Hiroyuki Kageshima'S HOME PAGE

Hiroyuki Kageshima, Dr. Sci.
Japanese version is here.

HOME PAGE of Nanodevices Reserch Group HOME PAGE of NTT Basic Res. Labs.

Biography

Senior Research Scientist, NTT Basic Research Laboratories, Nippon Telegraph and Telephone (NTT) Corporation. Joint Graduate Program Visiting Professor of Department of Nanosystem Science, Graduate School of Nanobioscience, Yokohama City University. Visiting Professor of Research Institute of Electrical Communication, Tohoku University. Visiting Lecturer of Graduate School of Science and Technology, Keio University.
JJAP Paper Award of Japanese Society of Applied Physics in 2000. Best Poster Paper Award of Fall Meeting of the Materials Research Society (Boston, USA) in 1997.
Member of the Japanese Society of Physics (JPS) and the Society of Applied Physics of Japan (JAPS). Comittee of Silicon-Technology Section of JAPS, Steering Comittee of Thin Films and Surface Physics Section of JAPS, and Comittee of Gate Stack Workshop.

Research Interests

Development of novel materials (graphene, silicon-carbide, diamond, etc.) and function search for electonics
Physics in materials and fablication processes for semiconductor (silicon, etc.) devices
Physical properties of surfaces, interfaces, dopants and nano structures
Development of new theoretical methods based on electronic structures of materials

Publications

Shinichi Tanabe, Yoshiaki Sekinie, Hiroyuki Kageshima, and Hiroki Hibino, "Electrical Characterization of Bilayer Graphene Formed by Hydrogen Intercalation of Monolayer Graphene on SiC(0001)", Jpn. J. Appl. Phys., accepted.
Yukinori Ono, Yasuaki Miyazaki, Shin Yabuuchi, Hiroyuki Kageshima, Masao Nagase, Akira Fujiwara, and Eiji Ohta, "Significance of the interface regarding magnetic properties of manganese nanosilicide in silicon", Thin Solid Films 519, 8505-8508 (2011).
Shinichi Tanabe, Yoshiaki Sekine, Hiroyuki Kageshima, Masao Nagase, and Hiroki Hibino, "Carrier transport mechanism of graphene on SiC(0001)", Phys. Rev. B 84, 115458-1-5 (2011).
Hiroyuki Kageshima, Hiroki Hibino, Hiroshi Yamaguchi, and Masao Nagase, "Theoretical Study on Epitaxial Graphene Growth by Si Sublimation from SiC(0001) Surface", Jpn. J. Appl. Phys. 50, 095601-1-6 (2011).
Hiroyuki Kageshima, Hiroki Hibino, Masao Nagase, Yoshiaki Sekine, and Hiroshi Yamaguchi, "Theoretical study on magnetoelectric and thermoelectric properties for graphene devices", Jpn. J. Appl. Phys. 50, 070115-1-5 (2011).
Shinichi Tanabe, Yoshiaki Sekine, Hiroyuki Kageshima, Masao Nagase, and Hiroki Hibino, "Observation of bandgap in epitaxial bilayer graphene field effect transistors", Jpn. J. Appl. Phys. 50, 04DN04-1-4 (2011).
Masato Inoue, Yoshihiro Kangawa, Katsunori Wakabayashi, Hiroyuki Kageshima, and Koichi Kakimoto, "Tight-binding approach to initial stage of graphitization process on vicinal SiC surface ", Jpn. J. Appl. Phys. 50, 038003-1-2 (2011).
Jinichiro Noborisaka, Katsuhiko Nishiguchi, Yukinori Ono, Hiroyuki Kageshima, and Akira Fujiwara, "Strong Stark effect in electroluminescence from phosphorous-doped silicon-on-insulator metal-oxide-semiconductor field-effect transistors", Appl. Phys. Lett. 98, 033503-1-3 (2011).
Hiroyuki Kageshima, Hiroki Hibino, Masao Nagase, Yoshiaki Sekine, and Hiroshi Yamaguchi, "Atomic Structure and Physical Properties of Epitaxial Graphene Islands embedded in SiC(0001) Surfaces", Appl. Phys. Express 3, 115103-1-3 (2010).
Hiroyuki Kageshima, "Study of Thermoelectric Properties of Graphene", Jpn. J. Appl. Phys. 49, 100207-1-3 (2010).
Michal Kubovic, Makoto Kasu, Hiroyuki Kageshima, and Fumihiko Maeda, "Electronic and surface properties of H-terminated diamond surface affected by NO2 gas", Diamond Related Materials 19, 889-893 (2010).
Hiroki Hibino, Hiroyuki Kageshima, and Masao Nagase, "Epitaxial few-layer graphene: toward single crystal growth", J. Phys. D: Appl. Phys. 43, 374005-1-14 (2010).
Shinichi Tanabe, Yoshiaki Sekine, Hiroyuki Kageshima, Masao Nagase, and Hiroki Hibino, "Half-integer quantum Hall effect in gate-controlled epitaxial graphene devices", Appl. Phys. Exp. 3, 075102-1-3 (2010).
Hiroyuki Kageshima and Akira Fujiwara, "Dielectric constants of atomically thin silicon channels with double gate", Appl. Phys. Lett. 96, 193102-1-3 (2010).
Masao Nagase, Hiroki Hibino, Hiroyuki Kageshima, and Hiroshi Yamaguchi, "Contact conductance measurement of partially suspended graphene on SiC", Appl. Phys. Exp. 3, 045101-1-3 (2010).
Jinichiro Noborisaka, Katsuhiko Nishiguchi, Hiroyuki Kageshima, Yukinori Ono, and Akira Fujiwara, "Tunneling spectroscopy of electron subbands in thin silicon-on-insulator metal-oxide-semiconductor field-effect transistors", Appl. Phys. Lett. 96, 112102-1-3 (2010).
Michal Kubovic, Makoto Kasu, Hiroyuki Kageshima, and Fumihiko Maeda, "Sorption properties of NO2 gas and its strong influence on hole concentration of H-terminated diamond surfaces", Appl. Phys. Lett. 96, 052101-1-3 (2010).
Hiroyuki Kageshima, Hiroki Hibino, and Masao Nagase, "Epitaxial Graphene Growth Studied by Low-energy Electron Microscopy and First-principles", Materials Science Forum 645-648, 597-602 (2010).
Hiroyuki Kageshima and Makoto Kasu, "Origin of Schottky Barrier Modification by Hydrogen on Diamond", Jpn. J. Appl. Phys. 48, 111602-1-5 (2009).
Masao Nagase, Hiroki Hibino, Hiroyuki Kagashima, and Hiroshi Yamaguchi, "Local Conductance Measurements of Double-layer Graphene on SiC substrate", Nanotechnol. 20, 445704-1-6 (2009).
Hiroki Hibino, Seigi Mizuno, Hiroyuki Kageshima, Masao Nagase, and Hiroshi Yamaguchi, "Stacking domains of epitaxial few-layer graphene on SiC(0001)", Phys. Rev. B 80, 085406-1-6 (2009).
Hiroo Omi, Hiroyuki Kageshima, Tomoaki Kawamura, Masashi Uematsu, Yoshihiro Kobayashi, Seiji Fujikawa, Yoshoyuki Tsusaka, Yasushi Kagoshima, and Junji Matsui, "Stability-instability transition of reaction fronts in thermal silicon oxidation", Phys. Rev. B 79, 245319-1-6 (2009).
Michal Kubovic, Makoto Kasu, Yoshiharu Yamauchi, Kenji Ueda, and Hiroyuki Kageshima, "Structural and Electrical Properties of hydrogen-terminated Diamond Field-effect Transistor", Diamond Related Materials 81, 796-799 (2009).
Hiroyuki Kageshima, Hiroki Hibino, Masao Nagase and Hiroshi Yamaguchi, "Theoretical Study of Epitaxial Graphene Growth on SiC(0001) Surfaces", Appl. Phys. Exp. 2, 065502-1-3 (2009).
Hiroki Hibino, Hiroyuki Kageshima, Masato Kotsugi, Fumihiko Maeda, F.-Z. Guo, and Yoshio Watanabe, "Dependence of electronic properties of epitaxial few-layer graphene on the number of layers investigated by photoelectron emission microscopy", Phys. Rev. B 79, 125437-1-7 (2009).
Satoru Ohno, Yojiro Oba, Shin Yabuuchi, Tetsuya Sato and Hiroyuki Kageshima, "Magnetism of single-walled carbon nanotube with Pd nanowire", J. Phys. Soc. Japan 77, 104713-104718 (2008).
Masao Nagase, Hiroki Hibino, Hiroyuki Kageshima, and Hiroshi Yamaguchi, "In-plane conductance measurement of graphene nanoisland using integrated nanogap probe", Nanotechnologies 19, 495701-1-6 (2008).
Hiroyuki Kageshima and Akira Fujiwara, "First-principles study on inversion layer properties of double-gate atomically thin silicon channels", Appl. Phys. Lett. 93, 043516-1-3 (2008).
Shin Yabuuchi, Hiroyuki Kageshima, Yukinori Ono, Masao Nagase, Akira Fujiwara and Eiji Ohta, "First-principles Study on Origin of Ferromagnetism for MnSi1.7 nanoparticles in Si", Phys. Rev. B 78, 045307-1-7 (2008).
Toru Akiyama, Tomonori Ito, Hiroyuki Kageshima, and Masashi Uematsu, "Stress dependence of oxidation reaction at SiO2/Si interfaces during silicon thermal oxidation", Jpn. J. Appl. Phys. 47, 7089-7093 (2008).
Hiroki Hibino, Hiroyuki Kageshima, and Makio Uwaha, "Instability of steps during Ga deposition on Si(111)", Surf. Sci. 602, 2421-2426 (2008).
Makoto Kasu, Kenji Ueda, Hiroyuki Kageshima, and Yoshiharu Yamauchi, "RF equivalent-circuit analysis of p-type diamond field-effect transistors with hydrogen surface termination", IEICE Trans. Electronics E91C, 1042-1049 (2008).
Hiroki Hibino, Hiroyuki Kageshima, F.-Z. Guo, Fumihiko Maeda, Masato Kotsugi, and Yoshio Watanabe, "Two-dimensional emission patterns of secondary electrons from graphene layers formed on SiC(0001)", Appl. Surf. Sci. 254, 7596-7599 (2008).
