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Publications in 2004

 
M. Uematsu, H. Kageshima, Y. Takahashi, S. Fukatsu, K. M. Itoh, K. Shiraishi, and U. Gosele
"Modeling of Si self-diffusion in SiO2: Effect of the Si/SiO2 interface including time-dependent diffusivity"
Appl. Phys. Lett. 84, 876-878 (2004) [abstract]
M. Uematsu, H. Kageshima, K. Shiraishi, M. Nagase, S. Horiguchi, and Y. Takahashi
"Two-Dimensional Simulation of Pattern-Dependent Oxidation of Silicon Nanostructures on SOI substrates"
Solid State Electron. 48, 1073-1078 (2004) [abstract]
M. Uematsu, H. Kageshima, Y. Takahashi, S. Fukatsu, K. M. Itoh, and K. Shiraishi
"Correlated diffusion of silicon and boron in thermally grown SiO2"
Appl. Phys. Lett. 85, 221-223 (2004) [abstract]
S. Fukatsu, K. M. Itoh, M. Uematsu, H. Kageshima, Y. Takahashi, and K. Shiraishi
"Effect of Si/SiO2 interface on silicon and boron diffusion in thermally grown SiO2"
Jpn. J. Appl. Phys.(Part 1) 43, 7837-7842 (2004) [abstract]
M. Uematsu, H. Kageshima, Y. Takahashi, S. Fukatsu, K. M. Itoh, and K. Shiraishi
"Simulation of correlated diffusion of Si and B in thermally grown SiO2"
J. Appl. Phys. 96, 5513-5519 (2004) [abstract]
H. Kageshima, M. Uematsu, K. Akagi, S. Tsuneyuki, T. Akiyama, and K. Shiraishi
"Theoretical study of excess Si emitted from Si-oxide/Si interfaces"

Jpn. J. Appl. Phys.(Part 1) 43, 8223-8226 (2004)
[abstract]
N. M. Zimmerman, E. Hourdakis, Y. Ono, A. Fujiwara, and Y. Takahashi
"Error mechanisms and rates in tunable-barrier single-electron turnstiles and charge-coupled devices"

J. Appl. Phys. Vol. 96, No. 9, November 5254-5266 (2004)
[abstract]
K. Nishiguchi, H. Inokawa, Y. Ono, A. Fujiwara, and Y. Takahashi
"Multilfunctional Boolean logic using single-electron transistors"

IEICE Trans. Electrons. Vol. E87-C, No. 11, November 1809-1817 (2004)
[abstract]
S.- J Kim, Y. Ono, Y. Takahashi, and J. B. Choi
"Real-time observation of single-electron movement through silicon single-electron transistor"

Jpn. J. Appl. Phys. Vol. 43, No. 10, October 6863-6867 (2004)
[abstract]
Y. Takahashi, Y. Ono, A. Fujiwara, and H. Inokawa
"Silicon single-electron devices"

NTT Technical Review, Vol. 2, No. 2, Feburary 21-27 (2004)
A. Fujiwara, N. M. Zimmerman, Y. Ono, and Y. Takahashi
"Current Quantization due to single-electron transfer in Si-wire charge coupled devices"

Appl. Phys. Letts. Vol. 84, No. 8, Feburary 1323-1325 (2004)
[abstract]
K. Nishiguchi, H. Inokawa, Y. Ono, A. Fujiwara, and Y. Takahashi
"Multilevel memory using single-electron turnstile"
Electronics Letters Vol. 44, No. 4, February 229-230 (2004) [abstract]
K. Nishiguchi, H. Inokawa, Y. Ono, A. Fujiwara, and Y. Takahashi
"Automatic Control of Oscillation Phase of a Single-Electron Transistor"
Electron Devices Letters Vol. 25, No. 1, January 31-33 (2004) [abstract]
Tomonori Ito, Kazumi Tsutsumida, Kohji Nakamura, Yoshihiro Kangawa, Kenji Shiraishi, Akihito Taguchi and Hiroyuki Kageshima
"Systematic theoretical investigations of adsorption behavior on the GaAs(001)-c(4x4) surfaces"
Appl. Surf. Sci. 237, 194-199 (2004) [abstract]
Toru Akiyama, Hiroyuki Kageshima, and Tomonori Ito
"First-principles Analyses of O2 Molecules around Ultrathin SiO2/Si(100) Interface"
Jpn. J. Appl. Phys. 43, 7903-7908 (2004) [abstract]
K. Nishiguchi, H. Inokawa, Y. Ono, A. Fujiwara, and Y. Takahashi
"Multilevel memory using an electrically formed single-electron box"
Appl. Phys. Lett., vol. 85, pp. 1277-1279 (2004).Picked up in August 23, 2004 issue of Virtual Journal of Nanoscale Science & Technology [abstract]
H. Inokawa, Y. Takahashi, K. Degawa, T. Aoki, T. Higuchi
"A simulation methodology for single-electron multiple-valued logics and its application to a latched parallel counter"
IEICE Trans. Electron. Vol. E87C No. 11 pp. 1818-1826 NOV (2004) [abstract]
K. Degawa, T. Aoki, T. Higuchi, H. Inokawa, Y. Takahashi
"A single-electron-transistor logic gate family for binary, multiple-valued and mixed-mode logic"
IEICE Trans. Electron. Vol. E87C No. 11 pp. 1827-1836 NOV (2004) [abstract]
H. Inokawa, Y. Takahashi
"Simultaneous-sweep method for evaluation of single-electron transistors with barriers induced by gate electric field"
Jpn. J. Appl. Phys. Vol. 43 No. 8B pp. L1048 -L1050 AUG 15 (2004) [abstract]
S. Horiguchi, A. Fujiwara, H. Inokawa, Y. Takahashi
"Analysis of back-gate voltage dependence of threshold voltage of thin silicon-on-insulator metal-oxide-semiconductor field-effect transistor and its application to Si single-electron transistor"
Jpn. J. Appl. Phys. Vol. 43 No. 4B pp. 2036-2040 APR (2004) [abstract]

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