Publication List   1983 to 1990 
 
 

          Surface Science

1. Y. Watanabe, M. Uneta, Y. Kadota and Y. Ohmachi: "Dislocation reduction of GaAs grown on Si by MOMBE using multiple indium atomic plane structures", J. of Electronic Materials 19 p.223 (1990).

2. M. Uneta, Y. Watanabe and Y. Ohmachi: "Dedorption of triethylgallium during metalorganic molecular beam epitaxial growth of GaAs", Appl.Phys. Lett. 54 p.2327 (1989).

3. Y. Watanabe, M. Uneta and Y. Ohmachi: "Growth of GaAs on Si substrates by metalorganic MBE using triethylgallium and arsenic", Jpn. J. Appl. Phys. 28 p.L727 (1989).

4. Y. Watanabe, Y. Kadota, H. Okamoto and Y. Ohmachi: "Depth-resolved cathodoluminescence in GaAs epilayers grown on Si substrates", Jpn. J. Appl. Phys. 28 p.85 (1989).

5. Y. Watanabe, Y. Kadota, H. Okamoto, M. Seki and Y. Ohmachi: "Structural properties of GaAs-on-Si with InGaAs/GaAs strained-layer superlattice", J. Cryst. Growth 93 p.459 (1988).

6. H. Okamoto, Y. Watanabe, Y. Kadota and Y. Ohmachi: "Dislocation reduction in GaAs on Si by thermal cycles and InGaAs/GaAs strained-layer super-lattices", Jpn. J. Appl. Phys. 26  p.L1950 (1987).

7.Y. Fukuda, Y. Watanabe and T. Jinno: "LSI surface charged phenomena under the elecronic beam test" , Research Practica Report, vol. 35, p.241 (1986), in Japanese.

8. Y. Watanabe and Y. Fukuda: "Analysis of voltage-contrast decay on passivated devices under electron beam probing", Scanning electron microscopy/1986/III (p943) SEM Inc., AMF O'Hare (Chicago).

9. Y. Kohama, Y. Watanabe and Y. Fukuda: "Electron-beam-induced current observation of misfit dislocations at Si1-xGex/Si interfaces", Jpn. J. Appl. Phys. 26 p.L1944 (1985).

10. Y. Watanabe, Y, Fukuda and T. Jinno: "Analysis of capacitive coupling voltage contrast in scanning electron microscopy", Jpn. J. Appl. Phys. 24 p.1294 (1985).

11. Y. Watanabe: "Threshold voltage instability of a static RAM under 77-K operation", IEEE　Trans. Vol. ED-31 p.1898 (1984).

12. Y. Watanabe, K. Kaizu and Y. Fukuda: "Measurement technique for threshold voltage of driver transistors in a static RAM"; Trans. IECE Japan, vol. J66-C p.560-567 (1983), in Japanese.

13. Y. Watanabe, K. Kaizu and Y. Fukuda: "Threshold-voltage instability of MOS transistors in an LSI memory under accelerated operating test condition at77 K", Trans. IECE Jpn. Vol. E66 p.397 (1983).