- International
-
1 . T. Ogino; "Wafer-scale control of annostructures on Si surfaces" F. Inv. 03, The 5tu IUMRS-ICA, 13-16 October, 1998, Bangalore, India.
2 . T. Ogino; "Atomic-step-networks for nanopatterning on Si surfaces" 16A-8-1 Inv., International Microprocesses and Nanotechnology Conf. , 13-16 July, 1998, Kyungju, Korea.
3 . Y. Homma; "In situ scanning electron microscopy of epitaxial processes" MSM XI Abstract Book 4. 1 (I), 22-25 March 1999, University of Oxford.
4 . H. Yamaguchi and Y. Homma; "Real-Space Observation of MBE Growth Processes on GaAs (111)A Substrates" 26p-P-3, Phys. Soci. of Japan, 1998, 25-28 September 1998, University of Ryukyus & Okinawa International University.
5 . K. Sumitomo, Y. Kobayashi, T. Ogino and T. Ito; "Ge segregation mechanisms during Si/Ge multi-layer growth" MRS Fall Meeting, Nov. 30 - Cec. 4, 1998, Boston Massachusetts.
6 . K. Prabhakaran; "Chemical bond manipulation for nanostructure integration on wafer scale" N. Inv. 08, The 5tu IUMRS-ICA, 13-16 October 1998, Bangalore, India.
7 . K. Prabhakaran and T. Ogino; "High Temperature Reaction of Nitric Oxide with Si Surfaces: Dissociation, Selective Desorption of SiO and Formation of Si Nanopillars" Post-deadline discovery sesson, 45th International Symposium (AVS), Vacuum, Thin Films, Surfaces/Interfaces and Processing, 2-6 Nov. 1998, Baltimore Conventioncenter, Baltimore, Maryland.
8 . K. Prabhakaran and T. Ogino; "Evolution of Nanostructure Fabrication From Traditional Surface Science" Invited talk, International Seminar on Physics and Technology of Compound Semiconductor Advanced Devices (RCIQE), 8-9 Feb. 1999, Conference Hall, Hokkaido University.
9 . H. Omi and T. Ogino; "Control of Atomic Step Arrangements on a Patterned Si(111) Substrate Through Molecular-Bean Epitaxy" SS-ThP8, 45th International Symposium (AVS), Vacuum, Thin Films, Surfaces/Interfaces and Processing, 2-6 Nov. 1998, Baltimore Convention, Baltimore, Maryland.
10. P. Finnie; "Atomic Step Dynamics and Patterning with Applications to Epitaxy" 8 Dec. 1998, University of Ottama, Canada.
11. P. Finnie; "Atomic Steps Dynamics and Patterning with Applications to Epitaxy" 7 Dec. 1998, National Research Council, Ottawa, Canada.
12. P. Finnie; "Atomic Steps Dynamics and Patterning with Applications to Epitaxy" Center d'etudes atomique, Département de recherche fondamentale sur la matière condensée, 9 Sept. 1998, Grenoble, France.
13. P. Finnie; "Maskless Selective Area Molecular
Beams Epitaxy of Semiconductors and Metals
using Atomic Step Networks on Silicon" Tenth
International Conference on Molecular Beam
Epitaxy, 2 Sept. 1998, Cannes, France.
14, H. Akazawa, M. Sugiyama, S. Maeyama, M. Oshima,
and Y. Watanabe, “Photo-stimulated H+ desorption from Si-based materials initiated
by deep-core-level excitatin”, Physical
Review B57 pp.4883-4887 (1998).
15. T. Mano, H. Fujioka, K. Ono, Y. Watanabe,
and M. Oshima, Appl. Surface Science 130-132
pp.760-764 (1998).
16. F. Maeda, Y. Watanabe, and M. Oshima,
"Realtime Analysis for MBE by Time-Resolved
Core-Level Photoelectron Spectroscopy",
Journal of Synchrotron Radiation 5, pp.1026-1028
(1998).
.
17. T. Kiyokura, F. Maeda, and Y. Watanabe, "Optical
design for a bending -magnet beamline based
on a varied-line-spacing plane grating",
Journal of Synchrotron Radiation 5, pp.572-574
(1998).
