1. Y. Hirota and Sumitomo,"Thermal effects on surface Fermi level for GaAs(001) surface prepared by DODIW treatment", J. Appl. Phys. 79(10) (1996) 7785.
2. H. Hibino and T. Ogino,"Two-stage phase transition of 12×1 reconstruction on Si(331)", Phys. Rev. B 53 (1996) 15 682.
3. Y. Kobayashi, K. Sumitomo, K. Prabhakaran, and T. Ogino,"Preparation and characterization of a well-ordered surface on a Si(001) substrate with a buried metal layer for application of infrared reflection spectroscopy", J. Vac. Sci. Technol. A 14(4) (1996) 2263.
4. T. Hasegawa, J. Nishijo, Y. Kobayashi, and J. Umemura,"Effect of Substrates on the Infrared External Reflection Spectra of Langmuir-Blodgett Films", Bull. Chem. Soc. Jpn., 70 (1997) 525.
5. H. Hibino, and T. Ogino,"Exchanges between group-III (B, Al, Ga, In) and Si atoms on Si(111)-R3×R3 surfaces", Phys. Rev. B 54 (1996) 5763.
6. N. Aoki, Y. Homma, and Y. Hirota,"Oxidation of GaAs Surfaces in Deionized Water Studied by X-ray Photoelectron Spectroscopy", (in Japanese) Hyomen Kagaku 17(10) (1996) 612.
7. A. Ikeda, K. Sumitomo, T. Nishioka, and Y. Kido,"Stopping powers and energy straggling for 50-300 keV H+ in amorphous Si and Ge films", Nuclear Instruments and Methods in Physics Research B 115 (1996) 34.
8. Y. Kobayashi, and T. Ogino,"Infrared external reflection spectroscopy of self-assembled monolayer films on Si substrate with a buried metal layer (BML) structure", Appl. Surf. Sci. 100/101 (1996) 407.
9. K. Sumitomo, T. Nishioka, and T. Ogino,"Atomic structure analysis of the interfaces in Si/Ge superlattices", Appl. Surf. Sci. 100/101 (1996) 503.
10. K. Prabhakaran and T. Ogino,"Behavior of ultrathin layers of Co on Si and Ge systems", Appl. Surf. Sci. 100/101 (1996) 518.
11. T. Fukuda,"Random adatom heights in Ge/Si(111)-5×5 surfaces", Surf. Sci. 351 (1996) 103.
12. K. Sumitomo, H. Yamaguchi, Y. Hirota, T. Nishioka, and T. Ogino,"Structure analysis of the GaAs(001)-2×4 surface using medium energy ion scattering", Surf. Sci. 355 (1996) L361.
13. H. Hibino and T. Ogino,"Phase transition of 12×1 reconstruction on Si(331)", Surf. Sci. 357-358 (1996) 102.
14. Y. Hirota and T. Fukuda,"STM and tunneling current studies of a GaAs(001) surface prepared by deoxygenated and deionized water treatment", Surf. Sci. 357-358 (1996) 504.
15. T. Fukuda and T. Ogino,"Oxygen adsorption on Ge-covered Si(100) surfaces", Surf. Sci. 357-358 (1996) 748.
16. H. Hibino, Y. Homma, and T. Ogino,"('1×1') to (7×7) phase transition on Si(111) under heating current", Surf. Sci. 364 (1996) L587(1996).
17. Y. Kobayashi and T. Ogino,"Angle-variable infrared external reflection spectroscopy in UHV and its application to the observation of Si-H vibrations on Si(001) substrates with a buried metal layer", Surf. Sci. 368 (1996) 102.
18. T. Ogino, H. Hibino, and Y. Homma,"Step arrangement design and nanostructure self-organization on Si(111) surfaces by patterning-assisted control", Appl. Surf. Sci. 107 (1996) 1.
19. K. Prabhakaran, T. G. Andersson, and K. Nozawa,"Nature of native oxide on GaN surface and its reaction with Al", Appl. Phys. Lett. 69(21) (1996) 3212.
