de1de2de3de4de5

 
line decor
 
line decor
 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 
 
 
 

Publications in 2009

 
K. Nishiguchi, N. Clement, T. Yamaguchi, and A. Fujiwara
"Si nanowire ion-sensitive field-effect transistors with a shared floating gate"
Appl. Phys. Lett., vol. 94, p. 163106 (2009) [abstract]
K. Nishiguchi and A. Fujiwara
"Single-electron counting statistics and its circuit application in nanoscale field-effect transistors at room temperature"
Nanotechnology, vol. 20, p. 175201 (2009) [abstract]
Hiroki Hibino, Hiroyuki Kageshima, Masato Kotsugi, Fumihiko Maeda, F.-Z. Guo, and Yoshio Watanabe
"Dependence of electronic properties of epitaxial few-layer graphene on the number of layers investigated by photoelectron emission microscopy"
Phys. Rev. B 79, 125437-1-7 (2009) [abstract]
Hiroyuki Kageshima, Hiroki Hibino, Masao Nagase and Hiroshi Yamaguchi
"Theoretical Study of Epitaxial Graphene Growth on SiC(0001) Surfaces"
Appl. Phys. Exp. 2, 065502-1-3 (2009) [abstract]
Michal Kubovic, Makoto Kasu, Yoshiharu Yamauchi, Kenji Ueda, and Hiroyuki Kageshima
"Structural and Electrical Properties of hydrogen-terminated Diamond Field-effect Transistor"
Diamond Related Materials 81, 796-799 (2009) [abstract]
Hiroo Omi, Hiroyuki Kageshima, Tomoaki Kawamura, Masashi Uematsu, Yoshihiro Kobayashi, Seiji Fujikawa, Yoshoyuki Tsusaka, Yasushi Kagoshima, and Junji Matsui
"Stability-instability transition of reaction fronts in thermal silicon oxidation"
Phys. Rev. B 79, 245319-1-6 (2009) [abstract]
Hiroki Hibino, Seigi Mizuno, Hiroyuki Kageshima, Masao Nagase, and Hiroshi Yamaguchi
"Stacking domains of epitaxial few-layer graphene on SiC(0001)"
Phys. Rev. B 80, 085406-1-6 (2009) [abstract]
Masao Nagase, Hiroki Hibino, Hiroyuki Kagashima, and Hiroshi Yamaguchi
"Local Conductance Measurements of Double-layer Graphene on SiC substrate"
Nanotechnol. 20, 445704-1-6 (2009) [abstract]
Hiroyuki Kageshima and Makoto Kasu
"Origin of Schottky Barrier Modification by Hydrogen on Diamond"
Jpn. J. Appl. Phys. 48, 111602 (2009) [abstract]
M. A. H. Khalafalla, Y. Ono, K. Nishiguchi, and A. Fujiwara
"Horizontal position analysis of single acceptors in Si nanoscale field-effect transistors"
Appl. Phys. Lett., Vol. 94, No. 22, April (2009) 223501_1 – 223501_3 [abstract]
K. Takashina, K. Nishiguchi, Y. Ono, A. Fujiwara, T. Fujisawa, Y. Hirayama and K. Muraki
"Electrons and holes in a 40nm thick silicon slab at cryogenic temperatures"
Appl. Phys. Lett., Vol. 94, No. 14, April (2009) 142104_1 - 142104_3 [abstract]
M. Jo, T. Kaizawa, M. Arita, A. Fujiwara, K. Yamazaki, Y. Ono, H. Inokawa, Y. Takahashi, and J.-B. Choi
"Si nanodot array device with multiple gates"
Material Science in Semiconductor Processing, Vol. 11, No. *, April-June (2009) 58 - 69 [abstract]
T. Kaizawa, M. Jo, M. Arita, A. Fujiwara, K. Yamazaki, Y. Ono, H. Inokawa, Y. Takahashi, and J.-B. Choi
"Full adder operation based on Si nanodot array device with multiple inputs and outputs"
IEEE Trans. Nanotechnology, Vol. 8, No. 4, July (2009) 535- 541 [abstract]
T. Kaizawa, M. Jo, M. Arita, A. Fujiwara, K. Yamazaki, Y. Ono, H. Inokawa, Y. Takahashi, and J.-B. Choi
"Full adder operation based on Si nanodot array device with multiple inputs and outputs"
International Journal of Nanotechnology and Molecular Computation, Vol. 1, No. 2, April-June (2009) 58 - 69 [abstract]

 

 

 

 

 

Copyright (c) 2008, NTT Basic Research Laboratories. Privacy Policy