1. K. Sumitomo, T. Nishioka, N. Shimizu, Y. Shinoda, and T. Ogino, "Interface structure of Ge/Si(111) during solid-phase epitaxy studied by medium-energy ion scattering", J. Vac. Sci. Technol. A 13(2) (1995) 289.
2. K. Sumitomo, T. Nishioka, and T. Ogino, "Ge island formation on Si(111) in solid phase epitaxy studied by medium-energy ion scattering", J. Vac. Sci. Technol. B 13(2) (1995) 387.
3. H. Hibino, Y. Homma, and T. Ogino, "Real-space observation of (111) facet formation on vicinal Si(111) surfaces", Phys. Rev., B51 (1995) 7753.
4. K. Prabhakaran, and T. Ogino, "Characterization of termination layer of SiGe system through signatures of Si-O and Ge-O species", Journal of Crystal Growth 150 (1995) 1020.
5. Y. Hirota, and T. Ogino, "Exchanges between Si and Pb adatoms on Si(111)", Surf. Sci., 328 (1995) L547.
6. H. Hibino, T. Ogino, Y. Watanabe, and M. Oshima, "Thermal effects on GaAs(001) surface prepared by deoxygenated and de-ionized water treatment", J. Vac. Sci. Technol. A 13(3) (1995) 1676.
7. K. Prabhakaran, and T. Ogino, "Oxygen chemisorption as a tool for atom discrimination in the SiGe termination layer", Surf. Sci., 327 (1995) L511.
8. K. Prabhakaran, and T. Ogino, "Surface reaction on ultrathin films of Ge on Si surfaces", INCOVAST-95, International Conference on Vacuum Science & Technology 2 (1995) 302.
9. Y. Kobayashi, K. Prabhakaran, and T. Ogino, "Thermal clustering of very thin oxide formed on Si surfaces by N2O/O2 adsorption", Surf. Sci., 329 (1995) 167.
10. T. Ogino, H. Hibino, and Y. Homma, "Patterning-assisted control for ordered arrangement of atomic steps on Si(111) surfaces", Jpn. J. Appl. Phys. 34 (1995) L668.
11. H. Hibino and T. Ogino, "Reducing domain boundaries of surface reconstruction during molecular beam epitaxy on Si(111)", Appl. Phys. Lett., 67 (1995) 915.
12. K. Prabhakaran, K. Sumitomo, and T. Ogino, "Diffusion mediated chemical reaction on Co/Ge/Si(100) forming Ge/CoSi2/Si(100)", Appl. Phys. Lett., 68 (1995) 1241.
13. Y. Hirota and T. Fukuda, "Scattering tunneling microscopy study of GaAs(001) surface prepared by deoxygenated and de-ionized water treatment", Appl. Phys. Lett., 66 (1995) 2837.
14. Y. Homma, M. Suzuki, H. Hibino, and N. Aizawa, "Secondary electron imaging of (7~7) domains on Si(111) surfaces (in Japanese)", Hyomenkagaku, 16 (1995) 415.
15. T. Nishioka, "Medium-energy ion scattering spectrometry (in Japanese)", Radioisotopes 44, (1995) 349.
16. A. Yoshigoe, K. Mase, Y. Tsusaka, T. Urisu, Y. Kobayashi, and T. Ogino, "In situ observation of silicon hydrides on Si(100) surfaces during synchrotron-radiation-stimulated Si2H6 gas source molecular beam epitaxy", Appl. Phys. Lett., 67 (1995) 2364.
17. Homma, N. Aizawa, and T. Ogino; "Ultra-large-scale step-free terraces formed at the bottom of craters on vicinal Si(111) surfaces", Jpn. J. Appl. Phys. 35 (1996) L241.
18. N. Aizwa and Y. Homma, "Annealing Behavior of (7x7) Domain Boundaries on Si(111) Observed by Secondary Electron Imaging", Surf. Sci. 340 (1995) 101.
19. H. Yamaguchi, Y. Homma and Y. Horikoshi, "In-situ Observation of Phase Transition and Transition-Induced Step-Bunching on InAs (001) Surfaces"; Appl. Phys. Lett. 66 (1995) 1626.
20. Y. Homma, J. Osaka and N. Inoue, "In Situ Observation of Surface Morphology Evolution Corresponding to Reflection High Energy Electron Diffraction", Jpn. J. Appl. Phys. 34 (1995) L1187.
21. T. Kiyokura, F. Maeda, Y. Watanabe, M. Oshima, H. Asano, and M. Suzuki, "Wataer-Immersion-Induced Surface Reactions of EuBa2Cu3Oy Thin Films". Jpn. J. Appl. Phys. 34, p.1396 (1995).