Hiroki Hibino, Hiroyuki Kageshima, Fuminiko Maeda, Masao Nagase, Yasuyuki Kobayashi, Yoshihiro Kobayashi, and Hiroshi Yamaguchi, "Thickness Determination of Graphene Layers Formed on SiC Using Low-Energy Electron Microscopy", e-J. Surf. Sci. Nanotech. 6, 107-110 (2008).
Shin Yabuuchi, Yukinori Ono, Masao Nagase, Hiroyuki Kageshima, Akira Fujiwara, and Eiji Ohta, "Ferromagnetism of manganese-silicide nanoparticles in Si", Jpn. J. Appl. Phys. 47, 4487 (2008).
Makoto Kasu, Kenji Ueda, Hiroyuki Kageshima, and Yoshiharu Yamauchi, "Gate Interfacial Layer in Hydrogen-Terminated Diamond Field-Effect Transistor", Diamond Related Materials 17, 741-744 (2008).
Masao Nagase, Hiroki Hibino, Hiroyuki Kageshima, and Hiroshi Yamaguchi, "Local conductance measurement of few-layer graphene on SiC substrate using an integrated nanogap probe", J. Phys. Conf. Ser. 100, 052006 (2008).
Toru Akiyama, Tomonori Ito, Hiroyuki Kageshima, and Masashi Uematsu, "Impact of oxidation-induced strain on microscopic processes related to oxidation reaction at the SiO2/Si(100) interface", Phys. Rev. B 77, 115356-1-5 (2008).
Hiroki Hibino, Hiroyuki Kageshima, Fumihiko Maeda, Masao Nagase, Yoshihiro Kobayashi, and Hiroshi Yamaguchi, "Resonant electron transmission through discrete energy levels in thin graphite", Phys. Rev. B 77, 075413-1-7 (2008).
Shin Yabuuchi, Hiroyuki Kageshima, and Eiji Ohta, "First-principles study on uniaxial strain effects on manganese in silicon", Jpn. J. Appl. Phys. 47, 26-30 (2008).
Hiroyuki Kageshima, Masashi Uematsu, Toru Akiyama, and Tomonori Ito, "Microscopic Mechanism of Silicon Oxidation Process", Transanction of Electrochemical Society 6, 449 (2007).
Jean-Francois Morizur, Yukinori Ono, Hiroyuki Kageshima, Hiroshi Inokawa, and Hiroshi Yamaguchi, "Impact of space-energy correlation on variable range hopping in a transistor", Phys. Rev. Lett. 98, 166601 (2007).
S. Hosoi, K. Nakajima, M. Suzuki, K. Kimura, Y. Shimizu, S. Fukatsu, K. M. Itoh, M. Uematsu, H. Kageshima, and K. Shiraishi, "Observation of Si emission during thermal oxidation of Si(001) with high-resolution RBS", Nuclear Instruments and Methods in Physics Research B 249, 390-393 (2006).
Hiroyuki Kageshima, Masashi Uematsu, Toru Akiyama, and Tomonori Ito, "Oxygen trap hypothesis in silicon oxide", Jpn. J. Appl. Phys. 45, 7672-7674 (2006).
Hiroo Omi, Hiroyuki Kageshima, and Masashi Uematsu, "Scaling and universality of roughening in thermal oxidation of Si(001)", Phys. Rev. Lett. 97, 016102-1-4 (2006).
Hiroyuki Kageshima, Akihito Taguchi, and Kazumi Wada, "Theoretical study of nitrogen-doping effects on void formation processes in silicon crystal growth", J. Appl. Phys. 100, 113513-1-7 (2006).
Kazuyuki Uchida, Hiroyuki Kageshima, and Hiroshi Inokawa, "Quantum Effects in the Capacitance between a Pair of Thin and Slightly Separated SrTiO3 Slabs -- A First-principles Study --, Phys. Rev. B 74, 035408-1-6 (2006).
Hiroyuki Kageshima, Masashi Uematsu, Kazuto Akagi, Shinji Tsuneyuki, Toru Akiyama, and Kenji Shiraishi, "Theoretical Study on Atomic Structures of Thermally Grown Silicon Oxide/Silicon Interfaces", e-J. Surf. Sci. Nanotech. 4, 584-587 (2006).
Toru Akiyama, Keiji Kawamoto, Hiroyuki Kageshima, Masashi Uematsu, Koji Nakamura and Tomonori Ito, "A First-principles Study of O2 Diffusion in Compressively Strained High-Density Silicon Oxides", Thin Solid Films 508, 311-314 (2006).
Masashi Uematsu, Hiroyuki Kageshima, Shigeto Fukatsu, Kohei Itoh, Kenji Shiraishi, Minoru Ohtani and Atsushi Oshiyama, "Enhanced Si and B Diffusion in Semiconductor-Grade SiO2 and the Effect of Strain on Diffusion", Thin Solid Films 508, 270-275 (2006).
Shin Yabuuchi, Eiji Ohta, Hiroyuki Kageshima, and Akihito Taguchi, "First-principles study of strain effects on Mn in Si", Physica B 376-377, 672-676 (2006).
Hiroyuki Kageshima, Masashi Uematsu, Kazuto Akagi, Shinji Tsuneyuki, Toru Akiyama, and Kenji Shiraishi, "Mechanism of oxide deformation during silicon thermal oxidation", Physica B 376-377, 407-410 (2006).
Akihito Taguchi, Hiroyuki Kageshima, and Kazumi Wada, "Theoretical study for vacancy supersaturation during silicon crystal growth and nitrogen doping effects", Physica B 376-377, 130-132 (2006).
Kazuyuki Uchida, Hiroyuki Kageshima, and Hiroshi Inokawa, "First-Principles Study of Field-Effect Doping in Nano-Scale Systems by the Enforced Fermi-Energy Difference Method", e-J. Surf. Sci. Nanotech. 3, 453-456 (2005).
Kazuyuki Uchida, Hiroyuki Kageshima, and Hiroshi Inokawa, "Charge Injection Effects in A Single Phenyldithiol Molecule", Jpn. J. Appl. Phys. 44, 8759-8763 (2005).
Hiroyuki Kageshima, Masashi Uematsu, Kazuto Akagi, Shinji Tsuneyuki, Toru Akiyama and Kenji Shiraishi, "Transport mechanism of interfacial network forming atoms during silicon oxidation", Jpn. J. Appl. Phys. 45, 694-699 (2006).
Masashi Uematsu, Hiroyuki Kageshima and Kenji Shiraishi, "Effect of Nitrogen on Diffusion in Silicon Oxynitride", Jpn. J. Appl. Phys. 44, 7756-7759 (2005).
Toru Akiyama, Hiroyuki Kageshima, Masashi Uematsu, and Tomonori Ito, "Theoretical investigation of oxygen diffusion in compressively strained high-density alpha-quartz", Jpn. J. Appl. Phys. 44, 7427-7429 (2005).
Masayuki Tsuda, Hajime Arai, Masaya Takahashi, Hideaki Ohtsuka, Yoji Sakurai, Koji Sumitomo and Hiroyuki Kageshima, "Electrode performance of layered LiNi0.5Ti0.5O2 prepared by ion exchange", J. Power Sources 144, 183-190 (2005).
Akihito Taguchi, Hiroyuki Kageshima and Kazumi Wada, "First-principles investigations of nitrogen-doping effects on defect aggregation processes in Czochralski Si", J. Appl. Phys. 97, 053514-1-5 (2005).
Toru Akiyama and Hiroyuki Kageshima, "Reaction mechanisms of oxygen at SiO2/Si(100) interfaces", Surf. Sci. Lett. 576, L65-L70 (2005).
Masashi Uematsu, Hiroyuki Kageshima, Yasuo Takahashi, Shigeto Fukatsu, Kohei M. Ito, and Kenji Shiraishi, "Simulation of correlated diffusion of Si and B in thermally grown SiO2", J. Appl. Phys. 96, 5513-5519 (2004).
Hiroyuki Kageshima, Masashi Uematsu, Kazuto Akagi, Shinji Tsuneyuki, Toru Akiyama and Kenji Shiraishi, "Theoretical study of excess Si emitted from Si-oxide/Si interfaces", Jpn. J. Appl. Phys. 43, 8223-8226 (2004).
Toru Akiyama, Hiroyuki Kageshima, and Tomonori Ito, "First-principles Analyses of O2 Molecules around Ultrathin SiO2/Si(100) Interface", Jpn. J. Appl. Phys. 43, 7903 (2004).
Shigeto Fukatsu, Kohei M. Ito, Masashi Uematsu, Hiroyuki Kageshima, Yasuo Takahashi, and Kenji Shiraishi, "The effect of the Si/SiO2 interface on silicon and boron diffusion in thermally grown SiO2", Jpn. J. Appl. Phys. 43, 7837 (2004).
Tomonori Ito, Kazumi Tsutsumida, Kohji Nakamura, Yoshihiro Kangawa, Kenji Shiraishi, Akihito Taguchi and Hiroyuki Kageshima, "Systematic theoretical investigations of adsorption behavior on the GaAs(001)-c(4x4) surfaces", Appl. Surf. Sci. 237, 194 (2004).
Masashi Uematsu, Hiroyuki Kageshima, Yasuo Takahashi, Shigeto Fukatsu, Kohei M. Itoh, Kenji Shiraishi, and Ulrich Goesele, "Correlated diffusion of silicon and boron in thermally grown SiO2", Appl. Phys. Lett. 85, 221 (2004).
Masashi Uematsu, Hiroyuki Kageshima, Yasuo Takahashi, Shigeto Fukatsu, Kohei M. Itoh, Kenji Shiraishi, and Ulrich Goesele, "Modeling of Si self-diffusion in SiO2 taking into account the effect of the Si/SiO2 interface and evidence of time-dependent diffusion", Appl. Phys. Lett. 84, 876 (2004).
Shigeto Fukatsu, Tomonori Takahashi, Kohei M. Itoh, Masashi Uematsu, Akira Fujiwara, Hiroyuki Kageshima, Yasuo Takahashi, and Kenji Shiraishi "The effect of partial pressure of oxygen on self-diffusion of Si in SiO2", Jpn. J. Appl. Phys. 42, L1492 (2003).
Hiroyuki Kageshima, Akihito Taguchi, and Kazumi Wada, "Formation of stable N-V-O complex in Si", Physica B 340-342, 626 (2003).
