略歴

• NTT物性科学基礎研究所主任研究員、横浜市立大学大学院生命ナノシステム科学研究科連携大学院客員教授、慶應義塾大学大学院理工学研究科非常勤講師。
• 1997 Fall Meeting of the Materials Research Society Best Poster Paper Award受賞。第22回応用物理学会論文賞(2000年度)JJAP論文賞受賞。
• 日本物理学会会員、応用物理学会会員。Tokyo Ab-initio Program Package (TAPP) コンソーシアムメンバー。応用物理学会代議員、応用物理学会シリコンテクノロジ分科会業務幹事、応用物理学会薄膜・表面物理分科会幹事、IWDTF2013 program comittee chair、ゲートスタック研究会実行委員。

研究分野

• エレクトロニクスのための新規材料と機能の探索
• 半導体デバイスの材料と加工の物理
• 表面・界面・ドーパント・ナノ構造における物理
• 電子状態に基づく新しい計算物理的手法の開発

Researcher ID情報

論文

• Hiroyuki Kageshima and Akira Fujiwara, "First-principles study of silicon-based nanocapacitors", Phys. Rev. B, in print.
• Hiroyuki Kageshima, Hiroki Hibino, and Shinichi Tanabe, "Physics of Epitaxial Graphene on SiC(0001)", J. Phys. Cond. Mat., in print.
• Hiroki Hibino, Shinichi Tanabe, and Hiroyuki Kageshima, "Growth and electronic transport properties of epitaxial graphene grown on SiC", J. Phys. D, in print.
• Shinichi Tanabe, Yoshiaki Sekinie, Hiroyuki Kageshima, and Hiroki Hibino, "Electrical Characterization of Bilayer Graphene Formed by Hydrogen Intercalation of Monolayer Graphene on SiC(0001)", Jpn. J. Appl. Phys. 51, 02BN02-1-3 (2012).
• Yukinori Ono, Yasuaki Miyazaki, Shin Yabuuchi, Hiroyuki Kageshima, Masao Nagase, Akira Fujiwara, and Eiji Ohta, "Significance of the interface regarding magnetic properties of manganese nanosilicide in silicon", Thin Solid Films 519, 8505-8508 (2011).
• Shinichi Tanabe, Yoshiaki Sekine, Hiroyuki Kageshima, Masao Nagase, and Hiroki Hibino, "Carrier transport mechanism of graphene on SiC(0001)", Phys. Rev. B 84, 115458-1-5 (2011).
• Hiroyuki Kageshima, Hiroki Hibino, Hiroshi Yamaguchi, and Masao Nagase, "Theoretical Study on Epitaxial Graphene Growth by Si Sublimation from SiC(0001) Surface", Jpn. J. Appl. Phys. 50, 095601-1-6 (2011).
• Hiroyuki Kageshima, Hiroki Hibino, Masao Nagase, Yoshiaki Sekine, and Hiroshi Yamaguchi, "Theoretical study on magnetoelectric and thermoelectric properties for graphene devices", Jpn. J. Appl. Phys. 50, 070115-1-5 (2011).
• Shinichi Tanabe, Yoshiaki Sekine, Hiroyuki Kageshima, Masao Nagase, and Hiroki Hibino, "Observation of bandgap in epitaxial bilayer graphene field effect transistors", Jpn. J. Appl. Phys. 50, 04DN04-1-4 (2011).
• Masato Inoue, Yoshihiro Kangawa, Katsunori Wakabayashi, Hiroyuki Kageshima, and Koichi Kakimoto, "Tight-binding approach to initial stage of graphitization process on vicinal SiC surface ", Jpn. J. Appl. Phys. 50, 038003-1-2 (2011).
• Jinichiro Noborisaka, Katsuhiko Nishiguchi, Yukinori Ono, Hiroyuki Kageshima, and Akira Fujiwara, "Strong Stark effect in electroluminescence from phosphorous-doped silicon-on-insulator metal-oxide-semiconductor field-effect transistors", Appl. Phys. Lett. 98, 033503-1-3 (2011).
• Hiroyuki Kageshima, Hiroki Hibino, Masao Nagase, Yoshiaki Sekine, and Hiroshi Yamaguchi, "Atomic Structure and Physical Properties of Epitaxial Graphene Islands embedded in SiC(0001) Surfaces", Appl. Phys. Express 3, 115103-1-3 (2010).
• Hiroyuki Kageshima, "Study of Thermoelectric Properties of Graphene", Jpn. J. Appl. Phys. 49, 100207-1-3 (2010).
• Michal Kubovic, Makoto Kasu, Hiroyuki Kageshima, and Fumihiko Maeda, "Electronic and surface properties of H-terminated diamond surface affected by NO2 gas", Diamond Related Materials 19, 889-893 (2010).
• Hiroki Hibino, Hiroyuki Kageshima, and Masao Nagase, "Epitaxial few-layer graphene: toward single crystal growth", J. Phys. D: Appl. Phys. 43, 374005-1-14 (2010).
• Shinichi Tanabe, Yoshiaki Sekine, Hiroyuki Kageshima, Masao Nagase, and Hiroki Hibino, "Half-integer quantum Hall effect in gate-controlled epitaxial graphene devices", Appl. Phys. Exp. 3, 075102-1-3 (2010).
• Hiroyuki Kageshima and Akira Fujiwara, "Dielectric constants of atomically thin silicon channels with double gate", Appl. Phys. Lett. 96, 193102-1-3 (2010).
• Masao Nagase, Hiroki Hibino, Hiroyuki Kageshima, and Hiroshi Yamaguchi, "Contact conductance measurement of partially suspended graphene on SiC", Appl. Phys. Exp. 3, 045101-1-3 (2010).
• Jinichiro Noborisaka, Katsuhiko Nishiguchi, Hiroyuki Kageshima, Yukinori Ono, and Akira Fujiwara, "Tunneling spectroscopy of electron subbands in thin silicon-on-insulator metal-oxide-semiconductor field-effect transistors", Appl. Phys. Lett. 96, 112102-1-3 (2010).
• Michal Kubovic, Makoto Kasu, Hiroyuki Kageshima, and Fumihiko Maeda, "Sorption properties of NO2 gas and its strong influence on hole concentration of H-terminated diamond surfaces", Appl. Phys. Lett. 96, 052101-1-3 (2010).
• Hiroyuki Kageshima, Hiroki Hibino, and Masao Nagase, "Epitaxial Graphene Growth Studied by Low-energy Electron Microscopy and First-principles", Materials Science Forum 645-648, 597-602 (2010).
• Hiroyuki Kageshima and Makoto Kasu, "Origin of Schottky Barrier Modification by Hydrogen on Diamond", Jpn. J. Appl. Phys. 48, 111602-1-5 (2009).
• Masao Nagase, Hiroki Hibino, Hiroyuki Kagashima, and Hiroshi Yamaguchi, "Local Conductance Measurements of Double-layer Graphene on SiC substrate", Nanotechnol. 20, 445704-1-6 (2009).
• Hiroki Hibino, Seigi Mizuno, Hiroyuki Kageshima, Masao Nagase, and Hiroshi Yamaguchi, "Stacking domains of epitaxial few-layer graphene on SiC(0001)", Phys. Rev. B 80, 085406-1-6 (2009).
• Hiroo Omi, Hiroyuki Kageshima, Tomoaki Kawamura, Masashi Uematsu, Yoshihiro Kobayashi, Seiji Fujikawa, Yoshoyuki Tsusaka, Yasushi Kagoshima, and Junji Matsui, "Stability-instability transition of reaction fronts in thermal silicon oxidation", Phys. Rev. B 79, 245319-1-6 (2009).
• Michal Kubovic, Makoto Kasu, Yoshiharu Yamauchi, Kenji Ueda, and Hiroyuki Kageshima, "Structural and Electrical Properties of hydrogen-terminated Diamond Field-effect Transistor", Diamond Related Materials 81, 796-799 (2009).
• Hiroyuki Kageshima, Hiroki Hibino, Masao Nagase and Hiroshi Yamaguchi, "Theoretical Study of Epitaxial Graphene Growth on SiC(0001) Surfaces", Appl. Phys. Exp. 2, 065502-1-3 (2009).
• Hiroki Hibino, Hiroyuki Kageshima, Masato Kotsugi, Fumihiko Maeda, F.-Z. Guo, and Yoshio Watanabe, "Dependence of electronic properties of epitaxial few-layer graphene on the number of layers investigated by photoelectron emission microscopy", Phys. Rev. B 79, 125437-1-7 (2009).
• Satoru Ohno, Yojiro Oba, Shin Yabuuchi, Tetsuya Sato and Hiroyuki Kageshima, "Magnetism of single-walled carbon nanotube with Pd nanowire", J. Phys. Soc. Japan 77, 104713-104718 (2008).
• Masao Nagase, Hiroki Hibino, Hiroyuki Kageshima, and Hiroshi Yamaguchi, "In-plane conductance measurement of graphene nanoisland using integrated nanogap probe", Nanotechnologies 19, 495701-1-6 (2008).
• Hiroyuki Kageshima and Akira Fujiwara, "First-principles study on inversion layer properties of double-gate atomically thin silicon channels", Appl. Phys. Lett. 93, 043516-1-3 (2008).
• Shin Yabuuchi, Hiroyuki Kageshima, Yukinori Ono, Masao Nagase, Akira Fujiwara and Eiji Ohta, "Origin of ferromagnetism of MnSi1.7 nanoparticles in Si: First-principles calculations", Phys. Rev. B 78, 045307-1-7 (2008).
• Toru Akiyama, Tomonori Ito, Hiroyuki Kageshima, and Masashi Uematsu, "Stress dependence of oxidation reaction at SiO2/Si interfaces during silicon thermal oxidation", Jpn. J. Appl. Phys. 47, 7089-7093 (2008).
• Hiroki Hibino, Hiroyuki Kageshima, and Makio Uwaha, "Instability of steps during Ga deposition on Si(111)", Surf. Sci. 602, 2421-2426 (2008).
• Makoto Kasu, Kenji Ueda, Hiroyuki Kageshima, and Yoshiharu Yamauchi, "RF equivalent-circuit analysis of p-type diamond field-effect transistors with hydrogen surface termination", IEICE Trans. Electronics E91C, 1042-1049 (2008).
• Hiroki Hibino, Hiroyuki Kageshima, F.-Z. Guo, Fumihiko Maeda, Masato Kotsugi, and Yoshio Watanabe, "Two-dimensional emission patterns of secondary electrons from graphene layers formed on SiC(0001)", Appl. Surf. Sci. 254, 7596-7599 (2008).
• Hiroki Hibino, Hiroyuki Kageshima, Fuminiko Maeda, Masao Nagase, Yasuyuki Kobayashi, Yoshihiro Kobayashi, and Hiroshi Yamaguchi, "Thickness Determination of Graphene Layers Formed on SiC Using Low-Energy Electron Microscopy", e-J. Surf. Sci. Nanotech. 6, 107-110 (2008).
• Shin Yabuuchi, Yukinori Ono, Masao Nagase, Hiroyuki Kageshima, Akira Fujiwara, and Eiji Ohta, "Ferromagnetism of manganese-silicide nanoparticles in Si", Jpn. J. Appl. Phys. 47, 4487 (2008).
• Makoto Kasu, Kenji Ueda, Hiroyuki Kageshima, and Yoshiharu Yamauchi, "Gate Interfacial Layer in Hydrogen-Terminated Diamond Field-Effect Transistor", Diamond Related Materials 17, 741-744 (2008).
