004  T. Makimoto,K. Kumakuraand N. Kobayashi
 Polarization Charge Densities at p-GaN/n-AlGaN Heterojunctions Evaluated by Capacitance - Voltage Characteristics
 Proceedings of International Workshop on Nitride Semiconductors (IWN2002),
 physica status solidi (c) No.1, pp. 334 - 337 (2003).
003  T. Nishida, H. Saito, K. Kumakura, T. Makimoto and N. Kobayashi
 SelectivelyEnhanced Mg Incorporation into AlGaN Barrier Layer of Strained Layer Superlattice
 Proceedings of International Workshop on Nitride Semiconductors (IWN 2000), IPAP Conf. Series 1 pp. 725-727.
002  K. Kumakura, T. Makimoto and N. Kobayashi
 Enhanced Hole Generation in Mg-Doped AlGaN/GaNSuperlattices due to Piezoelectric Field
 1999 Solid State Device and Materials Conference (SSDM '99) pp. 204-205, Tokyo Japan (September 1999).
 Jpn. J. Appl. Phys. vol. 39, pp.2428-2430 (2000)
001  K. Kumakura and N. Kobayashi
 Increased Electrical Activity of Mg-Acceptors in AlxGa1-xN/GaN Superlattices
 Jpn. J. Appl. Phys. vol.38, pp.L1012-L1014 (1999).

006  K. Kumakura, T. Makimoto and N. Kobayashi
 Mg-acceptor activation mechanism and transport characteristics in p-type InGaN
 grown by metalorganic vapor phase epitaxy
 J. Appl. Phys. 93 (2003) 3370.
005  T. Makimoto, K. Kumakura, T. Nishida and N. Kobayashi
 Valence-band Discontinuities between InGaN and GaN Evaluated
 by Capacitance-Voltage Characteristics of p-InGaN/n-GaN Diodes
"
 
 Journal of Electronic Materials, Vol. 31, No.4, pp.313 - 315 (2002).
004  K. Kumakura, T. Makimoto and N. Kobayashi
 High hole concentrations in Mg-doped InGaN grown by MOVPE
 ICMOVPE-X, Sapporo Japan (June 2000).
 J. Crystal Growth 221 (2000) 267-270.
003  K. Kumakura, T. Makimoto and N. Kobayashi
 High room-temperature hole concentration above 1019 cm-3 in Mg-doped InGaN/GaN superlattices
 MRS2000 Spring Meeting, vol. 622, T5-11, San Francisco, California (April 2000).
002  K. Kumakura, T. Makimoto and N. Kobayashi
 Activation Energy and Electrical Activity of Mg in Mg-Doped InxGa1-xN (x<0.2)
 Jpn. J. Appl. Phys. vol. 39, pp.L337-L339 (2000).
001  K. Kumakura, T. Makimoto and N. Kobayashi
 Efficien Hole Generation above 1019 cm-3 in Mg-Doped InGaN/GaN Superlattices
 Jpn. J. Appl. Phys. vol. 39, pp.L195-L196 (2000).

005  K. Kumakura, T. Makimoto and N. Kobayashi
 Ohmic Contact to p-GaN Using a Strained InGaN Contact Layer and Its Thermal Stability
 2002 International Conference on Solid State Devices and Materials (SSDM 2002), G-7-4, Nagoya (September 2002).
 Jpn. J. Appl. Phys. 42 (2003) 2254.
004  K. Kumakura, T. Makimoto and N. Kobayashi
 Low-resistance nonalloyed ohmic contact to p-type GaN using strained InGaN contact layer
 Appl. Phys. Lett. 79 (2001) 2588.
003  K. Kumakura, T. Makimoto and N. Kobayashi
 Low Resistance Non-alloy Ohmic Contact to p-type GaN using Mg-doped InGaN Contact Layer
 4th International Conference on Nitride Semiconductors (ICNS-4), A8.1, Denver Colorado (July 2001).
 physica status solidi. (a) 188, No.1, 363-366 (2001).
002  K. Kumakura, T. Makimoto and N. Kobayashi
 Low p-type Contact Resistance using Mg-doped InGaN and InGaN/GaN Superlattices
 Proceedings of International Workshop on Nitride Semiconductors (IWN2000), IPAP Conf. Series 1 pp. 797-800.
001  T. Makimoto, K. Kumakura and N. Kobayashi
 Reduced damages of electron cyclotron resonance etching by In doping into p-GaN
 ICMOVPE-X, Sapporo Japan (June 2000).
 J. Crystal Growth 221 (2000) 350-355.

