004 |
T. Makimoto,K. Kumakuraand N. Kobayashi |
|
Polarization Charge Densities at p-GaN/n-AlGaN Heterojunctions Evaluated
by Capacitance - Voltage Characteristics |
Proceedings of International Workshop on Nitride Semiconductors (IWN2002),
physica status solidi (c) No.1, pp. 334 - 337 (2003). |
003 |
T. Nishida, H. Saito, K. Kumakura, T. Makimoto and N. Kobayashi |
|
SelectivelyEnhanced Mg Incorporation into AlGaN Barrier Layer of Strained Layer Superlattice |
Proceedings of International Workshop on Nitride Semiconductors (IWN
2000), IPAP Conf. Series 1 pp. 725-727. |
002 |
K. Kumakura, T. Makimoto and N. Kobayashi |
|
Enhanced Hole Generation in Mg-Doped AlGaN/GaNSuperlattices due to Piezoelectric Field |
1999 Solid State Device and Materials Conference (SSDM '99) pp. 204-205,
Tokyo Japan (September 1999).
Jpn. J. Appl. Phys. vol. 39, pp.2428-2430 (2000) |
001 |
K. Kumakura and N. Kobayashi |
|
Increased Electrical Activity of Mg-Acceptors in AlxGa1-xN/GaN Superlattices |
Jpn. J. Appl. Phys. vol.38, pp.L1012-L1014 (1999). |
006 |
K. Kumakura, T. Makimoto and N. Kobayashi |
|
Mg-acceptor activation mechanism and transport characteristics in p-type InGaN
grown by metalorganic vapor phase epitaxy |
J. Appl. Phys. 93 (2003) 3370. |
005 |
T. Makimoto, K. Kumakura, T. Nishida and N. Kobayashi |
|
Valence-band Discontinuities between InGaN and GaN Evaluated
by Capacitance-Voltage Characteristics of p-InGaN/n-GaN Diodes" |
Journal of Electronic Materials, Vol. 31, No.4, pp.313 - 315 (2002). |
004 |
K. Kumakura, T. Makimoto and N. Kobayashi |
|
High hole concentrations in Mg-doped InGaN grown by MOVPE |
ICMOVPE-X, Sapporo Japan (June 2000).
J. Crystal Growth 221 (2000) 267-270. |
003 |
K. Kumakura, T. Makimoto and N. Kobayashi |
|
High room-temperature hole concentration above 1019 cm-3 in Mg-doped InGaN/GaN superlattices |
MRS2000 Spring Meeting, vol. 622, T5-11, San Francisco, California (April
2000). |
002 |
K. Kumakura, T. Makimoto and N. Kobayashi |
|
Activation Energy and Electrical Activity of Mg in Mg-Doped InxGa1-xN (x<0.2) |
Jpn. J. Appl. Phys. vol. 39, pp.L337-L339 (2000). |
001 |
K. Kumakura, T. Makimoto and N. Kobayashi |
|
Efficien Hole Generation above 1019 cm-3 in Mg-Doped InGaN/GaN Superlattices |
Jpn. J. Appl. Phys. vol. 39, pp.L195-L196 (2000). |
005 |
K. Kumakura, T. Makimoto and N. Kobayashi |
|
Ohmic Contact to p-GaN Using a Strained InGaN Contact Layer and Its Thermal
Stability |
2002 International Conference on Solid State Devices and Materials (SSDM 2002), G-7-4, Nagoya (September 2002).
Jpn. J. Appl. Phys. 42 (2003) 2254. |
004 |
K. Kumakura, T. Makimoto and N. Kobayashi |
|
Low-resistance nonalloyed ohmic contact to
p-type GaN using strained InGaN contact layer |
Appl. Phys. Lett. 79 (2001) 2588. |
003 |
K. Kumakura, T. Makimoto and N. Kobayashi |
|
Low Resistance Non-alloy Ohmic Contact to p-type GaN using Mg-doped InGaN
Contact Layer |
4th International Conference on Nitride Semiconductors (ICNS-4), A8.1,
Denver Colorado (July 2001).
physica status solidi. (a) 188, No.1, 363-366 (2001). |
002 |
K. Kumakura, T. Makimoto and N. Kobayashi |
|
Low p-type Contact Resistance using Mg-doped InGaN and InGaN/GaN Superlattices |
Proceedings of International Workshop on Nitride Semiconductors (IWN2000),
IPAP Conf. Series 1 pp. 797-800. |
001 |
T. Makimoto, K. Kumakura and N. Kobayashi |
|
Reduced damages of electron cyclotron resonance etching by In doping
into p-GaN |
ICMOVPE-X, Sapporo Japan (June 2000).