• Masao Nagase, Hiroki Hibino, Hiroyuki Kageshima, and Hiroshi Yamaguchi, "Local conductance measurement of few-layer graphene on SiC substrate using an integrated nanogap probe", J. Phys. Conf. Ser. 100, 052006 (2008).
• Toru Akiyama, Tomonori Ito, Hiroyuki Kageshima, and Masashi Uematsu, "Impact of oxidation-induced strain on microscopic processes related to oxidation reaction at the SiO2/Si(100) interface", Phys. Rev. B 77, 115356-1-5 (2008).
• Hiroki Hibino, Hiroyuki Kageshima, Fumihiko Maeda, Masao Nagase, Yoshihiro Kobayashi, and Hiroshi Yamaguchi, "Resonant electron transmission through discrete energy levels in thin graphite", Phys. Rev. B 77, 075413-1-7 (2008).
• Shin Yabuuchi, Hiroyuki Kageshima, and Eiji Ohta, "First-principles study on uniaxial strain effects on manganese in silicon", Jpn. J. Appl. Phys. 47, 26-30 (2008).
• Hiroyuki Kageshima, Masashi Uematsu, Toru Akiyama, and Tomonori Ito, "Microscopic Mechanism of Silicon Oxidation Process", Transanction of Electrochemical Society 6, 449 (2007).
• Jean-Francois Morizur, Yukinori Ono, Hiroyuki Kageshima, Hiroshi Inokawa, and Hiroshi Yamaguchi, "Impact of space-energy correlation on variable range hopping in a transistor", Phys. Rev. Lett. 98, 166601 (2007).
• S. Hosoi, K. Nakajima, M. Suzuki, K. Kimura, Y. Shimizu, S. Fukatsu, K. M. Itoh, M. Uematsu, H. Kageshima, and K. Shiraishi, "Observation of Si emission during thermal oxidation of Si(001) with high-resolution RBS", Nuclear Instruments and Methods in Physics Research B 249, 390-393 (2006).
• Hiroyuki Kageshima, Masashi Uematsu, Toru Akiyama, and Tomonori Ito, "Oxygen trap hypothesis in silicon oxide", Jpn. J. Appl. Phys. 45, 7672-7674 (2006).
• Hiroo Omi, Hiroyuki Kageshima, and Masashi Uematsu, "Scaling and universality of roughening in thermal oxidation of Si(001)", Phys. Rev. Lett. 97, 016102-1-4 (2006).
• Hiroyuki Kageshima, Akihito Taguchi, and Kazumi Wada, "Theoretical study of nitrogen-doping effects on void formation processes in silicon crystal growth", J. Appl. Phys. 100, 113513-1-7 (2006).
• Kazuyuki Uchida, Hiroyuki Kageshima, and Hiroshi Inokawa, "Quantum Effects in the Capacitance between a Pair of Thin and Slightly Separated SrTiO3 Slabs -- A First-principles Study --, Phys. Rev. B 74, 035408-1-6 (2006).
• Hiroyuki Kageshima, Masashi Uematsu, Kazuto Akagi, Shinji Tsuneyuki, Toru Akiyama, and Kenji Shiraishi, "Theoretical Study on Atomic Structures of Thermally Grown Silicon Oxide/Silicon Interfaces", e-J. Surf. Sci. Nanotech. 4, 584-587 (2006).
• Toru Akiyama, Keiji Kawamoto, Hiroyuki Kageshima, Masashi Uematsu, Koji Nakamura and Tomonori Ito, "A First-principles Study of O2 Diffusion in Compressively Strained High-Density Silicon Oxides", Thin Solid Films 508, 311-314 (2006).
• Masashi Uematsu, Hiroyuki Kageshima, Shigeto Fukatsu, Kohei Itoh, Kenji Shiraishi, Minoru Ohtani and Atsushi Oshiyama, "Enhanced Si and B Diffusion in Semiconductor-Grade SiO2 and the Effect of Strain on Diffusion", Thin Solid Films 508, 270-275 (2006).
• Shin Yabuuchi, Eiji Ohta, Hiroyuki Kageshima, and Akihito Taguchi, "First-principles study of strain effects on Mn in Si", Physica B 376-377, 672-676 (2006).
• Hiroyuki Kageshima, Masashi Uematsu, Kazuto Akagi, Shinji Tsuneyuki, Toru Akiyama, and Kenji Shiraishi, "Mechanism of oxide deformation during silicon thermal oxidation", Physica B 376-377, 407-410 (2006).
• Akihito Taguchi, Hiroyuki Kageshima, and Kazumi Wada, "Theoretical study for vacancy supersaturation during silicon crystal growth and nitrogen doping effects", Physica B 376-377, 130-132 (2006).
• Kazuyuki Uchida, Hiroyuki Kageshima, and Hiroshi Inokawa, "First-Principles Study of Field-Effect Doping in Nano-Scale Systems by the Enforced Fermi-Energy Difference Method", e-J. Surf. Sci. Nanotech. 3, 453-456 (2005).
• Kazuyuki Uchida, Hiroyuki Kageshima, and Hiroshi Inokawa, "Charge Injection Effects in A Single Phenyldithiol Molecule", Jpn. J. Appl. Phys. 44, 8759-8763 (2005).
• Hiroyuki Kageshima, Masashi Uematsu, Kazuto Akagi, Shinji Tsuneyuki, Toru Akiyama and Kenji Shiraishi, "Transport mechanism of interfacial network forming atoms during silicon oxidation", Jpn. J. Appl. Phys. 45, 694-699 (2006).
• Masashi Uematsu, Hiroyuki Kageshima and Kenji Shiraishi, "Effect of Nitrogen on Diffusion in Silicon Oxynitride", Jpn. J. Appl. Phys. 44, 7756-7759 (2005).
• Toru Akiyama, Hiroyuki Kageshima, Masashi Uematsu, and Tomonori Ito, "Theoretical investigation of oxygen diffusion in compressively strained high-density α-quartz", Jpn. J. Appl. Phys. 44, 7427-7429 (2005).
• Masayuki Tsuda, Hajime Arai, Masaya Takahashi, Hideaki Ohtsuka, Yoji Sakurai, Koji Sumitomo and Hiroyuki Kageshima, "Electrode performance of layered LiNi0.5Ti0.5O2 prepared by ion exchange", J. Power Sources 144, 183-190 (2005).
• Akihito Taguchi, Hiroyuki Kageshima and Kazumi Wada, "First-principles investigations of nitrogen-doping effects on defect aggregation processes in Czochralski Si", J. Appl. Phys. 97, 053514-1-5 (2005).
• Toru Akiyama and Hiroyuki Kageshima, "Reaction mechanisms of oxygen at SiO2/Si(100) interfaces", Surf. Sci. Lett. 576, L65-L70 (2005).
• Masashi Uematsu, Hiroyuki Kageshima, Yasuo Takahashi, Shigeto Fukatsu, Kohei M. Ito, and Kenji Shiraishi, "Simulation of correlated diffusion of Si and B in thermally grown SiO2", J. Appl. Phys. 96, 5513-5519 (2004).
• Hiroyuki Kageshima, Masashi Uematsu, Kazuto Akagi, Shinji Tsuneyuki, Toru Akiyama and Kenji Shiraishi, "Theoretical study of excess Si emitted from Si-oxide/Si interfaces", Jpn. J. Appl. Phys. 43, 8223-8226 (2004).
• Toru Akiyama, Hiroyuki Kageshima, and Tomonori Ito, "First-principles Analyses of O2 Molecules around Ultrathin SiO2/Si(100) Interface", Jpn. J. Appl. Phys. 43, 7903 (2004).
• Shigeto Fukatsu, Kohei M. Ito, Masashi Uematsu, Hiroyuki Kageshima, Yasuo Takahashi, and Kenji Shiraishi, "The effect of the Si/SiO2 interface on silicon and boron diffusion in thermally grown SiO2", Jpn. J. Appl. Phys. 43, 7837 (2004).
• Tomonori Ito, Kazumi Tsutsumida, Kohji Nakamura, Yoshihiro Kangawa, Kenji Shiraishi, Akihito Taguchi and Hiroyuki Kageshima, "Systematic theoretical investigations of adsorption behavior on the GaAs(001)-c(4x4) surfaces", Appl. Surf. Sci. 237, 194 (2004).
• Masashi Uematsu, Hiroyuki Kageshima, Yasuo Takahashi, Shigeto Fukatsu, Kohei M. Itoh, Kenji Shiraishi, and Ulrich Goesele, "Correlated diffusion of silicon and boron in thermally grown SiO2", Appl. Phys. Lett. 85, 221 (2004).
• Masashi Uematsu, Hiroyuki Kageshima, Yasuo Takahashi, Shigeto Fukatsu, Kohei M. Itoh, Kenji Shiraishi, and Ulrich Goesele, "Modeling of Si self-diffusion in SiO2 taking into account the effect of the Si/SiO2 interface and evidence of time-dependent diffusion", Appl. Phys. Lett. 84, 876 (2004).
• Shigeto Fukatsu, Tomonori Takahashi, Kohei M. Itoh, Masashi Uematsu, Akira Fujiwara, Hiroyuki Kageshima, Yasuo Takahashi, and Kenji Shiraishi "The effect of partial pressure of oxygen on self-diffusion of Si in SiO2", Jpn. J. Appl. Phys. 42, L1492 (2003).
• Hiroyuki Kageshima, Akihito Taguchi, and Kazumi Wada, "Formation of stable N-V-O complex in Si", Physica B 340-342, 626 (2003).
• Shigeto Fukatsu, Tomonori Takahashi, Kohei M. Itoh, Masashi Uematsu, Akira Fujiwara, Hiroyuki Kageshima, Yasuo Takahashi, Kenji Shiraishi, and Ulrich Goesele, "Effect of the SiO2/Si interface on self-diffusion of Si in semiconductor-grade SiO2", Appl. Phys. Lett. 83, 3897 (2003).
• Masashi Uematsu, Hiroyuki Kageshima, Kenji Shiraishi, Masao Nagase, Seiji Horiguchi, and Yasuo Takahashi, "Two-Dimensional Simulation of Pattern-Dependent Oxidation of Si Nano-structures on Silicon-on-Insulator Substrates", Sol. State Engineer. 48, 1073 (2004).
• Tomonori Takahashi, Shigeto Fukatsu, Kohei M. Itoh, Masashi Uematsu, Akira Fujiwara, Hiroyuki Kageshima, Yasuo Takahashi, and Kenji Shiraishi, "Self-diffusion of Si in thermally grown SiO2 under equilibrium conditions", J. Appl. Phys. 93, 3674 (2003).
• Toru Akiyama and Hiroyuki Kageshima, "Microscopic mechanism of interfacial reaction during Si oxidation", Appl. Surf. Sci. 216, 270 (2003).
• Tomonori Ito, Kohji Nakamura, Yoshihiro Kangawa, Kenji Shiraishi, Akihito Taguchi, and Hiroyuki Kageshima, "Systematic theoretical investigations of miscibility in Si1-x-yGexCy thin films", Appl. Surf. Sci. 216, 458-462 (2003).
• David J. Bottomley, Hiroo Omi, Yoshihiro Kobayashi, Masashi Uematsu, Hiroyuki Kageshima, and Toshio Ogino, "Origin of self-assembled step and terrace formation at the Si(001)-SiO2 interface", Phys. Rev. B66, 035301-1-5 (2002).
