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Last modified: May 7, 2012.


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 −Bachelor degree in 1993 from the division of Electrical Engineering, Hokkaido University.
 −Master degree in 1995 from the division of Electronic and Information Engineering, Hokkaido University.
 −Degree of Doctor of Philosophy (Engineering) in 1998 from Hokkaido University.
   (Doctor thesis : Fabrication of GaAs Quantum Dots by Selective Area Metalorganic Vapor Phase Epitaxy
              and Their Application to Quantum Effect Devices
 −Joined NTT in 1998.

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 Group III -nitride semiconductors
  ・ p-doping (bulk & superlattices)
  ・ ohmic contact to p-type materials
  ・ optoelectronic devices
  ・ epitaxial growth of low dislocation density GaN
  ・ device physics

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 − p-AlGaN/GaN superlattices & heterostructures
 − p-InGaN, p-InGaN/GaN superlattices & heterostructures
 − ohmic contact to p-GaN
 − nitride-based heterojunction bipolar transistors
 − minority carrier diffusion length in GaN
 − UV emitter

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 Poster
   Transistors Operating in Severe Environment - Doping Technique - (2000)
   Low resistance ohmic contact to p-GaN (2001)
   Low resistance nonalloyed ohmic contact to p-type nitride-based semiconductor (2002)
   Nitride-based Heterojunction Bipolar Transistors (HBTs) (2003)
  − High-Power Nitride-based Heterojunction Bipolar Transistors (2005)

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Kazuhide Kumakura, Ph. D.
 Thin-Film Materials Research Group 
 Materials Science Laboratory, 
 NTT Basic Research Laboratories, 
 
 3-1, Morinosato Wakamiya, Atsugi-shi,
 Kanagawa 243-0198, Japan


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