Publication List(2000)

  1. Yoshikazu Homma, Hiroki Hibino, Y. Kunii and Toshio Ogino,
    "Transformation of surface structures on vicinal Si(111) during heating",
    Surf. Sci. 445, 327-334 (2000).

  2. Yoshikazu Homma, Paul Finnie and Toshio Ogino,
    "Control of island formation on silicon surfaces using ultra-high-vacuum scanning electron microscopy",
    J. Electron Microscopy 49, 225-229 (2000).

  3. Yoshikazu Homma and N. Aizawa,
    "Electric-current-induced Step Bunching on Si(111)",
    Phys. Rev. B 62, 8323-8329 (2000).

  4. Kuniyil Prabhakaran, Fumihiko Maeda, Yoshio Watanabe and Toshio Ogino,
    "Distinctly different thermal decomposition pathway of ultrathin oxide layer on Ge and Si",
    Appl. Phys. Lett.76, 2244-2246 (2000).

  5. Kuniyil Prabhakaran, Fumihiko Maeda, Yoshio Watanabe and Toshio Ogino,
    "Thermal decomposition pathway of Ge and Si oxides: observation of a distinct difference",
    Thin Solid Films 369, 289-292 (2000).

  6. Kuniyil Prabhakaran, Koji Sumitomo and Toshio Ogino,
    "Nano-interface engineering of Co/Ge/Si systems: metal incorporation into Ge quantum dots and SiO2/Si structures",
    Appl. Surf. Sci.159-160, 492-497(2000).

  7. Koji Sumitomo, Hiroki Hibino, Yoshikazu Homma and Toshio Ogino,
    "Observation of incomplete surface melting of Si using medium-energy ion scattering spectroscopy",
    Jpn. J. Appl. Phys. 39, 4421-4424 (2000).

  8. Koji Sumitomo, Kenji Shiraishi, Yoshihiro Kobayashi, Tomonori Ito and Toshio Ogino,
    "Surface segregation and interdiffusion of Ge on Si(001) studied by medium-energy ion scattering",
    Thin Solid Films 369,112-115 (2000).

  9. H. Kudo, N. Nakamura, K. Shibuya, K. Narumi, S. Yamamoto, H. Naramoto, Koji Sumitomo, and S. Seki,
    "Ion-induced electron emission from Si crystal targets covered with noncrystalline Si layers",
    Nucl. Instr. & Meth. B168, 181 (2000).

  10. H. Kudo, S. Seki, Koji Sumitomo, K. Narumi, S. Yamamoto, and H. Naramoto,
    "Ion-induced electron measurements using crystal targets overlaid with noncrystalline layers",
    Nucl. Instr. & Meth. B164-165, 897 (2000).

  11. Hiroki Hibino, Tomoaki Kawamura and Toshio Ogino,
    "TRHEED analysis of twinned homoepitaxial layers grown on Si(111) sqrt(3)xsqrt(3)-B",
    Thin Solid Films 369, 5-9 (2000).

  12. J. B. Hannon, Hiroki Hibino, N. C. Bartelt, B. S. Swartzentruber, Toshio Ogino and G. L. Kellogg,
    "Dynamic of the silicon (111) surface phase transition",
    Nature 405, 552-554 (2000).

  13. Hiroo Omi and Toshio Ogino,
    "Positioning of self-assembling Ge islands on Si(111) mesas by using atomic steps",
    Thin Solid Films 369, 88-91 (2000).

  14. Paul Finnie and Yoshikazu Homma,
    "The Motion of Atomic Steps on Ultra-Flat Si(111): Constructive Collisions",
    J. Vac. Sci. Technol A18, 1941-1945 (2000).

  15. Paul Finnie and Yoshikazu Homma,
    "Stability-Instability Transitions in Silicon Crystal Growth",
    Phys. Rev. Let. 85, 3237-3240 (2000).

  16. Paul Finnie and Yoshikazu Homma,
    "Nucleation and Step Flow on Ultra-flat Silicon",
    Phys. Rev. B62, 8313-8317 (2000).

  17. Yoshio Watanabe and Fumihiko Maeda,
    "Effect of strain on the chemical bonds in InAs nanocrystals self-organized on GaAs and Se-terminated GaAs surfaces",
    Appl. Surf. Sci. 162-163, 625-629 (2000).

  18. Tomoaki Kawamura, Yoshio Watanabe, Yuichi Utsumi, K. Uwai, J. Matsui, Y. Kagoshima, Y. Tsusaka and S. Fujikawa,
    "Reconstruction of an InP(001) surface grown by metalorganic vapor phase epitaxy in atmospheric hydrogen environment",
    Appl. Phys. Lett. 77, 996-998 (2000).

  19. Fumihiko Maeda, M. Sugiyama and Yoshio Watanabe,
    "In-induced surface reconstruction on GaSb(001)",
    Phys. Rev. B62, 1625-1618 (2000).

  20. Fumihiko Maeda, M. Sugiyama and Yoshio Watanabe,
    "GaSb(001) 4x2-In surface structure studied by core-level photoelectron spectroscopy and x-ray standing-wave analysis",
    Jpn. J. Appl. Phys. 39, 4351-4354 (2000).

  21. Fumihiko Maeda and Yoshio Watanabe,
    "Real-time analysis of alternating growth on GaAs(001) by core-level photoelectron spectroscopy",
    Appl. Surf. Sci. 162-163, 319-325 (2000).

