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Tatsushi Akazaki was born in Kouchi Prefecture, Japan, on March 26, 1962. He received the B.S. and M.S. degrees in Physics from Kyushu University, Fukuoka, Japan, in 1984 and 1986, respectively. He joined NTT Basic Research Laboratories, Japan, in 1986, where he received the Ph.D degree in Engineering of electricity from the Osaka University in 1995.
Since 1986, he has been engaged in research on the transport properties of the semiconductor-coupled superconducting devices.
He is a member of the Physics Society of Japan and the Japan Society
of Applied Physics.
The transport properties of the semiconductor-coupled superconducting devices.
The fabrication and characterization of new semiconductor devices using III-V compounds
T. Akazaki, K. Arai, T. Enoki, and Y. Ishii
"Improved InAlAs/InGaAs HEMT Characteristics by Inserting an InAs layer into the InGaAs Channel," IEEE Electron Dev.Lett. 13, 325 (1992)
T. Akazaki, J. Nitta, H. Takayanagi, T. Enoki, and K. Arai
"Improving the mobility of an In0.52Al0.48As/In0.53Ga0.47As inverted modulation-doped structure by Inserting a strained InAs quantum well," Appl. Phys. Lett. 65, 1263 (1994).
T. Akazaki, H. Takayanagi, J. Nitta, and T. Enoki
"A Josephson field effect transistor using an InAs-inserted-channel In0.52Al0.48As/In0.53Ga0.47As inverted modulation-doped structure," Appl. Phys. Lett. 68, 418 (1996).
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