• Masashi Uematsu, Hiroyuki Kageshima and Kenji Shiraishi, "Interfacial Silicon Emission in Dry Oxidation-the Effect of H and Cl", Jpn. J. Appl. Phys. 41, 2455-2458 (2002).
• Hiroyuki Kageshima, Masashi Uematsu, and Kenji Shiraishi, "Theory of Si thermal oxide growth rate taking account of interfacial Si emission effect", Microelectronics Engineering 59, 301-309 (2001).
• Masashi Uematsu, Hiroyuki Kageshima, and, Kenji Shiraishi, "Microscopic Mechanism of Thermal Silicon Oxide Growth", Computational Materials Science 24, 229-234 (2002).
• Masashi Uematsu, Hiroyuki Kageshima and Kenji Shiraishi, "Oxidation Simulation of Heavily Phosphorus-Doped Silicon based on the Interfacial Silicon Emission Model", Jpn. J. Appl. Phys. 40, 5197-5200 (2001).
• Masashi Uematsu, Hiroyuki Kageshima and Kenji Shiraishi, "The Effect of Chlorine on Silicon Oxidation: Simulation based on the Interfacial Silicon Emission Model", Jpn. J. Appl. Phys. 40, 2217-2218 (2001).
• Yuji Suwa, Jun Yamauchi, Hiroyuki Kageshima and Shinji Tsuneyuki, "First principles study of isotope effect in hydrogen-bonded K3H(SO4)2: II - Zero-point oscillation effect", Materials Scinence & Engineering B79, 98-112 (2001).
• Yuji Suwa, Jun Yamauchi, Hiroyuki Kageshima and Shinji Tsuneyuki, "First principles study of isotope effect in hydrogen-bonded K3H(SO4)2: I - stable structures", Materials Scinence & Engineering B79, 31-44 (2001).
• Seiji Horiguchi, Masao Nagase, Kenji Shiraishi, Hiroyuki Kageshima, Yasuo Takahashi, and Katsumi Murase, "Mechanism of potential profile formation in silicon single-electron transistors fabricated using pattern-dependent oxidation", Jpn. J. Appl. Phys. 40, L29-L32 (2001).
• Masashi Uematsu, Hiroyuki Kageshima, and Kenji Shiraishi, "Simulation of wet oxidation of silicon based on the interfacial silicon emission model and comparison with dry oxidation", J. Appl. Phys. 89, 1948-1953 (2000).
• Kenji Shiraishi, Hiroyuki Kageshima, and Masashi Uematsu, "Phenomenological Theory on Si Layer-by-Layer Oxidation with Small Interfacial Islands", Jpn. J. Appl. Phys. 39, L1263-L1266 (2000).
• Masashi Uematsu, Hiroyuki Kageshima, and Kenji Shiraishi, "Oxidation simulation of (111) and (100) silicon substrates based on the interfacial silicon emission model", Jpn. J. Appl. Phys. 39, L1135-L1137 (2000).
• Masashi Uematsu, Hiroyuki Kageshima, and Kenji Shiraishi, "Simulation of high-pressure oxidation of silicon based on the interfacial silicon emission model", Jpn. J. Appl. Phys. 39, L952-L954 (2000).
• Hiroyuki Kageshima, Kenji Shiraishi, Hiroya Ikeda, Shigeaki Zaima, and Yukio Yasuda, "Selectivity rule for O adsorption position on dihydride Si(100) surfaces", Appl. Surf. Sci. 159-160, 14-18 (2000).
• Masashi Uematsu, Hiroyuki Kageshima, and Kenji Shiraishi, "Unified Simulation of Silicon Oxidation Based on the Interfacial Silicon Emission Model", Jpn. J. Appl. Phys. 39, L699-L702 (2000).
• Hiroyuki Kageshima, Akihito Taguchi, and Kazumi Wada, "Theoretical investigation of nitrogen-doping effect in vacancy aggregation processes in Si", Appl. Phys. Letts. 76, 3718 (2000).
• Hiroyuki Kageshima, Kenji Shiraishi, and Masashi Uematsu, "Universal theory of Si oxidation rate and importance of interfacial Si emission", Jpn. J. Appl. Phys. 38, L971 (1999).
• Hiroyuki Kageshima and Kenji Shiraishi, "Relation between oxide growth direction and stress on silicon surfaces and at silicon-oxide/silicon interfaces", Surf. Sci. 438, 102 (1999).
• Kenji Shiraishi, Tomonori Ito, Yasuo Y. Suzuki, Hiroyuki Kageshima, Kiyoshi Kanisawa, and Hiroshi Yamaguchi, "Microscopic Investigation of the Surface Phase Transition on GaAs(001) Surfaces", Surf. Sci. 433-435, 382 (1999).
• Eiichi Yamaguchi, Kenji Shiraishi and Hiroyuki Kageshima, "Level-Resonance Transition of Deep States Produced by Nitrogen Vacancies in Nitride Semiconductors", Phys. Stat. Sol. (b) 211, 157 (1999).
• Akihito Taguchi and Hiroyuki Kageshima, "Diffusion and stability of oxygen in GaAs and AlAs", Phys. Rev. B 60, 5383 (1999).
• Hiroyuki Kageshima and Kenji Shiraishi, "First-principles study of oxide growth on Si surfaces and at SiO2/Si interfaces", Phys. Rev. Lett. 81, 5936 (1998).
• Akihito Taguchi, and Hiroyuki Kageshima, "First principle investigations of the oxygen negative-U center in GaAs", Phys. Rev. B 57, R6779 (1998).
• Hiroyuki Kageshima and Kenji Shiraishi, "First principles study of photoluminescence from silicon/silicon-oxide interfaces", in Materials and Devices for Silicon-Based Optoelectronics, edited by A. Polman, S. Coffa, and R. Soref (Symposium Proceedings, vol.486, Materials Research Society, Pennsylvania, 1998) p.337.
• Hiroyuki Kageshima and Kenji Shiraishi, "First principles study of interfacial reaction atomic process at silicon oxidation", in Microscopic Simulation of Interfacial Phenomena in Solids and Liquids, edited by S. R. Phillpot, P. D. Bristowe, D. G. Stroud, and J. R. Smith (Symposium Proceedings, vol.492, Materials Research Society, Pennsylvania, 1998) p.195.
• Hiroyuki Kageshima and Kenji Shiraishi, "Si-kicking-out mechanism of initial oxide formation on hydrogen-terminated Si(100) surfaces", Appl. Surf. Sci. 130-132, 176 (1998).
• Kenji Shiraishi, Yasuo Y. Suzuki, Hiroyuki Kageshima, and Tomonori Ito, "Theoretical investigation of inter-surface diffusion on non-planar GaAs surfaces", Appl. Surf. Sci. 130-132, 431 (1998).
• Hiroyuki Kageshima and Kenji Shiraishi, "Theoretical study of valence band offset dependence on interfacial defects in silicon/silicon-oxide interfaces", Surf. Sci. 407, 133 (1998).
• Hiroyuki Kageshima and Kenji Shiraishi, "Momentum matrix element calculation using pseudopotentials", Phys. Rev. B 56, 14985 (1997).
• Hiroyuki Kageshima and Kenji Shiraishi, "Microscopic mechanism for SiO2/Si interface passivation: Si=O double bond formation", Surf. Sci. 380, 61 (1997).
• Hiroyuki Kageshima and Kenji Shiraishi, "A method for calculating momentum matrix elements with pseudopotentials", Jpn. J. Appl. Phys. 35, L1605 (1996).
• Hiroyuki Kageshima, Kenji Shiraishi, and Kyozaburo Takeda, "Electronic structures of penta-heptagonal boron-carbon networks" in '23rd International Conference on the Physics of Semiconductors', editted by Matthias Scheffler and Roland Zimmermann, World Scientific (Singapore ,1996), p. 3371.
• Hiroyuki Kageshima and Michiharu Tabe, "Theoretical calculation of core level shifts for O/Si(111) surfaces", Surf. Sci. 351, 53 (1996).
• Hiroyuki Kageshima, Yukinori Ono, Michiharu Tabe, and Takahisa Ohno, "Origin of dark regions in scanning tunneling microscopy images formed by thermal oxidation of Si(111) surface", Jpn. J. Appl. Phys. 33, 4070 (1994).
• Yukinori Ono, Michiharu Tabe, and Hiroyuki Kageshima, "Scanning-tunneling-microscopy observation of thermal oxide growth on Si(111) 7x7 surfaces", Phys. Rev. B48, 14291 (1993).
• Masaru Tsukada, Katsuyoshi Kobayashi, Nobuyuki Isshiki, Satoshi Watanabe, Hiroyuki Kageshima and Tatsuo Schimizu, "Quantum theory of scanning tunneling microscopy and spectroscopy and its application to surface electronic processes", J. Molecular Catalysis 82, 253-263 (1993).
• Masaru Tsukada, Katsuyoshi Kobayashi, Nobuyuki Isshiki, Hiroyuki Kageshima, Toshihiro Uchiyama, Satoshi Watanabe, and Tatsuo Schimizu, "Novel features of surface electronic structure revealed by the theoretical simulation of scanning tunneling microscopy/spectroscopy", Surf. Sci. 287-288, 1004-1012 (1993).
• Hiroyuki Kageshima and Masaru Tsukada, "Theory of scanning tunneling microscopy and spectroscopy on Si(100) reconstructed surfaces", Phys. Rev. B 46, 6928-6937 (1992).
• Nobuyuki Isshiki, Hiroyuki Kageshima, K. Kobayashi, and Masaru Tsukada, "First-principles simulation of STM/STS of Si(100) reconstructed surfaces", Ultramicroscopy 42-44, 109-114 (1992).
• Masaru Tsukada, Hiroyuki Kageshima, Nobuyuki Isshiki, and Katsuyoshi Kobayashi, "Connected vacuum tail method and its application to scanning tunneling microscopy", Surf. Sci. 266, 253-258 (1992).
• Masaru Tsukada, K. Kobayashi, Nobuyuki Isshiki, and Hiroyuki Kageshima, "First-principles theory of scanning tunneling microscopy", Surf. Sci. Rep. 13, 265-304 (1991).
• Hiroyuki Kageshima and Masaru Tsukada, "Theory of the FIM image of phthalocyanine", Surf. Sci. 236, 385-397 (1990).
• Masaru Tsukada, Nobuyuki Shima, Shinji Tsuneyuki, Hiroyuki Kageshima, and Tamotsu Kondow, "Mechanism of electron attachment to van der Waals clusters: Application to carbon dioxide clusters", J. Chem. Phys. 87, 3927-3933 (1987).

