Graphene
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9
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Molecular beam epitaxial growth of graphene and ridge-structure networks of graphene,
Fumihiko Maeda and Hiroki Hibino, Journal of Physics D: Applied Physics 44, 435305 (2011). |
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8
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Study of graphene growth by gas-source molecular beam epitaxy using cracked ethanol: Influence of gas flow rate on graphitic material deposition,
Fumihiko Maeda and Hiroki Hibino, Japanese Journal of Applied Physics 50, 06GE12 (2011). |
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7
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Evaluation of Few-Layer Graphene Grown by Gas-Source Molecular Beam Epitaxy Using Cracked Ethanol,
Fumihiko Maeda, Hiroki Hibino, Ichiro Hirosawa, and Yoshio Watanabe, e-J. Surf. Sci. Nanotech. Vol. 9 (2011) 58-62. |
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6
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Thin Graphitic Structure Formation on Various Substrates by Gas-Source Molecular Beam Epitaxy Using Cracked-Ethanol,
Fumihiko Maeda and Hiroki Hibino, Japanese Journal of Applied Physics 49, 04DH13 (2010). |
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5
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Growth of few-layer graphene by gas-source molecular beam epitaxy using cracked ethanol,
Fumihiko Maeda and Hiroki Hibino, Physica Status Solidi B 247, 916-920 (2010). |
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4
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Dependence of electronic properties of epitaxial few-layer graphene on the number of layers investigated by photoelectron emission microscopy,
H. Hibino, H. Kageshima, M. Kotsugi, F. Maeda, F.-Z. Guo, and Y. Watanabe, PHYSICAL REVIEW B 79, 125437 (2009). |
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3
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Two-dimensional emission patterns of secondary electrons from graphene layers formed on SiC(0001) ,
H. Hibino, H. Kageshima, F.-Z. Guo, F. Maeda, M. Kotsugi and Y. Watanabe, Applied Surface Science 254, 7596-7599 (2008). |
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2
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Microscopic thickness determination of thin graphite films formed on SiC from quantized oscillation in reflectivity of low-energy electrons,
H. Hibino, H. Kageshima, F. Maeda, M. Nagase, Y. Kobayashi, and H. Yamaguchi, PHYSICAL REVIEW B 77, 075413 (2008). |
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1
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Thickness determination of graphene layers formed on SiC using low-energy electron microscopy,
H. Hibino, H. Kageshima, F. Maeda, M. Nagase, Y. Kobayashi, Y. Kobayashi, and H. Yamaguchi, e-J. Surf. Sci. Nanotech. Vol. 6, 107-10 (2008). |
Carbon nanotube
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10
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Carbon Nanotube Growth from C60-Fullerene-Induced Giant Cage Structures, Daisuke Takagi, Fumihiko Maeda, Hiroki Hibino, Yoshihiro Kobayashi, and Yoshikazu Homma, submitted to Journal of the American Chemical Society (2010). |
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9
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Oxide-mediated formation of α-FeSi2 on Si(001) studied by x-ray adsorption near edge structure analysis using SPELEEM, Fumihiko Maeda, Hiroki Hibino, Satoru Suzuki, and FangZhun Guo, Surf. Interface Anal. 40, 1747 (2008). |
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8
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Hydrogen adsorption on single-walled carbon nanotubes studied by core-level photoelectron spectroscopy and Raman spectroscopy, A. Tokura, F. Maeda, Y. Teraoka, A. Yoshigoe, D. Takagi, Y. Homma, Y. Watanabe, Y. Kobayashi, CARBON 46, 1903 (2008). |
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7
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Proper Combination of Catalyst Materials and Ethanol for High Yield in CVD Growth of Carbon Nanotubes, Fumihiko Maeda, and Yoshihiro Kobayashi, Mater. Res. Soc. Symp. Proc. Vol. 1081 (2008) 1081-P01-03. |
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6
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Surface Reactions of Metal Catalysts for Carbon Nanotubes on an Oxide Thin Layer/Si Substrates Studied by in-situ Micro X-ray Adsorption Spectroscopy using SPELEEM, Fumihiko Maeda, Hiroki Hibino, Satoru Suzuki, FangZhun Guo, and Yoshio Watanabe, Mater. Res. Soc. Symp. Proc. Vol. 967 (2007) 0967-U05-03. |