Shigeto Fukatsu, Tomonori Takahashi, Kohei M. Itoh, Masashi Uematsu, Akira Fujiwara, Hiroyuki Kageshima, Yasuo Takahashi, Kenji Shiraishi, and Ulrich Goesele, "Effect of the SiO2/Si interface on self-diffusion of Si in semiconductor-grade SiO2", Appl. Phys. Lett. 83, 3897 (2003).
Masashi Uematsu, Hiroyuki Kageshima, Kenji Shiraishi, Masao Nagase, Seiji Horiguchi, and Yasuo Takahashi, "Two-Dimensional Simulation of Pattern-Dependent Oxidation of Si Nano-structures on Silicon-on-Insulator Substrates", Sol. State Engineer. 48, 1073 (2004).
Tomonori Takahashi, Shigeto Fukatsu, Kohei M. Itoh, Masashi Uematsu, Akira Fujiwara, Hiroyuki Kageshima, Yasuo Takahashi, and Kenji Shiraishi, "Self-diffusion of Si in thermally grown SiO2 under equilibrium conditions", J. Appl. Phys. 93, 3674 (2003).
Toru Akiyama and Hiroyuki Kageshima, "Microscopic mechanism of interfacial reaction during Si oxidation", Appl. Surf. Sci. 216, 270 (2003).
Tomonori Ito, Kohji Nakamura, Yoshihiro Kangawa, Kenji Shiraishi, Akihito Taguchi, and Hiroyuki Kageshima, "Systematic theoretical investigations of miscibility in Si1-x-yGexCy thin films", Appl. Surf. Sci. 216, 458-462 (2003).
David J. Bottomley, Hiroo Omi, Yoshihiro Kobayashi, Masashi Uematsu, Hiroyuki Kageshima, and Toshio Ogino, "Origin of self-assembled step and terrace formation at the Si(001)-SiO2 interface", Phys. Rev. B66, 035301-1-5 (2002).
Masashi Uematsu, Hiroyuki Kageshima and Kenji Shiraishi, "Interfacial Silicon Emission in Dry Oxidation-the Effect of H and Cl", Jpn. J. Appl. Phys. 41, 2455-2458 (2002).
Hiroyuki Kageshima, Masashi Uematsu, and Kenji Shiraishi, "Theory of Si thermal oxide growth rate taking account of interfacial Si emission effect", Microelectronics Engineering 59, 301-309 (2001).
Masashi Uematsu, Hiroyuki Kageshima, and, Kenji Shiraishi, "Microscopic Mechanism of Thermal Silicon Oxide Growth", Computational Materials Science 24, 229-234 (2002).
Masashi Uematsu, Hiroyuki Kageshima and Kenji Shiraishi, "Oxidation Simulation of Heavily Phosphorus-Doped Silicon based on the Interfacial Silicon Emission Model", Jpn. J. Appl. Phys. 40, 5197-5200 (2001).
Masashi Uematsu, Hiroyuki Kageshima and Kenji Shiraishi, "The Effect of Chlorine on Silicon Oxidation: Simulation based on the Interfacial Silicon Emission Model", Jpn. J. Appl. Phys. 40, 2217-2218 (2001).
Yuji Suwa, Jun Yamauchi, Hiroyuki Kageshima and Shinji Tsuneyuki, "First principles study of isotope effect in hydrogen-bonded K3H(SO4)2: II - Zero-point oscillation effect", Materials Scinence & Engineering B79, 98-112 (2001).
Yuji Suwa, Jun Yamauchi, Hiroyuki Kageshima and Shinji Tsuneyuki, "First principles study of isotope effect in hydrogen-bonded K3H(SO4)2: I - stable structures", Materials Scinence & Engineering B79, 31-44 (2001).
Seiji Horiguchi, Masao Nagase, Kenji Shiraishi, Hiroyuki Kageshima, Yasuo Takahashi, and Katsumi Murase, "Mechanism of potential profile formation in silicon single-electron transistors fabricated using pattern-dependent oxidation", Jpn. J. Appl. Phys. 40, L29-L32 (2001).
Masashi Uematsu, Hiroyuki Kageshima, and Kenji Shiraishi, "Simulation of wet oxidation of silicon based on the interfacial silicon emission model and comparison with dry oxidation", J. Appl. Phys. 89, 1948-1953 (2000).
Kenji Shiraishi, Hiroyuki Kageshima, and Masashi Uematsu, "Phenomenological Theory on Si Layer-by-Layer Oxidation with Small Interfacial Islands", Jpn. J. Appl. Phys. 39, L1263-L1266 (2000).
Masashi Uematsu, Hiroyuki Kageshima, and Kenji Shiraishi, "Oxidation simulation of (111) and (100) silicon substrates based on the interfacial silicon emission model", Jpn. J. Appl. Phys. 39, L1135-L1137 (2000).
Masashi Uematsu, Hiroyuki Kageshima, and Kenji Shiraishi, "Simulation of high-pressure oxidation of silicon based on the interfacial silicon emission model", Jpn. J. Appl. Phys. 39, L952-L954 (2000).
Hiroyuki Kageshima, Kenji Shiraishi, Hiroya Ikeda, Shigeaki Zaima, and Yukio Yasuda, "Selectivity rule for O adsorption position on dihydride Si(100) surfaces", Appl. Surf. Sci. 159-160, 14-18 (2000).
Masashi Uematsu, Hiroyuki Kageshima, and Kenji Shiraishi, "Unified Simulation of Silicon Oxidation Based on the Interfacial Silicon Emission Model", Jpn. J. Appl. Phys. 39, L699-L702 (2000).
Hiroyuki Kageshima, Akihito Taguchi, and Kazumi Wada, "Theoretical investigation of nitrogen-doping effect in vacancy aggregation processes in Si", Appl. Phys. Letts. 76, 3718 (2000).
Hiroyuki Kageshima, Kenji Shiraishi, and Masashi Uematsu, "Universal theory of Si oxidation rate and importance of interfacial Si emission", Jpn. J. Appl. Phys. 38, L971 (1999).
Hiroyuki Kageshima and Kenji Shiraishi, "Relation between oxide growth direction and stress on silicon surfaces and at silicon-oxide/silicon interfaces", Surf. Sci. 438, 102 (1999).
Kenji Shiraishi, Tomonori Ito, Yasuo Y. Suzuki, Hiroyuki Kageshima, Kiyoshi Kanisawa, and Hiroshi Yamaguchi, "Microscopic Investigation of the Surface Phase Transition on GaAs(001) Surfaces", Surf. Sci. 433-435, 382 (1999).
Eiichi Yamaguchi, Kenji Shiraishi and Hiroyuki Kageshima, "Level-Resonance Transition of Deep States Produced by Nitrogen Vacancies in Nitride Semiconductors", Phys. Stat. Sol. (b) 211, 157 (1999).
Akihito Taguchi and Hiroyuki Kageshima, "Diffusion and stability of oxygen in GaAs and AlAs", Phys. Rev. B 60, 5383 (1999).
Hiroyuki Kageshima and Kenji Shiraishi, "First-principles study of oxide growth on Si surfaces and at SiO2/Si interfaces", Phys. Rev. Lett. 81, 5936 (1998).
Akihito Taguchi, and Hiroyuki Kageshima, "First principle investigations of the oxygen negative-U center in GaAs", Phys. Rev. B 57, R6779 (1998).
Hiroyuki Kageshima and Kenji Shiraishi, "First principles study of photoluminescence from silicon/silicon-oxide interfaces", in Materials and Devices for Silicon-Based Optoelectronics, edited by A. Polman, S. Coffa, and R. Soref (Symposium Proceedings, vol.486, Materials Research Society, Pennsylvania, 1998) p.337.
Hiroyuki Kageshima and Kenji Shiraishi, "First principles study of interfacial reaction atomic process at silicon oxidation", in Microscopic Simulation of Interfacial Phenomena in Solids and Liquids, edited by S. R. Phillpot, P. D. Bristowe, D. G. Stroud, and J. R. Smith (Symposium Proceedings, vol.492, Materials Research Society, Pennsylvania, 1998) p.195.
Hiroyuki Kageshima and Kenji Shiraishi, "Si-kicking-out mechanism of initial oxide formation on hydrogen-terminated Si(100) surfaces", Appl. Surf. Sci. 130-132, 176 (1998).
Kenji Shiraishi, Yasuo Y. Suzuki, Hiroyuki Kageshima, and Tomonori Ito, "Theoretical investigation of inter-surface diffusion on non-planar GaAs surfaces", Appl. Surf. Sci. 130-132, 431 (1998).
Hiroyuki Kageshima and Kenji Shiraishi, "Theoretical study of valence band offset dependence on interfacial defects in silicon/silicon-oxide interfaces", Surf. Sci. 407, 133 (1998).
Hiroyuki Kageshima and Kenji Shiraishi, "Momentum matrix element calculation using pseudopotentials", Phys. Rev. B 56, 14985 (1997).
Hiroyuki Kageshima and Kenji Shiraishi, "Microscopic mechanism for SiO2/Si interface passivation: Si=O double bond formation", Surf. Sci. 380, 61 (1997).
Hiroyuki Kageshima and Kenji Shiraishi, "A method for calculating momentum matrix elements with pseudopotentials", Jpn. J. Appl. Phys. 35, L1605 (1996).
Hiroyuki Kageshima, Kenji Shiraishi, and Kyozaburo Takeda, "Electronic structures of penta-heptagonal boron-carbon networks" in '23rd International Conference on the Physics of Semiconductors', editted by Matthias Scheffler and Roland Zimmermann, World Scientific (Singapore ,1996), p. 3371.
Hiroyuki Kageshima and Michiharu Tabe, "Theoretical calculation of core level shifts for O/Si(111) surfaces", Surf. Sci. 351, 53 (1996).
Hiroyuki Kageshima, Yukinori Ono, Michiharu Tabe, and Takahisa Ohno, "Origin of dark regions in scanning tunneling microscopy images formed by thermal oxidation of Si(111) surface", Jpn. J. Appl. Phys. 33, 4070 (1994).
Yukinori Ono, Michiharu Tabe, and Hiroyuki Kageshima, "Scanning-tunneling-microscopy observation of thermal oxide growth on Si(111) 7x7 surfaces", Phys. Rev. B48, 14291 (1993).