18. T. Kiyokura, F. Maeda, Y. Watanabe, E.
Shigemasa, A. Yagishita, M. Oshima, Y. Iketaki,
and Y. Horikawa, "Submicrometre-area
high-energy-resolution photoelectron spectroscopy
system"Journal of Synchrotron Radiation
5, pp.1111-1113 (1998).
19. F. Maeda and Y. Watanabe, "Time-Resolved
Core-level Photoelectron Spectroscopy on
Sb-Terminated GaAs(001) under Sb Supply Control
at Growth Temperature", Journal of Electron
Spectroscopy and Related Phenomena 88-91,
pp.779-785 (1998).
20 . T. Kiyokura, F. Maeda, Y. Watanabe,
Y. Kadota, Y. Iketaki, Y. Horikawa, M. Oshima,
E. Shigemasa, and A. Yagishita, "Photoelectron
Microspectroscopy Observations of a Cleavage
Surface of Semiconductor Double Heterostructure",
J. Vac. Sci. Technol. A16, pp.1086-1090 (1998).
21. H. Hibino, K. Sumitomo, T. Fukuda, Y.
Homma, and T. Ogino,"Disordering of
Si(111) at high temperatures", Phys.
Rev. B 58, 12587 (1998)
22. H. Hibino, Y. Homma, and T. Ogino, "Triangular-tiled
arrangement of 7x7 and '1x1' domains on Si(111)",
Phys. Rev. B 58, R7500 (1998).
23, H. Hibino and T. Ogino, "Formation
of twinned two-bilayer-high islands during
initial stages of Si growth on Si(111)R3xR3-B",
Surf. Sci. 412/413, 132 (1998).
24. H. Hibino, K. Sumitomo, and T. Ogino,
"Twinned epitaxial layers formed on
Si(111)R3xR3-B", J. Vac. Sci. Technol.
A 16, 1934 (1998)
25. H. Hibino, K. Sumitomo, and T. Ogino,
"Growth process of twinned epitaxial
layers on Si(111)R3xR3-B and their thermal
stability", Appl. Surf. Sci. 130-132,
41 (1998).
26. Y. Homma, H. Hibino, T. Ogino and N.
Aizawa, "Sublimation of heavily B-doped
Si(111), surface", Phys. Rev. B 58,
13146 (1998).
27. M. Suzuki, K. Mogi and Y. Homma, "Two-dimensional
imaging of surface morphology by energy-analyzed
secondary electrons and auger electron spectroscopy
for stepped Si(111) surfaces", J. Vac.
Sci. Technol. A 16, 1122-1126 (1998).
28. Y. Higashi and Y. Homma, "A quantification
method using inverse velocity dependences
of ion intensities in secondary ion mass
spectrometry", Anal. Sci. 14, 281 (1998).
29. M. Suzuki, K. Mogi, Y. Homma, "Si(111)
表面の分光電子観察", Surf. Sci. 19,
48 (1998),
30. N. Aizawa, Y. Homma and M. Tomita, "Electron
microscopy study of surfactant mediated solid
phase epitaxy of Ge on Si(111)", Jpn.
J. Appl. Phys. 37, 2460 (1998).
31, Y. Higashi, T. Maruo and Y. Homma, "Depth
profiling of an InGaAs/InP multilayer sample
using grazing-incidence sputtered natural
mass spectrometry with laser post-ionization",
Surf. Int. Anal. 26, 220 (1998).
32. Y. Homma, et al., "Secondary ion
mass spectrometry round-robin study of relative
sensitivity factors in Gallium Arsenide",
Surf. Int. Anal. 26, 144 (1998).
33. S. Suzuki, C. Bower and O. Zhou, "In-situ
TEM and EELS studies of alkali-metal intercalation
with single-walled carbon nanotubes",
Chem. Phys. Lett. 285, pp. 230-234 (1998).
34. C. Bower, S. Suzuki, K. Tanigaki and
O. Zhou, "Synthesis and structure of
pristine and alkali-metal-intercalated single-walled
carbon nanotubes", Appl. Phys. A 67,
pp 47-52 (1998).
