Visitors to Low-Dimensional Nanomaterials Research Group and Their Seminars

(some talks were presented in Japanese)

2002

• 18 December
  Dr. Bingqing Wei (Dept. of Materials Science and Engineering, Rensselaer Polytechnic Institute)
  "Tailoring and Modification of Carbon Nanotube Architectures"
  
  
• 6 December
  Prof. E. Bauer (Arizona State University)
  "LEEM and SPELEEM studies of semiconductors and metal/semiconductor interfaces"
  
  
• 24 October
  Lecturer, Noboru Miura (Dept. of Electronics & Communications, School of Science & Technology, Meiji University)
  Student, Naofumi Kobayashi ( ditto )
  
  
• 11 October
  Mr. Yasuaki Totsuka (NEDO)
  
  
• 4 October
  Prof. Andrew Briggs (Department of Materials, Oxford University)
  
  
• 1 October
  Chief Researcher, Mark Baxendale (Centre for Basic, Thermal and Length Metrology, National Physical Laboratory)
  "The physics and applications of carbon nanotubes"
  
  
• 3 September
  A. Prof. Adarsh Sandhu (Tokyo Institute of Technology)
  "Room Temperature magnetic imaging of ferromagnetic domains by scanning micro-hall probe microscopy"
  

• 28 May
  Prof. Takanori Koshikawa (Osaka Electro-Communication University)
  "LEEM$B!&(BPEEM$B$K$h$kI=LL8&5f$H$=$NE8K>(B"

• 23 May
  Prof. Gustafsson (Dept. of Physics and Astronomy, Rutgers University, USA)
  "Medium energy ion scattering studies of thin films for microelectronic applications"
  

• 16 May
  Toshiaki Munakata (Rikagaku Institute)
  "Time-resolved photoemission microspectroscopy based on fs-VUV laser light"
  

• 5 March
  Prof. Ryouichi Itoh (School of Science & Technology, Meiji University )
  & 8 students
  

• 27 February
  Kazuhiko Hayashi (Semiconductor Energy Institute) &
  Ayahiko Ichimiya
  $B!VAv::%H%s%M%k82Hy6@$rMQ$$$?%7%j%3%sI=LL>e$N%7%j%3%s%J%N%a!<%?%*!<%@$N(B
  $B9=B$J*$N:n@.2aDx$HJx2u2aDx$N8&5f!W(B
  "Study on fabrication of nanometer-order structures on silicon surfaces and
  observation of their decay processes using scanning tunneling microscopy "
  

• 22 February
  A. Prof. Naoki Yamamoto (Phys. Dept., The Tokyo Institute of Technology) &
  V. Grillo ( - ditto - )
  "Cathodoluminescnce Study of Nano-structures in Semiconductor Epilayers"

• 29 January
  Dr. Stephane ODASSO (The National Institute for Material Sciences)

2001

• 20 December
  A.Prof.Mitsuhiro Katayama (Univ of Osaka, Graduate School)
  "Self-Organised phenomenon holding hydrogen on the surface and surfactant effects"
  

• 18 December
  Dr.Takashi Sekiguchi( Nano Material Laboratories)
  "Cathodoluminescence and its application to various semiconductors"
  Dr.Shigeo Tanuma( Nano Material Laboratories )
  "Calculations and measurements of electron inelastic mean free paths in solids"

• 28 November
  Dr. Satyaban Bhunia (University of Electrocommunication)
  "Fabrication of a GaInP/GaAs heterojunction bipolar transistor (HBT) by MOCVD"
  "Real-time study of MOCVD growth process by using synchrotron x-ray source"

• 22 November
  Ms. Berta Guzman (Ph.D student, Universidad Politecnica de Madrid)
  "SIMULATION OF SiO2 BUILD-UP IN SILICON UNDER OXYGEN BOMBARDMENT"
  Speaker:
  B.Guzman*, J.J.Serrano, J.M.Blanco, M.Aguilar, O.Ameziane
  Dpto. Tecnologia Electronica. Universidad Politecnica de Madrid. Spain.

