Last modified: April 19, 2006. 　−Bachelor degree in 1993 from the division of Electrical Engineering, Hokkaido University. 　−Master degree in 1995 from the division of Electronic and Information Engineering, Hokkaido University. 　−Degree of Doctor of Philosophy (Engineering) in 1998 from Hokkaido University. 　　　(Doctor thesis : Fabrication of GaAs Quantum Dots by Selective Area Metalorganic Vapor Phase Epitaxy 　　　　　　　　　　　　　　and Their Application to Quantum Effect Devices 　−Joined NTT in 1998.
Group III -nitride semiconductors 　　･ p-doping (bulk & superlattices) 　　･ ohmic contact to p-type materials 　　･ electronic device application 　　･ epitaxial growth of low dislocation density GaN 　　･ material physics	− p-AlGaN/GaN superlattices & heterostructures 　− p-InGaN, p-InGaN/GaN superlattices & heterostructures 　− ohmic contact to p-GaN 　− nitride-based bipolar junction transistors 　− minority carrier diffusion length in GaN 　− UV emitter
Poster 　　− Transistors Operating in Severe Environment - Doping Technique - (2000) 　　− Low resistance p-type ohmic contact to p-GaN (2001) 　　− Low resistance nonalloyed ohmic contact to p-type nitride-based semiconductor (2002) 　　− Nitride-based Heterojunction Bipolar Transistors (HBTs) (2003) 　　− High-Power Nitride-based Heterojunction Bipolar Transistors (2005)
Kazuhide Kumakura, Ph. D. 　Wide-Bandgap Semiconductor Research Group　 　Materials Science Laboratory,　 　NTT Basic Research Laboratories,　 　 　3-1, Morinosato Wakamiya, Atsugi-shi, 　Kanagawa 243-0198, 　Japan