国際会議発表

• 4-8 Jun. 2012, Sixth International Conference on the Fundamental Science of Graphene and Applications of Graphene-Based Devices (Graphene Week 2012), Delft, Netherland: Shinichi Tanabe, Makoto Takamura, Yoshiaki Sekine, Hiroyuki Kageshima, and Hiroki Hibino, "Hydrogen-intercalation effects on electronic transport of mono- and bi-layer epitaxial graphene on SiC(0001)".
• 14 Dec. 2011, International Symposium on Surface Science -Towards Nano-, Bio-, and Green Inovation- (ISSS-6), Mizue, Tokyo, Japan: Hiroyuki Kageshima, Hiroki Hibino, Hiroshi Yamaguchi, and Masao Nagase, 14amB-1-2, "Role of steps and edges in epitaxial graphene growth on SiC(0001)".
• 25 Oct. 2011, The Third International Symposium on the Science and Technology of Epitaxial Graphene (STEG III), Saint Augustine, Georgia, USA: Hiroki Hibino, Shinichi Tanabe, and Hiroyuki Kageshima, "Carrier transport in epitaxial graphene grown on SiC(0001)". (invited)
• 30 Sep. 2011, 2011 International Conference on Solid State Devices and Materials (SSDM2011), Nagoya, Japan: Shinichi Tanabe, Yoshiaki Sekine, Hiroyuki Kageshima, and Hiroki Hibino, K-9-1, "Electrical characterization of bilayer graphene formed by hydrogen intercalation of monolayer graphene on SiC(0001)".
• 30 Sep. 2011, 2011 International Conference on Solid State Devices and Materials (SSDM2011), Nagoya, Japan: Hiroyuki Kageshima, Hiroki Hibino, Hiroshi Yamaguchi, and Masao Nagase, KM-6-3, "Theory on Initial Stage of Epitaxial Graphene Growth on SiC(0001)".
• 5 Sep. 2011, 22nd European Conference on Diamond, Diamond-Like-Materials, Carbon-Nanotubes, and Nitrides (Diamond2011), Garmisch-Partenkirchen, Germany: Masahito Inoue, Yoshihiro Kangawa, Hiroyuki Kageshima, Katsunori Wakabayashi, and Koichi Kakimoto, P1.40, "Anisotropic growth mechanism of graphene on a vicinal SiC(0001) surface".
• 17 Aug. 2011, XX International Materials Research Congress 2011 (IMRC), Cancun, Mexico: Hiroki Hibino, Shinichi Tanabe, and Hiroyuki Kageshima, S1-47, "Growth and electronic transport properties of monolayer and bilayer graphene on SiC". (invited)
• 3 Aug. 2011, The 6th International School and Conference on Spintronics and Quantum Infromation Technology (SPINTECH6), Matsue, Japan: Yoshiaki Sekine, Hiroki Hibino, Katsuya Oguri, Tatsushi Akasaki, Hiroyuki Kageshima, Masao Nagase, and Hiroshi Yamaguchi, WP-86, "Surface-enhanced Raman scattering of graphene on SiC".
• 24 May 2011, 8th International Symposium on Atomic Level Characterizations for New Materials and Devices '11 in conjuction with IUMAS-V (ALC '11), Seoul, South Korea: Hiroki Hibino, Shinichi Tanabe, and Hiroyuki Kageshima, 24SS07, "Growth, structure, and transport properties of epitaxial graphene grown on SiC". (invited)
• 20 Jan. 2011, 2011 International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Technology (IWDTF2011), Tokyo, Japan: Hiroyuki Kageshima, Hiroki Hibino, Hiroshi Yamaguchi, and Masao Nagase, P-24, "Theoretical study on epitaxial graphene growth on SiC(0001) surface".
• 17 Jan. 2011, Graphene Workshop in Tsukuba, Tsukuba, Japan, Hiroki Hibino, Shinichi Tanabe, and Hiroyuki Kageshima, "Growth and characterization of graphene on SiC ".
• 12 Jan. 2011, The International Symposium on Nanoscale Transport and Technology (ISNTT2011), Atsugi, Japan: Hiroyuki Kageshima, Hiroki Hibino, Masao Nagase, Yoshiaki Sekine, and Hiroshi Yamaguchi, PWe-10, "Theoretical study on magnetoelectric effects of embedded graphene nanoribbons on SiC(0001) surface".
• 12 Jan. 2011, The International Symposium on Nanoscale Transport and Technology (ISNTT2011), Atsugi, Japan: Yoshiaki Sekine, Hiroki Hibino, Katsuya Oguri, Tatsushi Akasaki, Hiroyuki Kageshima, Masao Nagase, and Hiroshi Yamaguchi, PWe-12, "Surface-enhanced Raman spectroscopy of graphene grown on SiC".
• 11 Jan. 2011, The International Symposium on Nanoscale Transport and Technology (ISNTT2011), Atsugi, Japan: Jin-ichiro Noborisaka, Katsuhiko Nishiguchi, Yukinori Ono, Hiroyuki Kageshima, and Akira Fujiwara, PTu-14, "Electroluminescence study of phosphorous ionization in silicon-on-insulator metal-oxide-semiconductor field-effect transistors".
• 2 Dec. 2010, The 2010 Fall Meeting of the Materials Research Society (MRS), Boston, USA: Shinichi Tanabe, Yoshiaki Sekine, Hiroyuki Kageshima, Masao Nagase, and Hiroki Hibino, B9.2, "Electronic transport properties of top-gated monolayer and bilayer graphene devices on SiC".
• 16 Nov. 2010, Japan-Korea Symposium on Surface and Nanostructure 9th (JKSSN9), Sendai, Japan: Hiroyuki Kageshima, Hiroki Hibino, Masao Nagase, Yoshiaki Sekine, and Hiroshi Yamaguchi, Session (2)-4, "Theoretical study on growth, structure, and physical properties of graphene on SiC".
• 4 Nov. 2010, International Conference on Solid-State _and Integrated Circuit Technology (ICSICT-2010), Shanghai, China: Hiroyuki Kageshima, "Mechanism of nanochannel formation processes: thermal oxidation of Si nanostructures and graphene formation on SiC". (invited)
• 29 Oct. 2010, International Symposium on Graphene Devices 2010 (ISGD2010), Sendai, Japan: Hiroyuki Kageshima, Hiroki Hibino, Masao Nagase, Yoshiaki Sekine, and Hiroshi Yamaguchi, "Theoretical study on functions of graphene". (invited)
• 28 Oct. 2010, International Symposium on Graphene Devices 2010 (ISGD2010), Sendai, Japan: Masao Nagase, Hiroki Hibino, Hiroyuki Kageshima and Hiroshi Yamaguchi, "Electrical contact properties of few-layer graphene on SiC substrate". (invited)
• 27 Oct. 2010, International Symposium on Graphene Devices 2010 (ISGD2010), Sendai, Japan: Hiroki Hibino, Shinichi Tanabe, Hiroyuki Kageshima, and Masao Nagase, "Growth, structure, and transport properties of epitaxial graphene on SiC". (invited)
• 23 Sep. 2010, 2010 International Conference on Solid State Devices and Materials (SSDM), Sendai, Japan: Shinichi Tanabe, Yoshiaki Sekine, Hiroyuki Kageshima, Masao Nagase and Hiroki Hibino, J-4-3, "Observation of bandgap in epitaxial bilayer graphene field effect transistors".
• 23 Sep. 2010, 2010 International Conference on Solid State Devices and Materials (SSDM), Tokyo, Japan: Jin-ichiro Noborisaka, Katsuhiko Nishiguchi, Yukinori Ono, Hiroyuki Kageshima, and Akira Fujiwara, F-5-4, "Strong stark effect of electroluminescence in thin SOI MOSFETs".
• 14 Sep. 2010, Second International Symposium on the Science and Technology of Epitaxial Graphene (STEG2), Hiroki Hibino, Hiroyuki Kageshima, Shinichi Tanabe, Masao Nagase, Seigi Mizuno, and Satoru Tanaka, "Surface Electron Microscopy of Epitaxial Graphene", Amelia Island, Florida, USA. (invited)
• 24 Aug. 2010, 18th International Vacuum Congress (IVC-18)/International Conference on Nanoscience and Technology (ICN+T 2010)/14th International Conference on Surfaces Science (ICSS-14)/Vacuum and Surface Sciences Conference of Asia and Australia (VASSCAA-5), Beijing, China: Masao Nagase, Hiroki Hibino, Hiroyuki Kageshima, and Hiroshi Yamaguchi, P1-EmP1-18, "Contact conductance measurement of nano-membrane structure of graphene on SiC".
• 26 Jul. 2010, 30th International Conference on the Physics of Semiconductors (ICPS2010), Seoul, Korea: Hiroyuki Kageshima and Akira Fujiwara, P1-030, "Effective dielectric constant of Si-nanofilm channel in the full inversion regime under field effect due to symmetric double gate".
• 26 Jul. 2010, 30th International Conference on the Physics of Semiconductors (ICPS2010), Seoul, Korea: Hiroyuki Kageshima, Hiroki Hibino, Masao Nagase, Yoshiaki Sekine, and Hiroshi Yamaguchi, TuD1-2, "Atomic structure of epitaxial graphene islands on SiC(0001) surfaces and their magnetoelectric effects".
• 25 Jul. 2010, Asia-Pacific Conference on Semiconducting Silicides and Related Materials Science and Technology Towards Sustainable Optoelectronics (APAC-SILICIDE 2010), Tsukuba, Japan: Y. Ono, Y. Miyazaki, S. Yabuuchi, H. Kageshima, M. Nagase, A. Fujiwara, and E. Ota, 25-AM-IV-4, "Significance of the Interface regarding Magnetic Properties of Mn-Nanosilicide in Silicon".
• 31 May 2010, International Workshop on "In situ characterization of near surface processes", Eisenerz, Austria: Hiroki Hibino, Hiroyuki Kageshima, and Masao Nagase, "In-situ surface electron microscopy observations of growth and etching of epitaxial few-layer graphene on SiC" (invited).
• 9 Dec. 2009, International Symposium on Atomic Level Characterizations for New Materials and Devices 2009 (ALC09), Kaanapali, Maui, Hawaii, USA: Hiroki Hibino, Hiroyuki Kageshima, and Masao Nagase, 09AM03, "Microscopic Evaluations of Structure and Electronic Properties of Epitaxial Graphene" (invited).
• 3 Dec. 2009, 2009 International Symposium on Advanced Nanodevices and Nanotechnology (ISANN 2009), Kaanapali, Maui, Hawaii, USA: Masao Nagase, Hiroki Hibino, Hiroyuki Kageshima, and Hiroshi Yamaguchi, "Microscopic characterization of few-layer graphene on SiC" (invited).
• 17 Nov. 2009, 22nd International Microprocesses and Nanotechnology Conference (MNC 2009), Sapporo, Japan, Hiroki Hibino, Hiroyuki Kageshima, and Masao Nagase, "Structure and Electronic Properties of Epitaxial Graphene Grown on SiC Studied by Surface Electron Microscopy", 17B-2-2 (invited).
• 12 Oct. 2009, 2009 International Conference on Silicon Carbide and Related Materials (ICSCRM), Nuernberg, Germany, Hiroyuki Kageshima, Hiroki Hibino, and Masao Nagase, "Study of epitaxial graphene growth using LEEM and first-principles", Mo-P-1 (invited).
• 7 Oct. 2009, 2009 International Conference on Solid State Devices and Materials (SSDM), Sendai, Japan, Jin-ichiro Noborisaka, Katsuhiko Nishiguchi, Hiroyuki Kageshima, Yukinori Ono, and Akira Fujiwara, "Tunnel spectroscopy of electron subbands in thin SOI MOSFETs", K-1-3.
• 10 Sep. 2009, The 20th European Conference on Diamond, Diamond-like Materials, Carbon Nanotubes, and Nitrides (Diamond 2009), Athens, Greece, Michal Kubovic, Makoto Kasu, Toshiharu Yamauchi, and Hiroyuki Kageshima, "Increase of Hole Concentration of Hydrogen-terminated Diamond Surface After Adsorption of Specific Gas Species", O72.
• 24 Jun. 2009, 2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD), Busan, Korea, Masao Nagase, Hiroki Hibino, Hiroyuki Kageshima, and Hiroshi Yamaguchi, "Metrology of microscopic properties of graphene on SiC", 1B.1 (invited).
• 13 Jun. 2009, The 2009 IEEE Silicon Nanoelectronics Workshop (SNW-09), Kyoto, Japan, Hiroyuki Kageshima and Akira Fujiwara, "First-principles Study on Channel Thickness Dependence of Inversion Layer Dielectric Constant in Double-Gate Atomically Thin Silicon", 7-1.
