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MBEチャンバー付き低温走査トンネル顕微鏡 (STM) を用いて半導体表面, ヘテロ構造中に形成されたナノ構造における電子・正孔状態を研究しています. また, 半導体表面における単原子操作を行っています.
Figure: InAs表面に並べられたIn吸着原子による''NTT''のSTM像
[Appl. Phys. Express 4, 085002 (2011)].

主な成果
  • 半導体における原子操作
    • Reconfigurable Quantum-Dot Molecules Created by Atom Manipulation
      Yi Pan, Jianshu Yang, Steven C. Erwin, Kiyoshi Kanisawa, and Stefan Folsch
      Phys. Rev. Lett. 115, 076803 (2015).

    • Quantum dots with single-atom precision
      Stefan Folsch, Jesus Martinez-Blanco, Jianshu Yang, Kiyoshi Kanisawa, and Steven C. Erwin
      Nature Nanotech. 9, 505 (2014).

    • Assembling Indium Atoms into Nanostructures on a Cleaved InAs(110) Surface
      Kyoichi Suzuki, Stefan Folsch, and Kiyoshi Kanisawa
      Appl. Phys. Express 4, 085002 (2011).

    • Atom-By-Atom Quantum State Control in Adatom Chains on a Semiconductor
      S. Folsch, J. Yang, C. Nacci, and K. Kanisawa
      Phys. Rev. Lett. 103, 096104 (2009).

  • InAs表面ナノ構造におけるゼロ次元電子状態
    • Stable reconstruction and adsorbates of InAs(111)A surface
      A. Taguchi, and K. Kanisawa
      Appl. Surf. Sci. 252, 5263 (2006).

    • Imaging of Friedel oscillation patterns of two-dimensionally accumulated electrons at epitaxially grown InAs(111)A surfaces
      K. Kanisawa, M. J. Butcher, H. Yamaguchi, and Y. Hirayama
      Phys. Rev. Lett. 86, 3384 (2001).

    • Local density of states in zero-dimensional semiconductor structures
      K. Kanisawa, M. J. Butcher, Y. Tokura, H. Yamaguchi, and Y. Hirayama
      Phys. Rev. Lett. 87, 196804 (2001).

  • InAs/GaSb超格子中の電子状態
    • Spatial Imaging of Two-Dimensional Electron States in Semiconductor Quantum Wells
      K. Suzuki, K. Kanisawa, C. Janer, S. Perraud, K. Takashina, T. Fujisawa, and Y. Hirayama
      Phys. Rev. Lett. 98, 136802 (2007).

    • Imaging of interference between incident and reflected electron waves at an InAs/GaSb heterointerface by low-temperature scanning tunneling spectroscopy
      K. Suzuki, K. Kanisawa, S. Perraud, M. Ueki, K. Takashina, and Y. Hirayama
      Jpn. J. Appl. Phys. 46, 2618 (2007) [30th JJAP PAPER AWARD]

  • InGaAs/InAlAs表面量子井戸における電子状態
    • Direct Measurement of the Binding Energy and Bohr Radius of a Single Hydrogenic Defect in a Semiconductor Quantum Well
      S. Perraud, K. Kanisawa, Zhao-Zhong Wang, and T. Fujisawa
      Phys. Rev. Lett. 100, 016801 (2008).

    • Imaging the percolation of localized states in a multisubband two-dimensional electronic system subject to a disorder potential
      S. Perraud, K. Kanisawa, Zhao-Zhong Wang, and T. Fujisawa
      Phys. Rev. B 76, 195333 (2007).

    • Unpinning of the Fermi level at (111)A clean surfaces of epitaxially grown n-type In0.53Ga0.47As
      S. Perraud, K. Kanisawa, Zhao-Zhong Wang, and Y. Hirayama
      Appl. Phys. Lett. 89, 192110 (2006).

3-1 Morinosato-Wakamiya, Atugi, Kanagawa 243-0198, Japan
Qauntum Solid State Physics Research Group
Physical Science Labortory
NTT Basic Research Laboratories
NTT