国際会議招待講演一覧(2010年)
 
U. 量子電子物性関連
(1) H. Yamaguchi, I. Mahboob, H. Okamoto, and K. Onomitsu, "Micro/nanoelectromechanical systems for advanced semiconductor devices", 2010 International RCIQE/CREST Joint Workshop, Sapporo, Japan (Mar. 2010).
(2) Y. Ono, A. H. Khalafalla, K. Nishiguchi, and A. Fujiwara, "Single dopant effects in silicon nano transistors", Single Dopant Control (SDC2010), Leiden, Netherlands (Mar. 2010).
(3) Y. Ono, M. A. H. Khalafalla, K. Nishiguchi, and A. Fujiwara, "Single dopant effects in silicon nano transistors", The 2010 International Symposium on Atom-scale Silicon Hybrid Nanotechnologies for 'More-than-Moore' & 'Beyond CMOS' Era, Southampton, U.K. (Mar. 2010).
(4) A. Fujiwara, K. Nishiguchi, and Y. Ono, "Single-electron transfer technology using Si nanowire MOSFETs", The 2010 International Symposium on Atom-scale Silicon Hybrid Nanotechnologies for 'More-than-Moore' & 'Beyond CMOS' Era, Southampton, U.K. (Mar. 2010).
(5) K. Semba, "Manipulation of entanglement in the heterogeneous quantum system", 5th International Workshop on "Advances in Foundations of Quantum Mechanics and Quantum Information with Atoms and Photons" ad memoriam of Carlo Novero & the 3rd Italian Quantum Information Science Conference (V Quantum 2010 & 3rd IQIS2010), Torino, Italy (May 2010).
(6) H. Yamaguchi, I. Mahboob, H. Okamoto, and K. Onomitsu, "Challenge for electromechanical logic systems using compound semiconductor heterostructure", 2010 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2010), Tokyo, Japan (June 2010). (Plenary)
(7) Y. Okazaki, S. Sasaki, and K. Muraki, "Spin/pseudospin Kondo effect in a capacitively coupled parallel double quantum dot", 30th International Conference on the Physics of Semiconductors (ICPS2010), Seoul, Korea (July 2010).
(8) H. Yamaguchi, H. Okamoto, Y. Maruta, S. Ishihara, and Y. Hirayama, "Mechanical to electrical energy transduction using a micromechanical 2DES cantilever", 16th International Conference on Molecular Beam Epitaxy (MBE2010), Berlin, Germany (Aug. 2010).
(9) K. Kanisawa, "Structure of a single hydrogenic defect in a semiconductor quantum well", Gordon Research Conference: Defects in Semiconductors (GRC), New London, U.S.A. (Aug. 2010).
(10) H. Kageshima, H. Hibino, M. Nagase, Y. Sekine, and H. Yamaguchi, "Theoretical study on functions of graphene", The 2nd International Symposium on Graphene Devices: Technology, Physics, and Modeling (ISGD 2010), Sendai, Japan (Oct. 2010).
(11) H. Kageshima, "Mechanism of nanochannel formation processes: thermal oxidation of Si nanostructures and graphene formation on SiC", International Conference on Solid-State and Integrated Circuit Technology (ICSICT2010), Shanghai, China (Nov. 2010).
(12) H. Kageshima, H. Hibino, M. Nagase, Y. Sekine, and H. Yamaguchi, "Theoretical study on growth, structure, and physical properties of graphene on SiC", Japan-Korea Symposium on Surface and Nanostructure 9th (JKSSN9), Sendai, Japan (Nov. 2010).
(13) T. Yamaguchi, H. Yamaguchi, and T. Iyoda, "Graphoepitaxy of diblock copolymers for lithographic application", 23rd International Microprocesses and Nanotechnology Conference (MNC2010), Fukuoka, Japan (Nov. 2010).
(14) H. Yamaguchi, "Quantum effects of motion", Japanese-American Frontiers of Science (JAFoS2010), Chiba, Japan (Dec. 2010).
(15) K. Nishiguchi and A. Fujiwara, "Single-electron applications using nano-wire MOSFETs", 2010 Workshop on Innovative Devices and Systems (WINDS2010), Hawaii, U.S.A. (Dec. 2010).

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