Last modified: Nov 16, 2020.

ORCID iD : https://orcid.org/0000-0002-3606-0596

ResearcherID: C-2432-2011

Control of n-type electrical conductivity for cubic boron nitride (c-BN) epitaxial layers by Si doping

Published Online: 21 April 2020, Accepted: March 2020

Appl. Phys. Lett. 116, 162104 (2020); DOI: 10.1063/1.5143791

Ohmic contact to AlN:Si using graded AlGaN contact layer

Published Online: 06 November 2019, Accepted: October 2020

Appl. Phys. Lett. 115, 192104 (2019); DOI: 10.1063/1.5124936

Plasmon Control Driven by Spatial Carrier Density Modulation in Graphene

Publication Date: 19 March 2019

ACS Photonics 6, 947 (2019); DOI: 10.1021/acsphotonics.8b01623

Structural analysis of cubic boron nitride (111) films heteroepitaxially grown on diamond (111) substrates

Published Date: 20 March 2019, Accepted: February 2019

J. Appl. Phys. 125, 115303 (2019); DOI: 10.1063/1.5086966

Wurtzite GaP nanowire grown by using tertiarybutylchloride and used to fabricate solar cell

Published Online: 04 December 2018, Accepted: 16 November 2018

Jpn. J. Appl. Phys. 58, 015004 (2018); DOI: 10.7567/1347-4065/aaf172

Layered boron nitride as a release layer for mechanical transfer of GaN-based devices

Publishe: 11 April 2012

Nature 484, 223 (2012); DOI: 10.1038/nature10970

Minority carrier diffusion length in GaN: Dislocation density and doping concentration dependence

Published Online: 27 January 2005, Accepted: December 2004

Appl. Phys. Lett. 86, 052105 (2005); DOI: 10.1063/1.1861116

Mg-acceptor activation mechanism and transport characteristics in p-type InGaN

grown by metalorganic vapor phase epitaxy

Published Online: 05 March 2003, Accepted: December 2002

Appl. Phys. Lett. 116, 162104 (2020); DOI: 10.1063/1.1545155

　−Bachelor degree in 1993 from the division of Electrical Engineering, Hokkaido University.
　−Master degree in 1995 from the division of Electronic and Information Engineering, Hokkaido University.
　−Degree of Doctor of Philosophy (Engineering) in 1998 from Hokkaido University.
　　　(Doctor thesis : Fabrication of GaAs Quantum Dots by Selective Area Metalorganic Vapor Phase Epitaxy
　　　　　　　　　　　　　　and Their Application to Quantum Effect Devices
　−Joined NTT in 1998.

　−Visiting Researcher at Paul-Drude-Institut fϋr Festkӧrperelektronik, Germany from Aug. 2007 to Aug. 2008.

　−Distinguished Researcher from 2015 to 2019.

Kazuhide Kumakura, Ph. D.
　Group Leader

Thin-Film Materials Research Group
　Multidisciplinary Materials Design and Science Laboratory,

Executive Research Scientist

Research Planning Section

　NTT Basic Research Laboratories,　
　Nippon Telegraph and Telephone Corporation

　3-1, Morinosato Wakamiya, Atsugi-shi,
　Kanagawa 243-0198, Japan

Thin-Film Materials Research Group / NTT Basic Research Laboratories

薄膜材料研究グループ / NTT 物性科学基礎研究所