Masaru Tsukada, Katsuyoshi Kobayashi, Nobuyuki Isshiki, Satoshi Watanabe, Hiroyuki Kageshima and Tatsuo Schimizu, "Quantum theory of scanning tunneling microscopy and spectroscopy and its application to surface electronic processes", J. Molecular Catalysis 82, 253-263 (1993).
Masaru Tsukada, Katsuyoshi Kobayashi, Nobuyuki Isshiki, Hiroyuki Kageshima, Toshihiro Uchiyama, Satoshi Watanabe, and Tatsuo Schimizu, "Novel features of surface electronic structure revealed by the theoretical simulation of scanning tunneling microscopy/spectroscopy", Surf. Sci. 287-288, 1004-1012 (1993).
Hiroyuki Kageshima and Masaru Tsukada, "Theory of scanning tunneling microscopy and spectroscopy on Si(100) reconstructed surfaces", Phys. Rev. B 46, 6928-6937 (1992).
Nobuyuki Isshiki, Hiroyuki Kageshima, K. Kobayashi, and Masaru Tsukada, "First-principles simulation of STM/STS of Si(100) reconstructed surfaces", Ultramicroscopy 42-44, 109-114 (1992).
Masaru Tsukada, Hiroyuki Kageshima, Nobuyuki Isshiki, and Katsuyoshi Kobayashi, "Connected vacuum tail method and its application to scanning tunneling microscopy", Surf. Sci. 266, 253-258 (1992).
Masaru Tsukada, K. Kobayashi, Nobuyuki Isshiki, and Hiroyuki Kageshima, "First-principles theory of scanning tunneling microscopy", Surf. Sci. Rep. 13, 265-304 (1991).
Hiroyuki Kageshima and Masaru Tsukada, "Theory of the FIM image of phthalocyanine", Surf. Sci. 236, 385-397 (1990).
Masaru Tsukada, Nobuyuki Shima, Shinji Tsuneyuki, Hiroyuki Kageshima, and Tamotsu Kondow, "Mechanism of electron attachment to van der Waals clusters: Application to carbon dioxide clusters", J. Chem. Phys. 87, 3927-3933 (1987).

Presentations in International Conferences

14 Dec. 2011, International Symposium on Surface Science -Towards Nano-, Bio-, and Green Inovation- (ISSS-6), Mizue, Tokyo, Japan: Hiroyuki Kageshima, Hiroki Hibino, Hiroshi Yamaguchi, and Masao Nagase, 14amB-1-2, "Role of steps and edges in epitaxial graphene growth on SiC(0001)".
25 Oct. 2011, The Third International Symposium on the Science and Technology of Epitaxial Graphene (STEG III), Saint Augustine, Georgia, USA: Hiroki Hibino, Shinichi Tanabe, and Hiroyuki Kageshima, "Carrier transport in epitaxial graphene grown on SiC(0001)". (invited)
30 Sep. 2011, 2011 International Conference on Solid State Devices and Materials (SSDM2011), Nagoya, Japan: Shinichi Tanabe, Yoshiaki Sekine, Hiroyuki Kageshima, and Hiroki Hibino, K-9-1, "Electrical characterization of bilayer graphene formed by hydrogen intercalation of monolayer graphene on SiC(0001)".
30 Sep. 2011, 2011 International Conference on Solid State Devices and Materials (SSDM2011), Nagoya, Japan: Hiroyuki Kageshima, Hiroki Hibino, Hiroshi Yamaguchi, and Masao Nagase, KM-6-3, "Theory on Initial Stage of Epitaxial Graphene Growth on SiC(0001)".
5 Sep. 2011, 22nd European Conference on Diamond, Diamond-Like-Materials, Carbon-Nanotubes, and Nitrides (Diamond2011), Garmisch-Partenkirchen, Germany: Masahito Inoue, Yoshihiro Kangawa, Hiroyuki Kageshima, Katsunori Wakabayashi, and Koichi Kakimoto, P1.40, "Anisotropic growth mechanism of graphene on a vicinal SiC(0001) surface".
17 Aug. 2011, XX International Materials Research Congress 2011 (IMRC), Cancun, Mexico: Hiroki Hibino, Shinichi Tanabe, and Hiroyuki Kageshima, S1-47, "Growth and electronic transport properties of monolayer and bilayer graphene on SiC". (invited)
3 Aug. 2011, The 6th International School and Conference on Spintronics and Quantum Infromation Technology (SPINTECH6), Matsue, Japan: Yoshiaki Sekine, Hiroki Hibino, Katsuya Oguri, Tatsushi Akasaki, Hiroyuki Kageshima, Masao Nagase, and Hiroshi Yamaguchi, WP-86, "Surface-enhanced Raman scattering of graphene on SiC".
24 May 2011, 8th International Symposium on Atomic Level Characterizations for New Materials and Devices '11 in conjuction with IUMAS-V (ALC '11), Seoul, South Korea: Hiroki Hibino, Shinichi Tanabe, and Hiroyuki Kageshima, 24SS07, "Growth, structure, and transport properties of epitaxial graphene grown on SiC". (invited)
20 Jan. 2011, 2011 International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Technology (IWDTF2011), Tokyo, Japan: Hiroyuki Kageshima, Hiroki Hibino, Hiroshi Yamaguchi, and Masao Nagase, P-24, "Theoretical study on epitaxial graphene growth on SiC(0001) surface".
17 Jan. 2011, Graphene Workshop in Tsukuba, Tsukuba, Japan, Hiroki Hibino, Shinichi Tanabe, and Hiroyuki Kageshima, "Growth and characterization of graphene on SiC ".
12 Jan. 2011, The International Symposium on Nanoscale Transport and Technology (ISNTT2011), Atsugi, Japan: Hiroyuki Kageshima, Hiroki Hibino, Masao Nagase, Yoshiaki Sekine, and Hiroshi Yamaguchi, PWe-10, "Theoretical study on magnetoelectric effects of embedded graphene nanoribbons on SiC(0001) surface".
12 Jan. 2011, The International Symposium on Nanoscale Transport and Technology (ISNTT2011), Atsugi, Japan: Yoshiaki Sekine, Hiroki Hibino, Katsuya Oguri, Tatsushi Akasaki, Hiroyuki Kageshima, Masao Nagase, and Hiroshi Yamaguchi, PWe-12, "Surface-enhanced Raman spectroscopy of graphene grown on SiC".
11 Jan. 2011, The International Symposium on Nanoscale Transport and Technology (ISNTT2011), Atsugi, Japan: Jin-ichiro Noborisaka, Katsuhiko Nishiguchi, Yukinori Ono, Hiroyuki Kageshima, and Akira Fujiwara, PTu-14, "Electroluminescence study of phosphorous ionization in silicon-on-insulator metal-oxide-semiconductor field-effect transistors".
2 Dec. 2010, The 2010 Fall Meeting of the Materials Research Society (MRS), Boston, USA: Shinichi Tanabe, Yoshiaki Sekine, Hiroyuki Kageshima, Masao Nagase, and Hiroki Hibino, B9.2, "Electronic transport properties of top-gated monolayer and bilayer graphene devices on SiC".
16 Nov. 2010, Japan-Korea Symposium on Surface and Nanostructure 9th (JKSSN9), Sendai, Japan: Hiroyuki Kageshima, Hiroki Hibino, Masao Nagase, Yoshiaki Sekine, and Hiroshi Yamaguchi, Session (2)-4, "Theoretical study on growth, structure, and physical properties of graphene on SiC".
4 Nov. 2010, International Conference on Solid-State _and Integrated Circuit Technology (ICSICT-2010), Shanghai, China: Hiroyuki Kageshima, "Mechanism of nanochannel formation processes: thermal oxidation of Si nanostructures and graphene formation on SiC". (invited)
29 Oct. 2010, International Symposium on Graphene Devices 2010 (ISGD2010), Sendai, Japan: Hiroyuki Kageshima, Hiroki Hibino, Masao Nagase, Yoshiaki Sekine, and Hiroshi Yamaguchi, "Theoretical study on functions of graphene". (invited)
28 Oct. 2010, International Symposium on Graphene Devices 2010 (ISGD2010), Sendai, Japan: Masao Nagase, Hiroki Hibino, Hiroyuki Kageshima and Hiroshi Yamaguchi, "Electrical contact properties of few-layer graphene on SiC substrate". (invited)
27 Oct. 2010, International Symposium on Graphene Devices 2010 (ISGD2010), Sendai, Japan: Hiroki Hibino, Shinichi Tanabe, Hiroyuki Kageshima, and Masao Nagase, "Growth, structure, and transport properties of epitaxial graphene on SiC". (invited)
23 Sep. 2010, 2010 International Conference on Solid State Devices and Materials (SSDM), Sendai, Japan: Shinichi Tanabe, Yoshiaki Sekine, Hiroyuki Kageshima, Masao Nagase and Hiroki Hibino, J-4-3, "Observation of bandgap in epitaxial bilayer graphene field effect transistors".
23 Sep. 2010, 2010 International Conference on Solid State Devices and Materials (SSDM), Tokyo, Japan: Jin-ichiro Noborisaka, Katsuhiko Nishiguchi, Yukinori Ono, Hiroyuki Kageshima, and Akira Fujiwara, F-5-4, "Strong stark effect of electroluminescence in thin SOI MOSFETs".
14 Sep. 2010, Second International Symposium on the Science and Technology of Epitaxial Graphene (STEG2), Hiroki Hibino, Hiroyuki Kageshima, Shinichi Tanabe, Masao Nagase, Seigi Mizuno, and Satoru Tanaka, "Surface Electron Microscopy of Epitaxial Graphene", Amelia Island, Florida, USA. (invited)
24 Aug. 2010, 18th International Vacuum Congress (IVC-18)/International Conference on Nanoscience and Technology (ICN+T 2010)/14th International Conference on Surfaces Science (ICSS-14)/Vacuum and Surface Sciences Conference of Asia and Australia (VASSCAA-5), Beijing, China: Masao Nagase, Hiroki Hibino, Hiroyuki Kageshima, and Hiroshi Yamaguchi, P1-EmP1-18, "Contact conductance measurement of nano-membrane structure of graphene on SiC".
