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Sub-10-nm Patterning using Alumina-Gel Resists

To achieve a high resolution and high overlay accuracy, we are developing new electron beam lithography systems. By using the system and an alumina-gel resist, we have already realized 8-nm-wide lines.

References

K. Yamazaki, M. S. M. Saifullah, H. Namatsu, and K. Kurihara, ''Sub-10-nm Lithography with Sub-10-nm Overlay Accuracy, '' Proc. SPIE. 3997, (2000) in printing.

M. S. M. Saifullah, H. Namatsu, T. Yamaguchi, K. Yamazaki, and K. Kurihara, ''Spin-coatable Al2O3 resists in electron beam nanolithography,'' Proc. SPIE. 3678, pp. 633--642, 1999.

M. S. M. Saifullah, H. Namatsu, T. Yamaguchi, K. Yamazaki, and K. Kurihara, ''Effect of chelating agents on high resolution electron beam nanolithography of spin-coatable Al2O3 gel films,'' Jpn. J. Appl. Phys. 38, pp. 7052--7058, 1999.

K. Yamazaki, A. Fujiwara, Y. Takahashi, H. Namatsu, and K. Kurihara, ''Sub-10-nm overlay accuracy in electron beam lithoraphy for nanometer-scale device fabraication,'' Jpn. J. Appl. Phys. 37, pp. 6778--6791, 1998.

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