20. T. Ogino, H. Hibino, and K. Prabhakaran,"Fabrication of nanostructures on silicon surfaces on wafer scale by controlling self-organization processes", J. Vac. Sci. Technol. B 14(6) (1996) 4134.
21. K. Prabhakaran, K. Sumitomo, and T. Ogino,"Fabrication of buried epitaxial CoSi2 layer through selective diffusion", Appl. Phys. Lett. 70(5) (1997) 607.
22. H. Hibino and T. Ogino,"Substitution of In for Si adatoms and exchanges between In and Si adatoms on a Si(111)-7×7 surface", Phys. Rev. B 55(11) (1997) 7018.
23. Y. Hirota, Y. Watanabe, T. Fukuda, K. Sumitomo, and T. Ogino,"Cleaning of GaAs(001) Surfaces with Deoxygenated and Deionized Water and the Effects of Thermal Treatments on the Surfaces", (in Japanese) Hyomen Kagaku 18(4) (1997) 232.
24. Sumitomo,"Ion Scattering Spectroscopy", (in Japanese) Material Analysis for Nano-electronics technology ed. M. Oshima and Y. Homma (1996) 165.
25. Y. Kobayashi and T. Ogino,"IR reflection spectroscopy of hydrogen on single crystal Si surface", (in Japanese) Oyobutsuri 65 (1996) 1069.
26. Y. Homma, H. Yamaguchi and Y. Horikoshi, "Direct Comparison of GaAs Surface Morphology Between Migration Enhanced Epitaxy and Molecular Beam Epitaxy", Appl. Phys. Lett. 68 (1996) 63.
27. Y. Homma, J. Osaka and N. Inoue, "Secondary Electron Imaging of Nucleation and Growth of GaAs", Surf. Sci. 357-358 (1996) 441.
28. M. Hoshino, Y. Shigeta, K. Ogawa and Y. Homma, "STM and SEM Studies on the Character of Triangular Si(111)-7x7 Domains Formed in Quenched Si(111) Surface", Surf. Sci. 365 (1996) 29.
29. Y. Homma, H. Hibino, T. Ogino and N. Aizawa, Sublimation of Si(111) Surface in Ultrahigh Vacuum, Phys. Rev. B 55 (1997) R10237.
30. Y. Homma, H. Yamaguchi and Y. Horikoshi, In Situ Observation of MEE GaAs Growth Using Scanning Electron Microscopy, J. Cryst. Growth 175/176 (1997) 292.
31. N. Aizawa, Y. Homma and M. Tomita, Effect of Surfactant on Ge Crystallization on Si in Solid Phase Epitaxy, Surf. Sci. 376 (1997) L419.
32, F. Maeda, Y. Watanabe and M. Oshima, "Realtime analysis on GaSb(001) during Sb-desorption by core-level photoelectron spectroscopy", Physical Review Letters 78, pp. 4233-4236 (1996).
33. S. Heun, M. Sugiyama, S. Maeyama, Y. Watanabe, K. Wada and M. Oshima, "The influence of an ultrathin psudomorphic interface control layer of Si on the growth of SrF2 on GaAs", Materials Science Forum 203 p.129 (1996).
34. S. Heun, M. Sugiyama, S. Maeyama, Y. Watanabe, K. Wada and M. Oshima, "The growth of Si on different GaAs surfaces: A comparative study", Phys. Rev. B53 p.13534 (1996).
35. F. Maeda, Y. Watanabe, and M. Oshima, "Photoelectron Spectroscopy on Reconstructed GaSb(001)", Journal of Electron Spectroscopy and Related Phenomena 80 p.225 (1996).
36. F. Maeda, Y. Watanabe, Y. Muramatsu, and M. Oshima, "GaSb-growth study by realtime crystal growth analysis system using synchrotron radiation photoelectron spectroscopy", Jpn. J. Appl. Phys. 35 p.4457 (1996).