• 2 Mar. 2009, 2009 RCIQE International Seminar on "Advanced Semiconductor Materials and Devices", Sapporo, Japan, Masao Nagase, Hiroki Hibino, Hiroyuki Kageshima, and Hiroshi Yamaguchi, "Novel microscopies for graphene on SiC" (invited).
• 23 Jan. 2009, International Symposium on Nanoscale Transport and Technology (ISNTT), Atsugi, Japan, Masao Nagase, Hiroki Hibino, Hiroyuki Kageshima, and Hiroshi Yamaguchi, "Local conductance of deformed graphene near atomic steps on SiC".
• 10 Dec. 2008, The 13th Advanced Heterostructures and Nanostructures Workshop (AHNW) -- Workshop on Innovative Nanoscale Devices and Systems -- Hawaii, USA, Masao Nagase, Hiroki Hibino, Hiroyuki Kageshima, Hiroshi Yamaguchi, "Local conductance measurement of deformed double-layer graphene on atomic step-structures of SiC substrate" (invited).
• 17 Nov. 2008, The International Symposium on Graphene Devices: Technology, Physics and Modeling (ISGD), Aizu-Wakamatsu, Fukushima, Japan, Hiroki Hibino, Masao Nagase, C. Jackson, Hiroyuki Kageshima, Yoshihiro Kobayashi, and Hiroshi Yamaguchi, "Evaluation of number of graphene layers grown on SiC: SPM and Raman spectroscopy studies", M3-3.
• 17 Nov. 2008, The International Symposium on Graphene Devices: Technology, Physics and Modeling (ISGD), Aizu-Wakamatsu, Fukushima, Japan, Hiroyuki Kageshima, Hiroki Hibino, Masao Nagase, and Hiroshi Yamaguchi, "Theoretical study on epitaxial graphene formation on SiC(0001) surfaces", M3-4.
• 18 Nov. 2008, The International Symposium on Graphene Devices: Technology, Physics and Modeling (ISGD), Aizu-Wakamatsu, Fukushima, Japan, Masao Nagase, Hiroki Hibino, Hiroyuki Kageshima, and Hiroshi Yamaguchi, "Local conductance measurement of thermally grown graphene on SiC substrate", T1-2.
• 10 Nov. 2008, The 5th International Symposium on Surface Science and Nanotechnology (ISSS-5), Tokyo, Japan, Hiroo Omi, Hiroyuki Kageshima, Masashi Uematsu, Tomoaki Kawamura, Yoshihiro Kobayashi, Seiji Fujikawa, Yoshiyuki Tsusaka, Yasushi Kagoshima and Junji Matsui, "Temperature dependent roughening at the growing SiO2/Si(001) interface", 10p-p-101.
• 10 Nov. 2008, The 5th International Symposium on Surface Science and Nanotechnology (ISSS-5), Tokyo, Japan, Hiroki Hibino, Hiroyuki Kageshima, Masato Kotsugi and Yoshio Watanabe, "Local work function measurements of epitaxial few-layer graphene", 10p-h-6 (invited).
• 10 Nov. 2008, The 5th International Symposium on Surface Science and Nanotechnology (ISSS-5), Tokyo, Japan, Hiroyuki Kageshima, Hiroki Hibino, Masao Nagase and Hiroshi Yamaguchi, "First-principles Study on Epitaxial Graphene Formation on SiC(0001) Surfaces", 10p-h-8 (invited).
• 7 Nov. 2008, The 2008 International Workshop on Dielectric Thin Films for Future ULSI Devices (IWDTF-08), Tokyo, Japan, Toru Akiyama, Hiroyuki Kageshima, Masashi Uematsu and Tomonori Ito, "Reaction Mechanisms of H2O Molecules at SiO2/Si Interfaces during Silicon Thermal Oxidation", S7-4.
• 5 Nov. 2008, The 2008 International Workshop on Dielectric Thin Films for Future ULSI Devices (IWDTF-08), Tokyo, Japan, Hiroyuki Kageshima, Toru Akiyama, Masashi Uematsu and Tomonori Ito, "Theoretical Study on Nitrogen and Nitrogen Oxide Molecules in Silicon Oxide", P1-21.
• 22 Oct. 2008, IEEE Nanotechnology Materials and Devices 2008 (NMDC 2008), Kyoto, Japan, Hiroyuki Kageshima and Akira Fujiwara, "First-principles Study on Inversion Layer Capacitance of Atomically Thin Si Channel Double Gate Field Effect Transistor", WeA II-5.
• 21 Oct. 2008, IEEE Nanotechnology Materials and Devices 2008 (NMDC 2008), Kyoto, Japan, Masao Nagase, Hiroki Hibino, Hiroyuki Kageshima and Hiroshi Yamaguchi, "In plane conductance images of few-layer graphene on SiC substrate", TuB II-4.
• 8 Sep. 2008, The 19th European Conference on Diamond, Diamond-like Materials, Carbon Nanotubes, and Nitrides, Sitges, Spain, Makoto Kasu, M. Kubovic, Yoshiharu Yamauchi, Kenji Ueda, and Hiroyuki Kageshima, "Structural and Electrical Properties of H-terminated Diamond Field-effect Transistor".
• 8 Sep. 2008, The 19th European Conference on Diamond, Diamond-like Materials, Carbon Nanotubes, and Nitrides, Sitges, Spain, Hiroyuki Kageshima and Makoto Kasu, "First-principles Study on Schottky Barrier Height of H-terminated Diamond (100)".
• 22 Jul. 2008, The 2008 International Conference on Nanoscience + Technology (ICN+T 2008), Keystone, Colorado, USA, Masao Nagase, Hiroki Hibino, Hiroyuki Kageshima and Hiroshi Yamaguchi, "Local conductance of graphene layer near the buried atomic steps on SiC substrate", NM1-TuM6.
• 15 Jun. 2008, The 2007 IEEE Silicon Nanoelectronics Workshop (SNW-07), Honolulu, Hawaii, Hiroyuki Kageshima and Akira Fujiwara, "First-principles Study on Inversion Layer Properties of Double-Gate Atomically Thin Silicon Channel".
• 6 Dec. 2007, 15th International Colloquium on Scanning Probe Microscopy (ICSPM15), Higashi-Izu, Shizuoka, Japan, Masao Nagase, Hiroki Hibino, Hiroyuki Kageshima and Hiroshi Yamaguchi, "Conductance of Nano-graphene Island Measured Using Nanogap Electrodes Integrated on Scanning Probe", S4-54.
• 6 Dec. 2007, 15th International Colloquium on Scanning Probe Microscopy (ICSPM15), Higashi-Izu, Shizuoka, Japan, Hiroki Hibino, Masao Nagase, Hiroyuki Kageshima, Fumihiko Maeda, Yasuyuki Kobayashi and Hiroshi Yamaguchi, "Number-of-Layers Distribution in Graphene Layers Formed on SiC(0001)", S4-52.
• 14 Nov. 2007, 9th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-9), Tokyo, Japan, Hiroki Hibino, Hiroyuki Kageshima, F.-Z. Guo, Fumihiko Maeda, Masato Kotsugi, and Yoshio Watanabe, "Two-dimensional emission patterns of secondary electrons from graphene layers formed on SiC(0001)", 14Ca-5.
• 13 Nov. 2007, 9th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-9), Tokyo, Japan, Hiroyuki Kageshima, and Makoto Kasu, "Theoretical study on hydrogen terminated dependence of Schottky barrier height for Al/diaomnd (100) interfaces", 13Aa-6.
• 30 Oct. 2007, 6th International Symposium on Atomic Level Characterizations for New Materials and Devices '07 (ALC'07), Kanazawa, Japan, Hiroki Hibino, Hiroyuki Kageshima, Fumihiko Maeda, Masao Nagase, Yoshihiro Kobayashi, and Hiroshi Yamaguchi, "Thickness determination of graphene layers formed on SiC using low-energy electron microscopy", TuA-7.
• 30 Oct. 2007, The 10th Asian Workshop on First-Principles Electronic Structure Calculations (ASIAN10), Higashi-Hiroshima, Japan, Hiroyuki Kageshima and Akira Fujiwara, "Property of Silicon Quantum Capacitors", P-22.
• 16 Oct. 2007, The 34th International Symposium on Compound Semiconductors (ISCS2007), Kyoto, Japan, Hiroyuki Kageshima and Makoto Kasu, "First-principles Study on Vacancy-Hydrogen Complexes in Diamond", TuE P17.
• 16 Oct. 2007, The 34th International Symposium on Compound Semiconductors (ISCS2007), Kyoto, Japan, Makoto Kasu, Kenji Ueda, Hiroyuki Kageshima and Yoshitaka Taniyasu, "Diamond RF FETs and Other Applications in Electronics", TuC III-1 (Invited).
• 24 Aug. 2007, 7th Topical Workshop on Heterostructure Microelectronics (TWHM2007), Kisarazu, Japan, Makoto Kasu, Kenji Ueda, Hiroyuki Kageshima, Yoshiharu Yamauchi, and Toshiki Makimoto, "RF Equivalent-Circuit Analysis of Submicron-Gate Diamond FETs", FrB-8.
• 4 Jul. 2007, 17th International Vacuum Congress (IVC17)/13th International conference on Surface Science (ICSS13)/International Conference on Nano-Science and Technology (ICN+T2007), Stockholm, Sweden, Hiroyuki Kageshima and Akira Fujiwara, "First-principles study on capacitor made of silicon (111) nano-slabs", SS02-266.
• 3 Jul. 2007, 17th International Vacuum Congress (IVC17)/13th International conference on Surface Science (ICSS13)/International Conference on Nano-Science and Technology (ICN+T2007), Stockholm, Sweden, Toru Akiyama, Hiroyuki Kageshima, Masashi Uematsu and Tomonori Ito, "Microscopic processes of oxidation reaction at SiO2/Si(100) interfaces with oxidation-induced strain", TSFE-Or3.
• 2 Jul. 2007, 17th International Vacuum Congress (IVC17)/13th International conference on Surface Science (ICSS13)/International Conference on Nano-Science and Technology (ICN+T2007), Stockholm, Sweden, Shin Yabuuchi, Hiroyuki Kageshima, Yukinori Ono, Masao Nagase, Akira Fujiwara and Eiji Ohta, "Theoretical study on magnetic properties of manganese nanosilicide in silicon", NSP1-118.
• 2 Jul. 2007, 17th International Vacuum Congress (IVC17)/13th International conference on Surface Science (ICSS13)/International Conference on Nano-Science and Technology (ICN+T2007), Stockholm, Sweden, Masao Nagase, Hiroki Hibino, Hiroyuki Kageshima, and Hiroshi Yamaguchi, "Local conductance measurement of few-layer graphen on SiC substrate using an integrated nanogap probe", NSP1-87.
• 11 Jun. 2007, The 2007 Silicon Nanoelectronics Workshop (SNW2007), Kyoto, Japan, Shin Yabuuchi, Yukinori Ono, Masao Nagase, Hiroyuki Kageshima, Akira Fujiwara, and Eiji Ohta, "Magnetic properties of manganese nanosilicide in silicon", 7-3.
• 30 May 2007, The 1st Conference of New Diamond and Nano Carbons (NDNC), Toyonaka, Osaka, Japan, Hiroyuki Kageshima and Makoto Kasu, "Theoretical Study of Al adsorption on clean, H-, and O-terminated diamond (100) surfaces".
• 9 May 2007, 211th Meeting of The Electrochemical Society, Ninth International Symposium on Silicon Nitride, Silicon Dioxide Insulating Films and Emerging Dielectrics, Chicago, Ilinois, USA, Hiroyuki Kageshima, "Microscopic Mechanism of Silicon Oxidation Process" (Invited).
• 9 Nov. 2006, 2006 International Workshop on Dielectric Thin Films for Future ULSI Devices --Science and Technology -- (IWDTF2006), Kawasaki, Japan, Toru Akiyama, Hiroyuki Kageshima, Masashi Uematsu, and Tomonori Ito, "Suppression of oxidation reaction by oxidation-induced strain at ultrathin Si-oxide/Si interface", P2-3.
• 9 Nov. 2006, 2006 International Workshop on Dielectric Thin Films for Future ULSI Devices -- Science and Technology -- (IWDTF2006), Kawasaki, Japan, Hiroyuki Kageshima and Masashi Uematsu, "Theoretical study on emission of Si-related species at Si-oxide/Si interfaces", S3-4.
• 14 Sep. 2006, International Conference on Solid State Devices and Materials (2006 SSDM), Yokohama, Japan, Hiroyuki Kageshima, Masashi Uematsu, Toru Akiyama and Tomonori Ito, "Microscopic Mechanism of Oxygen Transport during Thermal Silicon Oxidation", P-1-23.
