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Publications in 2010

 
Satoru Miyamoto, Katsuhiko Nishiguchi, Yukinori Ono, Kohei M. Itoh, and Akira Fujiwara
"Resonant escape over an oscillating barrier in a single-electron ratchet transfer"
Physical Review B 82, 033303 (2010) [abstract]
Jinichiro Noborisaka, Katsuhiko Nishiguchi, Hiroyuki Kageshima, Yukinori Ono, and Akira Fujiwara
"Tunneling spectroscopy of electron subbands in thin silicon-on-insulator metal-oxide-semiconductor field-effect transistors"
Appl. Phys. Lett. 96, 112102-1-3 (2010) [abstract]
N. Clément, K. Nishiguchi, A. Fujiwara and D. Vuillaume
"One-by-one trap activation in silicon nanowire transistors"
Nature Communications 1 (2010) [abstract]
K. Takashina, M. Nagase, K. Nishiguchi, Y. Ono, H. Omi, A. Fujiwara, T. Fujisawa, and K. Muraki
"Separately contacted monocrystalline silicon double-layer structure with an amorphous silicon dioxide barrier made by wafer bonding"
Semiconductor Science and Technology 25, 125001 (2010) [abstract]
Hiroyuki Kageshima and Akira Fujiwara
"Dielectric constants of atomically thin silicon channels with double gate"
Appl. Phys. Lett. 96, 193102-1-3 (2010) [abstract]
T. Shinada, M. Hori, Y. Ono, K. Taira, A. Komatsubara, T. Tanii, T. Endoh, and I. Ohdomari
"Performance evaluation of MOSFETs with discrete dopant distribution by one-by-one doping method"
Proc. SPIE Vol. 7637, April (2010) 763711_1 – 763711_7 (2010) [abstract]
M. Tabe, D. Moraru, M. Ligowski, M. Anwar, R. Jablonski, Y. Ono, and T. Mizuno
"Single-electron transport through single dopants in a dopant-rich environment"
Phys. Rev. Lett. Vol. 105, No. 1, April (2010) 016803_1 - 016803_4 (2010) [abstract]
M. Jo, T. Kaizawa, M. Arita, A. Fujiwara, Y. Ono, K. Nishiguchi, H. Inokawa, Y. Takahashi, and J.-B. Choi
"Fabrication of double-dot single-electron transistor in silicon nanowire"
Thin Solid Films, Vol. 518, No. 6S1, January (2010) S186–S189 [abstract]
Hiroyuki Kageshima, Hiroki Hibino, and Masao Nagase
"Epitaxial Graphene Growth Studied by Low-energy Electron Microscopy and First-principles"
Materials Science Forum 645-648, 597-602 (2010) [abstract]
Michal Kubovic, Makoto Kasu, Hiroyuki Kageshima, and Fumihiko Maeda
"Sorption properties of NO2 gas and its strong influence on hole concentration of H-terminated diamond surfaces"
Appl. Phys. Lett. 96, 052101-1-3 (2010) [abstract]
Masao Nagase, Hiroki Hibino, Hiroyuki Kageshima, and Hiroshi Yamaguchi
"Contact conductance measurement of partially suspended graphene on SiC"
Appl. Phys. Exp. 3, 045101-1-3 (2010) [abstract]
I. Mahboob, E. Flurin, K. Nishiguchi, A. Fujiwara, and H. Yamaguchi
"Enhanced force sensitivity and noise squeezing in an electromechanical resonator coupled to a nanotransistor"
Appl. Phys. Lett., vol. 97, p. 253105 (2010) [abstract]
Shinichi Tanabe, Yoshiaki Sekine, Hiroyuki Kageshima, Masao Nagase, and Hiroki Hibino
"Half-integer quantum Hall effect in gate-controlled epitaxial graphene devices"
Appl. Phys. Exp. 3, 075102-1-3 (2010) [abstract]
Hiroki Hibino, Hiroyuki Kageshima, and Masao Nagase
"Epitaxial few-layer graphene: toward single crystal growth"
J. Phys. D: Appl. Phys. 43, 374005-1-14 (2010) [abstract]
Michal Kubovic, Makoto Kasu, Hiroyuki Kageshima, and Fumihiko Maeda
"Electronic and surface properties of H-terminated diamond surface affected by NO2 gas"
Diamond Related Materials 19, 889-893 (2010) [abstract]
Hiroyuki Kageshima
"Study of Thermoelectric Properties of Graphene"
Jpn. J. Appl. Phys. 49, 100207-1-3 (2010) [abstract]
Hiroyuki Kageshima, Hiroki Hibino, Masao Nagase, Yoshiaki Sekine, and Hiroshi Yamaguchi
"Atomic Structure and Physical Properties of Epitaxial Graphene Islands embedded in SiC(0001) Surfaces"
Appl. Phys. Express 3, 115103-1-3 (2010) [abstract]

 

 

 

 

 

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