3 MBE growth chambers (e-gun based with EIES)
1 MBE growth chambers (boat based with AAS)
2 Sputtering chamber (multi-targets)
1 surface analysis chamber (XPS, UPS, Auger, EELS)
1 Angle-Resolved PhotoEmission Spectroscopy (SES-2002 analyzer) chamber with low-temperature sample stage (connected to ABL-6B)
(Two of the MBE chambers are connected in vacuoto the surface analysis chamber)Films are grown by reactive coevaporation from metal sources with the assistance of O3 or RF activated O*. The evaporation beam flux of each element is controlled by a feedback system using Electron Impact Emission Spectrometry (EIES) or Atomic Absorption Spectrometry (AAS). With the aid of RHEED observation during film growth, the rate for each element can be adjusted reproducibly to the stoichiometry with an accuracy of better than 1%. "In situ low-temperature STS" and "in situ ARPES" are proceeding.Standard 4 probe resistivity measurement system, SQUID, XRD, tunnel spectroscopy measurement system, optical property measurement system, Rs (surface resistance) measurement system, Wafer Jc measurement system, etc.are available.