Publication List 2002

  1. Y. Homma, Y. Kobayashi, T. Ogino, T. Yamashita,
    “Growth of suspended carbon nanotube networks on 100-nm-scale silicon pillars”,
    Appl. Phys. Lett. 81(2002)2261.

  2. K. G. Nath, F. Maeda, S. Suzuki, and Y. Watanabe, "Passivation-mediated
    growth of Co on Se, S and O rich GaAs surfaces: A potential approach to
    control interface crystallinity and magnetic continuity,"
    J. Appl. Phys.91 (2002) 3943-3945.

  3. S. Suzuki, Y. Watanabe, T. Kiyokura, K. G. Nath, T. Ogino, S. Heun, W.
    Zhu, C. Bower and O. Zhou, "Effects of air exposure and Cs depostion on
    the electronic structure of multiwalled carbon nanotubes”,
    Surf. Rev. Lett. 9 (2002) 431-435.

  4. S. Suzuki, Y. Watanabe, T. Ogino, S. Heun, L. Gregoratti, A. Barinov, B.
    Kaulich, M. Kiskinova, W. Zhu, C. Bower and O. Zhou, "Electronic
    structure of carbon nanotubes studied by photoelectron spectromicroscopy”,
    Phys. Rev. B 66 (2002) 035414-1-4.

  5. S. Suzuki, Y. Watanabe, T. Ogino, S. Heun, L. Gregoratti, A. Barinov, B.
    Kaulich, M. Kiskinova, W. Zhu, C. Bower and O. Zhou, "Extremely small
    diffusion constant of Cs in multiwalled carbon nanotubes”,
    J. Appl. Phys. 92 (2002) 7527-7531.

  6. T. Kawamura, Y. Watanabe, S. Fujikawa, K. Uchida, J. Matsui, Y. Kagoshima
    amd Y. Tsusaka; "Real-time observation of surface morphology of indium
    phosphide MOVPE growth with using x-ray reflectivity technique",
    Journal of Crystal Growth, 237-239 (2002), 398.

  7. H. Omi, D. J. Bottomley, Y. Homma, T. Ogino, S. Stoyanov, and V. Tonchev,
    “Shape of atomic steps on Si(111) under localized stress”
    Physical Review B 66, 085303- 1-5 (2002).

  8. H. Omi, D. J. Bottomley, and T. Ogino
    “Strain distribution control on the silicon wafer scale for advanced nanostructure fabrication”
    Applied Physics Letters 80, 1073 - 1075 (2002).

  9. D. J. Bottomley, H. Omi, Y. Kobayashi, M. Uematsu, H. Kageshima, and T. Ogino
    “Origin of self-assembled step and terrace formation at the Si(001)-SiO2 interface”
    Physical Review B 66, 035301- 1-5 (2002).

  10. T. Ogino, Y. Homma, Y. Kobayashi, H. Hibino, K. Prabhakaran, K. Sumitomo, H. Omi, S. Suzuki, T. Yamashita, D. J. Bottomley, F. Lin, and A. Kaneko,
    “Design of Si surface for self-assembled nanoarchitecture”
    Surface Science 514, 1 - 9 (2002).

  11. K. Sumitomo, H. Omi, Z. Zhang, and T. Ogino,
    “Anisotropical strain relaxation of Ge nanowires on Si(113) studied by medium-energy ion scattering”
    Physical Review B 67, 035319- 1-4 (2002).

  12. M. P. Halsall, H. Omi, and T. Ogino,
    “Optical properties of self-assembled Ge wires grown on Si(113)”
    Applied Physics Letters 81, 2448 - 2450 (2002).

  13. Z. Zhang, K. Sumitomo, H. Omi, T. Ogino, J. Nakamura, and A. Natori,
    “Atomic Structures of the Ge/Si(113)-(2x2) Surface”
    Physical Review Letters 88, 256101- 1-4 (2002).

  14. K. Sumitomo, Z. Zhang, H. Omi, D. J. Bottomley, and T. Ogino,
    “Proof of kinetic influence in Ge nanowire formation on Si(113)”
    Journal of Crystal Growth 237-239, 1904 - 1908 (2002).

  15. Z. Zhang, K. Sumitomo, H. Omi, and T. Ogino,
    “Influences of the Si(113) anisotropy on Ge nanowire formation and related island shape transition”
    Surface Science 497, 93 - 99 (2002).