These OHPs are for an invited talk at ICFSI-8 (The 8th International Conference on the Formation of Semiconductor Interfaces, Hokkaido University in Sapporo, 2001.6.10-15).

Single-electron Devices Formed by Pattern-dependent Oxidation
- Microscopic structural evaluation -

M. Nagase, S. Horiguchi, A. Fujiwara, Y. Ono,
K. Yamazaki, H. Namatsu, and Y. Takahashi

NTT Basic Research Laboratories

Presentation Start !!

****Contents****

OHP 1: [Title]
OHP 2: [Outline]

Introduction
OHP 3: Trend in Miniaturization of Semiconductor Devices in ITRS
OHP 4: SET(Single-Electron Transistor)
OHP 5: Si SET on SOI Substrate
OHP 6: Initial Structure of SED

How to analyze an oxidized Si nanostructure
OHP 7: How to Analyze an Oxidized Si Nanostructure
Techniques for observing Si embedded in SiO2
1. SEM: surface charge imaging technique
OHP 8: SEM/XTEM Images of Oxidized Nanostructure
OHP 9: Effect of Acceleration Voltage
OHP 10: Mechanism of Surface-Charge Imaging
OHP 11: Surface-Charge Image of Embedded Si Nanostructure
2. AFM: embedded Si height evaluation
OHP 12: AFM Measurement of Height of Embedded Si
How to use an oxidized Si nanostructure
OHP 13: 1. PADOX (pattern-dependent oxidation)
Suppression of oxidation + Oxidation from below
OHP 14: PADOX
OHP 15: Si Nanostructures Fabricated by PADOX
OHP 16: Height of Oxidized Si Wire
OHP 17: 2. Structure of single-electron device

Potential profile of single-electron device fabricated by PADOX
OHP 18: Structure and Electrical Characteristics of SET
OHP 19: 3D Model of Si SET
OHP 20: Effect of strain for bandgap of Si
OHP 21: Potential Profile of Si Wire
OHP 22: Si Nanostructures Fabricated by PADOX

V-PADOX
OHP 23: V-PADOX
OHP 24: SET Inverter

OHP 25: Summary

If you have any question or comment, please mail to nagase.

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upload :2001/8/16

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