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5
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Surface Reactions of Metal Catalysts in Ethanol-CVD Ambient at Low-Pressure Studied by in-situ Photoelectron Spectroscopy, Fumihiko Maeda, Satoru Suzuki, Yoshihiro Kobayashi, Daisuke Takagi, and Yoshikazu Homma, Mater. Res. Soc. Symp. Proc. Vol. 963 (2007) 0963-Q05-04. |
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4
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Reaction Products of Co Catalysts in Ethanol-Chemical-Vapor-Deposition Ambient at Low-Pressure Studied by in situ X-Ray Photoelectron Spectroscopy, Fumihiko Maeda, Satoru Suzuki, Yoshihiro Kobayashi, Daisuke Takagi, and Yoshikazu Homma, Japanese Journal of Applied Physics Vol. 46, No. 7 (2007) pp. L148-L150. |
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3
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Surface Reactions of Co on SiO2 thin layer/Si substrate Studied by LEEM and PEEM, Fumihiko Maeda, Hiroki Hibino, Satoru Suzuki, Yoshihiro Kobayashi, Yoshio Watanabe, and FangZhun Guo, e-Journal of Surface Science and Nanotechnology, Vol. 4 155-160 (2006). |
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2
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Surface and Interface Reactions of Catalysts for Carbon Nanotube Growth on Si Substrates Studied by Soft X-ray Photoelectron Spectroscopy, F. Maeda, E. Laffosse, Y. Watanabe, S. Suzuki, Y. Homma, M. Suzuki, T. Kitada, T. Ogiwara, A. Tanaka, M. Kimura, V. A. Mihai, H. Yoshikawa, and S. Fukushima, PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES 24 (1-2): 19-25 AUG (2004). |
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1
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Electronic structure of single-walled carbon nanotubes encapsulating potassium,
Satoru Suzuki, Fumihiko Maeda, Yoshio Watanabe, and Toshio Ogino, PHYSICAL REVIEW B 67, 115418 (2003). |
Realtime Analysis by Time-Resolved Core-Level Photoelectron Spectroscopy
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11
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Time-resolved core-level photoelectron spectroscopy and reflection high-energy electron diffraction study of surface phase transition on GaAs(001), Fumihiko Maeda and Yoshio Watanabe, Applied Surface Science (1-4): 224-229 OCT 15 (2004). |
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10
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Real-time analysis of a surface phase transition of GaAs(001) by core-level photoelectron spectroscopy and photoelectron diffraction, Fumihiko Maeda and Yoshio Watanabe, Journal of Electron Spectroscopy and Related Phenomena, 137: 107-112 Sp. Iss. SI JUL (2004). |
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9
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Real-time analysis of alternating growth on GaAs(001) by core-level photoelectron spectroscopy, F. Maeda and Y. Watanabe, Applied Surface Science 162: 319-325 (2000). |
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8
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Sb desorption from Sb/GaAs(001) and GaSb(001) analyzed by core-level phtoelectron spectroscopy, F. Maeda and Y. Watanabe, Journal of Electron Spectroscopy and Related Phenomena, 101-103, 293-298 (1999) . |
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7
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Time-Resolved Core-level Photoelectron Spectroscopy on Sb-Terminated GaAs(001) under Sb Supply Control at Growth Temperature, F. Maeda and Y. Watanabe, Journal of Electron Spectroscopy and Related Phenomena 88-91, 779-785 (1998). |
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6
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Realtime Analysis for MBE by Time-Resolved Core-Level Photoelectron Spectroscopy, F. Maeda, Y. Watanabe, and M. Oshima, Journal of Synchrotron Radiation 5, 1026-1028 (1998). |
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5
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Realtime observation of alternating growth on GaSb(001) by using core-level photoelectron spectroscopy, F. Maeda, Y. Watanabe, and M. Oshima, Applied Surface Science 112, 69-74 (1997) . |
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4