22. H. Asano, M. Suzuki, T. Kiyokura, F. Maeda, A. Menz, Y. Watanabe, and M. Oshima, "Photoelectron Spectroscopy of EuBa2Cu3O7-y Thin Films Surfaces Treated by Electron Cyclotron Resonance Oxygen Ion Beam", Jpn. J. Appl. Phys. 34, p.L433 (1995).
23. T. Scimeca, Y. Watanabe, F. Maeda, and M. Oshima, "A Photoemission Study of Al and Au Overlayers on Se/GaAs(001)", Surface Sci. 16, 326-333 (1995).
24. Y. Hirota, T. Ogino, Y. Watanabe, M. Oshima, "Thermal effects on GaAs(001) surface prepared by deoxygenated and deionized water treatment", J. Vac. Sci. Technol. A13 p.1676 (1995).
25. M. Sugiyama, S. Maeyama, Y.Watanabe,
S. Heun, M.Oshima, "Ordering of Sulfur
Interlayer in MBE-grown SrF2/S/GaAs(111)A
and (111)B", Journal of Crystal Growth
150 p.1098 (1995).
26. S. Heun, M. Sugiyama, Y. Watanabe, S. Maeyama,
M.Oshima, "MBE-growth of SrF2 on InP",
Journal of Crystal Growth 150 p.1108 (1995).
27. F.Maeda, Y. Watanabe, M.Oshima, "Initial
stages of Ag growth on Sb-terminated GaAs(001)",
Journal of Crystal Growth 150 p.1164
(1995).
28. Y.Watanabe, F.Maeda, M.Oshima, "Formation of InSb
nanocrystals on Se-terminated GaAs(001)",
Journal of Crystal Growth 150 p.863 (1995).
29. H. Hibino and T. Ogino, "Scanning-tunneling-microscopy
observations of Ge solid-phase epitaxy on
Si(111)", Surface Sci. 16, 113 (1995)
(in japanese).
30, Y. Homma, N. Aizawa and H. Hibino, "Direct
evidence for Ge preferential growth at steps
and out-of-phase boundaries of (7x7) domains
on Si(111) in solid phase epitaxy",
Surf. Sci. 324, L333 (1995).
31. N. Aizawa and Y. Homma, "Annealing
behavior of (7x7) domain boundaries on Si(111)
observed by secondary electron imaging",
Surf. Sci. 340, 101 (1995).
32. –{ŠÔ–F˜aA—é–Ø•ô°A“ú”ä–ì_Ž÷¤‘Š‘ò‘¥s,
"“ñŽŸ“dŽq‘œ‚É‚æ‚éSi(111)•\–Ê‚Ì(7x7)ƒhƒƒCƒ“Œ`óŠÏŽ@"¤@•\–ʉȊw@16
(1995) 415.
33. N. Inoue, J. Osaka and Y. Homma, "Nucleation
of islands in GaAs MBE studied by in-situ
scanning electron microscopy", J. Cryst.
Growth 150, 107 (1995).
34. J. Osaka, Y. Homma and N. Inoue, "Surface
flattering by annealing after molecular beam
epitaxy growth revealed by in-situ secondary
electron microscopy", J. Cryst. Growth
150, 73 (1995).
35. H. Hibino, Y. Homma and T. Ogino, "Real-space
observation of (111) facet formation on vicinal
Si(111) surfaces", Phys. Rev. B 51,
7753 (1995).
36. S. Suzuki and M. Tomita, "Electron
energy loss spectroscopy of amorphous boron
filaments", Jpn. J. Appl. Phys. 34,
pp. L191-L194 (1995).
- International -
1. H. Hibino and T. Ogino, "Phase transition of 12~1 reconstruction on Si(331)", 13th International Vacuum Congress, 9th International Conference on Solid Surfaces, Yokohama (1995) SS8-ThM-3.
2. Y. Hirota and T. Fukuda, "STM and tunneling current studies of GaAs(001) surface prepared by dexygenated and deionized water treatment", 13th International Vacuum Congress, 9th International Conference on Solid Surfaces, Yokohama (1995) SS-TuP-32.
3. K. Prabhakaran and T. Ogino, "Behaviour of ultrathin layers of Co on Si and Ge systems", 13th International Vacuum Congress, 9th International Conference on Solid Surfaces, Yokohama (1995) EM4-WeM-5.
4. T. Fukuda and T. Ogino, "Oxygen adsorption on Ge-covered Si(100) surfaces", 13th International Vacuum Congress, 9th International Conference on Solid Surfaces, Yokohama (1995) SS9-TuA-6.