37. F. Maeda, Y. Watanabe, and M. Oshima, "Surface termination of GaAs(001) by Sb-dimers", Surface Science 357/358 p.540 (1996).
38. Y. Watanabe, S. Maeyama, F. Maeda, and M. Sugiyama, "Application of Synchrotron Radiation to Surface and Interface Characterization", NTT REVIEW 8 pp.60-69 (1996).
39. Y. Watanabe, S. Maeyama, F. Maeda, and M. Sugiyama, "Synchrotron Radiation Analysis", NTT R&D 45 pp.277-284 (1996).
40. M. Oshima, Y. Watanabe, S. Heun, M. Sugiyama, and T. Kiyokura, "Initial Stages of Nanocrystal Growth of Compound Semiconductors on Si Substrates", Journal of Electron Spectroscopy and Related Phenomena 80 pp.129-132 (1996).
41. Y. Watanabe, F. Maeda, and M. Oshima,"Synchrotron
radiation photoelectron spectroscopy study
of bonding at heterointerfaces between InAs
nanocrystals and Se-terminated GaAs"
Journal of Electron Spectroscopy and Related
Phenomena 80 pp.221-224 (1996)
42. K. Saito, Y. Sato, N. Yabumoto and Y.
Homma, "Investigation of Defect concentration
in implanted Silicon substrates by hydrogen
decoration", J. Electrochem. Soc. 143,
4101 (1996).
43. N. Inoue, Y. Homma, J. Osaka and T Araki,
"Behavior of monolayer holes on MBE
grown GaAs surface during annealing revealed
by in situ scanning electron microscopy",
J. Cryst. Growth 164, 88 (1996).
44. 高井建一、本間芳和、井筒香、南雲道彦,
"昇温脱離法により分離した高強度鋼中水素の二次イオン質量分析法によるトラップサイトの同定",
日本金属学会誌 60, 1155 (1996).
45. 高井建一､関純一、本間芳和, "冷間伸線型及び熱処理型ＰＣ鋼材の遅れ破壊過程における水素急増特性、鉄と鋼
81 (1995) 83.
46. Y. Higashi, T. Maruo, Y. Homma and M.
Miyake, "Quantitative depth profiling
of boron in shallow BF2+-implanted Silicon
by using laser-ionization SNMS", J.
Vac. Sci. Technol. B 14, 763 (1996).
47. K. Saito, Y. Sato, N. Yabumoto and Y.
Homma, "Application of thermal desorption
spectroscopy to study implanted defects",
Jpn. J. Appl. Phys. 35, 589 (1996).
48. T. Ogino, H. Hibino and Y. Homma, "Step
arrangement design and nanostructure self-organization
on Si(111) surfaces by patterning-assisted
control", Appl. Surf. Sci. 107, 1 (1996).
49. S. Suzuki and M. Tomita, "Observation
of potassium-intercalated carbon nanotubes
and their valence-band excitation spectra",
J. Appl. Phys. 79, pp. 3739-3743 (1996).
50. S. Suzuki, M. Tomita, S. Okada and H.
Arai, "Valence analysis of transition
metal ions in spinel LiMnMO4 (M=Ti, V, Cr.
Mn, Co) by electron energy loss spectroscopy",
J. Phys. Chem. Solids 57, pp. 1851-1856 (1996).
51. K. Sumitomo, T. Nishioka and T. Ogino,
"Atomic structure analysis of the interfaces
in Si/Ge superlattices", Appl Surf.
Sci. 100/101, 503 (1996).
52. K. Prabhakaran, K. Sumitomo and T. Ogino,
"Diffusion mediated chemical reaction
in Co/Ge/Si(100) forming Ge/CoSi2/Si(100)",
Appl. Phys. Lett. 68, 1241 (1996).