35. S. Suzuki, T. Shodai and J. Yamaki, "Electron
energy loss spectroscopy of Li2.6-xCo0.4N
(x=0.0 and 1.6)", J. Phys. Chem. Solids
59, pp. 331-336 (1998).
36. K. Sumitomo, T. Nishioka and T. Ogino,
"Dimer Structures of Ge/Si(001) and
Sb/Si(001) studied by medium-energy ion scattering",
Appl. Surf. Sci. 130-132, 133 (1998),
37. A. Sakamoto, H. Kudo, T. Ishihara, S.
Seki and K. Sumitomo, "Ion-induced electron
emission from crystal targets with noncrystalline
overlayers", Nucl. Instr. and Meth.
B140, 47 (1998).
38. 荻野俊郎、本間芳和、日比野浩樹、小林慶裕、住友弘二、K.
Prabhakaran､尾身博雄；「自己組織化によるSiナノ構造のウェーハスケール制御」､表面科学、第１９巻､５５７
(1998).
39. K. Prabhakaran, Y. Kobayashi and T. Ogino,
"Improved thermal stability of ultrathin
silicon oxynitridelayer due to nitrogen incorporation
at the interface", Applied Surface Sci.
130-132 (1998) 182-186.
40. K. Prabhakaran, T. Matsumoto, T. Ogino
and Y. Masumoto, "Fabrication of multiperiod
Si/SiO2/Ge layered structurethrough chemical
bond manipulation", Appl. Phys. Lett.
72 (24) 1998.
41. T. Ogino, K. Prabhakaran and H. Hibino,
"Nanointegration on Si surfaces through
self organisationprocesses"(submitted
to Scanning Microscopy).
- Domestic
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1 . T. Ogino, Y. Kobayashi, K. Sumitomo and K. Prabhakaran; "Atomic Processes of Interface Formation in Si/Ge" 16p-ZN-8, The 59th Autumn Meeting, The Japan Society of Applied Physics, 15-18 Sept. 1998, Hiroshima University.
2 . Y. Homma, P. Finnie, T. Ogino, H. Noda and T. Urisu; "Aligned island formation using a patterned Si substrate" 28p-ZL-7, ?46?????????????, March 1999, ??????.
3 . H. Yamaguchi and Y. Homma; "Monolayer-scale SEM observation of growth processes of GaAs" 17a-YP-6, The 59th Autumn Meeting, The Japan Society of Applied Physics, 15-18 September 1998, Hiroshima University.
4 . H. Hibino, T. Kawamura and T. Ogino; "RHEED analysis of epitaxial twinned Si layers on Si(111) ?3×?3 烹" 15a-P3-8, The 59th Autumn Meeting, The Japan Society of Applied Physics, 15-18 September 1998, Hiroshima University.
5 . H. Hibino and T. Ogino; "Surface morphology of SiGe layers growth on Si(111)" 28a-Z-4, ?46?????????????, March 1999, ??????.
6 . H. Hibino, Y. Homma, N. C. Bartelt and T. Ogino; "Temperature dependence of hole shape on Si(111)" 28a-Z-5, ?46?????????????, March 1999, ??????.
7 . K. Sumotomo, Y. Kobayashi and T. Ogino; "In situ observation of interdiffusion between Ge thin film and Si(001) substrate using medium-energy ion scattering" 28p-Z-9, ?46?????????????, March 1999, ??????.
8 . N. Yamamoto, K. Sumitomo and K. Kishi; "Electrical evaluation of dry etching on the side wall of InP mesa structure (111)" 28p-ZC-6, ?46?????????????, March 1999, ??????.
9 . N. Nakamura, K. Shibuya, H. Kudo, K. Narumi, S. Yamamoto, H. Naramoto, S. Seki and K. Sumitomo; "Ion-beam shadowing for Si L-shell electrons measured with ion-induced electrons" 28a XK-9, 54th Annual Meeting, 28-31 March 1998, Hiroshima University, Higashi-Hiroshima Campus.
10. K. Sumitomo, H. Hibino, T. Fukuda, Y. Homma and T. Ogino; "Observation of incomplate surface melting of Si using medium-energy ion scattering" 15a-P3-2, The 59th Autumn Meeting, The Japan Society of Applied Physics, 15-18 September 1998, Hiroshima University.