26 Jul. 2010, 30th International Conference on the Physics of Semiconductors (ICPS2010), Seoul, Korea: Hiroyuki Kageshima and Akira Fujiwara, P1-030, "Effective dielectric constant of Si-nanofilm channel in the full inversion regime under field effect due to symmetric double gate".
26 Jul. 2010, 30th International Conference on the Physics of Semiconductors (ICPS2010), Seoul, Korea: Hiroyuki Kageshima, Hiroki Hibino, Masao Nagase, Yoshiaki Sekine, and Hiroshi Yamaguchi, TuD1-2, "Atomic structure of epitaxial graphene islands on SiC(0001) surfaces and their magnetoelectric effects".
25 Jul. 2010, Asia-Pacific Conference on Semiconducting Silicides and Related Materials Science and Technology Towards Sustainable Optoelectronics (APAC-SILICIDE 2010), Tsukuba, Japan: Y. Ono, Y. Miyazaki, S. Yabuuchi, H. Kageshima, M. Nagase, A. Fujiwara, and E. Ota, 25-AM-IV-4, "Significance of the Interface regarding Magnetic Properties of Mn-Nanosilicide in Silicon".
31 May 2010, International Workshop on "In situ characterization of near surface processes", Eisenerz, Austria: Hiroki Hibino, Hiroyuki Kageshima, and Masao Nagase, "In-situ surface electron microscopy observations of growth and etching of epitaxial few-layer graphene on SiC" (invited).
9 Dec. 2009, International Symposium on Atomic Level Characterizations for New Materials and Devices 2009 (ALC09), Kaanapali, Maui, Hawaii, USA: Hiroki Hibino, Hiroyuki Kageshima, and Masao Nagase, 09AM03, "Microscopic Evaluations of Structure and Electronic Properties of Epitaxial Graphene" (invited).
3 Dec. 2009, 2009 International Symposium on Advanced Nanodevices and Nanotechnology (ISANN 2009), Kaanapali, Maui, Hawaii, USA: Masao Nagase, Hiroki Hibino, Hiroyuki Kageshima, and Hiroshi Yamaguchi, "Microscopic characterization of few-layer graphene on SiC" (invited).
17 Nov. 2009, 22nd International Microprocesses and Nanotechnology Conference (MNC 2009), Sapporo, Japan, Hiroki Hibino, Hiroyuki Kageshima, and Masao Nagase, "Structure and Electronic Properties of Epitaxial Graphene Grown on SiC Studied by Surface Electron Microscopy", 17B-2-2 (invited).
12 Oct. 2009, 2009 International Conference on Silicon Carbide and Related Materials (ICSCRM), Nuernberg, Germany, Hiroyuki Kageshima, Hiroki Hibino, and Masao Nagase, "Study of epitaxial graphene growth using LEEM and first-principles", Mo-P-1 (invited).
7 Oct. 2009, 2009 International Conference on Solid State Devices and Materials (SSDM), Sendai, Japan, Jin-ichiro Noborisaka, Katsuhiko Nishiguchi, Hiroyuki Kageshima, Yukinori Ono, and Akira Fujiwara, "Tunnel spectroscopy of electron subbands in thin SOI MOSFETs", K-1-3.
10 Sep. 2009, The 20th European Conference on Diamond, Diamond-like Materials, Carbon Nanotubes, and Nitrides (Diamond 2009), Athens, Greece, Michal Kubovic, Makoto Kasu, Toshiharu Yamauchi, and Hiroyuki Kageshima, "Increase of Hole Concentration of Hydrogen-terminated Diamond Surface After Adsorption of Specific Gas Species", O72.
24 Jun. 2009, 2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD), Busan, Korea, Masao Nagase, Hiroki Hibino, Hiroyuki Kageshima, and Hiroshi Yamaguchi, "Metrology of microscopic properties of graphene on SiC", 1B.1 (invited).
13 Jun. 2009, The 2009 IEEE Silicon Nanoelectronics Workshop (SNW-09), Kyoto, Japan, Hiroyuki Kageshima and Akira Fujiwara, "First-principles Study on Channel Thickness Dependence of Inversion Layer Dielectric Constant in Double-Gate Atomically Thin Silicon", 7-1.
2 Mar. 2009, 2009 RCIQE International Seminar on "Advanced Semiconductor Materials and Devices", Sapporo, Japan, Masao Nagase, Hiroki Hibino, Hiroyuki Kageshima, and Hiroshi Yamaguchi, "Novel microscopies for graphene on SiC" (invited).
23 Jan. 2009, International Symposium on Nanoscale Transport and Technology (ISNTT), Atsugi, Japan, Masao Nagase, Hiroki Hibino, Hiroyuki Kageshima, and Hiroshi Yamaguchi, "Local conductance of deformed graphene near atomic steps on SiC".
10 Dec. 2008, The 13th Advanced Heterostructures and Nanostructures Workshop (AHNW) -- Workshop on Innovative Nanoscale Devices and Systems -- Hawaii, USA, Masao Nagase, Hiroki Hibino, Hiroyuki Kageshima, Hiroshi Yamaguchi, "Local conductance measurement of deformed double-layer graphene on atomic step-structures of SiC substrate" (invited).
17 Nov. 2008, The International Symposium on Graphene Devices: Technology, Physics and Modeling (ISGD), Aizu-Wakamatsu, Fukushima, Japan, Hiroki Hibino, Masao Nagase, C. Jackson, Hiroyuki Kageshima, Yoshihiro Kobayashi, and Hiroshi Yamaguchi, "Evaluation of number of graphene layers grown on SiC: SPM and Raman spectroscopy studies", M3-3.
17 Nov. 2008, The International Symposium on Graphene Devices: Technology, Physics and Modeling (ISGD), Aizu-Wakamatsu, Fukushima, Japan, Hiroyuki Kageshima, Hiroki Hibino, Masao Nagase, and Hiroshi Yamaguchi, "Theoretical study on epitaxial graphene formation on SiC(0001) surfaces", M3-4.
18 Nov. 2008, The International Symposium on Graphene Devices: Technology, Physics and Modeling (ISGD), Aizu-Wakamatsu, Fukushima, Japan, Masao Nagase, Hiroki Hibino, Hiroyuki Kageshima, and Hiroshi Yamaguchi, "Local conductance measurement of thermally grown graphene on SiC substrate", T1-2.
10 Nov. 2008, The 5th International Symposium on Surface Science and Nanotechnology (ISSS-5), Tokyo, Japan, Hiroo Omi, Hiroyuki Kageshima, Masashi Uematsu, Tomoaki Kawamura, Yoshihiro Kobayashi, Seiji Fujikawa, Yoshiyuki Tsusaka, Yasushi Kagoshima and Junji Matsui, "Temperature dependent roughening at the growing SiO2/Si(001) interface", 10p-p-101.
10 Nov. 2008, The 5th International Symposium on Surface Science and Nanotechnology (ISSS-5), Tokyo, Japan, Hiroki Hibino, Hiroyuki Kageshima, Masato Kotsugi and Yoshio Watanabe, "Local work function measurements of epitaxial few-layer graphene", 10p-h-6 (invited).
10 Nov. 2008, The 5th International Symposium on Surface Science and Nanotechnology (ISSS-5), Tokyo, Japan, Hiroyuki Kageshima, Hiroki Hibino, Masao Nagase and Hiroshi Yamaguchi, "First-principles Study on Epitaxial Graphene Formation on SiC(0001) Surfaces", 10p-h-8 (invited).
7 Nov. 2008, The 2008 International Workshop on Dielectric Thin Films for Future ULSI Devices (IWDTF-08), Tokyo, Japan, Toru Akiyama, Hiroyuki Kageshima, Masashi Uematsu and Tomonori Ito, "Reaction Mechanisms of H2O Molecules at SiO2/Si Interfaces during Silicon Thermal Oxidation", S7-4.
5 Nov. 2008, The 2008 International Workshop on Dielectric Thin Films for Future ULSI Devices (IWDTF-08), Tokyo, Japan, Hiroyuki Kageshima, Toru Akiyama, Masashi Uematsu and Tomonori Ito, "Theoretical Study on Nitrogen and Nitrogen Oxide Molecules in Silicon Oxide", P1-21.
22 Oct. 2008, IEEE Nanotechnology Materials and Devices 2008 (NMDC 2008), Kyoto, Japan, Hiroyuki Kageshima and Akira Fujiwara, "First-principles Study on Inversion Layer Capacitance of Atomically Thin Si Channel Double Gate Field Effect Transistor", WeA II-5.
21 Oct. 2008, IEEE Nanotechnology Materials and Devices 2008 (NMDC 2008), Kyoto, Japan, Masao Nagase, Hiroki Hibino, Hiroyuki Kageshima and Hiroshi Yamaguchi, "In plane conductance images of few-layer graphene on SiC substrate", TuB II-4.
8 Sep. 2008, The 19th European Conference on Diamond, Diamond-like Materials, Carbon Nanotubes, and Nitrides, Sitges, Spain, Makoto Kasu, M. Kubovic, Yoshiharu Yamauchi, Kenji Ueda, and Hiroyuki Kageshima, "Structural and Electrical Properties of H-terminated Diamond Field-effect Transistor".
8 Sep. 2008, The 19th European Conference on Diamond, Diamond-like Materials, Carbon Nanotubes, and Nitrides, Sitges, Spain, Hiroyuki Kageshima and Makoto Kasu, "First-principles Study on Schottky Barrier Height of H-terminated Diamond (100)".
22 Jul. 2008, The 2008 International Conference on Nanoscience + Technology (ICN+T 2008), Keystone, Colorado, USA, Masao Nagase, Hiroki Hibino, Hiroyuki Kageshima and Hiroshi Yamaguchi, "Local conductance of graphene layer near the buried atomic steps on SiC substrate", NM1-TuM6.
15 Jun. 2008, The 2007 IEEE Silicon Nanoelectronics Workshop (SNW-07), Honolulu, Hawaii, Hiroyuki Kageshima and Akira Fujiwara, "First-principles Study on Inversion Layer Properties of Double-Gate Atomically Thin Silicon Channel".
6 Dec. 2007, 15th International Colloquium on Scanning Probe Microscopy (ICSPM15), Higashi-Izu, Shizuoka, Japan, Masao Nagase, Hiroki Hibino, Hiroyuki Kageshima and Hiroshi Yamaguchi, "Conductance of Nano-graphene Island Measured Using Nanogap Electrodes Integrated on Scanning Probe", S4-54.