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Realtime analysis on GaSb(001) during Sb-desorption by core-level photoelectron spectroscopy, F. Maeda, Y. Watanabe, and M. Oshima, Physical Review Letters 78, 4233-4236 (1996). |
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3
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GaSb-growth study by realtime crystal growth analysis system using synchrotron radiation photoelectron spectroscopy, F. Maeda, Y. Watanabe, Y. Muramatsu, and M. Oshima, Japanese Journal of Applied Physics 35, 4457-4462 (1996). |
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2
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Control of surface bonding by realtime monitoring using synchrotron radiation photoelectron spectroscopy, F. Maeda, Y. Watanabe, and M. Oshima, CONTROL OF SEMICONDUCTOR INTERFACES I. Odomari, M. Oshima, and A. Hiraki, Elsevier Science B.V. 127-132 (1994). |
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1
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A VUV beamline (ABL-3B) for real-time photoelectron spectroscopy at the NTT synchrotron radiation facility, Y. Muramatsu, F. Maeda, S. Maeyama, Y. Watanabe, and M. Oshima, Nuclear Instruments & Methods in Physics Reasearch A 342, 596-599 (1994). |
Sb-terminated GaAs(001)
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6
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Sb-induced reconstruction on Sb-terminated GaAs(001), F. Maeda and Y. Watanabe, Physical Review B, 60, 10652-10655 (1999). |
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5
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Surface termiantion of GaAs(001) by Sb-dimers, F. Maeda, Y. Watanabe, and M. Oshima, Surface Science 357/358, 540-544 (1996). |
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4
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X-ray Standing Wave Study of Sb-terminated GaAs(001)-2x4 Surface, M. Sugiyama, S. Maeyama, F. Maeda, M. Oshima, Physical Review B 52, 2678-2681 (1995). |
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3
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Initial stages of Ag growth on Sb-terminated GaAs(001), F. Maeda, Y. Watanabe, and M. Oshima, Journal of Crystal Growth 150, 1164-1168 (1995). |
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2
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Surface reactions of Ga and As on Sb-terminated GaAs(001), F. Maeda, Y. Watanabe, and M. Oshima, Applied Surface Science 82/83, 276-283 (1994). |
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1
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Sb-induced surface reconstruction on GaAs(001), F. Maeda, Y. Watanabe, and M. Oshima, Physical Review B 48, 14733-14736 (1993). |
Clean surface and In-induced reconstruction on GaSb(001)
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3
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GaSb(001) 4x2-In surface structure studied by core-level photoelectron spectroscopy and x-ray standing-wave analysis, F. Maeda, M. Sugiyama, and Y. Watanabe, Japanese Journal of Applied Physics 39 (7B): 4351-4354 JUL 2000. |
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2
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In-induced surface reconstruction on GaSb(001), Maeda F , Sugiyama M, Watanabe Y, PHYSICAL REVIEW B 62 (3): 1615-1618 JUL 15 2000. |
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1
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Photoelectron Spectroscopy on Reconstructed GaSb(001), F. Maeda, Y. Watanabe, and M. Oshima, Journal of Electron Spectroscopy and Related Phenomena 80, 225-228 (1996). |
Se- or S- passivation of III-V compund
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16
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Work function change of GaAs surfaces induced by Se treatment, S. Suzuki, F. Maeda and Y. Watanabe, Japanese Journal of Applied Physics, 38, 5847-5850 (1999). |
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15
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Anomalous downward band bending induced by selenium passivation of MBE-grown InAs(001) surfaces, Y. Watanabe and F. Maeda, Applied Surface Science 117/118, 753-738 (1997). |
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14
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Work function change of GaAs surfaces induced by Se treatment, S. Suzuki, F. Maeda and Y. Watanabe, Japanese Journal of Applied Physics, 38, 5847-5850 (1999). |
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13
