dirk　Grundler	University of Hamburg, Germany
Yoko Hada	Keio University, Japan
Jorn Bindslev　Hansen	Technical University of Denmark, Denmark
Yuichi　Harada	NTT Basic Research Laboratories, Japan
C.J.P.M. Harmans	Delft University of Technology, The Netherlands
Katsushi　Hashimoto	NTT Basic Research Laboratories, Japan
Noriyuki　Hatakenaka	NTT Basic Research Laboratories, Japan
David　Haviland	Royal Institute of Technology, Sweden
Detlef 　Heitmann	University of Hamburg, Germany
Jens　Herfort	Paul Drude Institute for Solid State Electronics, Germany
Seiji　Higashitani	Hiroshima University, Japan
Takashi Hirai	Nagoya University, Japan
Motonari Honda	University of Tokyo, Japan
Can-Ming Hu	University of Hamburg, Germany
Katsuya Inagaki	National Institute of Advanced Industrial Science and Technology(AIST), Japan
Kazuyuki Inagaki	Tokyo University of Agriculture & Technology, Japan
Takayuki　Ishibashi	Tokyo University of Agriculture & Technology, Japan
Chikara　Ishii	Science University of Tokyo, Japan
Toshifumi　Itakura	NTT Basic Research Laboratories, Japan
Hiroyoshi　Itoh	Nagoya University, Japan
Ane Jensen	University of Copenhagen, Denmark
Kenji Kamide	Waseda University, Japan
Kazuhiro　Kanai	Waseda University, Japan
Rina Kanamoto	Tokyo Institute of Technology, Japan
Ikuzo　Kanazawa	Tokyo Gakugei University, Japan
Kicheon Kang	Electronics and Telecommunications Research Institute, Korea
Satoshi　Kashiwaya	NRI of AIST & CREST of JST, Japan
Masahiko　Kasuga	Waseda University, Japan
Minoru Kawamura	NTT Basic Research Laboratories, Japan
Paul　Kelly	University of Twente, The Netherlands
Takashi　Kimura	NTT Basic Research Laboratories, Japan
Takaaki Koga	PREST-JST& NTT Basic Research Laboratories, Japan, Japan
Makoto　Kohda	Tohoku University, Japan
Kimitoshi　Kono	Riken, Japan
Oliver　Kronenwerth	University of Hamburg, Germany
Igor O. Kulik	Bilkent University, Turkey
Watson Kuo	National Tsing Hua University, Taiwan
Koichi　Kusakabe	Niigata Universiy, Japan
Colin J. Lambert	Lancaster University, UK
Hyun-Woo　Lee	Korea Institute for Advanced Study, Korea
Poul　Lindelof	Niels Bohr Institute, University of Copenhagen, Denmark
Tomoki　Machida	University of Tokyo, Japan
Takashi　Manago	Joint Research Center for Atom Technology, Japan
Thierry　Martin	Mediterranee University, France
Toru　Matsuura	Hokkaido University, Japan
Frank erik Meijer	Delft University of Technology, The Netherlands
Takaaki　Mukai	NTT Basic Research Laboratories, Japan
Hiroo Munekata	Kanagawa Academy of Science & Technology/Tokyo Institute of Technology
Masakazu　Muraguchi	Waseda University, Japan
Katsuhiko　Nagai	Hiroshima University, Japan
Yasushi　Nagato	Hiroshima University, Japan
Yoshiko　Nakamura	Science University of Tokyo, Japan
Hayato　Nakano	NTT Basic Research Laboratories, Japan
Branislav　Nikolic	Georgetown University, USA
Munehiro　Nishida	Waseda University, Japan
Junsaku　Nitta	NTT Basic Research Laboratories, Japan
Takao　Ochiai	Center for New Materials,JAIST, Japan
Akira　Oguri	Osaka City University, Japan
Hideo　Ohno	Tohoku University, Japan
