Goal
Fabrication of ultra-fine structures beyond
the limit of conventional lithography by
controlling atomic processes on surfaces
will lead to significant breakthrough in
the future semiconductor technology. For
application to the microelectronics industry,
it is very important to achieve integration
of the atomically controlled structures on
the whole surface of a wafer. However, current
atom-controlling techniques, such as atom
manipulation by STM, can fabricate structures
only on very limited area of a micron scale
and do not satisfy this requirement. Therefore,
these would not become a key technology in
the future industry.
In our research group, we aim to contribute
to the future key technology of Si integration
on the basis of fundamental understanding
of atomic and molecular processes on Si surfaces.
Our primary goal is to establish a new concept
of nanostructure fabrications by surface
structure and reaction controls, or self-organization.
The most important feature of this approach
is to organize atomically controlled nanostructures
to the scale of a full wafer.