6 Dec. 2007, 15th International Colloquium on Scanning Probe Microscopy (ICSPM15), Higashi-Izu, Shizuoka, Japan, Hiroki Hibino, Masao Nagase, Hiroyuki Kageshima, Fumihiko Maeda, Yasuyuki Kobayashi and Hiroshi Yamaguchi, "Number-of-Layers Distribution in Graphene Layers Formed on SiC(0001)", S4-52.
14 Nov. 2007, 9th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-9), Tokyo, Japan, Hiroki Hibino, Hiroyuki Kageshima, F.-Z. Guo, Fumihiko Maeda, Masato Kotsugi, and Yoshio Watanabe, "Two-dimensional emission patterns of secondary electrons from graphene layers formed on SiC(0001)", 14Ca-5.
13 Nov. 2007, 9th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-9), Tokyo, Japan, Hiroyuki Kageshima, and Makoto Kasu, "Theoretical study on hydrogen terminated dependence of Schottky barrier height for Al/diaomnd (100) interfaces", 13Aa-6.
30 Oct. 2007, 6th International Symposium on Atomic Level Characterizations for New Materials and Devices '07 (ALC'07), Kanazawa, Japan, Hiroki Hibino, Hiroyuki Kageshima, Fumihiko Maeda, Masao Nagase, Yoshihiro Kobayashi, and Hiroshi Yamaguchi, "Thickness determination of graphene layers formed on SiC using low-energy electron microscopy", TuA-7.
30 Oct. 2007, The 10th Asian Workshop on First-Principles Electronic Structure Calculations (ASIAN10), Higashi-Hiroshima, Japan, Hiroyuki Kageshima and Akira Fujiwara, "Property of Silicon Quantum Capacitors", P-22.
16 Oct. 2007, The 34th International Symposium on Compound Semiconductors (ISCS2007), Kyoto, Japan, Hiroyuki Kageshima and Makoto Kasu, "First-principles Study on Vacancy-Hydrogen Complexes in Diamond", TuE P17.
16 Oct. 2007, The 34th International Symposium on Compound Semiconductors (ISCS2007), Kyoto, Japan, Makoto Kasu, Kenji Ueda, Hiroyuki Kageshima and Yoshitaka Taniyasu, "Diamond RF FETs and Other Applications in Electronics", TuC III-1 (Invited).
24 Aug. 2007, 7th Topical Workshop on Heterostructure Microelectronics (TWHM2007), Kisarazu, Japan, Makoto Kasu, Kenji Ueda, Hiroyuki Kageshima, Yoshiharu Yamauchi, and Toshiki Makimoto, "RF Equivalent-Circuit Analysis of Submicron-Gate Diamond FETs", FrB-8.
4 Jul. 2007, 17th International Vacuum Congress (IVC17)/13th International conference on Surface Science (ICSS13)/International Conference on Nano-Science and Technology (ICN+T2007), Stockholm, Sweden, Hiroyuki Kageshima and Akira Fujiwara, "First-principles study on capacitor made of silicon (111) nano-slabs", SS02-266.
3 Jul. 2007, 17th International Vacuum Congress (IVC17)/13th International conference on Surface Science (ICSS13)/International Conference on Nano-Science and Technology (ICN+T2007), Stockholm, Sweden, Toru Akiyama, Hiroyuki Kageshima, Masashi Uematsu and Tomonori Ito, "Microscopic processes of oxidation reaction at SiO2/Si(100) interfaces with oxidation-induced strain", TSFE-Or3.
2 Jul. 2007, 17th International Vacuum Congress (IVC17)/13th International conference on Surface Science (ICSS13)/International Conference on Nano-Science and Technology (ICN+T2007), Stockholm, Sweden, Shin Yabuuchi, Hiroyuki Kageshima, Yukinori Ono, Masao Nagase, Akira Fujiwara and Eiji Ohta, "Theoretical study on magnetic properties of manganese nanosilicide in silicon", NSP1-118.
2 Jul. 2007, 17th International Vacuum Congress (IVC17)/13th International conference on Surface Science (ICSS13)/International Conference on Nano-Science and Technology (ICN+T2007), Stockholm, Sweden, Masao Nagase, Hiroki Hibino, Hiroyuki Kageshima, and Hiroshi Yamaguchi, "Local conductance measurement of few-layer graphen on SiC substrate using an integrated nanogap probe", NSP1-87.
11 Jun. 2007, The 2007 Silicon Nanoelectronics Workshop (SNW2007), Kyoto, Japan, Shin Yabuuchi, Yukinori Ono, Masao Nagase, Hiroyuki Kageshima, Akira Fujiwara, and Eiji Ohta, "Magnetic properties of manganese nanosilicide in silicon", 7-3.
30 May 2007, The 1st Conference of New Diamond and Nano Carbons (NDNC), Toyonaka, Osaka, Japan, Hiroyuki Kageshima and Makoto Kasu, "Theoretical Study of Al adsorption on clean, H-, and O-terminated diamond (100) surfaces".
9 May 2007, 211th Meeting of The Electrochemical Society, Ninth International Symposium on Silicon Nitride, Silicon Dioxide Insulating Films and Emerging Dielectrics, Chicago, Ilinois, USA, Hiroyuki Kageshima, "Microscopic Mechanism of Silicon Oxidation Process" (Invited).
9 Nov. 2006, 2006 International Workshop on Dielectric Thin Films for Future ULSI Devices --Science and Technology -- (IWDTF2006), Kawasaki, Japan, Toru Akiyama, Hiroyuki Kageshima, Masashi Uematsu, and Tomonori Ito, "Suppression of oxidation reaction by oxidation-induced strain at ultrathin Si-oxide/Si interface", P2-3.
9 Nov. 2006, 2006 International Workshop on Dielectric Thin Films for Future ULSI Devices -- Science and Technology -- (IWDTF2006), Kawasaki, Japan, Hiroyuki Kageshima and Masashi Uematsu, "Theoretical study on emission of Si-related species at Si-oxide/Si interfaces", S3-4.
14 Sep. 2006, International Conference on Solid State Devices and Materials (2006 SSDM), Yokohama, Japan, Hiroyuki Kageshima, Masashi Uematsu, Toru Akiyama and Tomonori Ito, "Microscopic Mechanism of Oxygen Transport during Thermal Silicon Oxidation", P-1-23.
27 Jul. 2006, 28th International Conference of Physics of Semiconductors (28th ICPS), Wien, Austria, Hiroyuki Kageshima and Masashi Uematsu, "Strain dependence of stabilities of Si-related defects in Si-oxide", ThM1e.3.
25 Jul. 2006, 28th International Conference of Physics of Semiconductors (28th ICPS), Wien, Austria, Hiroyuki Kageshima, Akihito Taguchi and Kazumi Wada, "Theoretical comparison of nitrogen-doping effects on silicon crystal growth with oxygen-doping effects", TuA3g.2.
18 Apr. 2006, Computational Science Workshop 2006 (CSW2006), Tsukuba, Ibaraki, Japan, Kazuyuki Uchida, Hiroyuki Kageshima, Hiroshi Inokawa, Satoru Ohno, Shin Yabuuchi, Hideyuki Maki and Tetsuya Sato, "Ferromagnetic Phase Transition Induced by Field-Effect Doping -- A First-Principles Prediction --".
28 Feb. 2006, International Symposium on Mesoscopic Superconductivity and Spintronics 2006 (MS+S2006), Atsugi, Kanagawa, Japan, Kazuyuki Uchida, Hiroyuki Kageshima, Hiroshi Inokawa, Satoru Ohno, Shin Yabuuchi, Hideyuki Maki and Tetsuya Sato, "Modulated Ferromagnetism of the Pd Thin Film by Electric Field -- A First-Principles Prediction --, PTu-33.
28 Feb. 2006, International Symposium on Mesoscopic Superconductivity and Spintronics 2006 (MS+S2006), Atsugi, Kanagawa, Japan, Shin Yabuuchi, Eiji Ohta and Hiroyuki Kageshima, "Strain effects on Mn in Si: First-principles study", PMo-30.
17 Nov. 2005, International Symposium on Surface Science and Nanotechnology (ISSS-4), Omiya, Saitama, Japan, Hiroyuki Kageshima, Masashi Uematsu, Kazuto Akagi, Shinji Tsuneyuki and Kenji Shiraishi, "Theoretical Study on Atomic Structures of Thermally Grown Silicon Oxide/Silicon Interfaces", Th-A8.
14 Nov. 2005, International Symposium on Surface Science and Nanotechnology (ISSS-4), Omiya, Saitama, Japan, Kazuyuki Uchida, Hiroyuki Kageshima, and Hiroshi Inokawa, "First-principles study of field-effect doping in nano-scale systems by the enforced Fermi-energy difference method", P1-12.
20 Sep. 2005, Psi-k 2005 Conference, Schwoebisch Gmuend, Germany, Kazuyuki Uchida, Hiroyuki Kageshima, and Hiroshi Inokawa, "First-principles study of field-effect doping in SrTiO3 by the enforced Fermi-energy difference method", N10.
25 Aug. 2005, 17th International Conference on Ion-Surface Interactions, Zvenigorod, Russia, Shigetaka Hosoi, Kaoru Nakajima, Motofumi Suzuki, Kenji Kimura, Yasuo Shimizu, Shigeto Fukatsu, Kohei M. Itoh, Masashi Uematsu, Hiroyuki Kageshima, and Kenji Shiraishi, "Oxidation of Si(001) studied by High-Resolution RBS in Combination with Stable Isotope Tracing" (invited).
28 Jul. 2005, 23d International Conference on Defects in Semiconductors (ICDS-23), Awaji Island, Hyogo, Japan, Shin Yabuuchi, Eiji Ohta, Hiroyuki Kageshima, and Akihito Taguchi, "First-principles study of strain effects on Mn in Si", ThP.64.
28 Jul. 2005, 23d International Conference on Defects in Semiconductors (ICDS-23), Awaji Island, Hyogo, Japan, Hiroyuki Kageshima, Masashi Uematsu, Kazuto Akagi, Shinji Tsuneyuki, Toru Akiyama, and Kenji Shiraishi, "Mechanism of oxide deformation during silicon thermal oxidation", ThP.7.
