de1de2de3de4de5

 
line decor
 
line decor
 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 
 
 
 

Publications in 2008

 
A. Fujiwara, K. Nishiguchi, and Y. Ono
"Nanoampere charge pump by single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistor"
Appl. Phys. Lett. 92, 042102 (2008) [abstract]
Y. Ono, A. Fujiwara, K. Nishiguchi, Y. Takahashi, and H. Inokawa
"Silicon single-charge transfer devices"
J. Phys. Chem. Solids Vol. 69, No. 2-3, 702-707 (2008) [abstract]
K. Nishiguchi, C. Koechlin, Y. Ono, A. Fujiwara, H. Inokawa, and H. Yamaguchi
"Single-Electron-Resolution Electrometer Based on Field-Effect Transistor"
Jpn. J. Appl. Phys., vol. 47, pp. 8305-8310 (2008)[abstract]
K. Nishiguchi, M. Nagase, T. Yamaguchi, A. Fujiwara, and H. Yamaguchi
"Low-energy electron emission from an electron inversion layer of a Si/SiO2/Si cathode for nano-decomposition"
Jpn. J. Appl. Phys., vol. 47, pp. 5106-5108 (2008) [abstract]
K. Nishiguchi, Y. Ono, A. Fujiwara, H. Inokawa, and Y. Takahashi
"Stochastic data processing circuit based on single electrons using nanoscale field-effect transistors"
Appl. Phys. Lett., vol. 92, p. 062105 (2008) [abstract]
H. W. Liu, T. Fujisawa, Y. Ono, H. Inokawa, A. Fujiwara, K. Takashina, and Y. Hirayama
"Pauli-spin-blockade transport through a silicon double quantum dot"
Phy. Rev. B 77, 073310 (2008) [abstract]
H. W. Liu, T. Fujisawa, H. Inokawa, Y. Ono, A. Fujiwara, and Y. Hirayama
"A gate-defined silicon quantum dot molecule"
Appl. Phys. Lett. 92, 222104 (2008) [abstract]
N. M. Z immerman, W. H. Huber, B. Simonds, E. Hourdakis, A. Fujiwara, Y.Ono, Y. Takahashi, H. Inokawa, M. Furlan, and M. W. Keller
"Why the long-term charge offset drift in Si single-electron tunneling transistors is much smaller (better) than in metal-based ones: Two-level fluctuator stability"

Journal of Applied Physics vol. 104, 033710 (2008) [abstract]
S. Miyamoto, K. Nishiguchi, Y. Ono, K M. Itoh, and A. Fujiwara
"Escape dyna
mic s of a few electrons in a single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistor"
Appl. Phys. Lett. 93, 222103 (2008)
[abstract]
S. Yabuuchi, H. Kageshima, Y.  Ono, M. Nagase, A. Fujiwara, and E. Ohta
"First-principles study on origin of ferromagnetism of MnSi1.7 nanoparticles in Si"

Phys. Rev. Vol. B78, No.4, 045307_1 - 045307_7 July (2008)
[abstract]
Y. Ono, M. Khalafalla, K. Nishiguchi, K. Takashina, A. Fujiwara, S. Horiguchi, H. Inokawa, Y. Takahashi
"Invited paper Charge transport in boron-doped nano MOSFETs: Towards single-dopant electronics"

Appl. Sur. Science, Vol. 254, No.19, 6252 _ 6256 July (2008)
[abstract]
S. Yabuuchi, Y. Ono, H. Kageshima, M. Nagase, A. Fujiwara, E. Ohta
"Ferromagnetism of manganese-silicide nanopariticles in Silicon"

Jpn. J. Appl. Phys. Vol. 47, No. 6, 4487 - 4450 June (2008)
[abstract]
Shin Yabuuchi, Hiroyuki Kageshima, and Eiji Ohta
"First-principles study on uniaxial strain effects
  on manganese in silicon"
Jpn. J. Appl. Phys. 47, 26-30 (2008) [abstract]
Hiroki Hibino, Hiroyuki Kageshima, Fumihiko Maeda, Masao Nagase, Yoshihiro Kobayashi, and Hiroshi Yamaguchi
"Microscopic thickness determinat
ion of thin  graphite films formed on SiC from quantized oscillation in reflectivity of low-energy electrons"
Phys. Rev. B 77, 075413-1-7 (2008) [abstract]
Toru Akiyama, Tomonori Ito, Hiroyuki Kageshima, and Masashi Uematsu
"Impact of oxidation-induced strain on micros
 copic processes related to oxidation reaction at the SiO2/Si(100) interface"
Phys. Rev. B 77, 115356-1-5 (2008) [abstract]
Masao Nagase, Hiroki Hibino, Hiroyuki Kageshima, and Hiroshi Yamaguchi
"Local conductance measurement of few-layer graphene on SiC sbustrate using an integrated nanogap probe"
J. Phys. Conf. Ser. 100, 052006 (2008) [abstract]
Makoto Kasu, Kenji Ueda, Hiroy uki Kageshima, and Yoshiharu Yamauchi
"Gate Interfacial Layer in Hydrogen-Terminated Diamond Field-Effect Transistor"
Diamond Related Materials 17, 741-744 (2008) [abstract]
Hiroki Hibino, Hiroyuki Kageshim a, Fuminiko Maeda, Masao Nagase, Yasuyuki Kobayashi, Yoshihiro Kobayashi, and Hiroshi Yamaguchi
"Thickness Determination of Graphene Layers Formed on SiC Using Low-Energy Electron Microscopy"
e-J. Surf. Sci. Nanotech. 6, 107-110 (2008) & Technology [abstract]
Hiroki Hibino, Hiroyuki Kage shima, F.-Z. Guo, Fumihiko Maeda, Masato Kotsugi, and Yoshio Watanabe
"Two-dimensional emission patterns of secondary electrons from graphene layers formed on SiC(0001)"
Appl. Surf. Sci. 254, 7596-7599 (2008) [abstract]
Makoto Kasu, K enji Ueda, Hiroyuki Kageshima, and Yoshiharu Yamauchi
"RF equivalent-circuit analysis of p-type diamond field-effect transistors with hydrogen surface termination"
IEICE Trans. Electronics E91C, 1042-1049 (2008) [abstract]
Hiroki Hibino, Hiroyuki Kageshima, and Makio Uwaha
"Instability of steps during Ga deposition
on Si(111)" 
Surf. Sci. 602, 2421–2426 (2008) [abstract]
Toru Akiyama, Tomonori Ito, Hiroyuki Kageshima, and Masashi Uematsu
"Stress dependence of oxi
dation rea ction at SiO2/Si interfaces during silicon thermal oxidation"
Jpn. J. Appl. Phys. 47, 7089-7093 (2008) [abstract]
Hiroyuki Kageshima and Akira Fujiwara
"First-principles study on inver
sio n layer properties of double-gate atomically thin silicon channels"
Appl. Phys. Lett. 93, 043516-1-3 (2008) [abstract]
Satoru Ohno, Yojiro Oba, Shin Yabu uchi, Tetsuya Sato and Hiroyuki Kageshima
"Magnetism of single-walled carbon nanotube with Pd nanowire"
J. Phys. Soc. Japan 77, 104713- (2008) [abstract]
Masao Nagase, Hiroki Hibino, H iroyuki Kageshima, and Hiroshi Yamaguchi
"In-plane conductance measurement of graphene nanoisland using integrated nanogap probe"
Nanotechnologies 19, 495701-1-6 (2008) [abstract]

 

 

 

 

 

Copyright (c) 2008, NTT Basic Research Laboratories. Privacy Policy