• 17 October
  Dr. Yuden Teraoka  
  ( Synchrotron Radiation Research Center,Japan Atomic Energy Research Institute)
  "Oxidation Reaction Dynamics of Si(001) Surfaces Using Supersonic O2 Molecular Beams"

• 14 September
  Ms. Ruth Child
  "Tunable Mid-IR Emission using a Novel Quantum Dot-Quantum Well Coupled System"
  and"STM Study of Germanium Quantum Dots on Patterned Silicon Surfaces as a function of Growth Time"
  Mr. Damiano Giubertoni " Solid State Reaction in Ti-Si bilayers: New results from in situ measurement"
  
  

• 23 Febrary
  Prof. Zhaohui Zhangm visiting professor in our group, 1 April, 2000 - 28 Febrary, 2001.
  (Mesoscopic Physics National Laboratory and Department of Physics, Peking University)
  "Influences of the Si(113) Anisotropy on Ge Nanowire Formation and Related Island Shape Transition"
  
  
• 31 January
  Prof. Stoyan S. Stoyanov, visiting professor in our group, 1 Novenber, 2000 - 31 January, 2001.
  (Institute of Physical Chemistry, Bulgarian Academy of Sciences)
  "A Shape of the Steps at the Surface of Si  Crystal with SiO₂  Inclusions"
   
• 19 January
  Dr. Stefano FONTANA, (Sincrotrone Trieste ELETTRA, Italy)
  "The spectromicroscope of Elettra"
  
  
• 19 January
  Dr. Toshihisa Tomie, Electrotechnical Laboratory
  "Photoelectron micro-spectroscopy with a Laser-Plasma X-ray Source"
  
  
• 17 January
  Prof. Zhou (University of North Carolina, USA)
  "Materials Science of Carbon Nanotubes"

2000

• 1 November
  Prof. Robert L. White (Stanford University, the Center for Research on Information Storage Materials)
  "A Review of the Research at the Stanford Center for Research on Information Storage Materials"
  
  
• 25 August
  Dr. Pulickel M. Ajayan (Department of Materials Science & Engineering Rensselaer Polytechnic Institute)
  "Growth and Structure of Carbon Nanotubes"
  
  
• 13 July
  Dr. Matthew. P. Halsall, Lecturer ( Department of Physics, University of Manchester Institute of Science and Technology, UK. )
  " Si -Ge Self Assembled Quantum dots "
  
  
• 18 May
  Prof. Ernst Bauer (Arizona State Univ., USA)
  "SPELEEM"
  

1999

• 3 December
  Prof. John. Boland (  , USA )
  "" 

• 2 December
  Prof. T.-C. Shen (Utah State Univ,USA)
  "" 

• 21 September
  Prof. Madhavi Seetamraju ( India Inst. of Science)
  "Hot carrier transport in modulation doped Si/SiGe and Ge/SiGe suporlattice" 
  

• 20 September
  Prof. Kang L. Wang (UCLA, USA)
  "Self-Organized and Self Registered Ge Dots on Si and Their Postential Application"

• 2 July
  Prof. T. Kawamura (Yamanashi University)
  "Simulation of MBE growth by extended Monte Carlo method"

• 28 May
  Prof. Y. Shigeta (Faculty of Science, Yokohama City University)
  "Influence of surface structure on epitaxial growth"

• 10 May
  Dr. Kazushi Miki (Electrotechnical Laboratory)
  "Bismuth and Antimony Nanolines in Si Epitaxial Layer for Nanoelectronics Applications"

• 13 April
  Prof. Shinji Matsui (Himeji Institute of Technology)
  "Material-wave nanotechnology"

