ORCID iD : https://orcid.org/0000-0002-3606-0596 ResearcherID: C-2432-2011
Control of n-type electrical conductivity
for cubic boron nitride (c-BN) epitaxial layers by Si doping Published
Online: 21 April 2020, Accepted: March 2020 Appl.
Phys. Lett. 116, 162104 (2020); DOI: 10.1063/1.5143791 Ohmic contact to AlN:Si
using graded AlGaN contact layer Published
Online: 06 November 2019, Accepted: October 2020 Appl.
Phys. Lett. 115, 192104 (2019); DOI: 10.1063/1.5124936 Plasmon Control Driven by Spatial Carrier
Density Modulation in Graphene Publication
Date: 19 March 2019 ACS
Photonics 6, 947 (2019); DOI: 10.1021/acsphotonics.8b01623 Structural analysis of cubic boron nitride
(111) films heteroepitaxially grown on diamond
(111) substrates Published
Date: 20 March 2019, Accepted: February 2019 J. Appl.
Phys. 125, 115303 (2019); DOI: 10.1063/1.5086966 Wurtzite GaP nanowire grown by using tertiarybutylchloride and used to fabricate solar cell Published
Online: 04 December 2018, Accepted: 16 November 2018 Jpn. J. Appl. Phys. 58,
015004 (2018); DOI:
10.7567/1347-4065/aaf172 Layered boron nitride as a release layer for
mechanical transfer of GaN-based devices Publishe: 11 April 2012 Nature 484, 223 (2012); DOI: 10.1038/nature10970 Minority carrier diffusion length in GaN: Dislocation density and doping concentration
dependence Published
Online: 27 January 2005, Accepted: December 2004 Appl.
Phys. Lett. 86, 052105 (2005); DOI: 10.1063/1.1861116 Mg-acceptor activation mechanism and
transport characteristics in p-type InGaN grown by metalorganic vapor phase epitaxy Published
Online: 05 March 2003, Accepted: December 2002 Appl.
Phys. Lett. 116, 162104 (2020); DOI: 10.1063/1.1545155
@|Visiting Researcher at Paul-Drude-Institut fϋr Festkӧrperelektronik,
Germany from Aug. 2007 to Aug. 2008. @|Distinguished Researcher from 2015 to 2019. Kazuhide Kumakura, Ph. D. Thin-Film Materials Research
Group Executive Research Scientist Research Planning Section @NTT Basic Research Laboratories,@ @3-1, Morinosato Wakamiya,
Atsugi-shi, Thin-Film
Materials Research Group / NTT
Basic Research Laboratories ήΏ€O[v / NTT ¨«Θwξb€ |