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Publications in 2007

K. Nishiguchi, Y. Ono, A. Fujiwara, H. Yamaguchi, H. Inokawa, and Y. Takahashi
"Infrared detection with silicon nano field-effect transistors"
Appl. Phys. Lett., vol. 90, p. 223108 (2007) [abstract]
K. Nishiguchi, A. Fujiwara, Y. Ono, H. Inokawa, and Y. Takahashi
"Long retention of gain-cell dynamic random-access memory with undoped memory node"
IEEE Electron Device Lett. vol. 28, pp. 48-50 (2007) [abstract]
W. Zhang, K. Nishiguchi, Y. Ono, A. Fujiwara, H. Yamaguchi, H. Inokawa, Y. Takahashi, and N. J. Wu
"Transfer and detection of single electrons using metal-oxide-semiconductor field-effect transistors"
IEICE Trans. Electron., vol. E90-C, 943-948 (2007) [abstract]
K. Takashina, M. Brun, T. Ota, D. K. Maude, A. Fujiwara, Y. Ono, Y. Takahashi,and Y. Hirayama
"Anomalous resistance ridges along filling factor V = 4i"
Phys. Rev. Lett. 99, 036803 (2007) [abstract]
Jean-Francois Morizur, Yukinori Ono, Hiroyuki Kageshima, Hiroshi Inokawa, and Hiroshi Yamaguchi
"Impact of space-energy correlation on variable range hopping in a transistor"
Phys. Rev. Lett. 98, 166601 (2007) [abstract]
Hiroyuki Kageshima, Masashi Uematsu, Toru Akiyama, and Tomonori Ito
"Microscopic Mechanism of Silicon Oxidation Process"
Transaction of Electrochemical Society 6, 449 (2007)
M. A. H. Khalafalla, Y. Ono, K. Nishiguchi, and A. Fujiwara
"Identification of Single and Coupled Acceptors in Silicon Nano Field-Effect Transistors"
Appl. Phys. Lett. vol. 91, No. 26, 263513_1-263513_3 (2007) [abstract]
D. Mororu, Y. Ono, H. Inokawa, H. Ikeda, and M. tabe
"Quantized electron transfer through random multiple tunnel junctions in Phosphorous-doped silicon nanowires"
Phys. Rev. Vol. B76, No. 7, 075332_1-075332_5 (2007) [abstract]
K. Takashina, B. Gaillaed, Y. Ono, and Y. Hirayama
"Low-Temperature Characteristics of Ambipolar SiO2/Si/SiO2 Hall-Bar Devices"
Jpn. J. Appl. Phys. Vol. 46, No. 4B, 2596-2598 (2007) [abstract]
T. Goto, H. Inokawa, M. Nagase, Y. Ono, K. Sumitomo, and K. Torimitsu
"Effect of UV/Ozone Treatment on Nanogap Electrodes for Molecular Devices"
Jpn. J. Appl. Phys. Vol. 46, No. 4A, 1731-1733 (2007) [abstract]
Y. Ono, K. Nishiguchi, A. Fujiwara, H. Yamagcuhi, H. Inokawa, and Y. Takahashi
"Conductance modulation by individual acceptors in si nanoscale field-effect transistors"
Appl. Phys. Lett. Vol. 90, No. 10, 102106_1-102106_3 (2007) [abstract]
K. Kanzaki, S. Suzuki, H. Inokawa, Y. Ono, A. Vijayaraghavan, and Y. Kobayashi
"Mechanism of metal-semiconductor transition in electric properties of singl-walled carbon nanotubes induced by low-energy electron irradiation"
J. Appl. Phys. Vol. 101, No. 3, 034317_1-034317_4 (2007) [abstract]
N. M. Zimmerman, B. J. Simonds, A. Fujiwara, Y. Ono, Y. Takahashi, and H. Inokawa
"Charge offset stability in tunable-barrier Si single-electron tunnel devices"
Appl. Phys. Lett. Vol. 90, No. 3, 033507_1-033507_3 (2007) [abstract]


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