1. T. Ogino, H. Hibino, and K. Prabhakaran,"Fabrication of Nanostructures on Si Surfaces on a Wafer Scale by Controlling Self-Organization Processes", The 40th Int. Conf. on Electron, Ion and Photon Beam Technology and Nanofabrication (EIPBN)1996, Atlanta (1996) K1 [invited].
2. Y. Kobayashi and T. Ogino,"Observation of Si-H Vibrations on Si(001) Substrates with Buried Metal Layer (BML) by Angle-Variable Infrared External Reflection Spectroscopy in UHV", 8th Int. Conf. on Vibrations at Surfaces, The Univ. of Birmingham (1996) P33.
3. T. Ogino,"Device and Materials Innovations for Future Intelligent Systems", The 1996 International Conference on Solid State Devices and Materials (SSDM), Yokohama (1996) Rump Session c, Panelist.
4. K. Sumitomo, T. Nishioka, and T. Ogino,"Structure Analysis of Ge Dimer on Si(001) by MEIS Blocking Profiles from Embedded Ge Layers", American Vacuum Soc. 43rd National Symp., Philadelphia (1996) SS1-TuM8.
5. T. Ogino, H. Hibino, and Y. Homma,"Step Arrangement Design and Nanostructure Self-organization on Si Surfaces", Second Int. Symp. on Control of Semiconductor Interfaces, Karuizawa (1996) A3-1 [invited].
6. K. Prabhakaran, K. Sumitomo, and T. Ogino,"Formation of Buried CoSi2 Layer Through Diffusion Mediated Reaction", Second Int. Symp. on Control of Semiconductor Interfaces, Karuizawa (1996) B4-5.
7. Y. Hirota, Y. Watanabe, and T. Ogino,"Relaxation of Band Bending for GaAs(001) Surface by Controlling the Crystal Defects near the Surface", Second Int. Symp. on Control of Semiconductor Interfaces, Karuizawa (1996) B3-6.
8. T. Ogino,"Self-Organization of Nanostructures on Si Wafers by Surface Structure Control", The 10th TOYOTA Conf. on Atomic, Molecular and Electronic Dynamic Processes on Solid Surf., Shizuoka (1996) Abstract p.38 [invited].
9. T. Ogino,"Control of Atomic Steps and Its Application to Wafer-Scale Nanofabrication", Int. Symp. on Control of Single Particles and Its Application, Waseda Univ. (1996) Proceedings p.139 [invited].
10. K. Prabhakaran and T. Ogino,"Evidence for Co-Si and Co-Ge Bond Dissociative Mechanism during Oxidation of Cobalt Silicide and Cobalt Germanide Thin Films", 6th Iketani Conf., Int. Symp. on Surface Nano-Control of Environmental Catalysts and Related Materials, Waseda Univ. (1996) Abstracts p.229.
11. T. Ogino, K. Sumitomo, K. Prabhakaran, and Y. Kobayashi,"Fabrication of Multi-Level Buried Oxide Layers by Oxygen-Ion-Implantation into Si/Ge Multilayers into Si/Ge multilayers", MRS Fall Meeting, Boston, Massachusetts (1996) A5.9.
12. T. Fukuda,"Ni-induced ring cluster, atomic and electronic structures", Nano-Scale Structures and Properties at Interfaces, IMR, Tohoku Univ. Sendai (1997) II-21.
13. M. Suzuki, K. Mogi, T. Ogino, and S. Ichimura,"Change
of Auger Signal Intensities Caused by surface Topography", 2nd Int. Symp.
on Advanced Phys. Fields, Characterization of Nanostructures, Tsukuba (1997)
P-14.
- Domestic -
1. T. Ogino,"Wafer-scale control of nanostructures by self-organization processes", The 24th Seminar of Thin-Film and Surf. Phys., Waseda Univ. (1996) p.109.
2. T. Ogino,"Si nanofabrication based on surface structure control", Committee on Functions and Applications of Nanostructure Materials, the 16th Meeting Nihon Kogyo Shinko Kyokai, (1996).