012  K. Kumakura and T. Makimoto
 High-voltage operation with high current gain of pnp AlGaN/GaN heterojunction bipolar transistors with thin n-type GaN base
 Appl. Phys. Lett. 86, 023506 (2005).
011  T. Makimoto, K. Kumakura and N. Kobayashi
 High current gain (>2000) of GaN/InGaN double heterojunction bipolar transistors using base regrowth of p-InGaN
 Appl. Phys. Lett. 83, pp. 1035 - 1037 (2003).
010  K. Kumakura, T. Makimoto and N. Kobayashi
 Pnp AlGaN/GaN Heterojunction Bipolar Transistors Operating at 300°C
 Proceedings of International Workshop on Nitride Semiconductors (IWN2002),
 physica status solidi (a) 194 No.2, pp. 443 - 446 (2002).
009  T. Makimoto, K. Kumakuraand N. Kobayashi
 N-AlGaN/p-InGaN/n-GaN Heterojunction Bipolar Transistors for High Power Operation
 Proceedings of International Workshop on Nitride Semiconductors (IWN2002),
 physica status solidi (c) No.1, pp. 95 - 98 (2003).
008  K. Kumakura, T. Makimoto and N. Kobayashi
 Common-emitter current - voltage characteristics of a Pnp AlGaN/GaN heterojunction bipolar transistor
 with a low-resistance base layer
 Appl. Phys. Lett. 80, pp. 3841 - 3843 (2002)
007  K. Kumakura, T. Makimoto and N. Kobayashi
 Common-emitter current - voltage characteristics of a pnp GaN bipolarjunction transistor
 Appl. Phys. Lett. 80, pp.1225 - 1227 (2002).
006  K. Kumakura, T. Makimoto and N. Kobayashi
 High Common-Emitter Current Gains Obtained by pnp GaN Bipolar Junction Transistors
 MRS2001, Fall Meeting, I12.2, Boston, Massachusetts (November 2001).
005  T. Makimoto, K. Kumakura and N. Kobayashi
 Npn InGaN/GaN Double Heterojunction Bipolar Transistors with High Common-emitter Current Gains
 28th International Symposium on Compound Semiconductors 2001 (ISCS 2001), ThM-4, Tokyo Japan (October 2001).
 Inst. Phys. Conf. Ser. No. 170: Chapter 1, pp.33-38 (2002).
004  T. Makimoto, K. Kumakura and N. Kobayashi
 High current gains obtained by InGaN/GaN double heterojunction bipolar transistors with p-InGaN base
 Appl. Phys. Lett. Vol. 79, pp.380 - 381 (2001).
003  T. Makimoto, K. Kumakura and N. Kobayashi
 High Current Gains Obtained by InGaN/GaN Double Heterojunction Bipolar Transistors
 4th International Conference on Nitride Semiconductors (ICNS-4), A8.1, Denver Colorado (July 2001).
 phys. stat. sol. (a), Vol. 188, No. 1, pp.183 - 186 (2001).
002  T. Makimoto, K. Kumakura and N. Kobayashi
 p-InGaN/n-GaN heterojunction diodes and their application to heterojunction bipolar transistors
 MRS2000, Fall Meeting, G13.10, Boston, Massachusetts (November 2000).
 Mat. Res. Soc. Symp. Proc. Vol. 639
001  T. Makimoto, K. Kumakura and N. Kobayashi
 InGaN/GaN Double Heterojunction Bipolar Transistor Grown by Metalorganic Vapor Phase Epitaxy
 Proceedings of International Workshop on Nitride Semiconductors (IWN 2000), IPAP Conf. Series 1 pp. 969-972.


   Minority carrier diffusion length

001  K. Kumakura, T. Makimoto, N. Kobayashi, T. Hashizume, T. Fukui, and H. Hasegawa
 Minority carrier diffusion length in GaN: Dislocation density and doping concentration dependence
 Appl. Phys. Lett. 86, 052105 (2005).


001  T. Nishida, H. Saito, K. Kumakura, T. Makimoto and N. Kobayashi
 Short Period Alloy Superlattice for Transparent Conductive Layer of UV-Emitter
 Proceedings of International Workshop on Nitride Semiconductors (IWN 2000), IPAP Conf. Series 1 pp. 872-874.

   Total: 27,
    contents : p-AlGaN: 4, p-InGaN: 6, ohmic: 5, HBT: 12, UV: 1.