• 27 Jul. 2006, 28th International Conference of Physics of Semiconductors (28th ICPS), Wien, Austria, Hiroyuki Kageshima and Masashi Uematsu, "Strain dependence of stabilities of Si-related defects in Si-oxide", ThM1e.3.
• 25 Jul. 2006, 28th International Conference of Physics of Semiconductors (28th ICPS), Wien, Austria, Hiroyuki Kageshima, Akihito Taguchi and Kazumi Wada, "Theoretical comparison of nitrogen-doping effects on silicon crystal growth with oxygen-doping effects", TuA3g.2.
• 18 Apr. 2006, Computational Science Workshop 2006 (CSW2006), Tsukuba, Ibaraki, Japan, Kazuyuki Uchida, Hiroyuki Kageshima, Hiroshi Inokawa, Satoru Ohno, Shin Yabuuchi, Hideyuki Maki and Tetsuya Sato, "Ferromagnetic Phase Transition Induced by Field-Effect Doping -- A First-Principles Prediction --".
• 28 Feb. 2006, International Symposium on Mesoscopic Superconductivity and Spintronics 2006 (MS+S2006), Atsugi, Kanagawa, Japan, Kazuyuki Uchida, Hiroyuki Kageshima, Hiroshi Inokawa, Satoru Ohno, Shin Yabuuchi, Hideyuki Maki and Tetsuya Sato, "Modulated Ferromagnetism of the Pd Thin Film by Electric Field -- A First-Principles Prediction --, PTu-33.
• 28 Feb. 2006, International Symposium on Mesoscopic Superconductivity and Spintronics 2006 (MS+S2006), Atsugi, Kanagawa, Japan, Shin Yabuuchi, Eiji Ohta and Hiroyuki Kageshima, "Strain effects on Mn in Si: First-principles study", PMo-30.
• 17 Nov. 2005, International Symposium on Surface Science and Nanotechnology (ISSS-4), Omiya, Saitama, Japan, Hiroyuki Kageshima, Masashi Uematsu, Kazuto Akagi, Shinji Tsuneyuki and Kenji Shiraishi, "Theoretical Study on Atomic Structures of Thermally Grown Silicon Oxide/Silicon Interfaces", Th-A8.
• 14 Nov. 2005, International Symposium on Surface Science and Nanotechnology (ISSS-4), Omiya, Saitama, Japan, Kazuyuki Uchida, Hiroyuki Kageshima, and Hiroshi Inokawa, "First-principles study of field-effect doping in nano-scale systems by the enforced Fermi-energy difference method", P1-12.
• 20 Sep. 2005, Psi-k 2005 Conference, Schwoebisch Gmuend, Germany, Kazuyuki Uchida, Hiroyuki Kageshima, and Hiroshi Inokawa, "First-principles study of field-effect doping in SrTiO3 by the enforced Fermi-energy difference method", N10.
• 25 Aug. 2005, 17th International Conference on Ion-Surface Interactions, Zvenigorod, Russia, Shigetaka Hosoi, Kaoru Nakajima, Motofumi Suzuki, Kenji Kimura, Yasuo Shimizu, Shigeto Fukatsu, Kohei M. Itoh, Masashi Uematsu, Hiroyuki Kageshima, and Kenji Shiraishi, "Oxidation of Si(001) studied by High-Resolution RBS in Combination with Stable Isotope Tracing" (invited).
• 28 Jul. 2005, 23d International Conference on Defects in Semiconductors (ICDS-23), Awaji Island, Hyogo, Japan, Shin Yabuuchi, Eiji Ohta, Hiroyuki Kageshima, and Akihito Taguchi, "First-principles study of strain effects on Mn in Si", ThP.64.
• 28 Jul. 2005, 23d International Conference on Defects in Semiconductors (ICDS-23), Awaji Island, Hyogo, Japan, Hiroyuki Kageshima, Masashi Uematsu, Kazuto Akagi, Shinji Tsuneyuki, Toru Akiyama, and Kenji Shiraishi, "Mechanism of oxide deformation during silicon thermal oxidation", ThP.7.
• 27 Jul. 2005, 23d International Conference on Defects in Semiconductors (ICDS-23), Awaji Island, Hyogo, Japan, Akihito Taguchi, Hiroyuki Kageshima, and Kazumi Wada, "Theoretical study for vacancy supersaturation during silicon crystal growth and nitrogen doping effects", TuP.20.
• 26 Jun. 2005, 17th International Conference on Ion Beam Analysis, Sevilla, Spain, Shigetaka Hosoi, Kaoru Nakajima, Motofumi Suzuki, Kenji Kimura, Yasuo Shimizu, Shigeto Fukatsu, Kohei M. Itoh, Masashi Uematsu, Hiroyuki Kageshima, and Kenji Shiraishi, "Observation of Si emission during thermal oxidation of Si(001) with high-resolution RBS".
• 23 May 2005, Fourth International Conference on Silicon Epitaxy and Heterostructures (ICSI-4), Awaji Island, Hyogo, Japan, Masashi Uematsu, Hiroyuki Kageshima, Shigeto Fukatsu, Kohei Itoh, and Kenji Shiraishi, 23B-2, "Enhanced Si and B Diffusion in Semiconductor-Grade SiO2 and the Effect of Strain on Diffusion" (invited).
• 23 May 2005, Fourth International Conference on Silicon Epitaxy and Heterostructures (ICSI-4), Awaji Island, Hyogo, Japan, Toru Akiyama, Keiji Kawamoto, Hiroyuki Kageshima, Masashi Uematsu, Koji Nakamura and Tomonori Ito, 23P1-36, "A First-principles Study of O2 Diffusion in Compressively Strained High-Density Silicon Oxides".
• 25 Jul. 2005, 23d International Conference on Defects in Semiconductors (ICDS-23), Awaji Island, Hyogo, Japan, Akihito Taguchi, Hiroyuki Kageshima, and Kazumi Wada, "Theoretical study for vacancy supersaturation during silicon crystal growth and nitrogen doping effects", TuP.20.
• 28 Jul. 2005, 23d International Conference on Defects in Semiconductors (ICDS-23), Awaji Island, Hyogo, Japan, Shin Yabuuchi, Eiji Ohta, Hiroyuki Kageshima, and Akihito Taguchi, "First-principles study of strain effects on Mn in Si", ThP.64.
• 28 Jul. 2005, 23d International Conference on Defects in Semiconductors (ICDS-23), Awaji Island, Hyogo, Japan, Hiroyuki Kageshima, Masashi Uematsu, Kazuto Akagi, Shinji Tsuneyuki, Toru Akiyama, and Kenji Shiraishi, "Mechanism of oxide deformation during silicon thermal oxidation", ThP.7.
• 23 May 2005, Fourth International Conference on Silicon Epitaxy and Heterostructures (ICSI-4), Awaji Island, Hyogo, Japan, Masashi Uematsu, Hiroyuki Kageshima, Shigeto Fukatsu, Kohei Itoh, and Kenji Shiraishi, 23B-2, "Enhanced Si and B Diffusion in Semiconductor-Grade SiO2 and the Effect of Strain on Diffusion" (invited).
• 3 Mar. 2005, Third Internatioinal Conference on Molecular Electronics and Bioelectronics (M&BE3), Tokyo, Japan, Kazuyuki Uchida, Hiroyuki Kageshima and Hiroshi Inokawa, 3P-C29, "First-principles Study of Electrode Effects on Single-Electron Molecular Devices".
• 9 Dec. 2004, The 12th Internatioinal Colloquium on Scannning Probe Microscopy (ICSPM12), Higashi-Izu, Japan, Kazuyuki Uchida, Hiroyuki Kageshima and Hiroshi Inokawa, 4.15, "Charge Injection Effects in a Single Phenyldithiol Molecule".
• 1 Dec. 2004, The 2004 Fall Meeting of Materials Research Society (MRS), Boston, USA, Kazuyuki Uchida, Hiroyuki Kageshima and Hiroshi Inokawa, II7.12, "Ab-initio Study of Redox Effects on Atomic and Electronic Structure of 4,4'-Terphenyldithiol".
• 2 Sep.2004, International Conference on Simulation of Semiconductor Processes and Devices (SISPAD2004), Munich, Germany, Masashi Uematsu, Hiroyuki Kageshima, and Kenji Shiraishi, 'Effect of Stress on Pattern-Dependent Oxidation of Silicon Nanostructures'.
• 27 Jul. 2004, 27th International Conference on the Physics of Semiconductors (ICPS27), Flagstaff, Arizona, USA, J5.093, Hiroyuki Kageshima, Akihito Taguchi, and Kazumi Wada, "Defect kinetics of O-V-N complexes in Si ingot growth based on first-principles calculations and thermodynamics".
• 27 Jul. 2004, 27th International Conference on the Physics of Semiconductors (ICPS27), Flagstaff, Arizona, USA, Hiroyuki Kageshima, Masashi Uematsu, Kazuto Akagi, Shinji Tsuneyuki, Toru Akiyama, and Kenji Shiraishi, H5.108, "First-principles study of excess Si-atom stability around Si-oxide/Si interfaces".
• 27 Jul. 2004, 27th International Conference on the Physics of Semiconductors (ICPS27), Flagstaff, Arizona, USA, H5.113, Toru Akiyama and Hiroyuki Kageshima, "Microscopic Theory of Oxygen Reaction Mechanisms at SiO2/Si(100) Interface".
• 28 May 2004, 2004 International Workshop on Dielectric Thin Films for Future ULSI Devices: Science and Technology (IWDTF2004), Tokyo, Japan, Hiroyuki Kageshima, Masashi Uematsu, Kazuto Akagi, Shinji Tsuneyuki, Toru Akiyama, and Kenji Shiraishi, "Theoretical Study of Excess Si Emitted from Si-Oxide/Si Interfaces".
• 28 May 2004, 2004 International Workshop on Dielectric Thin Films for Future ULSI Devices: Science and Technology (IWDTF2004), Tokyo, Japan, Toru Akiyama, Hiroyuki Kageshima, and Tomonori Ito, "First-principles Analyses of O2 Molecules around Ultrathin SiO2/Si(100) Interface".
• 27 May 2004, 2004 International Workshop on Dielectric Thin Films for Future ULSI Devices: Science and Technology (IWDTF2004), Tokyo, Japan, Shigeto Fukatsu, Kohei M. Itoh, Masashi Uematsu, Hiroyuki Kageshima, Yasuo Takahashi, and Kenji Shiraishi, "The effect of the Si/SiO2 interface on boron diffusion in SiO2".
• 27 May 2004, A2004 International Workshop on Dielectric Thin Films for Future ULSI Devices: Science and Technology (IWDTF2004), Tokyo, Japan, Masashi Uematsu, Hiroyuki Kageshima, Yasuo Takahashi, Shigeto Fukatsu, Kohei M. Itoh, and Kenji Shiraishi, "Enhancement of Si Self-Diffusion by the Existence of B in SiO2".
• 1 Dec. 2003, The 2003 Fall Meeting of the Materials Research Society, Boston, MA, USA, Hiroo Omi, Masashi Uematsu, Hiroyuki Kageshima, and Toshio Ogino, E3.4, "Kinetics of thermal oxidation at the Si(001)-SiO2 interface".
• 1 Dec. 2003, The 2003 Fall Meeting of the Materials Research Society, Boston, MA, USA, Toru Akiyama and Hiroyuki Kageshima, E3.7, "First-principles investigation for reaction of oxygen at ultrathin Si-oxide/Si interface".
• 1 Dec. 2003, The 2003 Fall Meeting of the Materials Research Society, Boston, MA, USA, Hiroyuki Kageshima, Akihito Taguchi, and Kazumi Wada, KK2.8, "First-principles investigations of N-V-O complexes in Si".
• 1 Dec. 2003, The 2003 Fall Meeting of the Materials Research Society, Boston, MA, USA, Hiroyuki Kageshima, Toru Akiyama, Kazuto Akagi, Masashi Uematsu, Kenji Shiraishi, and Shinji Tsuneyuki, E3.10, "First-principles study of behaviour of excess Si atoms around ultra-thin Si-oxide/Si interfaces".
• 24 Oct. 2002, Fourth International Symposium on Control of Semiconductor Interfaces (ISCSI-4), Karuizawa, Japan, Tomonori Ito, Kohji Nakamura, Yoshihiro Kangawa, Kenji Shiraishi, Akihito Taguchi and Hiroyuki Kageshima, "Systematic theoretical investigations of miscibility in Si1-x-yGexCy thin films".
• 20 Nov. 2003, 7th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-7), Nara, Japan, Hiroyuki Kageshima, Toru Akiyama, Kazuto Akagi, Masashi Uematsu, Kenji Shiraishi, and Shinji Tsuneyuki, 20D68, "Stability of excess Si defects near SiO2/Si(100) interfaces".
• 17 Sep. 2003, 2003 International Conference on Solid State Devices and Materials (SSDM2003), Tokyo, Japan, Toru Akiyama and Hiroyuki Kageshima, P3-21L, "Origin of Interfacial Reaction Constant for Si Thermal Oxidation".
