Biography

  In 1985, he joined Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone (NTT) Corporation, Tokyo, Japan. He initially worked on metalorganic vapor phase epitaxy (MOVPE) of GaAs and AlGaAs, flow-rate modulation epitaxy (FME) and surface photo-absorption (SPA). Then, he was engaged in research on characterization of Si atomic-layer-doped GaAs structures and carbon doped GaAs layers as well as AlGaAs/GaAs heterojunction bipolar transistors (HBTs). During 1990 - 1991, he joined the NTT LSI laboratories to fabricate InP/InGaAs heterojunction bipolar transistors on Si substrates.

 In 1993, he went to University of California, Santa Barbara (UCSB) as a visiting researcher. He spent a year on working with Prof. Herbert Kroemer, a 2000 Novel prize laureate in physics. He investigated two-dimensional electron transport characteristics in the InAs/GaSb system grown by molecular beam epitaxy (MBE).
 After returning to NTT Basic Research Laboratories, he worked on nitridation of GaAs surfaces and nanoscale selective-area GaAs growth using Scanning Tunneling Microscopy (STM). Furthermore, using MOVPE and MBE, he grew nitrogen doped GaAs layers and investigated their optical characteristics.
 During 1997 - 1999, he embarked on a new research planning as a senior manager in NTT Basic Research Laboratories in the era of "Basic Research Bigbang". His tasks included research planning, budget management, security management, and public relation.
 From 1999 to 2007, he was engaged in research on MOVPE growth of group-III nitride systems as a distinguished researcher of NTT Basic Research Laboratories (2000 - 2005) and a group leader (2003 - 2007).
 From 2007 to 2010, he was in charge of human resources and research planning of NTT Basic Research Laboratories as an executive manager.
 Now, he is a director of NTT Basic Research Laboratories as well as an executive manager of Nano Bio research.  

 He is a member of Organizing Committee of Intenational Conference on Solid State Devices and Materials (SSDM). He is also a member of technology evaluation committee for Government-funded Research and Development projects promoted by the New Energy and Industrial Technology Development Organization (NEDO) and Diamond Research Center in the National Institute of Advanced Industrial Science and Technology (AIST).

 For education, in 2005 and 2006, he gave lectures for the graduated students at National Chiao Tung University in Taiwan. His lectures covered epitaxial growth of III-V compound semiconductors, electronic devices (HBT, HEMT) and optical devices (LED and LD). The total number of this course was 6 times in each year. He also gave lectures for the graduated students at Tokyo Metropolitan University. Its title was "Semiconductor electronic devices --- High-speed electronic devices ---". The total number of this course was 11 times.

 He received the B. E., M. E., and Dr. Eng. degrees in electrical engineering from the University of Tokyo, Japan, in 1983, 1985, and 1993, respectively. In 2009, he was elected to the grade of Senior Member of the Institute of Electronics, Information and Communication Engineers (IEICE). He is also a member of the Japan Society of Applied Physics.