J. Crystal Growth 221 (2000) 350-355. |
012 |
K. Kumakura and T. Makimoto |
|
High-voltage operation with high current
gain of pnp AlGaN/GaN heterojunction bipolar
transistors with thin n-type GaN base |
Appl. Phys. Lett. 86, 023506 (2005). |
011 |
T. Makimoto, K. Kumakura and N. Kobayashi |
|
High current gain (>2000) of GaN/InGaN double heterojunction bipolar
transistors using base regrowth of p-InGaN |
Appl. Phys. Lett. 83, pp. 1035 - 1037 (2003). |
010 |
K. Kumakura, T. Makimoto and N. Kobayashi |
|
Pnp AlGaN/GaN Heterojunction Bipolar Transistors Operating at 300°C |
Proceedings of International Workshop on
Nitride Semiconductors (IWN2002),
physica status solidi (a) 194 No.2, pp. 443 - 446 (2002). |
009 |
T. Makimoto, K. Kumakuraand N. Kobayashi |
|
N-AlGaN/p-InGaN/n-GaN Heterojunction Bipolar Transistors for High Power
Operation |
Proceedings of International Workshop on Nitride Semiconductors (IWN2002),
physica status solidi (c) No.1, pp. 95 - 98 (2003). |
008 |
K. Kumakura, T. Makimoto and N. Kobayashi |
|
Common-emitter current - voltage characteristics of a Pnp AlGaN/GaN heterojunction bipolar transistor
with a low-resistance base layer |
Appl. Phys. Lett. 80, pp. 3841 - 3843 (2002) |
007 |
K. Kumakura, T. Makimoto and N. Kobayashi |
|
Common-emitter current - voltage characteristics of a pnp GaN bipolarjunction transistor |
Appl. Phys. Lett. 80, pp.1225 - 1227 (2002). |
006 |
K. Kumakura, T. Makimoto and N. Kobayashi |
|
High Common-Emitter Current Gains Obtained by pnp GaN Bipolar Junction Transistors |
MRS2001, Fall Meeting, I12.2, Boston, Massachusetts (November 2001). |
005 |
T. Makimoto, K. Kumakura and N. Kobayashi |
|
Npn InGaN/GaN Double Heterojunction Bipolar
Transistors with High Common-emitter Current
Gains |
28th International Symposium on Compound Semiconductors 2001 (ISCS 2001),
ThM-4, Tokyo Japan (October 2001).
Inst. Phys. Conf. Ser. No. 170: Chapter 1, pp.33-38 (2002). |
004 |
T. Makimoto, K. Kumakura and N. Kobayashi |
|
High current gains obtained by InGaN/GaN double heterojunction bipolar transistors with p-InGaN base |
Appl. Phys. Lett. Vol. 79, pp.380 - 381 (2001). |
003 |
T. Makimoto, K. Kumakura and N. Kobayashi |
|
High Current Gains Obtained by InGaN/GaN Double Heterojunction Bipolar
Transistors |
4th International Conference on Nitride Semiconductors (ICNS-4), A8.1, Denver Colorado (July 2001).
phys. stat. sol. (a), Vol. 188, No. 1, pp.183 - 186 (2001). |
002 |
T. Makimoto, K. Kumakura and N. Kobayashi |
|
p-InGaN/n-GaN heterojunction diodes and their application to heterojunction bipolar transistors |
MRS2000, Fall Meeting, G13.10, Boston, Massachusetts (November 2000).
Mat. Res. Soc. Symp. Proc. Vol. 639 |
001 |
T. Makimoto, K. Kumakura and N. Kobayashi |
|
InGaN/GaN Double Heterojunction Bipolar Transistor Grown by Metalorganic
Vapor Phase Epitaxy |
Proceedings of International Workshop on Nitride Semiconductors (IWN 2000),
IPAP Conf. Series 1 pp. 969-972. |
Minority carrier diffusion length
001 |
K. Kumakura, T. Makimoto, N. Kobayashi, T. Hashizume,
T. Fukui, and H. Hasegawa |
|
Minority carrier diffusion length in GaN:
Dislocation density and doping concentration
dependence |
Appl. Phys. Lett. 86, 052105 (2005). |
001 |
T. Nishida, H. Saito, K. Kumakura, T. Makimoto and N. Kobayashi |
|
Short Period Alloy Superlattice for Transparent Conductive Layer of UV-Emitter |
Proceedings of International Workshop on Nitride Semiconductors (IWN
2000), IPAP Conf. Series 1 pp. 872-874. |
Total: 27,
contents : p-AlGaN: 4, p-InGaN: 6,
ohmic: 5, HBT: 12, UV: 1.