• 29 Jul. 2003, 22th International Conference on Defects in Semiconductors (ICDS-22), Aahus, Denmark, Hiroyuki Kageshima, Akihito Taguchi and Kazumi Wada, PA106, "Formation of stable N-V-O complex in Si".
• 1 May 2003, 203th Meeting of the Electrochemical Society (203th ECS), Paris, France, Masashi Uematsu, Hiroyuki Kageshima and Kenji Shiraishi, 839, "Oxidation Simulation of Silicon Nanostructure on Silicon-on-Insulator Substrates".
• 24 Oct. 2002, Fourth International Symposium on Control of Semiconductor Interfaces (ISCSI-4), Karuizawa, Japan, Toru Akiyama and Hiroyuki Kageshima, "Microscopic mechanism of interfacial reaction during Si oxidation".
• 21 Oct. 2002, 5th Asian Workshop on the first-principles electronic structure calculations, Seoul, Korea, Hiroyuki Kageshima, Kenji Shiraishi, Masashi Uematsu, and Toru Akiyama, "Si emission mechanism for the Si thermal oxidation" (invited).
• 6-15 Aug. 2002, XIX Congress on the International Union of Crystallography (XIX IUC), Geneva, Switzerland, Tomonori Ito, Kenji Shiraishi, Akihito Taguchi, Hiroyuki Kageshima, Yoshihiro Kangawa and Kohji Nakamura, "Teaching the mechanism of the epitaxial growth using the quantum mechanical approach" (invited).
• 29 Jul. 2002, the 26th International Conference on the Physics of Semiconductor (ICPS26), Edinburgh, UK, Toru Akiyama and Hiroyuki Kageshima, H16, "First-principles study of reaction of atomic oxygen at SiO2/Si(100) interfaces".
• 29 Jul. 2002, the 26th International Conference on the Physics of Semiconductor (ICPS26), Edinburgh, UK, Hiroyuki Kageshima, Akihito Taguchi, and Kazumi Wada, H57, "Theoretical investigation of nitrogen doping effect on aggregation processes of Si interstitials".
• 16 May 2002, 9th International Symposium on Silicon Material Science and Technology, 100th Meeting of the Electro-Chemical Society, Philadelphia, USA, Masashi Uematsu, Hiroyuki Kageshima, and Kenji Shiraishi, N1.597, "Unified Theory of Thermal Silicon Oxide Growth" (invited).
• 2 Apr. 2002, Symposium F: Defect and Impurity Engineered Semiconductors and Devices III, Materials Research Society 2002 Spring Meeting (MRS2002 Spring), San Francisco, USA, Hiroyuki Kageshima, Akihito Taguchi, and Kazumi Wada, F, "Nitrogen-doping effect in vacancy aggregation processes in Si" (invited).
• 27 Sep. 2001, 2001 International Conference on Solid State Devices and Materials (SSDM2001), Tokyo, Japan, Masashi Uematsu, Hiroyuki Kageshima, and Kenji Shiraishi, B-6-1, "Interfacial Silicon Emission in Dry Oxidation -- the Effect of H and Cl".
• 24 Aug. 2001, the Second Korea-Japan Workshop on Frontier Nanostructures on Surfaces, Cheju, Korea, Hiroyuki Kageshima, Masashi Uematsu, and Kenji Shiraishi, "Theory of Si oxide growth rate including interfacial Si emission effects" (invited).
• 27-30 Jun. 2001, Biannual Conference on Insulating Films on Semiconductors 2001 (INFOS 2001), Udine, Italy, Hiroyuki Kageshima, Masashi Uematsu, and Kenji Shiraishi, "Theory of Si thermal oxide growth rate taking account of interfacial Si emission effect" (invited)
• 30 May, 2001, Electrochemical Society International Semiconductor Technology Conference (ECS-ISTC 2001), Shanghai, Chaina, Hiroyuki Kageshima, Kenji Shiraishi, and Masashi Uematsu, "Theory of Si oxide growth rate taking account of interfacial Si emission" (invited)
• 18 Oct. 2000, The International Symposium on Surface and Interface -- Properties of Different Symmetry Crossing -- 2000 (ISSI-PDSC 2000), Nagoya, Japan, Hiroyuki Kageshima, Kenji Shiraishi, and Masashi Uematsu, P-66, "New picture for the mechanism of thermal Si oxide growth process".
• 19 Sep. 2000, 25th International Conference on the Physics of Semiconductors (25th ICPS), Osaka, Japan, Kenji Shiraishi, Hiroyuki Kageshima, and Masashi Uematsu, F41, "Microscopic mechanisms of Si oxidation" (invited)
• 19 Sep. 2000, 25th International Conference on the Physics of Semiconductors (25th ICPS), Osaka, Japan, Hiroyuki Kageshima, Akihito Taguchi, and Kazumi Wada, E35, "Theoretical investigation of suppression of vacancy aggregation due to nitrogen in Si".
• 29 Nov. 1999, The 1999 Fall Meeting of the Materials Research Society, Boston, USA: H. Kageshima and K. Shiraishi, T1.3, "Universal Theory of Oxide Growth Rate on Silicon".
• 26 Oct. 1999, Third International Symposium on Control of Semiconductor Interfaces (ISCSI-3), Karuizawa, Japan: H. Kageshima, K. Shiraishi, H. Ikeda, S. Zaima, and Y. Yasuda, A1-2, "Selectivity rule for O adsorption position on dihydride Si(100) surfaces".
• 22 Oct. 1999, First International Workshop on Dielectric Thin Films for Future ULSI Devices: Science and Technology (IWDTF-1), Tokyo, Japan: H. Kageshima and K. Shiraishi, 22p-3-2, "Theory of Si Oxide growth Rate Taking Account of Interfacial Si Emission: Relation with Nitridation, Oxynitridation, and Dielectric Reliability".
• 23 Sep. 1999, 1999 International Conference on Solid State Devices and Materials (SSDM), Tokyo, Japan: H. Kageshima and K. Shiraishi, A9-3, "Universal theory of Si oxiation rate taking account of interfacial Si emission".
• 22 Sep. 1999, 1999 International Conference on Solid State Devices and Materials (SSDM), Tokyo, Japan: S. Horiguchi, M. Nagase, K. Shiraishi, H. Kageshima, Y. Takahashi, and K. Murase, D4-3, "Effect of Oxidation-Induced Strain on Potential Profile in Si SETs Using Pattern-Dependent-Oxidation (PADOX)".
• 14 Sep. 1999, International Joint Conference on Silicon Epitaxy and Heterostructures (IJC-Si), Miyagi, Japan: K. Shiraishi, K. Sumitomo, Y. Yoshimoto, H. Kageshima, Y. Kobayashi, T. Ito, T. Ogino, and M. Tsukada, D-3, "Theoretical and experimental studies on the microscopic origin of the Ge segregation on Si(001) surfaces: crucial effect of configurational entropy".
• 12 Jul. 1999, The 9th International Conference on Modulated Semiconductor Structures (MSS-9), Fukuoka, Japan: K. Shiraishi, M. Nagase, S. Horiguchi, H. Kageshima, and M. Uematsu, D19, "Designing of silicon effective quantum dots by using the oxidation-induced strain: A theoretical approach".
• 12 Jun. 1999, 1999 Silicon Nanoelectronice Workshop, S. Horiguchi, M. Nagase, K. Shiraishi, H. Kageshima, Y. Takahashi, and K. Murase, session 2, 2, "Mechanism of potential profile formation in Si SETs using pattern dependent oxidation (PADOX)".
• 2 Dec. 1998, The 1998 Fall Meeting of the Materials Research Society (MRS), Boston, USA, K. Shiraishi, M. Nagase, S. Horiguchi, and H. Kageshima, F8.34, "Theoretical investigation of effective quantum dots induced by strain in semiconductor wires".
• 30 Nov. 1998, The 1998 Fall Meeting of the Materials Research Society (MRS), Boston, USA, H. Kageshima and K. Shiraishi, C3.10, "First-principles study of physical properties of silicon emission during silicon oxidation".
• 20 Nov. 1998, International symposium on Surface and Interface: Properties of Different Symmetry Crossing, Tokyo, Japan: H. Kageshima and K. Shiraishi, FA4, "Relation between oxide growth direction and stress on silicon surfaces and at silicon-oxide/silicon interfaces".
• 10 Sep. 1998, 1998 International Conference on Solid State Devices and Materials, Hiroshima, Japan: H. Kageshima and K. Shiraishi, D-9-1, "First principles study of the oxide growth process on silicon surfaces and at silicon-oxide/silicon interfaces".
• 3. Sep. 1998, 14th International Vacuum Congress/10th International Conference on Solid Surfaces/5th International Conference on Nanometer-scale Science and Technology/10th International Conference on Quantitative Surface Analysis, Birmingham, UK: K. Shiraishi, T. Ito, Y. Y. Suzuki, H. Kageshima, K. Kanisawa, and H. Yamaguchi, SS1.ThM.1, "Microscopic Investigation of the Surface Phase Transition on GaAs(001) Surfaces".
• 13 Aug. 1998, 8th International Conference on High Pressure Semiconductor Physics, Thessaloniki, Greece: E. Yamaguchi, K. Shiraishi and H. Kageshima, 7-5, "Level-resonance transition of deep states produced by nitrogen vacancies in nitride semiconductors".
• 2 Dec. 1997, The 1997 Fall Meeting of the Materials Research Society, Boston, USA: H. Kageshima and K. Shiraishi, S5.10, "First principles study of interfacial reaction atomic process at silicon oxidation".
• 1 Dec. 1997, The 1997 Fall Meeting of the Materials Research Society, Boston, USA: H. Kageshima and K. Shiraishi, H4.3, "First principles study of photoluminescence from silicon/silicon-oxide interfaces".
• 29 Oct. 1997, The Fourth International Symposium on Atomically Controlled Surfaces and Interfaces, Tokyo, Japan: H. Kageshima and K. Shiraishi, N1, "Si-kicking-out mechanism of initial oxide formation on hydrogen-terminated Si(100) surfaces".
• 28 Oct. 1997, The Fourth International Symposium on Atomically Controlled Surfaces and Interfaces, Tokyo, Japan: K. Shiraishi, Y. Y. Suzuki, H. Kageshima, and T. Ito, J8, "Theoretical investigation of inter-surface diffusion on non-planar GaAs surfaces".
• 21 Jul. 1997, The Nineteenth International Conference on Defects in Semiconductors, Aveiro, Portugal: A. Taguchi and H. Kageshima, "Atomic configuration of oxygen negative-U center in GaAs".
• 30 Oct. 1996, Second International Symposium on Control of Semiconductor Interfaces, Karuizawa, Japan: H. Kageshima and K. Shiraishi, P2-11, "Relation between band offsets and atomic structures at silicon-silicon dioxide interfaces".
• 23 Jul. 1996, 23rd International Conference on the Physics of Semiconductors, Berlin, Germany: H. Kageshima, K. Shiraishi, and K. Takeda, TuP-193, "Electronic structures of penta-heptagonal boron-carbon networks".
• 23 Jul. 1996, 23rd International Conference on the Physics of Semiconductors, Berlin, Germany: H. Kageshima and K. Shiraishi, TuP-18, "Formalism for calculating momentum matrix elements with ultra-soft pseudopotentials".
• 22 Jul. 1996, 23rd International Conference on the Physics of Semiconductors, Berlin, Germany: H. Kageshima and K. Shiraishi, MoP-70, "Double bond formation mechanism for passivating Si/SiO2 interface states".
• 28 Sep. 1995, 13th International Vacuum Congress/9th International Conference on Solid Surfaces, Yokohama, Japan: H. Kageshima, "Effect of oxygen termination on electronic states of silicon quantum slabs".
• 10 Nov. 1993, First International Symposium on Control of Semiconductor Interfaces, Karuizawa, Japan: H. Kageshima and M. Tabe, "First-principle calculation of core level energy shifts on the initial oxidation stage of Si(111) surface".