3. H. Hibino and T. Ogino,"Anisotropy in growth kinetics at steps on Si(111)", The Japan Society of Applied Physical, Autumn Meeting (1996) 8a-W-4.
4. H. Hibino and T. Ogino,"Initial stages of Si molecular-beam epitaxy on Si(111)R3×R3-B", The Japan Society of Applied Physical, Autumn Meeting (1996) 8a-W-5.
5. Y. Homma, N. Aizawa, and T. Ogino,"Sublimation of Si(111) surface in ultrahigh vacuum", The Japan Society of Applied Physics, Autumn Meeting (1996) 8a-W-6.
6. T. Ogino, H. Hibino, and Y. Homma,"Wafer-scale control of atomic step arrangement on Si(111) surfaces by hydrogen furnace annealing", The Japan Society of Applied Physics, Autumn Meeting (1996) 9p-L-6.
7. Y. Homma, N. Aizawa, and T. Ogino,"Position-controlled planarization of Si(111) wafers (2)", The Japan Society of Applied Physics, Autumn Meeting (1996) 9p-L-7.
8. H. Omi, H. Hibino, and T. Ogino,"Self Assembling of Si1-xGex(0.8≦x≦1) Quantum Wires on Si(113)", The Japan Society of Applied Physics, Autumn Meeting (1996) 8a-D-7.
9. K. Sumitomo, T. Ogino, Y. Kobayashi, and K. Prabhakaran,"Monte Carlo simulation of oxygen ion implantation into Si/Ge multilayer", The Japan Society of Applied Physics, Autumn Meeting (1996) 7p-P-12.
10. K. Prabhakaran and T. Ogino,"Oxynitridation reaction on Si and Ge surfaces using NO", The Japan Society of Applied Physics, Autumn Meeting (1996) 8p-W-16.
11. Y. Kobayashi, H. Isaka, H. Teramae, N. Matsumoto, and T. Ogino,"Ab initio MO Analysis of SiHx vibrations observed in IR spectra from H on BML-Si(001)", The Japan Society of Applied Physics, Autumn Meeting (1996) 9a-L-2.
12. Y. Hirota, Y. Watanabe, F. Maeda, and T. Ogino,"Shift of surface Fermi level position toward conduction band edge for GaAs(001) Surface", The Japan Society of Applied Physics, Autumn Meeting (1996) 7a-SZD-3.
13. K. Sumitomo and T. Ogino,"Structure analysis of Sb dimers on the Si(001) substrate using Medium-Energy Ion Scattering", Meeting of the Physical Society of Japan (1996) 4p-YB-3.
14. A. Ikeda, K. Sumitomo, T. Nishioka, and Y. Kido,"Stopping powers and energy straggling for 50 and 100 keV H+ ions passing through the Si(001) 2×1: Sb surface", Meeting of the Physical Society of Japan (1996) 2a-K-1.
15. T. Fukuda and T. Ogino,"Oxidatin Kinetics of Ge/Si(100) surface", Meeting of the Physical Society of Japan (1996) 3a-PS-62.
16. T. Fukuda,"Interface-dependent Schottky Barrier Height of Ag/Si(111)", Meeting of the Physical Society of Japan (1996) 3p-J-2.
17. Y. Homma, T. Ogino, and N. Aizawa,"Formation of Ultra-Large-Scale Si(111) Terraces by UHV-Heating and Evaluation of Step Distribution", The 141th Committee on Microbeam Analysis, the 87th Meeting (1996) p.60.
18. Y. Hirota, Y. Watanabe, T. Fukuda, K. Sumitomo, and T. Ogino,"Cleaning of GaAs(001) Surfaces with deoxygenated and deionized wafer and the effects of thermal Treatments on the surfaces", Nihon Gakujutsu Shinkokai, The 136th Committee on Future Fablicatition Technology, Tokyo (1996).