5. Y. Kobayashi and T. Ogino, "Infrared external reflection spectroscopy on silicon substrate with buried metal layer (BML) structure", 13th International Vacuum Congress, 9th International Conference on Solid Surfaces, Yokohama (1995) EM-ThP-17.
6. K. Sumitomo, T. Nishioka, and T. Ogino, "Atomic structure analysis of the interfaces in Si/Ge superlattices", 13th International Vacuum Congress, 9th International Conference on Solid Surfaces, Yokohama (1995) EM-ThP-21.
7. T. Ogino, H. Hibino, and Y. Homma, "Step arrangement design and nanostructure self-organization on Si(111) surfaces by patterning-assisted control", The Third International Symp. on Atomically Controlled Surfaces and Interfaces, North Carolina State Univ., Raleigh (1995) 19.
8. K. Sumitomo, T. Nishioka, N. Shimizu, Y. Shinoda, and T. Ogino, "Interface Structure of Ge/Si(11) during Solid-Phase Epitaxy Studied by Medium-Energy Ion Scattering", Ion Scattering Spectroscopy for Application on Surface Science, Osaka Electro-Communication Univ. (1995) 120.
9. A. Ikeda, Y. Kido, K. Sumitomo, and T. Nishioka, "Stopping power and energy straggling for 100-300 keV protons in Si", International Conference of Atomic Collision in Solid-16, Linz (1995).
- Domestic -
1. T. Ogino, H. Hibino, and Y. Homma, "Self-organization of nano-structure in small holes on Si(111) surfaces", The Japan Society of Applied Physics, Autumn Meeting (1995) 27p-ZV-14.
2. H. Hibino, "Adatom exchange on a Si(111)-7~7 surface", The Japan Society of Applied Physics, Autumn Meeting (1995) 28a-ZK-1.
3. K. Sumitomo, T. Nishioka, and T. Ogino, "Thermal stability of Si epi-layer on strained Ge thin film", The Japan Society of Applied Physics, Autumn Meeting (1995) 26a-ZD-5.
4. Y. Kobayashi and T. Ogino, "IR external reflection spectra of H on BML-Si(001) observed under UHV", The Japan Society of Applied Physics, Autumn Meeting (1995) 27p-ZV-10.
5. K. Prabhakaran and T. Ogino, "Behaviour of ultrathin layers of Co on Ge and Si systems (1): Diffusion selectivity of Co", The Japan Society of Applied Physics, Autumn Meeting (1995) 27p-ZL-9.
6. K. Prabhakaran, K. Sumitomo, and T. Ogino, "Behaviour of ultrathin layers of Co on Ge and Si systems (2): Selective reaction forming CoSi2", The Japan Society of Applied Physics, Autumn Meeting (1995) 27p-ZL-10.
7. T. Nishioka, T. Ogino, T. Ishiyama, and K. Murase, "Lattice strain evaluation at thin-Si/SiO2 interface of SIMOX substrate analysed by using MEIS", The Japan Society of Applied Physics, Autumn Meeting (1995) 27p-ZN-11.
8. K. Sumitomo, H. Yamaguchi, Y. Hirota, T. Nishioka, and T. Ogino, "MEIS observation of atomic displacement due to surface reconstruction of GaAs(001)", The Japan Society of Applied Physics, Autumn Meeting (1995) 26a-ZL-10.
9. Y. Hirota and T. Fukuda, "Temperature dependence of tunneling current for GaAs(001) surface prepared by DODIW treatment", The Japan Society of Applied Physics, Autumn Meeting (1995) 28p-ZN-3.
10. M. Suzuki, T. Ogino, and M. Kotera, "Effects on Micro-AES analysis caused by electron scattering due to topography", The Japan Society of Applied Physics, Autumn Meeting (1995) 27p-C-11.
11. A. Ikeda, Y. Kido, K. Sumitomo, and T. Nishioka, "Stopping power and straggling for medium energy protons in Si and Ge", The Physical Society of Japan, Autumn Meeting (1995) 27a-S-3.
12. H. Hibino, "Phase transition on Si(113)", The Japan Society of Applied Physics and Related Societies, The 43rd Spring Meeting (1996) 26a-S-10.
13. H. Hibino and T. Ogino, "Evolution of steps and domain boundaries during Si molecular-beam epitaxy on Si(111)", The Japan Society of Applied Physics and Related Societies, The 43rd Spring Meeting (1996) 27a-PB-14.