11. K. Prabhakaran and T. Ogino; "Nitridation and oxynitridation reactions on patterned Si substrates : Evidence for pattern dependence" 28p-ZL-6, The 46th Spring Meeting, The Japan Society of Applied Physics and Related Societies, 28-31 March 1999, ??????.
12. K. Prabhakaran, K. Sumitomo and T. Ogino; "Silicidation and subsequent oxidation of SiGe epilayer grown on Si(100)" 15a-P3-14, The 59th Autumn Meeting, The Japan Society of Applied Physics, 15-18 September 1998, Hiroshima University.
13. H. Omi, Y. Kunii and T. Ogino; "Control of atomic step arrangements on a patterned Si(111) substrate through MBE (2) Orientational dependence-" 16a-YG-7, The 59th Autumn Meeting, The Japan Society of Applied Physics, 15-18 Sept. 1998, Hiroshima University.
14. H. Omi and T. Ogino; "Positioning of Ge islands on a patterned Si(111) surface by atomic step arrangement control" 28p-ZL-4, The 46th Spring Meeting, The Japan Society of Applied Physics and Related Societies, 28-31 March 1999, ??????.
15. H. Omi and T. Ogino; "Control of atomic step arrangements on a patterned Si(111) substrate by using MBE (3) Effect of SiGe compound formation-" 28p-ZL-5, The 46th Spring Meeting, The Japan Society of Applied Physics and Related Societies, 28-31 March 1999, ??????.
16. P. Finnie and Y. Homma; "Collisiond of Atomic Steps on Si(111) during Sublimation" Spring Meeting of Japan Society for Applied Physics, 28 March 1999, Chiba, Japan.
17. P. Finnie; "In situ observation of atomic step motion and interactions during the sublimation of Si(111)" Fall Meeting of Japan Society for Applied Physics, 30 Nov. 1998, Hiroshima.
18. P. Finnie and Y. Homma; "Dynamics
and interactions of Atomic Steps on Si(111) during Sublimation" Fall Meeting
of Japan Society for Applied Physics, Sept. 1998, Hiroshima, Japan.
19. T. Ogino, Y. Homma, H. Hibino, Y. Kobayashi,
K. Sumitomo, K. Prabhakaran and H. Omi, "Wafer-scale
control of nanostructures on Si by using
self-organization processes",
Surf. Sci. 19, 557 (1998), in Japanese.
- Paper
-
1 . T. Fukuda and T. Ogino;"Intial oxidation stage of the Ge(100) 2x1 surface studied by scanning tunneling microscopy and ultra-violet photoelectron spectroscopy" Appl. Surf. Sci. 130-132 (1998) P165.
2 . T. Ogino, Y. Homma, H. Hibino, Y. Kobayashi, K. Sumitomo, K. Prabhakaran and H. Omi; "Wafer-Scale Control of Nanostructures on Si by Using Self-Organization Processes" Hyomen Kagaku 19 (1998) p. 557.
3 . T. Ogino, H. Hibino, Y. Homma, Y. Kobayashi, K. Prabhakaran, K. Sumitomo and H. Omi; "Fabrication and Integration of Nanostructures on Si Surfaces" Acc. Chem. Res. 32 (1999) p. 447.
4 . Y. Homma, H. Hibino, N. Aizawa and T. Ogino; "Sublimation of a heavily boron-doped Si(111) surface" Phys. Rev. B 58 (1998) p. 13146.
5 . H. Yamaguchi and Y. Homma; "Imaging of layer by layer growth processes during molecular beam epitaxy of GaAs on (111)A substrates by scanning electron microscopy" Appl. Phys. Lett. 73 (1998) p. 3079.
6 . Y. Homma, P. Finnie and T. Ogino; "Aligned island formation using an array of step bands and holes on Si(111)" Appl. Phys. Lett. 74 (1999) p. 815.
7 . Y. Homma, H. Hibino and T. Ogino; "Sublimation of Si(111) surface observed by ultrahigh vacuum scanning electron microscopy" J. Vac. Soc. Jpn. 42 (1999) p. 79.