Shingo Ohtsuka	Waseda University, Japan
Akira　Oiwa	Tokyo Institute of Technology, Japan
Hideki　Oki	National Institute of Advanced Industrial Science and Technology(AIST), Japan
Bernard Pannetier	CNRS, France
Magnus　Paulsson	Purdue University , USA
Victor T. Petrashov	University of London, UK
Vadim　Puller	Stevens Institute of Technology, USA
Emmanuel　Rashba	MIT, USA
Kazuo Sano	Waseda University, Japan
Satoshi　Sasaki	NTT Basic Research Laboratories, Japan
Yukinori Sato	Tohoku University, Japan
Thomas　Schaepers	Forschungszentrum Julich, Germany
Moshe Schechter	Hebrew University, Israel
Robert J. Schoelkopf	Yale University, USA
Yoshiaki　Sekine	NTT Basic Research Laboratories, Japan
Kouichi　Semba	NTT Basic Research Laboratories, Japan
Sergiy　Shevchenko	National Academy of Sciences of Ukraine, Ukraine
Hiroshi　Shimada	University of Tokyo, Japan
Yoshihiro　Shimazu	Yokohama National University, Japan
Yun-Sok Shin	Pohang University of Science and Technology, Korea
Shoso　Shingubara	Hiroshima University, Japan
Shota　Shirai	Nagoya University, Japan
Masafumi　Shirai	Osaka University, Japan
Alexander Shnirman	Karlsruhe University, Germany
Benjamin Skrzynski	Ruhr-University Bochum, Germany
Takeru　Suzuki	Tohoku University, Japan
Fabio　Taddei	ISI Foundation, Italy
Shunji　Takei	Waseda University, Japan
Atsushi　Tackeuchi	Waseda University, Japan
Hiroyuki　Tamura	NTT Basic Research Laboratories, Japan
Yukio　Tanaka	Nagoya University, Japan
Hirotaka　Tanaka	NTT Basic Research Laboratories, Japan
Satoshi　Tanda	Hokkaido University, Japan
Seigo Tarucha	University of Tokyo, Japan
Yoshikazu Terai	National Institute for Materials Science, Japan
Hiroaki　Terashima	Tokyo Institute of Technology, Japan
Yasuhiro　Tokura	NTT Basic Research Laboratories, Japan
Jaw Shen Tsai	NEC, Japan
Kotaro　Tsubaki	NTT Basic Research Laboratories, Japan
Shunji Tsuchiya	Waseda University, Japan
Taku　Tsuneta	Hokkaido University, Japan
Masahito　Ueda	Tokyo Institute of Technology, Japan
Shinya　Uji	National Institute for Materials Science, Japan
Masayoshi Umeno	Chubu University, Japan
Yasuhiro　Utsumi	Tohoku University, Japan
Bart van Wees	Groningen University, The Netherlands
Ad　Verbruggen	Delft University of Technology, The Netherlands
Dieter Weiss	Regensburg University, Germany
Wilfred　van der Wiel	Delft University of Technology, The Netherlands
Laurens　W. van Beveren	Delft University of Technology, The Netherlands
Taro　Yakabe	National Institute for Materials Science, Japan
Syoji　Yamada	Center for New Materials,JAIST, Japan
Hiroshi　Yamaguchi	NTT Basic Research Laboratories, Japan
Yujiro　Yanai	Waseda University, Japan
Kanji　Yoh	Hokkaido University, Japan
Nobuhiko　Yokoshi	Waseda University, Japan
Kohtaro Yonemitsu	Tokyo University of Agriculture & Technology, Japan
Nobukatsu　Yoshida	Toyota Physical and Chemical Research Institute, Japan
Masakazu　Yoshitake	Center for New Materials,JAIST, Japan
Alexandre Zagoskin	D-Wave Systems Inc., Canada
Malek Zareyan	Institute for Advanced Studies in Basic Sciences, Iran