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Welcome to Nanodevices Research Group Home Page

Target of Research
At our Nanodevices Research Group, the development of silicon-based single-electron devices is being undertaken. Our group is now focusing on how to create more complicated functions using a simpler device structure and how to establish a fabrication process suitable for extremely-large-scale integration of single-electron devices. To provide a guiding principle for the experimental work, theoretical studies on electron transport and thermal oxidation of Si nanostructures are also carried out.

Recent topics
Selected recent activities are shown here from the abstracts submitted recently to international conferences. More detailed ones can be seen in the home page of each member.

Si Single-Electron Transistors
Mechanism of Thermal Oxidation of Si
Silicon Nanostructure Oxidation
Atomic-based Nanodevice Design
Room-temperature single-electron transfer and detection using silicon nanodevices

Organization
Our group is part of the NTT Basic Research Laboratories, which is involved in Nippon Telegraph and Telephone corporation.

 

 

 

 
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