27 Jul. 2005, 23d International Conference on Defects in Semiconductors (ICDS-23), Awaji Island, Hyogo, Japan, Akihito Taguchi, Hiroyuki Kageshima, and Kazumi Wada, "Theoretical study for vacancy supersaturation during silicon crystal growth and nitrogen doping effects", TuP.20.
26 Jun. 2005, 17th International Conference on Ion Beam Analysis, Sevilla, Spain, Shigetaka Hosoi, Kaoru Nakajima, Motofumi Suzuki, Kenji Kimura, Yasuo Shimizu, Shigeto Fukatsu, Kohei M. Itoh, Masashi Uematsu, Hiroyuki Kageshima, and Kenji Shiraishi, "Observation of Si emission during thermal oxidation of Si(001) with high-resolution RBS".
23 May 2005, Fourth International Conference on Silicon Epitaxy and Heterostructures (ICSI-4), Awaji Island, Hyogo, Japan, Masashi Uematsu, Hiroyuki Kageshima, Shigeto Fukatsu, Kohei Itoh, and Kenji Shiraishi, 23B-2, "Enhanced Si and B Diffusion in Semiconductor-Grade SiO2 and the Effect of Strain on Diffusion" (invited).
23 May 2005, Fourth International Conference on Silicon Epitaxy and Heterostructures (ICSI-4), Awaji Island, Hyogo, Japan, Toru Akiyama, Keiji Kawamoto, Hiroyuki Kageshima, Masashi Uematsu, Koji Nakamura and Tomonori Ito, 23P1-36, "A First-principles Study of O2 Diffusion in Compressively Strained High-Density Silicon Oxides".
25 Jul. 2005, 23d International Conference on Defects in Semiconductors (ICDS-23), Awaji Island, Hyogo, Japan, Akihito Taguchi, Hiroyuki Kageshima, and Kazumi Wada, "Theoretical study for vacancy supersaturation during silicon crystal growth and nitrogen doping effects", TuP.20.
28 Jul. 2005, 23d International Conference on Defects in Semiconductors (ICDS-23), Awaji Island, Hyogo, Japan, Shin Yabuuchi, Eiji Ohta, Hiroyuki Kageshima, and Akihito Taguchi, "First-principles study of strain effects on Mn in Si", ThP.64.
28 Jul. 2005, 23d International Conference on Defects in Semiconductors (ICDS-23), Awaji Island, Hyogo, Japan, Hiroyuki Kageshima, Masashi Uematsu, Kazuto Akagi, Shinji Tsuneyuki, Toru Akiyama, and Kenji Shiraishi, "Mechanism of oxide deformation during silicon thermal oxidation", ThP.7.
23 May 2005, Fourth International Conference on Silicon Epitaxy and Heterostructures (ICSI-4), Awaji Island, Hyogo, Japan, Masashi Uematsu, Hiroyuki Kageshima, Shigeto Fukatsu, Kohei Itoh, and Kenji Shiraishi, 23B-2, "Enhanced Si and B Diffusion in Semiconductor-Grade SiO2 and the Effect of Strain on Diffusion" (invited).
3 Mar. 2005, Third Internatioinal Conference on Molecular Electronics and Bioelectronics (M&BE3), Tokyo, Japan, Kazuyuki Uchida, Hiroyuki Kageshima and Hiroshi Inokawa, 3P-C29, "First-principles Study of Electrode Effects on Single-Electron Molecular Devices".
9 Dec. 2004, The 12th Internatioinal Colloquium on Scannning Probe Microscopy (ICSPM12), Higashi-Izu, Japan, Kazuyuki Uchida, Hiroyuki Kageshima and Hiroshi Inokawa, 4.15, "Charge Injection Effects in a Single Phenyldithiol Molecule".
1 Dec. 2004, The 2004 Fall Meeting of Materials Research Society (MRS), Boston, USA, Kazuyuki Uchida, Hiroyuki Kageshima and Hiroshi Inokawa, II7.12, "Ab-initio Study of Redox Effects on Atomic and Electronic Structure of 4,4'-Terphenyldithiol".
2 Sep.2004, International Conference on Simulation of Semiconductor Processes and Devices (SISPAD2004), Munich, Germany, Masashi Uematsu, Hiroyuki Kageshima, and Kenji Shiraishi, 'Effect of Stress on Pattern-Dependent Oxidation of Silicon Nanostructures'.
27 Jul. 2004, 27th International Conference on the Physics of Semiconductors (ICPS27), Flagstaff, Arizona, USA, J5.093, Hiroyuki Kageshima, Akihito Taguchi, and Kazumi Wada, "Defect kinetics of O-V-N complexes in Si ingot growth based on first-principles calculations and thermodynamics".
27 Jul. 2004, 27th International Conference on the Physics of Semiconductors (ICPS27), Flagstaff, Arizona, USA, Hiroyuki Kageshima, Masashi Uematsu, Kazuto Akagi, Shinji Tsuneyuki, Toru Akiyama, and Kenji Shiraishi, H5.108, "First-principles study of excess Si-atom stability around Si-oxide/Si interfaces".
27 Jul. 2004, 27th International Conference on the Physics of Semiconductors (ICPS27), Flagstaff, Arizona, USA, H5.113, Toru Akiyama and Hiroyuki Kageshima, "Microscopic Theory of Oxygen Reaction Mechanisms at SiO2/Si(100) Interface".
28 May 2004, 2004 International Workshop on Dielectric Thin Films for Future ULSI Devices: Science and Technology (IWDTF2004), Tokyo, Japan, Hiroyuki Kageshima, Masashi Uematsu, Kazuto Akagi, Shinji Tsuneyuki, Toru Akiyama, and Kenji Shiraishi, "Theoretical Study of Excess Si Emitted from Si-Oxide/Si Interfaces".
28 May 2004, 2004 International Workshop on Dielectric Thin Films for Future ULSI Devices: Science and Technology (IWDTF2004), Tokyo, Japan, Toru Akiyama, Hiroyuki Kageshima, and Tomonori Ito, "First-principles Analyses of O2 Molecules around Ultrathin SiO2/Si(100) Interface".
27 May 2004, 2004 International Workshop on Dielectric Thin Films for Future ULSI Devices: Science and Technology (IWDTF2004), Tokyo, Japan, Shigeto Fukatsu, Kohei M. Itoh, Masashi Uematsu, Hiroyuki Kageshima, Yasuo Takahashi, and Kenji Shiraishi, "The effect of the Si/SiO2 interface on boron diffusion in SiO2".
27 May 2004, A2004 International Workshop on Dielectric Thin Films for Future ULSI Devices: Science and Technology (IWDTF2004), Tokyo, Japan, Masashi Uematsu, Hiroyuki Kageshima, Yasuo Takahashi, Shigeto Fukatsu, Kohei M. Itoh, and Kenji Shiraishi, "Enhancement of Si Self-Diffusion by the Existence of B in SiO2".
1 Dec. 2003, The 2003 Fall Meeting of the Materials Research Society, Boston, MA, USA, Hiroo Omi, Masashi Uematsu, Hiroyuki Kageshima, and Toshio Ogino, E3.4, "Kinetics of thermal oxidation at the Si(001)-SiO2 interface".
1 Dec. 2003, The 2003 Fall Meeting of the Materials Research Society, Boston, MA, USA, Toru Akiyama and Hiroyuki Kageshima, E3.7, "First-principles investigation for reaction of oxygen at ultrathin Si-oxide/Si interface".
1 Dec. 2003, The 2003 Fall Meeting of the Materials Research Society, Boston, MA, USA, Hiroyuki Kageshima, Akihito Taguchi, and Kazumi Wada, KK2.8, "First-principles investigations of N-V-O complexes in Si".
1 Dec. 2003, The 2003 Fall Meeting of the Materials Research Society, Boston, MA, USA, Hiroyuki Kageshima, Toru Akiyama, Kazuto Akagi, Masashi Uematsu, Kenji Shiraishi, and Shinji Tsuneyuki, E3.10, "First-principles study of behaviour of excess Si atoms around ultra-thin Si-oxide/Si interfaces".
24 Oct. 2002, Fourth International Symposium on Control of Semiconductor Interfaces (ISCSI-4), Karuizawa, Japan, Tomonori Ito, Kohji Nakamura, Yoshihiro Kangawa, Kenji Shiraishi, Akihito Taguchi and Hiroyuki Kageshima, "Systematic theoretical investigations of miscibility in Si1-x-yGexCy thin films".
20 Nov. 2003, 7th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-7), Nara, Japan, Hiroyuki Kageshima, Toru Akiyama, Kazuto Akagi, Masashi Uematsu, Kenji Shiraishi, and Shinji Tsuneyuki, 20D68, "Stability of excess Si defects near SiO2/Si(100) interfaces".
17 Sep. 2003, 2003 International Conference on Solid State Devices and Materials (SSDM2003), Tokyo, Japan, Toru Akiyama and Hiroyuki Kageshima, P3-21L, "Origin of Interfacial Reaction Constant for Si Thermal Oxidation".
29 Jul. 2003, 22th International Conference on Defects in Semiconductors (ICDS-22), Aahus, Denmark, Hiroyuki Kageshima, Akihito Taguchi and Kazumi Wada, PA106, "Formation of stable N-V-O complex in Si".
1 May 2003, 203th Meeting of the Electrochemical Society (203th ECS), Paris, France, Masashi Uematsu, Hiroyuki Kageshima and Kenji Shiraishi, 839, "Oxidation Simulation of Silicon Nanostructure on Silicon-on-Insulator Substrates".
24 Oct. 2002, Fourth International Symposium on Control of Semiconductor Interfaces (ISCSI-4), Karuizawa, Japan, Toru Akiyama and Hiroyuki Kageshima, "Microscopic mechanism of interfacial reaction during Si oxidation".
21 Oct. 2002, 5th Asian Workshop on the first-principles electronic structure calculations, Seoul, Korea, Hiroyuki Kageshima, Kenji Shiraishi, Masashi Uematsu, and Toru Akiyama, "Si emission mechanism for the Si thermal oxidation" (invited).
6-15 Aug. 2002, XIX Congress on the International Union of Crystallography (XIX IUC), Geneva, Switzerland, Tomonori Ito, Kenji Shiraishi, Akihito Taguchi, Hiroyuki Kageshima, Yoshihiro Kangawa and Kohji Nakamura, "Teaching the mechanism of the epitaxial growth using the quantum mechanical approach" (invited).
