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Biography
Yasuyuki Kobayashi was born in Tochigi on August 9, 1962. He received the B.S. degree in electronics engineering from the University of Utsunomiya, M.S. degree in electronics engineering from the University of Shizuoka, and Ph.D. degree in Material engineering from the Tokyo University of Agriculture and Technology in 1986, 1988, and 1996, respectively. He joined NTT Communication Exchange System Laboratories in 1988 and belonged to NTT Basic Research Laboratories in 1991. In 2000, He went to University of Stuttgart, as a visiting researcher. I spent a year on working with Professor M. Pilkun, Dr. F. Scholz. I investigated self-assembled quantum island of GaInN/GaN on Sic by metalorganic vapor phase epitaxy. After returning to NTT Basic Research Laboratories, I have been engaged in research on MOVPE growth of group-III nitride systems as a senior research scientist, supervisor.
Research Interests
Since 1991 he has engaged in the study of in-situ control of strained InAs/InP heterostructure growth, the growth of atomic-layer structure, and in-situ optical monitoring of the surface during MOVPE growth using surface-photo-absorption (SPA) method. His current interest is high quality hexagonal boron ntirides (h-BN) heteroepitaxial growth. He is a member of the Japan Society of Applied Physics.
1. Y. Kobayashi, H. Hibino, T. Nakamura, T. Akasaka, T. Makimoto and N. Matsumoto, gBoron Nitride Thin Films on Graphitized 6H-SiC Substrates Grown by Metalorganic Vapor Phase Epitaxyh, Jpn. J. Appl. Phys. 46 (2007) 2554.
2. Y. Kobayashi, T. Nakamura, T. Akasaka, T. Makimoto and N. Matsumoto,gUltraviolet luminescence from hexagonal boron nitride heteroepitaxial
layers on Ni (111) grown by flow-rate modulation epitaxyh, phys. stat. sol. (b) 244 (2007) 1789.
3. Y. Kobayashi, T. Nakamura, T. Akasaka, T. Makimoto and N. Matsumoto,
gHexagonal boron nitride grown on Ni (111) substrate by flow-rate modulation
epitaxyh, J. Crystal Growth 298 (2007) 325.
4. Y. Kobayashi and T. Makimoto, gGrowth of Boron Nitride on 6H-SiC Substrate
by Flow-rate Modulation Epitaxyh, Jpn. J. Appl. Phys. Vol. 45 (2006) 3519.
5. Y. Kobayashi, Y. Yamauchi and N. Kobayashi, gStructural and Optical
Properties of AlGaInN/GaN Grown by MOVPEh, Jpn. J. Appl. Phys. 42 (2003)
2300.
6. Y. Kobayashi, V. Perez-Solorzano, J. Off, B. Kuhn, H. Grabeldinger,
H. Schweizer and F. Scholz, gInvestigations of growth of self-assembled
GaInN-GaN islands on SiC substrate by metalorganic vapor phase epitaxyh,
J. Crystal Growth 243 (2002) 103.
7. Y. Kobayashi, T. Akasaka and N. Kobayashi, "Thermal Stability of
Low-Temperature GaN and AlN Buffer Layers during Metalorganic Vapor Phase
Epitaxy Monitored by In Situ Shallow-Angle Reflectance Using Ultraviolet
Light", Jpn. J. Appl. Phys. 37 (1998) L1208.
8. Y. Kobayashi, T. Akasaka and N. Kobayashi, "In-situ monitoring
of GaN MOVPE by shallow-angle reflectance using ultraviolet light",
J. Crystal Growth 195 (1998) 187.
9. Y. Kobayashi and N. Kobayashi, "Influence of N2 carrier gas on
surface stoichiometry in GaN MOVPE studied by surface photo-absorption",
J. Crystal Growth 189/190 (1998) 301.
10. Y. Kobayashi, F. Scholz and N. Kobayashi, "Surface Morphology
and Carbon Incorporation for Hexagonal GaN/(111)B GaAs Metalorganic Vapor
Phase Epitaxy Using Dimethylhydrazine and Trimethylgallium",
Jpn. J. Appl. Phys. 36 (1997) 2592.
11. Y. Kobayashi and N. Kobayashi, "Chemical Bonding Structure of
InP Surface in MOVPE Studied by Surface Photo-absorption", J. Electron.
Material. 25 (1996) 691.
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