国内会議招待講演

• 2012年2月23日, 東北大学電気通信研究所共同プロジェクト研究会「次世代デバイス応用を企図したグラフェン形成機構の解明及び制御の研究」, 東北大学片平キャンパス, 仙台, 影島博之、「第一原理計算で見たSiC(0001)上エピタキシャルグラフェン成長の初期過程」
• 2012年1月26日, 精密工学会超精密加工専門委員会研究会, 新大阪グランドパレス、新大阪, 大阪, 影島博之, 「SiC上グラフェン形成に関する理論検討」
• 2012年1月13日, 関西学院大学理工学部講演会, 関西学院大学三田キャンパス, 三田, 兵庫, 影島博之, 「第一原理計算からみたSiC上のグラフェン成長」
• 2011年11月25日, 第20回ポリマー材料フォーラム「未来を拓くポリマー材料」, タワーホール船堀, 江戸川, 東京, 2BIL02, 日比野浩樹, 田邉真一, 影島博之, 「SiCからのグラフェン成長」
• 2011年11月16日, International Seminor at Research Institute of Electric Communication, 東北大学, 仙台, Hiroyuki Kageshima, "First-principles study on mechanism of epitaxial graphene growth on SiC".
• 2011年10月14日, 日本学術振興会光電相互変換第125委員会第214回研究会『グループIVフォトニクス』, 静岡大学, 浜松, 影島博之, 「グラフェンの基礎物性」
• 2011年8月29日, 2011年秋季第72回応用物理学会学術講演会, 山形大学, 山形, シンポジウム「グラフェンエピタキシーの現状と将来展望」, 29p-H-3, 日比野浩樹, 田邉真司, 影島博之, 前田文彦, 「エピタキシャルグラフェンの成長とLEEM による評価」
• 2011年7月4日, 応用物理学会シリコンテクノロジー分科会第137回研究集会「ゲートスタック技術の進展-半導体機能界面の特性評価を中心に」, 名古屋大学, 名古屋, 影島博之, 日比野浩樹,山口浩司, 永瀬雅夫, 「SiC(0001)面上エピタキシャルグラフェンの構造と形成」
• 2011年6月21日, 東北大学電気通信研究所講演会, 東北大学, 仙台, 影島博之, 「グラフェンの基礎物性−今さら聞けないグラフェンの物理」
• 2011年3月25日, 2011年春季第58回応用物理学関係連合講演会, 神奈川工科大学, 厚木, シンポジウム「グラフェンエピタキシーの現状と将来展望」, 25p-BM-3, 日比野浩樹, 田邉真司, 影島博之, 前田文彦, 「エピタキシャルグラフェン成長とLEEM評価技術」
• 2010年6月7日, 筑波大学大学院数理物質科学研究科セミナー, 筑波大学, つくば, 影島博之, 「SiC上エピタキシャルグラフェンの形成・構造・電子物性」
• 2010年3月22日, 日本物理学会2010年春季年会, シンポジウム「基板上グラフェンの成長・評価およびグラフェンエッジ」, 岡山大学, 岡山, 影島博之, 「SiC上エピタキシャルグラフェンの原子構造と電子状態」
• 2010年3月18日, 応用物理学会2010年春季講演大会, 14.1探索的材料物性分科内招待講演, 東海大学, 平塚, 神奈川, 影島博之, 籔内真, 小野行徳, 永瀬雅夫, 藤原聡, 太田英二, 「Si中MnSiナノ粒子の磁性の起源」
• 2010年3月17日, 第４６回応用物理学会スクール（2010年春季）, 「コンピュテーショナル・マテリアル・デザイン（CMD）入門」, 東海大学, 平塚, 神奈川, 影島博之, 「半導体プロセスへの応用ーシリコン酸化を中心にー」
• 2010年1月29日, 九州大学応用力学研究所研究会「グラフェンの成長物理と物性」, 九州大学応用力学研究所, 大野城, 福岡, 影島博之, 日比野浩樹, 永瀬雅夫, 山口浩司, 「SiC(0001)上グラフェン成長のエナージェティクス」
• 2009年12月18日, 応用物理学会SiC及び関連ワイドギャップ半導体研究会第１８回講演会, 神戸国際会議場, 神戸, 兵庫, 影島博之, 日比野浩樹, 永瀬雅夫, 山口浩司, 「SiC単結晶基板上のエピタキシャルグラフェン形成と基礎物性ーデバイス展開を目指してー」
• 2009年11月20日, 早稲田大学理工学部／大学院理工学研究科講演会, 早稲田大学理工学部, 新宿, 東京, 影島博之, 「グラフェンの基礎物性とその理論 ―デバイス応用の観点から―」
• 2009年10月6日, 東北大学電気通信研究所グラフェン共同プロジェクト研究会, 東北大学電気通信研究所, 仙台, 宮城, Hiroyuki Kageshima, "Theory of graphene epitaxial growth"
• 2009年7月17日, 応用物理学会応用電子物性分科会研究例会「グラフェンの形成・基礎物性とデバイス展開」, 機械振興会館, 港, 東京, 影島博之, 「グラフェンの基礎物性とその理論−デバイス応用の観点から」
• 2009年7月17日、応用物理学会応用電子物性分科会主催研究会「グラフェンの形成・基礎物性とデバイス展開」、機械振興会館、港、東京、影島博之、「グラフェンの基礎物性とその理論−デバイス応用の観点から」
• 2009年4月1日、2009年春季第55回応用物理学関係連合講演会シンポジウム「ポストスケーリング時代をデバイス・物性物理から斬る ーこれが半導体デバイスの未来像だー」、筑波大学、つくば、影島博之、秋山亨、植松真司、伊藤智徳、「古くて新しいシリコン酸化膜の物性」、1p-ZT-6
• 2009年3月6日、第14回コンピュテーショナル・マテリアルズ・デザインワークショップ(CMD 14)、大阪大学、豊中、大阪、影島博之、「先端研究事例IV」
• 2008年11月14日、第28回表面科学学術講演会、シンポジウム２：『最先端表面研究が切り開くナノエレクトロニクスのブレークスルー：原子レベルから環境にやさしく』、早稲田大学、新宿、東京、嘉数誠、植田研二、影島博之、「ダイヤモンド半導体表面・界面研究の最近の進展」
• 2008年9月9日、第13回コンピュテーショナル・マテリアルズ・デザインワークショップ(CMD 13)、国際高等研究所、木津、京都、影島博之、「先端研究事例IV」
• 2008年3月7日、第12回コンピュテーショナル・マテリアルズ・デザインワークショップ(CMD 12)、国際高等研究所、木津、京都、影島博之、「先端研究事例IV―デバイス開発と第一原理計算」
• 2007年9月22日、日本物理学会シンポジウム「コンピューテショナル・マテルアルズ・デザイン(CMD(R))先端事例」、北海道大学、札幌、影島博之、「第一原理計算のSiプロセスへの応用と新しい物理量計算手法の開発」、22pWA-7
• 2007年9月14日、第11回コンピュテーショナル・マテリアルズ・デザインワークショップ(CMD 11)、国際高等研究所、木津、京都、影島博之、「先端研究事例IV―Si熱酸化のメカニズム」
• 2007年3月9日、第10回コンピュテーショナル・マテリアルズ・デザインワークショップ(CMD 10)、国際高等研究所、木津、京都、影島博之、「先端研究事例IV―手法開発と産業応用―」
• 2006年12月1日、応用物理学会シリコンテクノロジー分科会研究集会「45nmプロセスを実現可能とする大口径Siウェーハの研究開発−不純物や欠陥の新評価技術、強度維持、計算機シミュレーション−」、虎ノ門、東京、影島博之、田口明仁、和田一実、「シリコン結晶成長における添加窒素の役割」
• 2006年9月6日、第9回コンピュテーショナル・マテリアルズ・デザインワークショップ(CMD 9)、国際高等研究所、木津、京都、秋山亨、影島博之、「 先端研究事例III―シリコン熱酸化のメカニズム」
• 2006年5月18日、大阪大学大学院工学系研究科精密科学専攻 21世紀COE「原子論的生産技術の創出拠点」ワークショップ 「次世代半導体デバイス開発における計算科学の現状と将来」、大阪大学先端科学イノベーションセンター先導的研究棟、吹田、大阪、影島博之、「シリコン熱酸化プロセスの微視的理解」
• 2006年3月11日、第8回コンピュテーショナル・マテリアルズ・デザインワークショップ(CMD 8)、国際高等研究所、木津、京都、影島博之、「先端研究事例VI―第一原理計算のSiプロセスへの応用と新しい物理量計算手法の開発」
• 2006年3月1日、東北大学電気通信研究所プロジェクト研究会、東北大学学際研究センター、仙台、影島博之、秋山亨、植松真司、伊藤智徳、「シリコン熱酸化における原子輸送機構と歪み」
• 2006年2月1日、日本学術振興会結晶加工と評価技術第145委員会第105回研究会、弘済会館、四谷、東京、影島博之、「Si熱酸化における原子輸送機構と歪み」
• 2005年9月19日、日本物理学会2005年秋季大会領域10招待講演、同志社大学、京田辺、影島博之、「Si酸化における原子輸送の物理」、 19aYN-7
• 2005年9月9日、応用物理学会2005年秋季講演大会シンポジウム「ULSIプロセス・デバイス技術と計算科学の融合」、徳島大学、徳島、影島博之、植松真司、「熱酸化過程の統一的理解に向けてー実験と理論によるアプローチ」、9p-ZK-3
• 2004年10月29日、日本材料学会分子動力学部門分科会第6回研究会、東京大学、文京、東京、影島博之、「SiO2/Si界面とその熱酸化による形成過程」
• 2004年10月27日、東京大学工学部マテリアル工学科「応用マテリアル工学」特別講義、「Siデバイスにおける原子レベルシミュレーション」
• 2004年2月6日、応用物理学会シリコンテクノロジー分科会第59回研究会、学習院大学、目白、東京、影島博之、田口明仁、和田一実、「Si結晶中のN-V-O複合体形成の理論的検討」
• 2003年9月24日、第13回格子欠陥フォーラム、下電ホテル、倉敷、岡山、影島博之、「Si結晶成長とSi熱酸化過程のおける点欠陥の役割」
• 2000年12月1日、表面科学会講演大会、早稲田大学、新宿、東京、影島博之、「シリコン熱酸化における酸化膜成長と界面シリコン放出」
• 2000年6月5日、TCAD産学協議会研究会、慶応大学、港北、横浜、影島博之、「極薄酸化膜形成のためのシリコン酸化速度モデル」
• 2000年3月23日、2000年日本物理学会春の分科会シンポジウム「Si熱酸化の物理的描像の革新：膜成長と構造欠陥の挙動の統合的理解に向けて」、関西大学、吹田、大阪、影島博之、「Si熱酸化による界面でのSi原子放出の理論的検討」
• 2000年2月16日、財団法人宇宙環境利用推進センター第8回「シリコンの固液界面の状態と挙動の非平衡的解析」研究会、新宿、東京、影島博之、「シリコン結晶中点欠陥の挙動に関する理論研究−窒素添加効果と酸化効果−」
• 2000年1月21日、応用物理学会薄膜表面分科会・シリコンテクノロジー研究会主催特別研究会「極薄シリコン酸化膜の形成・評価・信頼性」(第5回)、御殿場、静岡、白石賢二、影島博之、植松真司、「原子レベルの酸化過程とマクロスコピックな酸化現象との関係」
• 2000年1月14日、日本学術振興会超高純度材料における表面安定化と初期酸化に関する研究開発専門委員会第7回委員会、麹町、東京、影島博之、「シリコン初期酸化と格子間シリコン原子放出の関係」
• 1999年11月25日、「シリコン材料の科学と技術に関する第２回フォーラム」、かずさアカデミア、木更津、千葉、影島博之、田口明仁、和田一実, 「窒素導入のシリコン結晶中欠陥形成への影響の理論的検討」
• 1998年10月22日、平成12年度東北大学電気通信研究所共同プロジェクト研究会「半導体エピタキシャル成長の原子レベル制御に関する研究」、秋保、仙台、影島博之、白石賢二、「シリコン表面界面の酸化の理論」
• 1999年10月4日、電気学会・極微構造集積デバイス調査専門委員会10月期委員会、市ヶ谷、東京、影島博之、白石賢二、植松真司、「原子のレベルから見直したシリコン酸化プロセス」
• 1998年10月2日、日本電子工業振興協会コンピュータ支援電子材料設計専門委員会、芝、東京、影島博之、「第一原理から見たシリコン酸化プロセス」
• 1998年9月16日、1998年秋期応用物理学会学術講演会シンポジウム「ヘテロ界面における欠陥制御」、広島大学、東広島、広島、影島博之、白石賢二、「SiO2/Si界面における欠陥生成の理論」
• 1997年10月10日、日本物理学会格子欠陥分科会主催格子欠陥フォーラム、豊中、大阪、「第一原理計算から見たSiO2/Si界面の物理」
• 1997年1月10日、応用物理学会薄膜表面分科会主催特別研究会「極薄シリコン酸化膜の形成・評価・信頼性」(第2回)、嵐山、埼玉、影島博之、白石賢二、「シリコン酸化膜界面における原子構造と電子状態の関係」
• 1996年11月20日、JRCATシンポジウム「シリコン酸化の物理」、つくば、茨城、影島博之、白石賢二、「シリコン酸化膜界面における原子構造と電子状態の関係」

解説記事等

• 日比野浩樹, 田邉真一, 影島博之, 「SiCの熱分解によるグラフェン成長とLEEM評価技術」, 月刊『ディプレイ』, vol.17, No.10, pp. 21-26 (2011年10月)
• 影島博之, 日比野浩樹, 田邉真一, 「グラフェン」, 月刊『機能材料』, 2011, 5月号, pp. 56-62 (2011年5月)
• 日比野浩樹, 田邉真一, 影島博之, 「SiC の熱分解によるグラフェン成長」, 『グラフェン・イノベーション −−電子デバイスを変えるナノカーボン材料革命』, 日経BP社, pp. 146-153 (2011年2月)
• 日比野浩樹, 田邉真一, 影島博之, 「SiC上エピタキシャルグラフェンの成長と評価」, 固体物理 第45巻 第11号 特集号「ディラック電子系の固体物理」, pp. 645-655 (2010年11月)
• 影島博之, 日比野浩樹, 永瀬雅夫, 山口浩司, 「SiC上エピタキシャルグラフェン成長の理論検討」, 日本結晶成長学会誌, vol. 37, No. 3, pp. 190-195 (2010年10月)
• 日比野浩樹、田邉真一、影島博之, 「シリコンカーバイト上に成長したエピタキシャルグラフェン」, 「NEW DIAMOND」, 第99号, pp. 23-27 (2010年10月)
• Hiroki Hibino, Hiroyuki Kageshima, and Masao Nagase, "Graphene growth on silicon carbide", 'NTT Technical Review', vol. 8, No. 8 (Augast 2010).
• 影島博之, 「ダイヤモンド界面とグラフェン成長の理論検討」, 「NEW DIAMOND」, vol. 98, No. 3, pp. 13-18 (2010年7月)
• 日比野浩樹, 影島博之, 永瀬雅夫, 「シリコンカーバイト上のグラフェン成長」, 「NTT技術ジャーナル」第22巻, 第6号, pp. 18-21 (2010年6月)
• 影島博之、「新しい機能性ナノ構造開発のための計算物理技術」、「NTT技術ジャーナル」第19巻、第2号、pp. 6-8 (2007年2月)。
• Hiroyuki Kageshima, "Computational physics technologies for developing novel functional nanostructures", 'NTT Technical Review', vol.4, No.11, pp. 12-16 (November 2006).
• 影島博之、基礎講座<分子シミュレーションの基礎と応用>「第一原理計算法I」、「応用物理」第75巻、第10号、pp. 1258-1265 (2006年10月)
• 影島博之、白石賢二、植松真司、「シリコン熱酸化の新しい描像」、「固体物理」第37巻、第2号、pp. 61-71 (2002年2月)
• 植松真司、影島博之、白石賢二、「シリコン酸化膜形成のシミュレーション」、「表面科学」第23巻、第2号、pp.104-110 (2002年2月)
• 影島博之、白石賢二、植松真司、「極薄シリコン酸化膜形成の理論」、「真空」第44巻、第8号、pp. 701-706 (2001年8月)
• 影島博之、白石賢二、植松真司、「Si/SiO2界面形成における歪みの役割」、「表面科学」第21巻、第6号、pp. 361(43)-366(48) (2000年6月)
• 影島博之、基礎講座<半導体材料・プロセスの物理と設計>「半導体プロセスにおける表面反応の理解」、「応用物理」第68巻、第11号、pp. 1280-1284 (1999年)

著書

• 日本表面科学会編、「新訂版・表面科学の基礎と応用」、エヌ・ティー・エス (東京、2004年6月22日)、pp. 70-93.
• 白石賢二、伊藤智徳、影島博之共著、「ナノエレクトロニクスと計算科学」、社団法人電子情報通信学会 (東京、2001年11月1日)、pp. 1-150.
• Masaru Tsukada, Katsuyoshi Kobayashi, Nobuyuki Isshiki, Satoshi Watanabe, and Hiroyuki Kageshima, "The Role of Tip Atomic and Electronic Structure in Scanning Tunneling Microscopy and Spectroscopy", Springer Series in Surface Sciences, Vol 29, 'Scanning Tunneling Microscopy III', editted by R. Wiesendanger and H.-J. Gruntherodt, Springer-Verlag (Berlin, 1993), pp. 77-103.

特許

• 出願番号特願2011- 51146, 登坂仁一郎, 西口克彦, 小野行徳, 影島博之, 藤原聡, 「半導体発光素子」, 2011年3月9日審査請求。
• 出願番号特願2010-162612, 影島博之, 日比野浩樹, 永瀬雅夫, 関根佳明, 山口浩司, 藤原聡, 「磁気電気効果素子」, 2010年7月20日審査請求。
• 出願番号特願2008-228654, 嘉数誠, 山内喜晴, 植田研二, 影島博之, 「ダイヤモンド電界効果トランジスターおよびその製造方法」, 2008年9月5日審査請求。
• 出願番号特願2008-226923, 永瀬雅夫, 日比野浩樹, 影島博之, 山口浩司, 「抵抗可変電子素子」, 2008年9月4日審査請求。
• 出願番号特願2007-333174, 嘉数誠, 植田研二, 影島博之, 「ダイヤモンド電界効果トランジスタ」, 2007年12月25日審査請求。
• 出願番号特願平10-305370, 白石賢二, 永瀬雅夫, 堀口誠二, 小野行徳, 影島博之, 「半導体量子井戸構造およびその構造方法」, 1998年10月27日審査請求, 2005年1月27日特許査定。
• 出願番号特願平8-177638, 影島博之, 白石賢二, 「物質の光学特性のシミュレーション方法」, 1996年6月17日審査請求。