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Publications in 2011

J. Noborisaka, K. Nishiguchi, Y. Ono, H. Kageshima, and A. Fujiwara
" Strong Stark effect in electroluminescence from phosphorous-doped silicon-on-insulator metal-oxide-semiconductor field-effect transistors"
Appl. Phys. Lett. 98, 033503 (2011) [abstract]
K. Nishiguchi, Y. Ono and A. Fujiwara
"Single-electron counting statistics of shot noise in nanowire Si metal-oxide-semiconductor field-effect transistor"
Appl. Phys. Lett. 98, 193502 (2011) [abstract]
Gento Yamahata, Katsuhiko Nishiguchi, and Akira Fujiwara
"Accuracy evaluation of single-electron shuttle transfer in Si nanowire metal-oxide-semiconductor field-effect transistors"
Appl. Phys. Lett. 98, 222104 (2011) [abstract]
K. Nishiguchi and A. Fujiwara
"Single-Electron Stochastic Resonance Using Si Nanowire Transistors"
Jpn. J. Appl. Phys. 50, 06GF04 (2011) [abstract]
Y. Ono, Y. Miyazaki, S. Yabuuchi, H. Kageshima, M. Nagase, A. Fujiwara, and E. Ohta
"Significance of the interface regarding magnetic properties of manganese nanosilicide in silicon"
Thin Solid Films 519 8505-8508 (2011) [abstract]
H. Kageshima, H. Hibino, H. Yamaguchi, and M. Nagase
"Theoretical Study on Epitaxial Graphene Growth by Si Sublimation from SiC(0001) Surface "
Jpn. J. Appl. Phys. 50, 095601-1-6 (2011) [abstract]
M. A. H. Khalafalla, Y. Ono, J. Noborisaka, G. P. Lansbergen, and A. Fujiwara
"Carrier transport in indium-doped p-channel silicon-on-insulator transistors between 30 and 285 K "
J. Appl. Phys. 110 014512 (2011) [abstract]
N. Clément, K. Nishiguchi, J. F. Dufreche, D. Guerin, A. Fujiwara, and D. Vuillaume
"A silicon nanowire ion-sensitive field-effect transistor with elementary charge sensitivity"
Appl. Phys. Lett., vol. 98, p. 014104 (2011) [abstract]
S. Tanabe, Y. Sekine, H. Kageshima, M. Nagase, and H. Hibino
"Carrier transport mechanism of graphene on SiC(0001)"
Phys. Rev. B 84, 115458-1-5 (2011) [abstract]
K. Takashina, Y. Niida, V. T. Renard, A. Fujiwara, T. Fujisawa, K. Muraki, and Y.Hirayama
"Impact of Valley Polarization on the Resistivity in Two Dimensions"
Phys. Rev. Lett. 106, 196403 (2011) [abstract]
Y. Takahashi, M.Jo, T.Kaizawa, Y. Kato, M.Arita, A.Fujiwara, Y.Ono, Hi.Inokawa, and J.-B.Choi
" Si Nanodot Device Fabricated by Thermal Oxidation and Their Applications"
Key Engineering Materials 479 pp.175-183 (2011) [abstract]
I. Mahboob, E. Flurin, K. Nishiguchi, A. Fujiwara, and H. Yamaguchi
"Interconnect-free parallel logic circuits in a single mechanical resonator"
Nature Communications, v. 2, (2011) [abstract]
Masato Inoue, Yoshihiro Kangawa, Katsunori Wakabayashi, Hiroyuki Kageshima, and Koichi Kakimoto
"Tight-binding approach to initial stage of graphitization process on vicinal SiC surface"
Jpn. J. Appl. Phys. 50, 038003-1-2 (2011) [abstract]
Shinichi Tanabe, Yoshiaki Sekine, Hiroyuki Kageshima, Masao Nagase, and Hiroki Hibino
"Observation of bandgap in epitaxial bilayer graphene field effect transistors"
Jpn. J. Appl. Phys. 50, 04DN04-1-4 (2011) [abstract]
N. Clement, K. Nishiguchi, A. Fujiwara, and D. Vuillaume
"Evaluation of a Gate Capacitance in the Sub-aF Range for a Chemical Field-Effect Transistor With a Si Nanowire Channel"
IEEE Trans. Nanotechnology 10, 1172 (2011) [abstract]
N. Clement, G. Patriarche, K. Smaali, F. Vaurette, K. Nishiguchi, D. Troadec, A. Fujiwara, D. Vuillaume
"Large Array of Sub-10-nm Single-Grain Au Nanodots for use in Nanotechnology"
Small Volume 7, Issue 18, pages 2607–2613, September 19, (2011) [abstract]
I. Mahboob, Q. Wilmart, K. Nishiguchi, A. Fujiwara, and H. Yamaguchi
"Wide-band idler generation in a GaAs electromechanical resonator"
Phys. Rev. B, 84, 113411 (2011) [abstract]
H. Sumikura, K. Nishiguchi, Y. Ono, A. Fujiwara, and M. Notomi
"Bound exciton photoluminescence from ion-implanted phosphorus in thin silicon layers"
Optics Express 19, No. 25, pp. 25255-25262 (2011) [abstract]
T. Goto, H. Inokawa, Y. Ono, A. Fujiwara and K. Torimitsu
"Electrical Characterization of Terphenyl-Based Molecular Devices "
Jpn. J. Appl. Phys. 50 pp. 071603-071603-6 (2011) [abstract]






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