29 Jul. 2002, the 26th International Conference on the Physics of Semiconductor (ICPS26), Edinburgh, UK, Toru Akiyama and Hiroyuki Kageshima, H16, "First-principles study of reaction of atomic oxygen at SiO2/Si(100) interfaces".
29 Jul. 2002, the 26th International Conference on the Physics of Semiconductor (ICPS26), Edinburgh, UK, Hiroyuki Kageshima, Akihito Taguchi, and Kazumi Wada, H57, "Theoretical investigation of nitrogen doping effect on aggregation processes of Si interstitials".
16 May 2002, 9th International Symposium on Silicon Material Science and Technology, 100th Meeting of the Electro-Chemical Society, Philadelphia, USA, Masashi Uematsu, Hiroyuki Kageshima, and Kenji Shiraishi, N1.597, "Unified Theory of Thermal Silicon Oxide Growth" (invited).
2 Apr. 2002, Symposium F: Defect and Impurity Engineered Semiconductors and Devices III, Materials Research Society 2002 Spring Meeting (MRS2002 Spring), San Francisco, USA, Hiroyuki Kageshima, Akihito Taguchi, and Kazumi Wada, F, "Nitrogen-doping effect in vacancy aggregation processes in Si" (invited).
27 Sep. 2001, 2001 International Conference on Solid State Devices and Materials (SSDM2001), Tokyo, Japan, Masashi Uematsu, Hiroyuki Kageshima, and Kenji Shiraishi, B-6-1, "Interfacial Silicon Emission in Dry Oxidation -- the Effect of H and Cl".
24 Aug. 2001, the Second Korea-Japan Workshop on Frontier Nanostructures on Surfaces, Cheju, Korea, Hiroyuki Kageshima, Masashi Uematsu, and Kenji Shiraishi, "Theory of Si oxide growth rate including interfacial Si emission effects" (invited).
27-30 Jun. 2001, Biannual Conference on Insulating Films on Semiconductors 2001 (INFOS 2001), Udine, Italy, Hiroyuki Kageshima, Masashi Uematsu, and Kenji Shiraishi, "Theory of Si thermal oxide growth rate taking account of interfacial Si emission effect" (invited)
30 May, 2001, Electrochemical Society International Semiconductor Technology Conference (ECS-ISTC 2001), Shanghai, Chaina, Hiroyuki Kageshima, Kenji Shiraishi, and Masashi Uematsu, "Theory of Si oxide growth rate taking account of interfacial Si emission" (invited)
18 Oct. 2000, The International Symposium on Surface and Interface -- Properties of Different Symmetry Crossing -- 2000 (ISSI-PDSC 2000), Nagoya, Japan, Hiroyuki Kageshima, Kenji Shiraishi, and Masashi Uematsu, P-66, "New picture for the mechanism of thermal Si oxide growth process".
19 Sep. 2000, 25th International Conference on the Physics of Semiconductors (25th ICPS), Osaka, Japan, Kenji Shiraishi, Hiroyuki Kageshima, and Masashi Uematsu, F41, "Microscopic mechanisms of Si oxidation" (invited)
19 Sep. 2000, 25th International Conference on the Physics of Semiconductors (25th ICPS), Osaka, Japan, Hiroyuki Kageshima, Akihito Taguchi, and Kazumi Wada, E35, "Theoretical investigation of suppression of vacancy aggregation due to nitrogen in Si".
29 Nov. 1999, The 1999 Fall Meeting of the Materials Research Society, Boston, USA: H. Kageshima and K. Shiraishi, T1.3, "Universal Theory of Oxide Growth Rate on Silicon".
26 Oct. 1999, Third International Symposium on Control of Semiconductor Interfaces (ISCSI-3), Karuizawa, Japan: H. Kageshima, K. Shiraishi, H. Ikeda, S. Zaima, and Y. Yasuda, A1-2, "Selectivity rule for O adsorption position on dihydride Si(100) surfaces".
22 Oct. 1999, First International Workshop on Dielectric Thin Films for Future ULSI Devices: Science and Technology (IWDTF-1), Tokyo, Japan: H. Kageshima and K. Shiraishi, 22p-3-2, "Theory of Si Oxide growth Rate Taking Account of Interfacial Si Emission: Relation with Nitridation, Oxynitridation, and Dielectric Reliability".
23 Sep. 1999, 1999 International Conference on Solid State Devices and Materials (SSDM), Tokyo, Japan: H. Kageshima and K. Shiraishi, A9-3, "Universal theory of Si oxiation rate taking account of interfacial Si emission".
22 Sep. 1999, 1999 International Conference on Solid State Devices and Materials (SSDM), Tokyo, Japan: S. Horiguchi, M. Nagase, K. Shiraishi, H. Kageshima, Y. Takahashi, and K. Murase, D4-3, "Effect of Oxidation-Induced Strain on Potential Profile in Si SETs Using Pattern-Dependent-Oxidation (PADOX)".
14 Sep. 1999, International Joint Conference on Silicon Epitaxy and Heterostructures (IJC-Si), Miyagi, Japan: K. Shiraishi, K. Sumitomo, Y. Yoshimoto, H. Kageshima, Y. Kobayashi, T. Ito, T. Ogino, and M. Tsukada, D-3, "Theoretical and experimental studies on the microscopic origin of the Ge segregation on Si(001) surfaces: crucial effect of configurational entropy".
12 Jul. 1999, The 9th International Conference on Modulated Semiconductor Structures (MSS-9), Fukuoka, Japan: K. Shiraishi, M. Nagase, S. Horiguchi, H. Kageshima, and M. Uematsu, D19, "Designing of silicon effective quantum dots by using the oxidation-induced strain: A theoretical approach".
12 Jun. 1999, 1999 Silicon Nanoelectronice Workshop, S. Horiguchi, M. Nagase, K. Shiraishi, H. Kageshima, Y. Takahashi, and K. Murase, session 2, 2, "Mechanism of potential profile formation in Si SETs using pattern dependent oxidation (PADOX)".
2 Dec. 1998, The 1998 Fall Meeting of the Materials Research Society (MRS), Boston, USA, K. Shiraishi, M. Nagase, S. Horiguchi, and H. Kageshima, F8.34, "Theoretical investigation of effective quantum dots induced by strain in semiconductor wires".
30 Nov. 1998, The 1998 Fall Meeting of the Materials Research Society (MRS), Boston, USA, H. Kageshima and K. Shiraishi, C3.10, "First-principles study of physical properties of silicon emission during silicon oxidation".
20 Nov. 1998, International symposium on Surface and Interface: Properties of Different Symmetry Crossing, Tokyo, Japan: H. Kageshima and K. Shiraishi, FA4, "Relation between oxide growth direction and stress on silicon surfaces and at silicon-oxide/silicon interfaces".
10 Sep. 1998, 1998 International Conference on Solid State Devices and Materials, Hiroshima, Japan: H. Kageshima and K. Shiraishi, D-9-1, "First principles study of the oxide growth process on silicon surfaces and at silicon-oxide/silicon interfaces".
3. Sep. 1998, 14th International Vacuum Congress/10th International Conference on Solid Surfaces/5th International Conference on Nanometer-scale Science and Technology/10th International Conference on Quantitative Surface Analysis, Birmingham, UK: K. Shiraishi, T. Ito, Y. Y. Suzuki, H. Kageshima, K. Kanisawa, and H. Yamaguchi, SS1.ThM.1, "Microscopic Investigation of the Surface Phase Transition on GaAs(001) Surfaces".
13 Aug. 1998, 8th International Conference on High Pressure Semiconductor Physics, Thessaloniki, Greece: E. Yamaguchi, K. Shiraishi and H. Kageshima, 7-5, "Level-resonance transition of deep states produced by nitrogen vacancies in nitride semiconductors".
2 Dec. 1997, The 1997 Fall Meeting of the Materials Research Society, Boston, USA: H. Kageshima and K. Shiraishi, S5.10, "First principles study of interfacial reaction atomic process at silicon oxidation".
1 Dec. 1997, The 1997 Fall Meeting of the Materials Research Society, Boston, USA: H. Kageshima and K. Shiraishi, H4.3, "First principles study of photoluminescence from silicon/silicon-oxide interfaces".
29 Oct. 1997, The Fourth International Symposium on Atomically Controlled Surfaces and Interfaces, Tokyo, Japan: H. Kageshima and K. Shiraishi, N1, "Si-kicking-out mechanism of initial oxide formation on hydrogen-terminated Si(100) surfaces".
28 Oct. 1997, The Fourth International Symposium on Atomically Controlled Surfaces and Interfaces, Tokyo, Japan: K. Shiraishi, Y. Y. Suzuki, H. Kageshima, and T. Ito, J8, "Theoretical investigation of inter-surface diffusion on non-planar GaAs surfaces".
21 Jul. 1997, The Nineteenth International Conference on Defects in Semiconductors, Aveiro, Portugal: A. Taguchi and H. Kageshima, "Atomic configuration of oxygen negative-U center in GaAs".
30 Oct. 1996, Second International Symposium on Control of Semiconductor Interfaces, Karuizawa, Japan: H. Kageshima and K. Shiraishi, P2-11, "Relation between band offsets and atomic structures at silicon-silicon dioxide interfaces".
23 Jul. 1996, 23rd International Conference on the Physics of Semiconductors, Berlin, Germany: H. Kageshima, K. Shiraishi, and K. Takeda, TuP-193, "Electronic structures of penta-heptagonal boron-carbon networks".
23 Jul. 1996, 23rd International Conference on the Physics of Semiconductors, Berlin, Germany: H. Kageshima and K. Shiraishi, TuP-18, "Formalism for calculating momentum matrix elements with ultra-soft pseudopotentials".
22 Jul. 1996, 23rd International Conference on the Physics of Semiconductors, Berlin, Germany: H. Kageshima and K. Shiraishi, MoP-70, "Double bond formation mechanism for passivating Si/SiO2 interface states".
28 Sep. 1995, 13th International Vacuum Congress/9th International Conference on Solid Surfaces, Yokohama, Japan: H. Kageshima, "Effect of oxygen termination on electronic states of silicon quantum slabs".
10 Nov. 1993, First International Symposium on Control of Semiconductor Interfaces, Karuizawa, Japan: H. Kageshima and M. Tabe, "First-principle calculation of core level energy shifts on the initial oxidation stage of Si(111) surface".

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