• 8 April
  Dr. Sangam Banerjee (SPring-8 - Japan Synchrotron Radiation Research Institute (JASRI))
  "Some new schemes to anaylse x-ray reflectivity data obtaned from thin single and multilayer films"

• 8 Feb.
  Dr. F. M. Ross (IBM T. J. Watson, USA)
  "Island Formation in Lattice-Mismatched Systems: Ge/Si(100) and CoSi2/Si(111)"
   
• 13 Jan.
  Prof. K. Tanaka (Waseda Univ., Japan)
  "Chemical Fabrication of Metal Surfaces by Adsorption and Reaction"
   
• 13 Jan.
  Prof. H. Tochihara (Kyusyu Univ., Japan)
  "Atomic Process during the `1x1` -7x7 Phase Transition on Si(111)"
   

•  26 October
  Prof. Ashok (Engineering Science The Pennsylvania State Univ., USA)
  "Hydrogen in Silicon : Defect Interactions and Applications"
   
•    9 October
  Dr. Yan Feng (Institute for Microstructural Sciences National Research Council, Canada)
  Part  I: "Grating-Assisted Surface Emitting Laser Transmitter with Image-Forming Capability"
  Part II: "Nanofabrication at NRC"
   
•    5 October
  Dr. V. Nayar (Defence Research Agency, UK)
  "Bonded Silicon Silicide on Insulator, a study of chemical, physical and optical properties for advanced device fabrication"
   
•    1 September
  Dr. M. Kudo (  , Japan)
  "  "
   
•  23 July
  Dr. A. Natori (  , Japan)
  "  "
   
•  19 June
  Dr. M. Kondo (ETL, Japan)
  "Interesting relationship between hydrogen atoms and Si low-temperature growth (Japanese)"
   
•   3 April
  Prof. P. Soukiassian (Univ. Paris-Sud/Orsay, France)
  "Silicon Carbide Surfaces and Interfaces: from Atomic Control to Self-Organized Si Atomic Lines"
   
•  1 April
  Prof. K. Hayakawa ( Hokkaido Univ., Japan)
  "Characterization of Surface Magnetism"
   
• 20 March
  Prof. T. Pearsall (Univ. Washington, USA)
  "Electron Mobility in Short-period Si-Ge Superlattices"
   
• 26 Feb.
  Dr. K. Barraclough, Dr. V. Nayar (Defence Research Agence, UK)
  "Perfect Silicon Surfaces, Reliable Measurements and the Impact of Surface Treatments"
   
• 25 Feb.
  Dr. G. A. D. Briggs (Oxford Univ., UK)
  "Gas Source MBE of Germanium on Silicon: the First Ten Monolayers"
   
• 29 Jan.
  Prof. F. Komori (Univ. Tokyo, Japan)
  "Photo-stimulated desorption on Cl adsorbed Si(111)7x7 surfaces (Japanese)"
   
• 19 Jan.
  Dr. C. C. Umbach (Cornell Univ., USA)
  "Mass Transport and Morphology Studied via the Smoothing of Microfabricated Periodic Structures"

• 17 Dec.
  Prof. A. V. Latyshev (Russian Academy of Sci., Russia)
  "Evolution of Stepped Silicon (111) Surface during DC heating"
   
• 7 Nov.
  Dr. T.-C. Shen (Beckman Inst., Univ. Illinois, USA)
  "Electronic Excitaion Channels on H-terminated Si(001)3x1 surface"
   
• 17 Oct.
  Prof. I. S. T. Tsong (Arisona State Univ., USA)
  "Mesoscopic striped phase on Si(001) studied by LEEM and STM"
   
• 19 Sep.
  Dr. P. Sen (Jawaharlal Nehru Univ., New Delhi, India)
  "Artivicial Defect Structures in Si by MeV Ion Irradiation"
   
• 1 April
  Prof. Ellen. D. Williams (Dep. Phys., Univ. Maryland, USA)
  "Evolution of Nanostructure via Step Motion"