A. Original Papers
  1. "RHEED Intensity Oscillation during Epitaxial Growth of Layered Materials",
    T. Shimada, H. Yamamoto, K. Saiki, and A. Koma, Jpn. J. Appl. Phys. 29 (1990) L2096.

  2. "Improved heteroepitaxial growth of layered NbSe2 on GaAs(111)B",
    H. Yamamoto, K. Yoshii, K. Saiki, and A. Koma, J. Vac. Sci. Technol. A12 (1994) 125.

  3. "Surface Determination of Ultrathin NbSe2 Films by Grazing Incidence X-ray Diffraction",
    T. Shimada, Y. Furukawa, E. Arakawa, K. Takeshita, T. Matsushita, H. Yamamoto, and A. Koma, Solid. State. Commun. 89 (1994) 583.

  4. "Epitaxial growth of metal-phthalocyanines on selenium-terminated GaAs(111) surfaces",
    H. Yamamoto, H. Tada, T. Kawaguchi, and A. Koma, Appl. Phys. Lett. 64 (1994) 2099.

  5. "Superconductivity and electrical properties in single-crystalline ultrathin Nb films grown by molecular-beam epitaxy",
    K. Yoshii, H. Yamamoto, K. Saiki, and A. Koma, Phys. Rev. B 52 (1995) 13570.

  6. "Van der Waals epitaxy of metal dihalide",
    T. Ueno, H. Yamamoto, K. Saiki, and A. Koma, Appl. Surf. Sci. 113/114 (1997) 33.