  22. Satoru Suzuki, C. Bower, Yoshio Watanabe and O. Zhou,
    "Work function and valence band states of pristine and Cs-intercalated single-walled carbon nanotube bundle",
    Appl. Phys. Lett. 76, 4007-4010 (2000).

  23. Satoru Suzuki, T. Kiyokura, Fumihiko Maeda and Yoshio Watanabe,
    "Resonant photoemission spectroscopy of Ga 3d two-hole states of GaAs",
    J. Phys. Soc. Jpn. 69, 1807-1811 (2000).

  24. K. G. Nath, Fumihiko Maeda, Satoru Suzuki and Yoshio Watanabe,
    "Epitaxy, modification of electronic structures, overlayer-substrate reaction and segregation in Ferromagnetic Co films on Se-treated GaAs(001) surface",
    Jpn. J. Appl. Phys. 39, 4571-4574 (2000).

  25. F. Maeda, Y. Watanabe:
    "Real-time analysis of alternating growth on GaAs((001) by core-level photoelectron spectroscopy";
    Applied Surface Science 162-163 pp. 319-325 (2000).

  26. T.Kiyokura, F. Maeda, Y. Watanabe, Y. Iketaki, K. Nagai, Y. Horikawa, M. Oshima, E. Shigemasa, A. Yagishita:
    "Throughput Measurement of a Multilayer-Coated Schwarzschild Objective Using Synchrotron Radiation";
    OPTICAL REVIEW Vol. 7, No. 6 pp. 576-578 (2000).

  27. T. Kawamura, Y. Watanabe, Y. Utsumi, K. Uwai, J. Matsui, Y. Kagoshima, Y. Tsusaka, and S. Fujikawa,
    "In situ observation of superstructures on InP(001) surface under hydrogen atomospheric environment with using grazing incidence X-ray diffraction",
    Journal of Crystal Growth 221 pp. 106-110 (2000).

  28. Y. Watanabe, F. Maeda,
    "Effect of strain on the chemical bonds in InAs nanocrystals self-organized on GaAs and Se-terminated GaAs surfaces",
    Applied Surface Science 162-163 pp. 625-629 (2000).

  29. T. Kawamura, Y. Watanabe, Y. Utsumi, K. Uwai, J. Matsui, Y. Kagoshima, Y. Tsusaka, and S. Fujikawa,
    "Reconstruction of an InP(001) surface grown by metalorganic vapor phase epitaxy in atmospheric hydrogen environment",
    Appl. Phys. Lett. 77 pp.996-998 (2000).

  30. K. G. Nath, F. Maeda, S. Suzuki, and Y. Watanabe,
    "Epitaxy, modification of electronic structures, overlayer-substrate reaction and segregation in Ferromagnetic Co films on Se-treated GaAs(001) surface",
    Jpn. J. Appl. Phys. 39 pp.4571-4574 (2000).

  31. Prabhakaran, F. Maeda, Y. Watanabe, and T. Ogino,
    "Distinctly different thermal decomposition pathway of ultrathin oxide layer on Ge and Si",
    Appl. Phys. Lett. 76 pp.2244-2246 (2000).

  32. F. Maeda, M. Sugiyama, and Y. Watanabe,
    "GaSb(001) 4x2-In surface structure studied by core-level photoelectron spectroscopy and x-ray standing-wave analysis",
    Jpn. J. Appl. Phys. 39 pp.4351-4354 (2000).

  33. S. Suzuki, T. Kiyokura, F. Maeda, and Y. Watanabe,
    "Resonant photoemission spectroscopy of Ga 3d two-hole states of GaAs",
    J. Physical Society of Japan 69, pp.1807-1811 (2000).

  34. F. Maeda, M. Sugiyama, and Y. Watanabe,
    "In-induced surface reconstruction on GaSb(001)",
    Physical Review B62 pp.1625-1618 (2000).

  35. S. Suzuki, C. Bower, Y. Watanabe, and O. Zhou,
    "Work functiond and valence band states of pristine of pristine and Cs-intercalated single-walled carbon nanotube bundle",
    Appl. Phys. Lett. 76 pp.4007-4010 (2000).

  36. H. Hibino, and T. Ogino
    "Si twinning superlattice: growth of new single crystal Si".
    Surf. Rev. Lett. 7, 631 (2000).

  37. H. Hibino and T. Ogino,
    "Si twinning superlattice - growth of novel single crystal Si",
    Kotai-butsuri 35, 259 (2000), in Japanese.

  38. H. Hibino, Y. Homma and T. Ogino,
    "Self-organization of steps and domain boundaries of 7x7 reconstruction on Si(111)",
    Mat. Res. Soc. Symp. Proc. 584, 59 (2000).

  39. H. Hibino and T. Ogino,
    "Step bunching during SiGe growth on vicinal Si(111) surfaces",
    Mat. Res. Soc. Symp. Proc. 584, 77 (2000).

  40. H. Hibino, T. Kawamura, and T. Ogino,
    "RHEED analysis of twinned homoepitaxial layers grown on Si(111)R3xR3-B"
    Thin Solid Films 369, 5 (2000).

  41. C. W. Hu, H. Hibino, T. Ogino and I.. S. T. Tsong,
    "Hysteresis in the (1x1)-(7x7) first-order phase transition on the Si(111) surface",
    Surf. Sci. (2000).