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Synchrotron radiation photoelectron spectroscopy study of bonding at heterointerfaces between InAs nanocrystals and Se-terminated GaAs, Y. Watanabe, F. Maeda, and M. Ohisma, Journal of Electron Spectroscopy and Related Phenomena 80, 221-224 (1996). |
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12
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Formation of InSb nanocrystals on Se-terminated GaAs(001), Y. Watanabe, F. Maeda, and M. Oshima, Journal of Crystal Growth 150, 863-867 (1995). |
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11
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A Photoemission Study of Al and Au Overlayers on Se/GaAs(001), T. Scimeca, Y. Watanabe, F. Maeda, and M. Oshima, Hyoumen Kagaku 16, 326-333 (1995). |
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10
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Comparative study between MEE- and MBE-grown InSb-nanocrystals on Se-terminated GaAs(001), Y. Watanabe, F. Maeda, and M. Oshima, Applied Surface Science 82/83, 136-140 (1994). |
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9
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Selective, Maskless Growth of InSb on Selenium-Treated GaAs by Molecular Beam Epitaxy, Y. Watanabe, T. Scimeca, F. Maeda, and M. Oshima, Japan Journal of Applied Physics 33, 698-701 (1994). |
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8
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Surface oxidation of selenium treated GaAs(001), T. Scimeca, Y. Watanabe, F. Maeda, R. Berrigan, and M. Oshima, Journal of Vacuum Science and Technology B 12, 3090-3094 (1994). |
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7
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Nanocrystal growth of InSb on Se-passivated GaAs, Y. Watanabe, F. Maeda, and M. Oshima, CONTROL OF SEMICONDUCTOR INTERFACES I. Odomari, M. Oshima, and A. Hiraki, Elsevier Science B.V. 167-168 (1994). |
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6
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Two-Dimesional Arrangement of InSb Epitaxial Nanoscale Crystals on Selenium-Treated Terraced GaAs Substrates, Y. Watanabe, F. Maeda, and M. Oshima, Springer Series in Materials Science 31, "Nanostructures and Quantum Effects" Editors: H. Sakaki and H. Noge, Springer-Verlag Berlin Heidelbelg, 242-247 (1994). |
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5
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Synchrotron Radiation and materials for functional interface (in Japanese), M. Oshima, T. Maeyama, Y. Watanabe, and F. Maeda, NTT R&D 43, 47-54 (1994). |
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4
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Novel method for rejuvenating and fabricating stable Se/GaAs surface, T. Scimeca, K. Prabhakaran, Y. Watanabe, F. Maeda, and M. Oshima, Applied Physics Letters 63, 1807-1808 (1993). |
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3
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Surface structure of Se-treated GaAs(001) from angle-resolved analysis of core-level photoelectron spectra, F. Maeda, Y. Watanabe, T. Scimeca, and M. Oshima, Physical Review B 48, 4956-4959 (1993). |
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2
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Controlled passivation of GaAs by Se treatment, T. Scimeca, Y. Watanabe, F. Maeda, R. Berrigan, and M. Oshima, Applied Physics Letters 62, 1667-1669 (1993). |
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1
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Surface chemical bonding of (NH4)2Sx-treated InP(001), F. Maeda, Y. Watanabe, and M. Oshima, Applied Physics Letters 62, 297-299 (1993). |
Superconducting cuprate surfaces
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9
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Photoelectron Spectroscopy of EuBa2Cu3O7-y Thin Films Surfaces Treated by Electron Cyclotron Resonance Oxygen Ion Beam, H. Asano, M. Suzuki, T. Kiyokura, F. Maeda, A. Menz, Y. Watanabe, and M. Oshima, Japan Journal of Applied Physics 34, L433-L-436 (1995). |
8
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Wataer-Immersion-Induced Surface Reactions of EuBa2Cu3Oy Thin Films, T. Kiyokura, F. Maeda, Y. Watanabe, M. Oshima, H. Asano, and M. Suzuki, Japan Journal of Applied Physics 34, 1396-1400 (1995). |
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7
