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Publications in 2005

M. Uematsu
"Unified Simulation of Diffusion in Silicon and Silicon Dioxide"

Defect and Diffusion Forum 237-240, 38-49 (2005) [abstract]
M. Uematsu
"Self-diffusion and impurity diffusion in silicon dioxide"

J. Phase Equilibria and Diffusion, 26, 547-554 (2005) [abstract]
M. Uematsu, H. Kageshima, and K. Shiraishi
"Effect of Nitrogen on Diffusion in Silicon Oxynitride"

Jpn. J. Appl. Phys. (Part 1) 44, 7756-7759 (2005)
T. Akiyama, H. Kageshima, M. Uematsu, and T. Ito
"Theoretical Investigation of Oxygen Diffusion in Compressively Strained High-Density α-Quartz"

Jpn. J. Appl. Phys.(Part 1) 44, 7427-7429 (2005)
K. Nishiguchi, O. Crauste, H. Namatsu, S. Horiguchi, Y. Ono, A. Fujiwara, Y. Takahashi, and H. Inokawa
"Back-gate effect on Coulomb blockade in silicon-on-insulator trench wires"

Jpn. J. Appl. Phys. Vol. 44, No. 10, October 7717-7719 (2005)
A. Vijayaraghavan, K. Kanzaki, S. Suzuki, Y. Kobayashi, H. Inokawa, Y. Ono, S. Kar, and P.M.Ajayan
"Metal-semiconductor transition in single-wall carbon nanotubes induced by low energy electron irradiation"
Nano. Letts. Vol. 5, No. 8, August 1585-1589 (2005) [abstract]
Z. A. Burhanudin, R. Nuryadi, Y. Ishikawa, M. Tabe, and Y. Ono
"Thermally induced formation of Si wire array on an ultrathin (111) silicon-on-insulator substrate"

Appl. Phys. Letts. Vol. 87, No. 12, September 121905 (2005) [abstract]
Y. Ono, A. Fujiwara, Y. Takahashi, and H. Inokawa
"Silicon single-electron pump and turnstile; Interplay with crystalline imperfections"
MRS Symposium Proceedings, Vol. 864, E.6.7.1, (2005)"Defects in Devices", W. G. En, E. C. Jones, J.C. Strum, M, J. Chan, S. Tiwari, and M. Hirose, Eds., (Materials Research Society, Warrendale)
Y. Ono, K. Nishiguchi, H. Inokawa, S. Horiguchi, and Y. Takahashi
"Charge-State Control of Phosphorus Donors in a Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistor"

Jpn. J. Appl. Phys. Vol. 44, No. 4B, April 2588-2591 (2005) [abstract]
Toru Akiyama and Hiroyuki Kageshima
"Reaction mechanisms of oxygen at SiO2/Si(100) interfaces"

Surf. Sci. Lett. 576, L65-L70 (2005) [abstract]
Akihito Taguchi, Hiroyuki Kageshima and Kazumi Wada
"First-principles investigations of nitrogen-doping effects on defect aggregation processes in Czochralski Si"

J. Appl. Phys. 97, 053514-1-5 (2005)
Masayuki Tsuda, Hajime Arai, Masaya Takahashi, Hideaki Ohtsuka, Yoji Sakurai, Koji Sumitomo and Hiroyuki Kageshima
"Electrode performance of layered LiNi0.5Ti0.5O2 prepared by ion exchange"

J. Power Sources 144, 183-190 (2005)
Nicolas Clement, Hiroshi Inokawa
"Foundry Metal-Oxide-Semiconductor Field-Effect-Transistor Electrometer for Single-Electron Detection"

Jpn. J. Appl. Phys. Vol. 44 No. 7A pp. 4855-4858 JUL (2005)







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