8 . Y. Homma; ・???SEM?????????????・ ????? 33 (1998) p. 82.
9 . Y. Homma; "Secondary electron imaging of nucleation and growth of semiconductors for nanostructure fabrication" Thin Solid Films 332 (1998) p. 262.
10 M. Suzuki, K. Mogi and Y. Homma; "Two-dimensional imaging of surface morphology by energy-analyzed secondary electrons and Auger electron spectroscopy for stepped Si(111) surfaces" J. Vac. Sci. Technol. A 16 3 (1998) p. 1122.
11. H. Hibino, K. Sumitomo and T. Ogino; "Growth process of twinned epitaxial layers on Si(111)?3×?3 -B and their thermal stability" Appl. Surf. Sci. 130-132 (1998) p. 41.
12. H. Hibino, K. Sumitomo and T. Ogino; "Twinned epitaxial layers formed on Si(111) ?3×?3 烹" J. Vac. Sci. Technol. A 16 3 (1998) p. 1934.
13. H. Hibino and T. Ogino; "Formation of twinned two-bilayer-high island during initial stages of growth on Si(111) ?3×?3 烹" Surf. Sci. 412/413 (1998) p. 132.
14. H. Hibino, Y. Homma and T. Ogino; "Triangular-tiled arrangement of 7×7 and "×1 domains on Si(111)" Phys. Rev. B 58 12 (1998) p. R7500.
15. H. Hibino, K. Sumitomo, T. Fukuda, Y. Homma and T. Ogino; "Disordering of Si(111) at high temperatures" Phys. Rev. B 58 19 (1998) p. 12 587.
16. K. Sumitomo, T. Nishioka and T. Ogino; "Dimer structures of Ge/Si(001) and Sb/Si(001) studied by medium-energy ion scattering" Appl. Surf. Sci. 130-132 (1998) p. 133.
17. A. Sakamoto, H. Kudo, T. Ishihara, S. Seki and K. Sumitomo; "Ion-induced electron emission form crystal targets with noncrystalline overlayers" NIM B 140 (1998) p. 47.
18. K. Prabhakaran and T. Ogino; "Multiperiod Si/SiO2/Ge layered structure formation through chemical bond manipulation" B-I/P36, European Material Research Society Spring Meeting (E-MRS), 16-19 June 1998, Congress Center, Strasbourg, France.
19. K. Prabhakaran, T. Matsumoto, T. Ogino and Y. Masumoto; "Fabrication of multiperiod Si/SiO2/Ge layered structure through chemical bond manipulation" Appl. Phys. Lett. 72 (1998) p. 3169,.
20. K. Prabhakaran, K. Sumitomo and T. Ogino; "Interaction of Co with SiGe epilayer grown on Si(100)" Surf. Sci. 421 (1999) p. 100.
21. K. Prabhakaran, Y. Kobayashi and T. Ogino; "Improved thermal stability of ultrathin silicon oxynitride layer due to nitrogen incorporation at the interface" Appl. Surf. Sci. 130 (1998) p. 182.
22. H. Omi and T. Ogino; "Seif-organization of Ge islands on high-index Si substrates" Phys. Rev. B 59 (1999) p. 7521.
23. H. Omi and T. Ogino; "Self-organization of nanoscale Ge island in Si/Ge/Si(113) multilayers" Appl. Surf. Sci. 130-132 (1998) p. 781.
24. P. Finnie and Y. Homma; "Island growth and surface roughness scaling of epitaxial GaAs on Si observed by situ scanning electron microscopy" Phys. Rev. B 59 (1999).
25. P. Finnie and Y. Homma; "Dynamics and Interactions of Atomic Steps on Si(111) in Sublimation" Phys. Rev. Lett. 82 (1999) p. 2737.
26. P. Finnis and Y. Homma; "Maskless Selective Area Molecular Beam Epitaxy of Semiconductors and Metals using Atomic Steps Network on Silicon" Journal of Crystal Growth, 201-202 (1999).
27. Y. Homma, P. Finnie and T. Ogino;
"Aligned island formation using an array of step bands and holes on Si(111)"
Appl. Phys. Lett. 74 (1999) p. 815.