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Initial stages of InAs deposition on SrF2-coated EuBa2Cu3O7-y thin-film superconductors, Y. Watanabe, F. Maeda, M. Oshima, and O. Michimkami, Journal of Applied Physics 74, 5212-5216 (1993). |
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6
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MBE growth of InAs and InSb on EuBa2Cu3O7-y superconducting films, Y. Watanabe, F. Maeda M. Oshima, and O. Michimkami, Journal of Crystal Growth 127 672-677 (1993). |
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5
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Growth of InAs on EuBa2Cu3O7-y superconducting thin films with SrF2 intelayers, Y. Wtanabe, F. Maeda, M. Oshima, and O. Michikami, Applied Physics Letters 61, 979-981 (1992). |
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4
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The effects of AsOx and SrF2 interlayer on GaAs growth over EuBa2Cu3O7-y (001), F. Maeda, Y. Watanabe, M. Oshima, and O. Michikami, Surface Science 269/270, 1096-1100 (1992). |
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3
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Initial stages of Ga and As growth on EuBa2Cu3O7-y(001), F. Maeda, H. Sugahara, M. Oshima, and O. Michikami, Applied Physics Letters 59, 363-365 (1991). |
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2
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Synchrotron Radiation Photoelectron Spectroscopy on Single Crystal Oxide superconductor Bi-Sr-Ca-Cu-O (in Japanese), F. Maeda, T. Kawamura, M. Oshima, and Y. Hidaka, NTT R&D 38, 1359-1368 (1989). |
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1
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Synchrotron Radiation Photoelectron Spectroscopy of High-Tc Superconductor Bi-Sr-Ca-Cu-O Single Crystals, F. Maeda, T. Kawamura, M. Oshima, Y. Hidaka, and A. Yamaji, Japanese Jounal of Applied Physics 28, L361-L363 (1989). |
Surface electronic properties of GaAs
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5
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Observation of Ga 3d two-hole states from GaAs surfaces , Suzuki S, Kiyokura T, Maeda F , Nath KG, Watanabe Y, Saitoh T, Kakizaki A, JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA 114: 421-425 MAR 2001 . |
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4
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Resonant photoemission spectroscopy of Ga 3d two-hole states of GaAs, Suzuki S , Kiyokura T, Maeda F , Nath KG, Watanabe Y, Saitoh T, Kakizaki A, JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN 69 (6): 1807-1811 JUN 2000. |
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3
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Relaxation of band bending on GaAs(001) surface by controlling the crystal defects near the surface, Y. Hirota, Y. Watanabe, F. Maeda, and T. Ogino, Applied Surface Science 117/118, 619-623 (1997). |
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2
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Surface Fermi level control of GaAs(001) by controlling vacancy near the surface (in Japanese), Y. Hirota, Y. Watanabe, F. Maeda, and T. Ogino , Hyoumen Kagaku,18, 45-52 (1997). |
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1
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Shift of surface Fermi level position toward the conduction band minimum by crystal defects near GaAs(001) surface, Y. Hirota, F. Maeda, Y. Watanabe, and T. Ogino, Journal of Applied Physics 82, 1661-1666 (1997). |
Beamline construction and Micro-area photoelectron spectroscopy apparatus
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6
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Beamline for angle-resolved photoemission spectroscopy at low-temperature constructed at NTT Atsugi R&D Center, Suzuki S, Yamamoto H, Maeda F, Watanabe Y, Yamada K, and Kiyokura T, JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA 144: 1109-1112 Sp. Iss. SI JUN (2005). |
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5
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Performance of the high-resolution high-flux monochromator for bending magnet beamline BL-1C at the Photon Factory, Ono K, Oh JH, Horiba K, Mizuguchi M, Oshima M, Kiyokura T, Maeda F , Watanabe Y, Kakizaki A, Kikuchi T, Yagishita A, Kato H, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT 467: 573-576 Part 1 JUL 21 2001. |
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4