19. Y. Homma, M. Suzuki, H. Hibino, and N. Aizawa,"Secondary electron imaging of (7×7) domains on Si(111) surfaces", The 16th Meeting on Surface Science, Waseda Univ. (1996) 1H01 [invited].
20. T. Ogino, K. Prabhakaran, Y. Kobayashi, and K. Sumitomo,"Challenge for New Nanostructures through Innovation in Materials and Processes -Fabrication of multi-level buried oxide layers by oxygen-ion-implantation into Si/Ge multilayer-", The Institute of Electronics, Information and Communication Engineers (1996) SDM96-138, p.45 [invited].
21. T. Ogino,"Wafer-Scale control of Self-organized nanostructures", Committee on Fine-Structure Processes and Devices, Nihon Denshi Kogyo Shinko Kyokai, Tokyo (1996).
22. H. Isaka, T. Fukuda, T. Ogino, and N. Matsumoto,"STM, AFM Study of Periodic Polycarbosilanes in solid state film", The 1st symp. of Silicon Chemistry Institute, Tsukuba (1996) 33.
23. Y. Kobayashi,"BML-IRRAS Observation of H on Si and SiGe Surfaces", The 16th Seminar on Surface Spectroscopy of Adsorbed Species, Ranzan (1996) 4.
24. T. Ogino,"Self-organization of Ge-quantum-dot networks on Si surfaces", The 2nd Kansai seminar on self-controlled surface and thin film process, The Japan Soc. of Appl. Phys., Osaka Univ. (1997).
25. H. Hibino, K. Sumitomo, and T. Ogino,"Structure and thermal stability of Si layers grown on Si(111)R3×R3-B", The Japan Society of Applied Physics and Related Societies, Spring Meeting, (1997) 30a-ZN-6.
26. H. Omi and T. Ogino,"Self-organization of Ge nano wires in a Ge/Si(113) superlattice system", The Japan Society of Applied Physics and Related Societies, Spring Meeting (1997) 28p-T-10.
27. K. Sumitomo, Y. Kobayashi, T. Ogino, A. Ikeda, and Y. Kido,"Surface composition analysis of Ge/Si(001) using medium-energy ion scattering", The Japan Society of Applied Physics and Related Societies, Spring Meeting (1997) 29a-ZN-8.
28. Y. Kobayashi and T. Ogino,"Surface composition analysis of Ge/Si(001) using Si-H/Ge-H surface vibrations", The Japan Society of Applied Physics and Related Societies, The 44th Spring Meeting,(1997) 29a-ZN-9.
29. K. Prabhakaran and T. Ogino,"Effect of annealing on ultrathin oxynitride films on Si(100)", The Japan Society of Applied Physics and Related Societies, Spring Meeting (1997) 29p-ZN-13.
30. Y. Hirota, F. Maeda, Y. Watanabe, and T. Ogino,"Effects of bulk doping on surface Fermi level position for pre-heated and chemically etched GaAs(001) Surface", The Japan Society of Applied Physics and Related Societies. Spring Meeting (1997) 30a-ZA-4.
31. T. Ogino, H. Hibino, and Y. Homma,"Step Arrangement Control and Nanostructure Formation", The Japan Society of Applied Physics and Related Societies, Spring Meeting (1997) 30p-ZN-6 [invited].
32. T. Fukuda and T. Ogino,"Oxygen chemisorption and associating dimer-backling stabilization on Ge(100) surfaces", 52nd Annual Meeting, The Physical Society of Japan, (1997) 31a-T-6.
33. A. Ikeda, Y. Kido, K. Sumitomo, and T. Nishioka,"Intermixing at Ge/Si(001) Interfaces Studied by Surface Energy Loss MEIS", 52nd Annual Meeting, The Physical Society of Japan, (1997) 29p-F-9.
34. Y. Homma, H. Hibino, and T. Ogino,"Sublimation
processes of semiconductor surfaces", 52nd Annual Meeting, The Physical
Society of Japan (1997) 28p-WB-2 [invited].
Go back to Ogino Group Home Page.