14. K. Sumitomo, T. Nishioka, A. Ikeda, and Y. Kido, "Stopping power and energy straggling at a solid surface in medium energy ion scattering", The Japan Society of Applied Physics and Related Societies, The 43rd Spring Meeting (1996) 26a-PA-9.
15. Y. Kobayashi and T. Ogino, "IR external reflection spectra of H on BML-Si(001) observed under UHV (2)", The Japan Society of Applied Physics and Related Societies, The 43rd Spring Meeting (1996) 27p-F-3.
16. K. Prabhakaran and T. Ogino, "Oxidation behavior of cobalt germanide and cobalt silicide surfaces", The Japan Society of Applied Physics and Related Societies, The 43rd Spring Meeting (1996) 27a-PB-12.
17. T. Ogino, Y. Kobayashi, and K. Prabhakaran, "Semiconductor/insulator superlattice formed by oxygen ion implantation into Si/Ge multilayer", The Japan Society of Applied Physics and Related Societies, The 43rd Spring Meeting (1996) 27p-ZF-11.
18. Y. Homma, T. Ogino, and N. Aizawa, "Position-controlled planarization of Si(111) wafers", The Japan Society of Applied Physics and Related Societies, The 43rd Spring Meeting (1996) 27a-F-2.
19. Y. Hirota, T. Fukuda, and T. Ogino, "Difference of surface Fermi level position among DODIW-treated HB-, VPE-, and MBE-grown GaAs(001) surfaces", The Japan Society of Applied Physics and Related Societies, The 43rd Spring Meeting (1996) 26a-M-7.
20. T. Nishioka, K. Sumitomo, H. Yamaguchi, Y. Hirota, and T. Ogino, "MEIS simulation of atomic displacement of reconstructed GaAs(001) surfaces", The Japan Society of Applied Physics and Related Societies, The 43rd Spring Meeting (1996) 26a-M-10.
21. K. Sumitomo, T. Nishioka, and T. Ogino, "Structural analysis of the Ge dimer on Si(001) substrate by medium energy ion scattering", The Physical Society of Japan, 51st Annual Meeting (1996) 3a-J-5.
22. Y. Homma, T. Ogino, and N. Aizawa, "Selective (111) plane growth in craters formed on Si(111) substrate during UHV-heating", The Physical Society of Japan, 51st Annual Meeting (1996) 3a-J-6.
23. T. Nagao, M. Umeuchi, Y. Kobayashi, and C. Oshima, "HREELS study of Na adsorbed Si(111)-7~7 surface", The Physical Society of Japan, 51st Annual Meeting (1996) 30a-PS-15.
24. T. Fukuda, "Interface-dependent schottky barrier heights of Ag/Si(111)", The Physical Society of Japan, 51th Annual Meeting (1996) 3p-J-2.
25. A. Ikeda, Y. Kido, K. Sumitomo, and T. Nishioka, "Stopping power and energy straggling for 100 keV H+ at Sb/Si(001) surface", The Physical Society of Japan, 51st Annual Meeting (1996) 1a-W-1.
26. M. Suzuki, T. Ogino, and M. Kotera, "Electron scattering effect by surface shape in AES analysis", The 15th Meeting of The Surface Science Society of Japan (1995) 1A05.
27. T. Ogino, H. Hibino, and Y. Homma, "Step arrangement design on Si surfaces and its application", The Institute of Electronics, Information and Communication Engineers, Technical Report of IEICE (1995) SDM95-97.
28. Y. Hirota, T. Fukuda, and K. Sumitomo, "Effects of thermal heating on GaAs(001) surface prepared by DODIW treatment", The Institute of Electronics, Information and Communication Engineers, Technical Report of IEICE (1995) ED95-109.
29. T. Ogino, "Control of Si surfaces and self-organization of nanostructures", Denkigakkai, Meeting of the Atomic Order Process Technology Committee, Tokyo (1995).
30. T. Ogino, "Control of step arrangement on Si surfaces and nanofabrication", Denkigakkai, Joint Meeting of the Ultra-Fine Process Committee and the Ultra-High Integrated Device Committee, Tokyo (1995).
31. T. Ogino, "Self-organization of nanostructures on silicon surfaces", Nihon Gakujutsu-Sinkokai, the 151th Committee, the 37th meeting, Gifu (1996) p. 28.
32. T. Ogino, "Self-organization of Si nanostructure", Symposium of the Center for Interdisciplinary Research, Tohoku Univ., Sendai (1996).
33. Y. Kobayashi, "Infrared External Reflection Spectra of Atomic H Adsorbed Si(001) Surfaces", The 15th Seminar on Surface Spectrscopy of Adsorbed Species, Atagawa(1996)13.
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