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Throughput measurement of a multilayer-coated Schwarzschild objective using synchrotron radiation, Kiyokura T, Maeda F , Watanabe Y, Iketaki Y, Nagai K, Horikawa Y, Oshima M, Shigemasa E, Yagishita A , OPTICAL REVIEW 7 (6): 576-578 NOV-DEC 2000. |
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3
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Photoelectron Microspectroscopy Observations of a Cleavage Surface of Semiconductor Double Heterostructure, T. Kiyokura, F. Maeda, Y. Watanabe, Y. Kadota, Y. Iketaki, Y. Horikawa, M. Oshima, E. Shigemasa, and A. Yagishita, Journal of Vaccum Science & Technolog A 16, 1086-1090 (1998). |
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2
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Submicrometre-area high-energy-resolution photoelectron spectroscopy system, T.Kiyokura, F. Maeda, Y. Watanabe, E. Shigemasa, A. Yagishita, M. Oshima, Y. Iketaki, and Y. Horikawa, Journal of Synchrotron Radiation 5, 1111-1113 (1998). |
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1
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Optical design for a bending -magnet beamline based on a varied-line-spacing plane grating, T. Kiyokura, F. Maeda, and Y. Watanabe, Journal of Synchrotron Radiation 5, 572-574 (1998). |
Other topices
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11
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Electronic and surface properties of H-terminated diamond surface affected by NO2 gas, M. Kubovic, M. Kasu, H. Kageshima, F. Maeda, DIAMOND AND RELATED MATERIALS 19, 889-893 (2010). |
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10
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Passivation-mediated growth of Co on Se, S and O rich GaAs surfaces: A potential approach to control interface crystallinity and magnetic continuity, Nath KG, Maeda F , Suzuki S, Watanabe Y, JOURNAL OF APPLIED PHYSICS 91 (6): 3943-3945 MAR 15 2002. |
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9
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Modified epitaxy in Co/S/GaAs(001) and comparison with Co/GaAs(001) , Nath KG, Maeda F , Suzuki S, Watanabe Y, JOURNAL OF APPLIED PHYSICS 90 (3): 1222-1226 AUG 1 2001. |
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8
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Surfactant-mediated control of surface morphology for Co epitaxial film on S-passivated semiconducting substrate, Nath KG, Maeda F , Suzuki S, Watanabe Y, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 19 (2): 384-387 MAR-APR 2001. |
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7
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Epitaxy, modification of electronic structures, overlayer-substrate reaction and segregation in ferromagnetic Co films on Se-treated GaAs(001) surface , Nath KG, Maeda F , Suzuki S, Watanabe Y , Japanese Journal of Applied Physics 39 (7B): 4571-4574 JUL 2000 . |
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6
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Distinctly different thermal decomposition pathway of ultrathin oxide layer on Ge and Si, K. Prabhakaran, F. Maeda, Y. Watanabe, and T. Ogino, Applied Physic Letters 76 (16): 2244-2246 APR 17 2000. |
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5
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Thermal decomposition pathway of Ge and Si oxides : Observation of a distinct difference, K. Prabhakaran, F. Maeda, Y. Watanabe, and T. Ogino, Thin Solid FilmsTHIN SOLID FILMS 369 (1-2): 289-292 JUL 3 2000. |
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4
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Effect of strain on the chemical bonds in InAs nanocrystals self-organized on GaAs and Se-terminated GaAs surfaces, Y. Watanabe and F. Maeda, Applied Surface Science 162: 625-629 AUG 2000. |
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3
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SR Aplications, T. Hosokawa, J. Takahashi, H. Akazawa, F. Maeda, and T. Haga, NTT Review 10, 70-78 (1998). |
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2
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Applicaiton of Synchrotron Radiation to Surface and Interface Characterization, Y. Watanabe, S. Maedaya, F. Maeda, and M. Sugiyama, NTT Review 8, 60-69 (1996) . |
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1
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Applicaiton of Synchrotron Radiation to Surface and Interface Characterization (in Japanese), Y. Watanabe, S. Maedaya, F. Maeda, and M. Sugiyama, NTT R&D 45, 277-284 (1996). |